KR102232151B1 - Method for manufacturing photomask, lithography apparatus, method of manufacturing display device, inspection method of photomask substrate and inspection apparatus of photomask substrate - Google Patents

Abstract

The improvement of the coordinate accuracy in the manufacture of a photomask can be performed more efficiently. A method of manufacturing a photomask having a transfer pattern based on design drawing data W1 on a first main surface of a transparent substrate, wherein a photomask substrate in which a thin film and a resist film are stacked on the first main surface is placed on a stage of a drawing apparatus. And, a drawing process for performing drawing on the photomask substrate, and a process for patterning a thin film using a resist pattern formed by developing a resist film. In the drawing process, the drawing apparatus affects the shape of the photomask substrate. Drawing device specific data M1 indicating the amount of deformation and back surface data S2 indicating the shape of the second main surface of the photomask substrate are prepared, and the coordinate shift composition amount D1 caused by the drawing device specific data M1 and the back surface data S2 is designated as the design drawing data W1. Is reflected, and a transfer pattern is drawn on the photomask substrate.

Description

Photomask manufacturing method, drawing device, display device manufacturing method, photomask substrate inspection method, and photomask substrate inspection device APPARATUS OF PHOTOMASK SUBSTRATE}

The present invention relates to a photomask suitable for manufacturing a semiconductor device or a display device, and in particular, a display device such as a flat panel display (FPD) typified by a liquid crystal display device or an organic EL (electroluminescent) display device can be manufactured. It relates to a photomask manufacturing method, a drawing device, a display device manufacturing method, a photomask substrate inspection method, and a photomask substrate inspection apparatus that are advantageously used at the time.

In the field of photomasks, it is desired to increase the accuracy of formation of a transfer pattern formed on a photomask substrate based on a designed design, and to increase the inspection accuracy of the formed transfer pattern.

Patent Document 1 describes a method of manufacturing a photomask capable of increasing the coordinate precision of the pattern when transferring a pattern onto an object to be transferred using a photomask having a transfer pattern formed thereon. In addition, in Patent Document 1, especially in the photomask manufacturing process, even if the design data of the transfer pattern is used as it is for drawing data, the shape of the film surface (pattern formation surface) at the time of drawing is different from that at the time of exposure. Therefore, in order to solve the problem that the pattern as designed is not formed on the object to be transferred, a method of obtaining corrected drawing data is described.

Japanese Patent Laid-Open No. 2010-134433

By the way, in manufacturing a display device, a photomask provided with a transfer pattern based on the design of a device to be obtained is widely used. As a device, a liquid crystal display device or an organic EL display device typified by a smartphone or a tablet terminal is required to have a bright, power saving, fast operation speed, and a clean image with high resolution. For this reason, for the photomask used for the above-described application, a new technical problem has been made present by the present inventors.

In order to clearly express a fine image, it is necessary to increase the pixel density, and now, there is a demand for further increasing the pixel density. For this reason, the design of the photomask transfer pattern is in the direction of miniaturization and high density. By the way, most electronic devices including display devices are three-dimensionally formed by lamination of a plurality of layers in which fine patterns are formed. Therefore, it is essential to improve the coordinate accuracy in these plurality of layers and to match the coordinates with each other. In other words, if the pattern coordinate accuracy of each layer does not satisfy all of the predetermined levels, a problem such as not performing an appropriate operation in the completed device occurs. Therefore, the allowable range of the coordinate shift required for each layer is in the direction of becoming smaller and smaller. That is, there is a tendency that the demand for coordinate precision required for the transfer pattern of the photomask used to manufacture each layer is increasing.

In the manufacture of a photomask, a photomask substrate in which a thin film and a resist film are formed on a first main surface of a transparent substrate (hereinafter, also referred to as "film surface") is used. In addition, in the photomask manufacturing process, a thin film on a transparent substrate is patterned to form a transfer pattern having a desired shape.

In this specification, the "photomask substrate" shall include a transparent substrate listed below, a photomask blank, a photomask blank provided with a resist, a photomask intermediate, or a photomask.

(a) A transparent substrate for forming a photomask.

(b) A photomask blank in which a thin film (a film that functions as a light-shielding film or a semi-transmissive film as an optical film for forming a transfer pattern by patterning) is formed on the transparent substrate.

(c) A photomask blank provided with a resist in which a resist film is formed on the thin film.

(d) A photomask intermediate for already having a thin film pattern and performing further patterning, or for laminating a further thin film pattern.

(e) The finished photomask.

In addition, in this specification, a photomask substrate may be simply referred to as a "substrate".

In the photomask manufacturing process, for example, when drawing a pattern on a photomask substrate, which is a photomask blank provided with a resist, using a drawing apparatus, a photomask substrate is placed on a horizontal stage. At that time, the film surface of the photomask substrate is made upward. Then, the resist film constituting the film surface is irradiated with an energy beam such as a laser beam, and the irradiation position is changed to draw a desired pattern.

However, if design data of a desired transfer pattern is used as it is as drawing data, a problem may arise. The reason is that the surface of the stage 50 of the drawing apparatus supporting the photomask substrate 51 cannot be said to be an ideal plane, as shown in FIGS. 11A and 11B, and the photomask substrate This is because (51) cannot be said to have only an ideal plane. Both the surface of the stage 50 and the two main surfaces of the photomask substrate 51 are precisely processed, but from the viewpoint of the flatness of the surface, some irregularities may occur. In addition, irregularities on the surface of the stage 50 of the drawing apparatus, warpage of the substrate due to pinching of a foreign object between the surface of the stage 50 and the second main surface of the photomask substrate 51 in contact therewith (hereinafter, also referred to as “the back side”) , Irregularities on the back surface of the photomask substrate 51, fluctuations in the thickness of the photomask substrate 51, etc. may occur. In this case, as shown in (b) of FIG. 11, the shape of the top surface (that is, the film surface) of the photomask substrate 51 placed on the stage 50 is formed with irregularities in which these deformation factors are accumulated. do. Then, on the photomask substrate 51 in this state, the drawing head 52 draws a pattern according to the design drawing data W1. In addition, in Fig. 11, deformation of the photomask substrate or stage is exaggerated. The same applies to other similar drawings.

On the other hand, as shown in Fig. 11(c), when the photomask substrate (photomask) 51 on which the transfer pattern is formed is mounted on the exposure apparatus, and the transfer pattern is transferred onto the transfer object, the photo While the film surface of the mask substrate 51 (in the drawing, the portion painted in black) is turned downward, only the outer edge of the photomask substrate 51 is supported by the jig 53, The mask substrate 51 is fixed. Then, an object to be transferred (not shown) is disposed under the photomask substrate 51, and exposure light is irradiated from the upper side of the photomask substrate 51 (that is, from the rear side of the photomask substrate 51).

In this way, the direction of the film surface of the photomask substrate 51 is inverted up and down during drawing and exposure of the photomask substrate 51. In addition, most of the causes of deformation of the substrate film surface at the time of drawing are lost at the time of exposure. Therefore, the shape of the film surface of the photomask substrate is different between drawing and exposure. Therefore, a difference occurs in the pattern shape between the pattern corresponding to the pattern data used for drawing and the pattern transferred onto the object to be transferred. Specifically, a shift occurs in the coordinates of the designed pattern according to the change in the shape of the film surface, and this shift becomes a shift in the coordinates of the transfer image (see Fig. 11(c)).

Therefore, it is conceivable to calculate in advance the amount of the coordinate shift caused by the change in the shape of the film surface of the photomask substrate and reflect it in the drawing data. That is, a method of correcting drawing data or drawing conditions is conceived in order to cancel the assumed coordinate shift.

The inventors of the present invention calculate the shape of the film surface in the drawing process of the photomask substrate and the shape change of the shape of the film surface when exposure is performed using a photomask substrate having a transfer pattern, and the calculated shape change Based on this, a method of correcting design drawing data used for drawing is proposed (Patent Document 1). That is, the height distribution data obtained by measuring the height distribution of the upper surface of the photomask substrate in a state where the photomask substrate is mounted on the stage of the drawing apparatus with the film surface as the upper side, and the film surface shape data of the photomask substrate obtained in advance are This is a method of correcting design drawing data using difference data. This method is shown in FIG. 12.

In the above method, among the factors of deformation from the abnormal plane on the film surface of the photomask substrate, which exist in the step of drawing the pattern, the one that remains even during exposure and the one that disappears during exposure is distinguished and disappeared. The corrected drawing data is obtained by reflecting the amount to the design drawing data.

Specifically, as shown in Fig. 12A, the shape of the film surface of the photomask substrate 61 is measured to obtain film surface shape data. In addition, as shown in Fig. 12B, the photomask substrate 61 is placed on the stage 60 of the drawing apparatus with the film surface as the upper side, and in that state, the upper surface of the photomask substrate 61 The height distribution of is measured to obtain the height distribution data. Then, as shown in Fig. 12C, the design drawing data is corrected based on the difference data between these two data, and drawing is performed using the corrected drawing data obtained thereby. By employing this method, it is possible to increase the coordinate accuracy of the transfer pattern formed on the photomask substrate.

However, in the above method, it is necessary to mount the photomask substrate on the stage of the drawing apparatus with the film surface as the upper side, and measure the height distribution of the upper surface of the photomask substrate in that state. For this reason, there is a disadvantage of increasing the time that the drawing device is occupied by the photomask substrate (hereinafter, also referred to as "occupied time of the drawing device").

A photomask for manufacturing a display device generally has a large area (for example, a rectangle having a main surface of 300 mm or more), and requires a long time to draw. In particular, in a photomask (mainly, one side of the main surface is 800 mm or more) that is widely used in the production of portable terminals, etc., the drawing time is increasing. On the other hand, in the method described in Patent Document 1, when measuring the height distribution of the upper surface of the photomask substrate, a plurality of measurement points are set at predetermined intervals within the surface of the substrate, and the height is measured for each measurement point. By accumulating data, height distribution data is obtained. For this reason, the time required for measurement is also increased with the measurement of the above-described large-area substrate, so that the occupied time of the drawing apparatus is increased. The occupancy time of the drawing device has a large influence on the production efficiency and cost of the photomask. For this reason, the inventors noted that there is a potential technical problem to improve this.

Accordingly, the present invention solves the above problems and provides a photomask manufacturing method, a drawing device, a display device manufacturing method, a photomask substrate inspection method, and a photomask substrate capable of increasing the coordinate accuracy of a pattern formed on a transfer object. It is an object of the present invention to provide a device for testing.

(First form)

The first aspect of the present invention,

As a manufacturing method of a photomask having a transfer pattern based on design drawing data W1 on a first main surface of a transparent substrate,

A step of placing a photomask substrate in which a thin film and a resist film are stacked on the first main surface on a stage of a drawing apparatus;

A drawing step of performing drawing on the photomask substrate, and

A step of patterning the thin film using a resist pattern formed by developing the resist film,

In the above drawing process,

Drawing device specific data M1 indicating an amount of deformation that the drawing device exerts on the shape of the photomask substrate;

Prepare back surface data S2 representing the shape of the second main surface of the photomask substrate,

A method for manufacturing a photomask, comprising reflecting the coordinate shift synthesis amount D1 due to the drawing device specific data M1 and the back surface data S2 to the design drawing data W1, and drawing a transfer pattern on the photomask substrate. to be.

(Second form)

The second aspect of the present invention,

When the plane parallel to the stage surface of the drawing device is referred to as the XY plane, and the axis perpendicular to the XY plane is referred to as the Z axis,

The coordinate shift synthesis amount D1 is obtained by converting the height variation data H1 in the Z-axis direction by the sum of the drawing device-specific data M1 and the back surface data S2 into coordinate shift amounts in the X-axis direction and the Y-axis direction. A method for producing a photomask according to the first aspect, characterized in that

(3rd form)

The third aspect of the present invention,

In the drawing process, in order to reflect the coordinate shift synthesis amount D1 in the design drawing data W1, based on the coordinate shift synthesis amount D1, the design drawing data W1 is corrected to compensate for the coordinate shift, and corrected drawing It is a method for manufacturing a photomask according to the first or second aspect, characterized in that data W2 is obtained and drawing is performed using the corrected drawing data W2.

(4th form)

The fourth aspect of the present invention,

In the drawing process, in order to reflect the coordinate shift synthesis amount D1 in the design drawing data W1, based on the coordinate shift synthesis amount D1, the coordinate system included in the drawing device is corrected to compensate for the coordinate shift, and a correction coordinate system Is obtained, and the correction coordinate system is used together with the design drawing data W1 to draw.

(Fifth form)

The fifth aspect of the present invention,

As a manufacturing method of a photomask having a transfer pattern based on design drawing data W1 on a first main surface of a transparent substrate,

A step of placing a photomask substrate in which a thin film and a resist film are stacked on the first main surface on a stage of a drawing apparatus;

A drawing step of performing drawing on the photomask substrate, and

A step of patterning the thin film using a resist pattern formed by developing the resist film,

The flatness coefficient k1 of the back surface of the photomask substrate is,

-100nm≤k1≤100nm

When satisfying,

In the above drawing process,

Prepare drawing device specific data M1 indicating the amount of deformation that the drawing device exerts on the shape of the photomask substrate,

A method for manufacturing a photomask, comprising reflecting the coordinate shift amount D2 caused by the drawing device specific data M1 to the design drawing data W1, and drawing a transfer pattern on the photomask substrate.

(The sixth form)

The sixth aspect of the present invention,

As a manufacturing method of a photomask having a transfer pattern based on design drawing data W1 on a first main surface of a transparent substrate,

A step of placing a photomask substrate in which a thin film and a resist film are stacked on the first main surface on a stage of a drawing apparatus;

A drawing step of performing drawing on the photomask substrate, and

A step of patterning the thin film using a resist pattern formed by developing the resist film,

The flatness coefficient k2 of the stage of the drawing device is,

-100nm≤k2≤100nm

When satisfying,

In the above drawing process,

Prepare back surface data S2 representing the shape of the second main surface of the photomask substrate,

It is a method for manufacturing a photomask, wherein the amount of coordinate shift D3 caused by the back surface data S2 is reflected in the design drawing data W1, and a transfer pattern is drawn on the photomask substrate.

(7th form)

The seventh aspect of the present invention,

As a drawing device for drawing a transfer pattern based on design drawing data W1 on a photomask substrate in which a thin film and a resist film are stacked on a first main surface of a transparent substrate,

A stage on which the photomask substrate is placed,

A drawing means for drawing by irradiating an energy beam for drawing on the photomask substrate in a state placed on the stage;

A drawing control system for controlling drawing by calculating pattern data used for drawing is provided,

The drawing control system,

Storage means for holding drawing device-specific data M1 indicating an amount of deformation that the drawing device exerts on the shape of the photomask substrate;

Input means for inputting the design drawing data W1 and back surface data S2 indicating a back surface shape of the photomask substrate;

And a data control means for controlling the drawing by the drawing means by performing an operation to reflect the coordinate shift synthesis amount D1 caused by the drawing device specific data M1 and the back surface data S2 to the design drawing data W1. It is a drawing device to be used.

(8th form)

The eighth aspect of the present invention,

The storage means is the drawing device according to the seventh aspect, characterized in that the storage unit holds the drawing device-specific data M1 as a coordinate deviation correction amount obtained by converting the coordinate deviation amount in the X-axis direction and the Y-axis direction.

(9th form)

The ninth aspect of the present invention,

The storage means holds the drawing device-specific data M1 as a correction coordinate system in which the coordinate system is corrected by converting the coordinate shift amount in the X-axis direction and the Y-axis direction. to be.

(The tenth form)

The tenth aspect of the present invention,

The drawing device-specific data M1 is the drawing apparatus according to any one of the seventh to ninth aspects, characterized in that it contains flatness data of the stage indicating the surface shape of the stage.

(The eleventh form)

The eleventh aspect of the present invention,

As a drawing device for drawing a transfer pattern based on design drawing data W1 on a photomask substrate in which a thin film and a resist film are stacked on a first main surface of a transparent substrate,

A stage on which the photomask substrate is placed,

A drawing means for drawing by irradiating an energy beam for drawing on the photomask substrate in a state placed on the stage;

A drawing control system for controlling drawing by calculating pattern data used for drawing is provided,

The drawing control system,

Storage means for holding drawing device-specific data M1 indicating an amount of deformation that the drawing device exerts on the shape of the photomask substrate;

Input means for inputting the design drawing data W1;

A drawing apparatus comprising data control means for controlling drawing by the drawing means by performing an operation to reflect the coordinate shift amount D2 caused by the drawing apparatus specific data M1 to the design drawing data W1.

(Form 12)

The twelfth aspect of the present invention,

As a drawing device for drawing a transfer pattern based on design drawing data W1 on a photomask substrate in which a thin film and a resist film are stacked on a first main surface of a transparent substrate,

A stage on which the photomask substrate is placed,

A drawing means for drawing by irradiating an energy beam for drawing on the photomask substrate in a state placed on the stage;

A drawing control system for controlling drawing by calculating pattern data used for drawing is provided,

The flatness coefficient k2 of the stage of the drawing device is,

-100nm≤k2≤100nm

To satisfy,

The drawing control system,

Input means for inputting the design drawing data W1 and back surface data S2 indicating the shape of the back surface of the photomask substrate;

A drawing apparatus comprising data control means for controlling drawing by the drawing means by performing an operation to reflect the coordinate shift amount D3 caused by the back surface data S2 to the design drawing data W1.

(The thirteenth form)

The thirteenth aspect of the present invention,

A step of preparing a photomask manufactured by the method for manufacturing a photomask according to any one of the first to sixth aspects, and

This is a method of manufacturing a display device including a step of exposing the photomask using an exposure device.

(Form 14)

The fourteenth aspect of the present invention,

A method for inspecting a photomask substrate having a transfer pattern formed on a first main surface of a transparent substrate based on design drawing data W1, comprising:

A step of placing the photomask substrate on a stage of an inspection apparatus,

An inspection data acquisition step of measuring the shape of the transfer pattern to obtain pattern inspection data X1; and

A determination step of determining the good or bad of the transfer pattern,

In the above determination process,

Inspection device specific data M2 indicating the amount of deformation that the inspection device exerts on the shape of the photomask substrate;

Prepare back surface data S2 representing the shape of the second main surface of the photomask substrate,

The inspection of a photomask substrate, characterized in that the determination is performed using the coordinate shift synthesis amount D4 caused by the inspection device specific data M2 and the back surface data S2, the pattern inspection data X1, and the design drawing data W1. That's the way.

(The fifteenth form)

The fifteenth aspect of the present invention,

In the determination process, the determination is performed by reflecting the coordinate shift synthesis amount D4 to the pattern inspection data X1 or the design drawing data W1, and the method for inspecting the photomask substrate according to the fourteenth aspect. to be.

(Form 16)

The sixteenth aspect of the present invention,

When the plane parallel to the stage surface of the inspection device is referred to as the XY plane, and the axis perpendicular to the XY plane is referred to as the Z axis,

The coordinate shift synthesis amount D4 is obtained by converting the height variation data H2 in the Z-axis direction by the sum of the inspection device-specific data M2 and the back surface data S2 into coordinate shift amounts in the X-axis direction and the Y-axis direction. It is characterized in that it is the inspection method of the photomask substrate of said 14th aspect.

(The 17th form)

The seventeenth aspect of the present invention,

A method for inspecting a photomask substrate having a transfer pattern formed on a first main surface of a transparent substrate based on design drawing data W1, comprising:

A step of placing the photomask substrate on a stage of an inspection apparatus,

An inspection data acquisition step of measuring the shape of the transfer pattern to obtain pattern inspection data X1; and

A determination step of determining the good or bad of the transfer pattern,

The flatness coefficient k1 of the back surface of the photomask substrate is,

-100nm≤k1≤100nm

When satisfying,

In the above determination process,

Prepare inspection device specific data M2 indicating the amount of deformation the inspection device exerts on the shape of the photomask substrate,

A method for inspecting a photomask substrate, wherein the determination is performed using the coordinate shift amount D5 due to the inspection device specific data M2, the pattern inspection data X1, and the design drawing data W1.

(Form 18)

The eighteenth aspect of the present invention,

A method for inspecting a photomask substrate having a transfer pattern formed on a first main surface of a transparent substrate based on design drawing data W1, comprising:

A step of placing the photomask substrate on a stage of an inspection apparatus,

An inspection data acquisition step of measuring the shape of the transfer pattern to obtain pattern inspection data X1; and

A determination step of determining the good or bad of the transfer pattern,

The flatness coefficient k3 of the stage of the inspection device is,

-100nm≤k3≤100nm

When satisfying,

In the above determination process,

Prepare back surface data S2 representing the shape of the second main surface of the photomask substrate,

A method for inspecting a photomask substrate, characterized in that the determination is performed using the coordinate shift amount D6 resulting from the back surface data S2, the pattern inspection data X1, and the design drawing data W1.

(Form 19)

The nineteenth aspect of the present invention,

An inspection apparatus for a photomask substrate having a transfer pattern formed on a first main surface of a transparent substrate based on design drawing data W1,

A stage on which the photomask substrate is placed,

Measuring means for measuring the shape of the transfer pattern of the photomask substrate in a state placed on the stage to obtain pattern inspection data X1;

And a determination means for determining the good or bad of the transfer pattern,

The determination means,

Storage means for holding inspection device-specific data M2 indicating an amount of deformation that the inspection device exerts on the shape of the photomask substrate;

And input means for inputting the design drawing data W1 and back surface data S2 indicating a shape of the back surface of the photomask substrate,

The inspection of a photomask substrate, characterized in that the determination is performed using the coordinate shift synthesis amount D4 caused by the inspection device specific data M2 and the back surface data S2, the pattern inspection data X1, and the design drawing data W1. It is a device.

(Form 20)

The twentieth aspect of the present invention,

The determination means reflects the coordinate shift synthesis amount D4 to the pattern inspection data X1 or the design drawing data W1 to make the determination, and the photomask substrate inspection apparatus according to the nineteenth aspect. to be.

(Form 21)

The twenty-first aspect of the present invention,

Inspecting the photomask substrate according to the 19th aspect, wherein the storage means holds the inspection device-specific data M2 as a coordinate shift correction amount converted into a coordinate shift amount in the X-axis direction and the Y-axis direction. It is a device.

(Form 22)

The 22nd aspect of the present invention,

The photomask according to the nineteenth aspect, wherein the storage means holds the test device-specific data M2 as a correction coordinate system in which the coordinate system is corrected by converting the amount of coordinate shift in the X-axis direction and the Y-axis direction. It is a board inspection device.

(Form 23)

The twenty-third aspect of the present invention,

The inspection apparatus specific data M2 is the inspection apparatus for a photomask substrate according to any one of the 19th to 22nd aspect, characterized in that it contains flatness data of the stage indicating the surface shape of the stage.

(Form 24)

The twenty-fourth aspect of the present invention,

An inspection apparatus for a photomask substrate having a transfer pattern formed on a first main surface of a transparent substrate based on design drawing data W1,

A stage on which the photomask substrate is placed,

Measuring means for measuring the shape of the transfer pattern of the photomask substrate in a state placed on the stage to obtain pattern inspection data X1;

And a determination means for determining the good or bad of the transfer pattern,

The determination means,

Storage means for holding inspection device-specific data M2 indicating an amount of deformation that the inspection device exerts on the shape of the photomask substrate;

And input means for inputting the design drawing data W1,

It is an inspection apparatus for a photomask substrate that performs the determination using the coordinate shift amount D5 resulting from the inspection apparatus specific data M2, the pattern inspection data X1, and the design drawing data W1.

(The 25th form)

The twenty-fifth aspect of the present invention,

An inspection apparatus for a photomask substrate having a transfer pattern formed on a first main surface of a transparent substrate based on design drawing data W1,

A stage on which the photomask substrate is placed,

Measuring means for measuring the shape of the transfer pattern of the photomask substrate in a state placed on the stage to obtain pattern inspection data X1;

And a determination means for determining the good or bad of the transfer pattern,

The flatness coefficient k3 of the stage of the inspection device is,

-100nm≤k3≤100nm

To satisfy,

The determination means,

And input means for inputting the design drawing data W1 and back surface data S2 indicating a shape of the back surface of the photomask substrate,

It is an inspection apparatus for a photomask substrate that performs the determination using the coordinate shift amount D6 resulting from the back surface data S2, the pattern inspection data X1, and the design drawing data W1.

ADVANTAGE OF THE INVENTION According to this invention, productivity and cost can be made more advantageous by performing more efficiently improvement of the coordinate precision in manufacture of a photomask.

1 is a cross-sectional view showing an example of a photomask substrate.
2 is a schematic diagram showing a configuration example of a drawing device according to an embodiment of the present invention.
3 is a diagram illustrating a method of manufacturing a photomask substrate according to an embodiment of the present invention, in which (a) is a step of preparing data S2 on the back side of the photomask substrate, and (b) is a step of preparing data specific to a drawing device M1. Step, (c) is a step of obtaining height variation data H1, (d) is a step of obtaining a coordinate shift synthesis amount D1, and (e) is a diagram showing a step of obtaining correction drawing data W2.
4 is a diagram illustrating a method of manufacturing a photomask substrate and a method of manufacturing a display device according to an embodiment of the present invention, wherein (a) is a step of drawing a pattern on a photomask substrate, and (b) is a photomask substrate. A diagram showing a step of exposing.
Fig. 5A is a diagram showing an example of data S2 on the back surface of a photomask substrate, and Fig. 5B is a diagram showing an example of data M1 specific to a drawing device.
Fig. 6A is a diagram showing an example of data obtained by mirror inversion of the back surface data S2 of a photomask substrate, and Fig. 6B is a diagram showing an example of height variation data H1.
7 is a diagram for describing an example of XY transformation.
Fig. 8 is a conceptual diagram showing the relationship between the drawing positions of design drawing data and corrected drawing data.
9 is a diagram illustrating a method of inspecting a photomask according to an embodiment of the present invention, in which (a) is a step of obtaining pattern inspection data X1, (b) is a step of preparing back surface data S2 of a photomask substrate, ( c) is the step of preparing the test device specific data M2, (d) is the step of obtaining the height variation data H2, (e) is the step of obtaining the coordinate shift composite amount D4, and (f) is the step of obtaining the inspection data X2 for comparison. A diagram showing the step of doing.
10 is a schematic diagram showing a configuration example of a photomask substrate inspection apparatus according to an embodiment of the present invention.
Fig. 11 is a view for explaining an example of a photomask according to a conventional manufacturing method, in which (a) is a state of a photomask substrate, (b) is a drawing step, and (c) is a diagram showing an exposure step.
12 is a diagram illustrating another example of a photomask according to a conventional manufacturing method, in which (a) is a step of obtaining film surface shape data of a photomask substrate, and (b) is a step of obtaining height distribution data of a film surface of a substrate on a stage. , (c) is a diagram showing a step of obtaining corrected drawing data.
13 is a view for explaining another example of a photomask according to a conventional manufacturing method, wherein (a) is a diagram showing a step of drawing a pattern on a photomask substrate, and (b) a step of exposing the photomask substrate.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

The present invention includes a photomask manufacturing method, a drawing device, a display device manufacturing method, a photomask substrate inspection method, and a photomask substrate inspection apparatus. Hereinafter, each embodiment will be described.

<First embodiment>

The first embodiment of the present invention,

As a manufacturing method of a photomask having a transfer pattern based on design drawing data W1 on a first main surface of a transparent substrate,

A step of placing a photomask substrate in which a thin film and a resist film are stacked on the first main surface on a stage of a drawing apparatus;

A drawing step of performing drawing on the photomask substrate, and

A step of patterning the thin film using a resist pattern formed by developing the resist film,

In the above drawing process,

Drawing device specific data M1 indicating an amount of deformation that the drawing device exerts on the shape of the photomask substrate;

Prepare back surface data S2 representing the shape of the second main surface of the photomask substrate,

A method for manufacturing a photomask, comprising reflecting the coordinate shift synthesis amount D1 due to the drawing device specific data M1 and the back surface data S2 to the design drawing data W1, and drawing a transfer pattern on the photomask substrate. It is about.

In this embodiment, as an example, the photomask substrate 1 shown in FIG. 1 is used. This photomask substrate 1 is a photomask blank provided with a resist, and includes a transparent substrate 2, a light shielding film 3 as a thin film, and a resist film 4. The transparent substrate 2 has two main surfaces 2a and 2b in relation to the front and back. On the first main surface 2a of the transparent substrate 2, a light shielding film 3 and a resist film 4 are sequentially stacked. In addition, in this embodiment, the main surface of the photomask substrate 1 positioned on the side of the first main surface 2a of the transparent substrate 2 is also referred to as the first main surface, the surface, or the film surface of the photomask substrate 1. . Further, the main surface of the photomask substrate 1 positioned on the side of the second main surface 2b of the transparent substrate 2 is also referred to as the second main surface or the rear surface of the photomask substrate 1.

As the transparent substrate 2, a transparent material such as quartz glass can be flatly and smoothly polished. As a transparent substrate used for a photomask for manufacturing a display device, it is preferable to use a square having a main surface of 300 to 1800 mm on one side and a thickness of 5 to 16 mm. In the photomask substrate 1, a Cr (chromium)-based light-shielding film 3 is formed as a thin film on the first main surface 2a of the transparent substrate 2, and a resist film 4 is formed on the light-shielding film 3. It is obtained by forming. Here, a photoresist is used as the material of the resist film 4. The photoresist may be of a positive type or a negative type, but a positive type is used here. The material of the thin film is, of course, not limited to the above, and any material may be used as long as it is a material used as a film (such as a light-shielding film or a semi-transmissive film) constituting a photomask.

In order to manufacture a photomask having a transfer pattern using the photomask substrate 1 described above, a drawing step of performing drawing on the photomask substrate 1 and a step of patterning the light-shielding film 3 (hereinafter, It is necessary to perform (referred to as "patterning process"). Among these, in the drawing process, the resist film 4 of the photomask substrate 1 is irradiated with an energy beam such as a laser beam, and the irradiation position is changed to draw the transfer pattern. In the subsequent patterning process, the resist film 4 is developed using a developer or the like, and a resist pattern is formed on the light-shielding film 3 of the photomask substrate 1. Further, the light shielding film 3 is patterned using a resist pattern. When the light-shielding film 3 is formed of a Cr-based material as described above, the light-shielding film 3 can be patterned using an etchant for Cr.

2 is a conceptual diagram of a drawing apparatus used in a method for manufacturing a photomask according to an embodiment of the present invention.

As the drawing apparatus, an EB (Electron Beam) drawing apparatus, a laser drawing apparatus, and the like can be applied. Here, a laser drawing apparatus for FPD is used. This drawing apparatus includes a stage 10, drawing means 11, height measuring means 12, and drawing control system 15.

With reference to FIGS. 1 and 2, the stage 10 supports (fixes) the photomask substrate 1 to be drawn in a horizontally mounted state. At this time, the photomask substrate 1 is disposed with the first main surface 2a of the transparent substrate 2 on which the thin film (light shielding film 3 in this embodiment) is formed upward.

The drawing means 11 has a drawing head 14 (see Fig. 4) that moves in parallel with the XY plane while irradiating a laser beam. By moving the drawing head 14, the entire film surface of the photomask substrate 1 can be scanned with a laser beam. However, since scanning by the laser beam is performed by relative movement of the drawing head 14 and the stage 10, it may be performed by moving the stage 10 instead of moving the drawing head 14, The movement of the drawing head 14 and the movement of the stage 10 may be appropriately combined and performed.

Here, in a state in which the photomask substrate 1 is mounted on the stage 10 of the drawing apparatus, a plane substantially parallel to the surface of the stage 10 or the main surfaces 2a and 2b of the transparent substrate 2 is an XY plane. It is referred to as (XY coordinate plane), and the axis orthogonal to this XY plane is called the Z axis (the higher side of the height direction is the positive direction). In addition, one of the X-axis and Y-axis orthogonal to the Z-axis in the XY plane is assumed to be arranged parallel to the long side or the short side of the photomask substrate 1. This condition is also the same in the inspection apparatus for a photomask substrate, which will be described later.

The height measuring means 12 has a function of measuring the height of the surface to be measured. For example, a plurality of measuring points are set in a grid shape at predetermined intervals (for example, 10 mm intervals in the X-axis direction and Y-axis direction) on the surface to be measured, and the height of the surface is measured for each measuring point. . Thereby, height distribution data indicating the shape of the surface to be measured is obtained. The height measurement means 12 can perform height measurement using the surface (film surface) of the photomask substrate 1 as a measurement object in the state in which the photomask substrate 1 is mounted on the stage 10. In a state in which the photomask substrate 1 is not mounted on (10), it is possible to measure the height using the surface of the stage 10 as a measurement object.

Detailed functions of the drawing control system 15 will be described later.

In the drawing process, design drawing data W1 is created based on the design of the device to be obtained, and this design drawing data W1 is input by the input means 15b provided in the drawing control system 15. However, when drawing is performed using this design drawing data W1, a problem may arise in the accuracy of the coordinates of the transferred image by the manufactured photomask due to the shape of the photomask substrate or the deformation factor of the substrate caused by the drawing device. . Therefore, it is conceivable to use the corrected drawing data obtained by correcting the design drawing data W1.

Correction of the design drawing data W1 is based on the difference between the shape of the film surface when drawing with the photomask substrate 1 set on the stage 10 of the drawing apparatus and the shape of the film surface when the photomask is set and exposed in the exposure apparatus. The resulting coordinate shift amount can be quantitatively determined, and this can be performed by reflecting the coordinate shift amount in the design drawing data so as to offset the coordinate shift amount. That is, the difference in the shape of the film surface, that is, the difference in height at each coordinate position in the transcription pattern (difference in the Z-axis direction), is converted into the amount of shift in the coordinates in the X-axis direction and the Y-axis direction (XY plane) ( Hereinafter, also referred to as "XY conversion"), and correction in the direction of canceling this deviation may be applied to the corresponding position in the design drawing data W1.

By the way, there are the following four factors as a factor in which the film surface shape of a photomask substrate is deformed during drawing (hereinafter, also referred to as a "deformation factor").

(1) Deformation factors inherent in the drawing apparatus, such as irregularities on the stage surface of the drawing apparatus. As long as the same drawing device is used, there is reproducibility.

(2) Warpage of the photomask substrate due to foreign matter being caught between the stage of the drawing apparatus and the back surface of the photomask substrate. When the photomask substrate is placed on the stage, warpage of the back surface of the photomask substrate due to the pinching of foreign matter appears as a deformation of the film surface on the opposite side thereof.

(3) Unevenness on the film surface serving as the first main surface of the photomask substrate. What remains on the first main surface again after precision polishing for planarization.

(4) Unevenness on the back surface that becomes the second main surface of the photomask substrate.

On the other hand, when the photomask substrate (photomask) on which the transfer pattern is formed is set in the exposure apparatus, a portion outside the region where the transfer pattern is formed is held by a jig or the like. At this time, the photomask substrate is warped by its own weight. However, the influence of the coordinate shift due to the deflection of its own weight of the photomask substrate can be calculated by known parameters such as the material and shape of the photomask substrate, and some exposure apparatuses also have a mechanism to compensate for this. Therefore, in the present invention, attention is paid to the shift in coordinates due to factors other than deformation due to deflection of its own weight of the photomask substrate during exposure. That is, it is assumed that the change in the shape of the photomask substrate at the time of drawing and at the time of exposure as referred to in the present invention does not include a change due to deflection of its own weight of the photomask substrate in the exposure apparatus.

In addition, among the above four deformation factors, the unevenness of the film surface of the photomask substrate of (3) is similarly present at the time of drawing and at the time of exposure, and thus no difference occurs. Therefore, it is considered to correct the coordinate shift caused by the deformation factors of (1), (2), and (4).

Therefore, in the method described in Patent Document 1, as shown in Fig. 12 (a), while acquiring the film surface shape data of the photomask substrate 61, as shown in Fig. 12 (b), drawing With the photomask substrate 61 mounted on the stage 60 of the apparatus, the height distribution of the upper surface of the photomask substrate 61 is measured to obtain height distribution data. Further, as shown in Fig. 12C, corrected drawing data is obtained by correcting the design drawing data using difference data between the film surface shape data and the height distribution data. And, as shown in FIG. 13A, when drawing a pattern by the drawing head 62, the said correction drawing data is applied and a pattern is drawing on the photomask substrate 61. As shown in FIG. As a result, as shown in Fig. 13B, when the photomask substrate 61 is set on the jig 63 of the exposure apparatus and exposed, coordinate shift is prevented from occurring on the transfer image.

In addition, in the case of acquiring the film surface shape data of the photomask substrate 61, by holding the film surface of the photomask substrate 61 so that it is perpendicular to the horizontal plane, bending of the photomask substrate 61 due to its own weight is substantially reduced. In this state, the shape data of the film surface of the photomask substrate 61, that is, the flatness data of the film surface are acquired. This film surface shape data corresponds to the irregularities of the film surface of the photomask substrate of (3).

On the other hand, in the case of acquiring the height distribution data of the photomask substrate 61, the photomask substrate 61 is mounted on the stage 60 of the drawing apparatus with the film surface of the photomask substrate 61 as the upper side. In the state, the height distribution of the upper surface (film surface) of the photomask substrate 61 is measured. Specifically, by setting a plurality of measurement points on the film surface of the photomask substrate 61 placed on the stage 60 of the drawing apparatus, and measuring the height distribution of the film surface at each measurement point, the height distribution of the entire film surface Acquiring data. This height distribution data represents the shape of the film surface in a state in which the photomask substrate 61 is set in the drawing device, and is the sum of the deformation factors from the ideal plane, that is, the deformation of the film surface shape due to the four deformation factors. Means sum.

According to the method described in Patent Document 1, the film surface shape data of the photomask substrate 61 includes the deformation factor of (3), and the height distribution data of the film surface of the photomask substrate 61 is (1). , (2), (3), and (4) transformation factors are included. Accordingly, the difference data between the film surface shape data and the height distribution data includes the deformation factors of (1), (2), and (4). Therefore, in the method described in Patent Document 1, design drawing data is corrected using this difference data. Thereby, it becomes possible to correct the coordinate shift caused by the difference in the shape of the film surface during drawing and exposure.

However, in the method of measuring the height distribution of the film surface by placing the photomask substrate on the stage of the drawing apparatus, each time drawing is performed on the photomask substrate by the drawing means, the height distribution is measured in advance with respect to the photomask substrate. It is necessary to obtain the height distribution data. According to a further study by the present inventor, the occupancy time of the drawing device required to acquire this height distribution data cannot be elapsed in the production of a photomask. Accordingly, the present inventors have studied a method of not increasing the occupancy time of the drawing apparatus when correcting the shift in coordinates due to the difference in the shape of the film surface at the time of drawing and at the time of exposure.

First, as described above, the shift in coordinates due to the difference in the shape of the film surface at the time of drawing and at the time of exposure is due to the deformation factors (1), (2), and (4) described above. Among these, the irregularities on the surface of the stage (1) and the irregularities on the rear surface of the photomask substrate (4) can be grasped by individual measurements, respectively, without mounting the photomask substrate on the drawing apparatus. On the other hand, it is difficult to measure and grasp the warpage of the substrate due to the pinching of the foreign material in (2) before placing the photomask substrate on the drawing apparatus. The reason is that the deformation factor in (2) is very accidental and has no reproducibility. However, with respect to the deformation factor in (2), by appropriately managing the drawing device, the probability of occurrence of foreign matter jamming can be reduced to the maximum, and even if jamming occurs, the amount of warpage of the substrate is reduced and the degree of impact thereof is reduced. It is possible. Therefore, in the present embodiment, it is assumed that the coordinate shift caused by the deformation factors of (1) and (4) is determined.

(Regarding the irregularities of the stage surface)

First, the influence of the deformation factor peculiar to the drawing apparatus, such as irregularities on the surface of the stage in (1), is measured. With reference to FIGS. 1 and 2, for example, the height distribution is measured by the height measuring means 12 in a state in which the photomask substrate 1 is not mounted on the stage 10. In that case, the height measurement means 12 measures the height using the surface of the stage 10 (the surface on which the photomask substrate 1 is placed) as the surface to be measured, and the shape (flatness) of the surface of the stage 10 The height distribution data reflecting is obtained. This data has reproducibility regardless of the photomask substrate mounted on the drawing device.

The measurement can be performed in advance in a state in which the photomask substrate 1 is not placed on the stage 10. Further, the height distribution data on the surface of the stage 10 obtained by this measurement can be held in the storage means 15a of the drawing control system 15. The height distribution data on the surface of the stage 10 becomes drawing device specific data M1 indicating the amount of deformation that the drawing device exerts on the shape of the photomask substrate 1.

However, in addition to the height distribution data on the surface of the stage 10, if there is a factor peculiar to the drawing apparatus that affects the shape of the photomask substrate 1, it may be added to the drawing apparatus peculiar data M1. That is, in addition to the shape of the surface of the stage 10, if there is a factor peculiar to the drawing apparatus that provides deformation to the film surface of the photomask substrate 1 placed thereon, it is measured in advance. Then, the measurement data is provided to the storage means 15a of the drawing control system 15 as a parameter provided to the film surface height distribution (that is, the distribution of the amount of deformation in the Z-axis direction) when the photomask substrate 1 is mounted. Keep it. For this reason, the drawing apparatus peculiar data M1 may contain the height distribution data of the surface of the stage 10, and may contain factor data different from the height distribution data. In the present embodiment, as an example, it is assumed that the drawing device-specific data M1 includes height distribution data of the surface of the stage 10.

In addition, the drawing device specific data M1 may be stored as an XY-transformed value in order to convert it into a coordinate shift amount in the XY plane. The method of XY conversion will be described later. Further, the drawing device-specific data M1 can be stored in the storage means (memory, etc.) 15a of the drawing control system 15 provided in the drawing apparatus. In addition, although the surface shape of the stage 10 hardly changes in the short term, it is considered that it changes slightly in the long term. For this reason, for example, when the number of drawing treatment sheets of the photomask substrate 1 reaches a predetermined predetermined number, the height distribution of the surface of the stage 10 is measured using the height measuring means 12, and the measurement result is On the basis of this, the drawing device specific data M1 held in the storage means 15a of the drawing control system 15 may be updated. The same can be done for device-specific deformation elements other than the stage.

The drawing device-specific data M1 is, for example, a height distribution obtained by setting a plurality of measuring points in a grid shape at predetermined intervals (for example, 10 mm intervals) in the plane of the stage 10, and performing height measurement for each measuring point. You can do it with data. This height distribution data can be saved as a flatness map of the surface of the stage 10. At that time, the position of each measurement point is preferably selected so as to correspond to the position of the measurement point set when acquiring the film surface data or the back surface data of the photomask substrate described later. For example, the interval between the measurement points can be made the same as the pitch P described later. By selecting the position of the measuring point on the surface of the stage 10 in this way, the film surface shape or the back surface shape of the photomask substrate is similar to the surface shape of the stage 10, the height distribution (flatness distribution) by a plurality of measurement points at predetermined intervals. , Flatness map). For this reason, it is convenient in the case of handling data representing each surface shape in association with each measurement position.

The height distribution of the surface of the stage 10 of the drawing apparatus can be measured by the height measuring means 12. Specifically, for example, the height measurement means 12 is disposed at a constant distance from the surface of the stage 10, and the height measurement means 12 is appropriately moved in the X-axis direction and the Y-axis direction in that state. At that time, a mechanism for supporting the height measurement means 12 is used so that the height of the height measurement means 12 changes in the Z-axis direction according to a change in height due to the surface shape of the stage 10. Thereby, a change in the height of the height measuring means 12 can be measured as a change in the height of the surface of the stage 10.

In addition, as a method of measuring the height of the surface, for example, using an optical angle measuring device such as an autocollimeter or a laser flatness measuring device, the angle at each measuring point set at predetermined intervals in the plane of the stage 10 It can be done by measurement. And by this measurement, the flatness of each position by a predetermined measurement pitch can be obtained, and a flatness map can be obtained. In addition, in addition, for example, a method of measuring using an air flow rate for holding a member similar to the height measuring means 12 at a constant position, a method of measuring the capacitance between gaps, a pulse counting using a laser, optical It may be by in-focus or the like, and is not limited to a specific method.

(Regarding the irregularities on the back side of the photomask substrate)

On the other hand, the unevenness of the back surface of the photomask substrate (4) is obtained by measuring the shape of the back surface of the photomask substrate 1. For example, the photomask substrate 1 is held so that its main surface is substantially perpendicular to the horizontal plane, and the bending of the photomask substrate 1 by its own weight substantially affects the shape of the front and back (both main surfaces). The shape of the second main surface (back surface) is measured using a flatness measuring device or the like in a state that does not extend. This measurement can be performed by a flatness measuring device using an optical measuring method. As an example of a measuring device, for example, Kuroda Seiko Co., Ltd. flatness measuring device FTT series, Japanese Patent Laid-Open No. 2007-46946 What is described in the publication, etc. are mentioned. At this time, on the second main surface of the photomask substrate 1, a plurality of intersections (lattice points) of the grid drawn in the X-axis direction and the Y-axis direction are set at equal intervals (the separation distance is set as pitch P), and each The intersection of can be used as the measuring point. In addition, the distance between the predetermined reference plane and the Z-axis direction (direction perpendicular to the reference plane) of each of the measurement points can be measured for each measurement point. The separation distance of each measurement point, that is, the pitch P can be set to, for example, 10 mm. By this measurement, back surface data S2 representing the second main surface shape (flatness) of the photomask substrate 1 is obtained.

In the case of calculating (to obtain a sum or difference) the back surface data S2 of the photomask substrate 1 obtained in this way with data representing the other surface shape, as will be described later, pay attention to the correspondence relationship between the coordinates and the direction of the coordinate axis. There is a need. For example, the combination of the surface shape of the stage 10 of the drawing apparatus and the shape of the back surface of the photomask substrate 1 placed on the stage 10 has an effect on the shape of the film surface of the photomask substrate 1. In view of the impact, it is useful to obtain a flatness map obtained by combining the above-described drawing device-specific data M1 and backside data S2.

In addition, the flatness measuring device used herein is not limited to acquiring the back surface data S2 representing the back surface shape of the photomask substrate 1, but can also be used to acquire data representing the surface shape other than the back surface shape. For example, when acquiring the back surface data S2, the film surface of the photomask substrate 1 is also set to a measurement point in the same manner as above, and the same measurement is performed to indicate the shape of the film surface of the photomask substrate 1. It is also possible to acquire data S1 if it is blocked. In addition, the thickness of the photomask substrate 1 at each measurement point at a corresponding position (distance from the film surface to the back surface at a corresponding measurement point) according to the film surface data S1 and the back surface data S2 of the photomask substrate 1 It is also possible to acquire and obtain the sheet thickness distribution data T of the photomask substrate 1 based on the acquisition result. The thickness distribution of the photomask substrate 1 is also called TTV (Total Thickness Variation). With regard to setting of the measurement points, the separation distance P of each measurement point can be determined from the viewpoint of the measurement time according to the substrate size of the photomask substrate 1 and the viewpoint of correction accuracy. This separation distance P can be, for example, 5 mm≦P≦100 mm, more preferably 10 mm≦P≦50 mm.

In addition, measurement of the shape of the back surface or film surface of the photomask substrate 1 may be performed in a state in which the resist film 4 which is peeled off when it becomes a photomask is formed, or may be performed before the formation of the resist film 4. do. This is because the influence of the resist film 4 is negligibly small compared to the influence of the deformation factors (1) to (4) on the coordinate accuracy. That is, since the film thickness of the resist film 4 is very small (usually about 600 to 1000 nm) and the film thickness fluctuation is even smaller, the shape of the first main surface of the photomask substrate 1 is changed to the resist film 4 This is because there is no problem even if it is measured from the image. In addition, the shape measurement of the main surface of the photomask substrate 1 may be performed while a thin film (light shielding film 3) is formed on the first main surface of the photomask substrate 1, or the transparent substrate 2 before the thin film is formed. ). This is because the effect of the thin film on the flatness of the main surface of the photomask substrate 1 is very slight.

As described above, the causes of the difference in the shape of the film surface during drawing and exposure are the factors (1), (2), and (4) above, and for (2), manufacturing of a drawing device, etc. Considering that the probability of occurrence can be reduced by management of the environment, the main causes of the coordinate shift due to the difference in the shape of the film surface at the time of drawing and at the time of exposure are the above (1) and (4). Therefore, in order to correct the drawing data appropriately, it becomes a task to obtain the sum of the influences of the coordinate shift due to the factors (1) and (4), that is, the coordinate shift synthesis amount D1.

The combined amount of the coordinate shift is the sum of the amount of coordinate shift when a shift occurs from an abnormal coordinate due to a plurality of factors, and the shift is accumulated. Considering that the surface view of the stage 10 of the drawing apparatus and the rear view of the photomask substrate 1 are not ideal in most cases, coordinate deviations from the ideal coordinates arising from their real surface shape are accumulated. Then, it is sufficient to control the drawing so that the resulting coordinate shift is calculated and canceled out.

Therefore, in the present embodiment, when the photomask substrate 1 is mounted on the stage 10 of the drawing apparatus with the film surface as the upper side, and when drawing is performed on the photomask substrate 1 in the drawing process, as described above. Drawing device specific data M1 and back surface data S2 are prepared, and the coordinate shift synthesis amount D1 resulting from these data M1 and data S2 is calculated|required. Then, the coordinate shift synthesis amount D1 caused by the drawing device peculiar data M1 and the back surface data S2 is reflected in the design drawing data W1 in order to cancel the coordinate shift, and the pattern drawing by the drawing means 11 is controlled. In this case, it is preferable to acquire both the drawing device specific data M1 and the back surface data S2 before placing the photomask substrate 1 on the drawing apparatus. The drawing device-specific data M1 can be held in the storage means 15a included in the drawing control system 15 of the drawing device. Further, the back side data S2 can be input by the input means 15b included in the drawing control system 15 of the drawing apparatus after the photomask substrate 1 to be drawn is determined. In the present invention, the preparation of data includes not only inputting data by the input means 15b, but also reading from the storage means 15a.

The process of reflecting the coordinate shift synthesis amount D1 due to the drawing device specific data M1 and the back surface data S2 to the design drawing data W1 in order to offset the coordinate shift can be performed as follows. In addition, the arithmetic processing in this process can be performed by the data control means 15c included in the drawing control system 15 of the drawing apparatus. The outline of the process will be described using FIG. 3.

First, as shown in Figs. 3A and 3B, data S2 on the back surface of the photomask substrate 1 and data M1 specific to the drawing device are prepared. Next, as shown in Fig. 3(c), using the data obtained by mirror inversion (left-right inversion) of the back surface data S2 of the photomask substrate 1 and the drawing device specific data M1, the photomask substrate 1 ), the height fluctuation data H1 of the film surface is obtained. Next, as shown in Fig. 3(d), the previously obtained height variation data H1 is converted (XY conversion) into the amount of shift in the coordinates of the XY plane (X-axis direction and Y-axis direction) to synthesize the coordinate shift. Find the amount D1. Next, as shown in Fig. 3E, by correcting the design drawing data W1 based on the coordinate shift synthesis amount D1, the corrected drawing data W2 is obtained.

The above correction drawing data W2 is drawing data for placing the photomask substrate 1 on the stage 10 and drawing a pattern by the drawing head 14, as shown in Fig. 4A. Applies to At this time, the pattern drawn on the photomask substrate 1 is different from the pattern indicated by the design drawing data W1 by the amount corresponding to the coordinate shift synthesis amount D1. However, as shown in Fig. 4B, when the photomask substrate 1 is set on the jig 16 of the exposure apparatus and exposed, the coordinate shift is canceled by the coordinate shift synthesis amount D1. The transferred image according to the pattern indicated by the design drawing data W1 is obtained.

Hereinafter, the process of reflecting the coordinate shift synthesis amount D1 caused by the drawing device specific data M1 and the back surface data S2 to the design drawing data W1 will be described in detail.

5A shows an example of back surface data S2 obtained by measuring the shape of the back surface of the photomask substrate 1. FIG. 5B shows an example of the drawing apparatus specific data M1 obtained by measuring the surface shape of the stage 10 of the drawing apparatus. In Figs. 5A and 5B, for example, the height of the reference plane (least square plane) obtained by the least squares method from each measurement data is set to zero, and the height is higher than the reference plane. A high portion (a portion that takes a positive value) is expressed as a relatively light concentration, and a portion whose height is lower than a reference plane (a portion that takes a negative value) is expressed as a relatively dark concentration. The back surface data S2 of the photomask substrate 1 may be input from the input means 15b included in the drawing control system 15 of the drawing apparatus after the photomask substrate 1 to be drawn is determined. Further, the drawing device specific data M1 may be previously stored in the storage means 15a included in the drawing control system 15 of the drawing device.

Next, the height variation data H1 in the Z-axis direction is obtained by adding up the drawing device-specific data M1 and the back surface data S2. At that time, if the directions of the X and Y coordinates of the back side data S2 (the directions of the X and Y axes in the XY plane) and the directions of the X and Y coordinates of the drawing device specific data M1 do not match, these data are summed. Before doing this, you need to match the direction of the XY coordinates of both data. For example, if the back side data S2 is measured from the back side of the photomask substrate 1, the back side data S2 is mirrored as shown in FIG. By reversing around the Y axis indicated by ), the direction of the XY axis can be matched with respect to the drawing device peculiar data M1. Preferably, the coordinate positions of each measuring point set in the back side data S2 of the photomask substrate 1 and the coordinate positions of each measuring point set on the surface of the stage 10 when measuring the drawing device specific data M1 are matched, respectively. Let it. Alternatively, in either data, the height data of the pseudo-measurement point obtained by interpolating or extrapolating from the actual measuring point may be used. Further, among the measurement points of both data, a plurality of representative points may be selected so that they coincide with each other.

However, when the backside data S2 is mirror-inverted as described above, the top and bottom of the height (Z axis) of each measurement point is inverted. Therefore, in the case of calculating the height variation data H1 of the film surface by the sum (sum) of the drawing device specific data M1 and the back surface data S2, the mirror inversion data of the back surface data S2 is obtained from the drawing device specific data M1 as shown in the following equation. By subtracting, the height variation data H1 of the film surface of the photomask substrate 1 (see Fig. 6B) is obtained.

(Height fluctuation data H1) = (Drawer specific data M1)-(Mirror inversion data of back side data S2)

Next, the height variation data H1 is converted into a shift amount of coordinates in the XY plane (X-axis direction and Y-axis direction) to obtain a coordinate shift synthesis amount D1. Below, a specific method of XY conversion is illustrated.

(XY conversion)

First, as shown in FIG. 7, the film surface of the photomask substrate 1 in the case of an ideal plane without deformation is virtually referred to as a reference plane 21. This reference surface 21 becomes a surface in which the height variation data H1 of the film surface determined by the above calculation is zero. However, most of the height variation data H1 obtained by actual calculation takes a value larger or smaller than zero. Therefore, for example, between the measurement point 22-1 where the height variation data H1 is zero and the measurement point 22-2 adjacent in the X-axis direction or Y-axis direction with respect to this measurement point 22-1, the Z-axis direction When a difference in the height of H occurs at, the angle Φ formed between the film surface of the photomask substrate 1 and the reference surface 21 due to the difference in height is,

It is represented by Pitch is an interval between two adjacent measuring points (pitch P described above).

In the above (Equation 1), H/Pitch can also be considered as a gradient in the height direction of the substrate surface.

Also, if the value of Φ is sufficiently small,

It can also be approximated. However, in the following description, (Formula 1) is used.

In the above case, if the two measuring points 22-1 and 22-2 are adjacent to each other in the X-axis direction, for example, the coordinates of the measuring points 22-2 in the X-axis direction are shifted due to the difference in height. d is, when the thickness of the photomask substrate 1 is t, in general,

It can be obtained by

The thickness t of the photomask substrate 1 can be the average thickness of the photomask substrate 1.

In addition, even in the above, if Φ is sufficiently small,

It can also be approximated.

The coordinate shift caused by the difference in the heights of the two measuring points can be obtained in the same manner as above for two measuring points adjacent in the Y-axis direction.

Thereby, with respect to the X-axis direction and the Y-axis direction, the height variation data H1 corresponding to the pitch is converted into a coordinate shift on the XY plane at each measurement point, and a coordinate shift synthesis amount D1 can be obtained. That is, it is possible to quantitatively grasp the coordinate shift occurring due to the height distribution indicated by the height variation data H1. Then, based on this coordinate shift synthesis amount D1, by correcting the design drawing data W1 in a direction that cancels the coordinate shift in advance, the corrected drawing data W2 can be obtained. Fig. 8 is a conceptual diagram showing the relationship between the drawing positions of the design drawing data and the corrected drawing data, in which a black circle in the drawing indicates a drawing position of the design drawing data W1, and a gray circle indicates a drawing position of the corrected drawing data W2.

Returning to FIGS. 1 and 2, when drawing on the photomask substrate 1 placed on the stage 10, the drawing apparatus performs drawing using the corrected drawing data W2. Specifically, the drawing control system 15 of the drawing apparatus applies the corrected drawing data W2 to control the drawing means 11 to draw a transfer pattern on the photomask substrate 1 on the stage 10. Thereby, the coordinate shift synthesis amount D1 is reflected in the design drawing data W1, and a transfer pattern can be drawn on the photomask substrate 1.

According to the method described above, even without measuring the height distribution by placing the photomask substrate 1 on the stage 10 of the drawing apparatus, the coordinates of the pattern due to the difference in the shape of the substrate surface (film surface) during drawing and exposure are shifted. Can be corrected. Thereby, when increasing the coordinate accuracy of the pattern formed on the object to be transferred, the occupation time of the drawing device can be suppressed as short as possible. Therefore, it becomes possible to improve the production efficiency of the photomask.

Here, in order to reflect the coordinate shift synthesis amount D1 in the design drawing data W1, the design drawing data W1 is corrected based on the coordinate shift synthesis amount D1, and the resulting correction drawing data W2 is used to use the photomask substrate 1 ), but the present invention is not limited to this. For example, instead of correcting the design drawing data W1, the coordinate system of the drawing device is corrected based on the above coordinate shift synthesis amount D1 to obtain a corrected coordinate system, and this corrected coordinate system is used together with the design drawing data W1. You may draw it. In this case, since the coordinate system of the drawing device is corrected so as to cancel the coordinate deviation, pattern drawing is performed by applying the design drawing data W1 to the corrected coordinate system, so that the coordinate deviation synthesis amount D1 is reflected in the design drawing data W1. , A transfer pattern can be drawn on the photomask substrate 1.

In addition, the X-axis and Y-axis on the photomask substrate 1 may be the X-axis direction and the short-side direction as the Y-axis direction, respectively, and the long side of the main surface of the substrate may be the long side of the substrate. The direction may be the Y-axis direction, and the short side direction may be the X-axis direction.

Further, the back surface data S2 of the photomask substrate 1 may be calculated and obtained from the sheet thickness distribution data T and the film surface data S1 of the photomask substrate 1.

In addition, in the present invention, it goes without saying that the case where the same result is obtained even if the front and rear of the calculation are replaced in addition to the above-described calculation order, it is not excluded. That is, as long as the effect of the present invention is obtained, the present invention also includes a form in which the order of the steps is replaced.

In the above, the method of correcting the design drawing data W1 or correcting the coordinate system of the drawing apparatus has been described without performing height measurement on the stage 10 of the drawing apparatus. In this method, since data S2 on the back surface of the photomask substrate 1 is obtained even without using a drawing device, the occupancy time of the drawing device is not substantially increased. On the other hand, in order to obtain the back surface data S2 of the photomask substrate 1, it is necessary to store the back surface data S2 by measuring the shape of the back surface of the photomask substrate 1 for each photomask substrate. It requires a predetermined number of steps and a predetermined time, and can be a new problem in achieving further efficiency.

Therefore, with respect to the degree of influence of the coordinate shift, a method that selects ones with sufficiently small irregularities on the main surface (especially, the second main surface) of the photomask substrate 1, and thereby does not perform measurement to acquire the back surface data S2, is considered. do. That is, instead of the coordinate shift synthesis amount D1 in the above embodiment, the coordinate shift amount D2 is obtained using only the drawing device specific data M1, and this coordinate shift amount D2 is reflected in the design drawing data W1, and the photomask substrate 1 ) To draw the transcription pattern. Hereinafter, this method will be described as a second embodiment of the present invention.

<2nd embodiment>

The second embodiment of the present invention,

As a manufacturing method of a photomask having a transfer pattern based on design drawing data W1 on a first main surface of a transparent substrate,

A step of placing a photomask substrate in which a thin film and a resist film are stacked on the first main surface on a stage of a drawing apparatus;

A drawing step of performing drawing on the photomask substrate, and

A step of patterning the thin film using a resist pattern formed by developing the resist film,

The flatness coefficient k1 of the back surface of the photomask substrate is,

-100nm≤k1≤100nm

When satisfying,

In the above drawing process,

Prepare drawing device specific data M1 indicating the amount of deformation that the drawing device exerts on the shape of the photomask substrate,

It relates to a method for manufacturing a photomask characterized by reflecting the coordinate shift amount D2 due to the drawing device specific data M1 to the design drawing data W1, and drawing a transfer pattern on the photomask substrate.

This method can be suitably used when a photomask substrate having high flatness is used, particularly when the flatness of the back surface (second main surface) of the photomask substrate is excellent.

In addition, the above method is preferably applied when it is known in advance that the flatness of the back surface of the photomask substrate is within a range that does not substantially affect the coordinate shift.

That is, the flatness coefficient k1 of the rear surface of the photomask substrate is the thickness of the photomask substrate t1, and the measurement pitch (separation distance between each measurement point) applied when acquiring the flatness map of the rear surface of the photomask substrate is p1. And, when h1 is the difference in height in the Z-axis direction of two adjacent measuring points in the X-axis direction or the Y-axis direction, it is defined by the following equation.

k1=(t1/2)×(h1/p1)

Here, t1 may be an average thickness of the substrate or a thickness according to the standard.

In most cases, for photomask substrate products, the flatness information of the main surface (film surface, back surface) as a numerical value representing its characteristics is the measurement pitch p1 and height data in the Z-axis direction at each measurement point, such as a flatness map. It is attached in the form of.

The above-mentioned h1/p1 means the amount of coordinate shift assumed due to the difference in height in the Z-axis direction between a predetermined measurement point and a measurement point adjacent thereto. If this is 100 nm or less over the entire in-plane of the photomask substrate, this potential coordinate shift does not substantially affect the performance of a display device manufactured using the photomask substrate. Therefore, the value of the flatness coefficient k1 is preferably -100 nm≦k1≦100 nm, more preferably -50 nm≦k1≦50 nm. Further, the value of the measurement pitch p1 is preferably 5 mm≦p1≦100 mm, and more preferably 10 mm≦p1≦50 mm.

Therefore, in the second embodiment, when the flatness coefficient k1 of the back surface of the photomask substrate satisfies -100 nm ≤ k1 ≤ 100 nm (more preferably, -50 nm ≤ k1 ≤ 50 nm), the above In place of the height variation data H1 used in the first embodiment, the drawing device peculiar data M1 is applied, and the coordinate displacement is corrected using the coordinate displacement amount D2 derived from the drawing apparatus peculiar data M1. The correction method at that time is basically the same as in the first embodiment.

That is, assuming that the drawing device peculiar data M1 represents the height distribution data in the Z-axis direction, the drawing device peculiar data M1 is converted into a shift amount of the coordinates in the XY plane, and the coordinate shift amount D2 is obtained. Then, this coordinate shift amount D2 is reflected in the design drawing data W1, and a transfer pattern is drawn on the photomask substrate 1. Specifically, the design drawing data W1 is corrected based on the coordinate shift amount D2, and drawing is performed on the photomask substrate 1 using the corrected drawing data obtained thereby. Alternatively, instead of correcting the design drawing data W1, based on the coordinate shift amount D2, the coordinate system of the drawing device is corrected to obtain a corrected coordinate system, and this corrected coordinate system is used together with the design drawing data W1 to draw. .

According to the above method, when the flatness coefficient k1 of the back surface of the photomask substrate satisfies a predetermined condition, in the exposure process, the back surface data S2 of the photomask substrate is not used, and the drawing device-specific data M1 is used. The coordinate shift amount D2 is reflected in the design drawing data W1, and a transfer pattern is drawn on the photomask substrate. For this reason, there is no need to measure the shape of the back surface for each photomask substrate, and further efficiency improvement can be achieved.

In addition, although the case where the drawing device specific data M1 is applied instead of the height variation data H1 has been described here, the back surface data S2 of the photomask substrate may be applied instead of the height variation data H1. Hereinafter, this method will be described as a third embodiment of the present invention.

<3rd embodiment>

The third embodiment of the present invention,

As a manufacturing method of a photomask having a transfer pattern based on design drawing data W1 on a first main surface of a transparent substrate,

A step of placing a photomask substrate in which a thin film and a resist film are stacked on the first main surface on a stage of a drawing apparatus;

A drawing step of performing drawing on the photomask substrate, and

A step of patterning the thin film using a resist pattern formed by developing the resist film,

The flatness coefficient k2 of the stage of the drawing device is,

-100nm≤k2≤100nm

When satisfying,

In the above drawing process,

Prepare back surface data S2 representing the shape of the second main surface of the photomask substrate,

The present invention relates to a method for manufacturing a photomask, wherein the amount of coordinate shift D3 caused by the back surface data S2 is reflected in the design drawing data W1, and a transfer pattern is drawn on the photomask substrate.

This method can be applied in the case of using a drawing device having a high flatness of the stage 10.

In addition, it is preferable to apply the above method when it is known in advance that the drawing device-specific data M1 is within a range that does not substantially affect the coordinate shift.

That is, the flatness coefficient k2 of the stage 10 is a coefficient representing the flatness of the surface of the stage 10, and in the drawing apparatus, the measurement pitch applied when acquiring the flatness map of the stage on which the photomask substrate is placed is obtained ( The separation distance between each measurement point) is denoted p2, and the difference between the heights of two adjacent measurement points in the X-axis direction or the Y-axis direction in the Z-axis direction is h2, it is defined by the following equation.

k2=(t2/2)×(h2/p2)

Here, t2 can be, for example, 16 mm in consideration of the maximum thickness of the photomask substrate to be handled.

The above-described h2/p2 means the amount of coordinate shift assumed due to a difference in height in the Z-axis direction between a predetermined measurement point and a measurement point adjacent thereto. If this is 100 nm or less over the entire surface of the stage 10, this potential coordinate shift does not substantially affect the performance of a display device manufactured using the photomask substrate. Therefore, the value of the flatness coefficient k2 of the stage 10 is preferably -100 nm≦k2≦100 nm, more preferably -50 nm≦k2≦50 nm. Further, the value of p2 is preferably 5 mm≦p2≦100 mm, and more preferably 10 mm≦p2≦50 mm.

Therefore, in the third embodiment, when the flatness coefficient k2 of the stage 10 of the drawing apparatus satisfies -100 nm≦k2≦100 nm (more preferably, -50 nm≦k2≦50 nm), , In place of the height variation data H1 used in the first embodiment, the back side data S2 of the photomask substrate was applied, and the coordinate shift was corrected using the coordinate shift amount D3 derived from the back side data S2. The correction method at that time is basically the same as in the first embodiment.

That is, the back surface data S2 of the photomask substrate is converted into a shift amount of the coordinates of the XY plane, and a coordinate shift amount D3 is obtained. Then, this coordinate shift amount D3 is reflected in the design drawing data W1, and a transfer pattern is drawn on the photomask substrate 1. Specifically, the design drawing data W1 is corrected based on the coordinate shift amount D3, and drawing is performed on the photomask substrate 1 using the corrected drawing data obtained thereby. Alternatively, instead of correcting the design drawing data W1, based on the coordinate shift amount D3, the coordinate system of the drawing device is corrected to obtain a corrected coordinate system, and this corrected coordinate system is used together with the design drawing data W1 to draw. .

In addition, in the first to third embodiments, after the drawing step is completed, the resist film on the photomask substrate is developed by a developing step to form a resist pattern. Then, when the resist pattern is used as a mask and the thin film is patterned by etching, a transfer pattern is formed. Although both dry etching and wet etching can be applied to the etching of the thin film, it is effective to apply wet etching as a photomask for FPD.

In addition, in the case of manufacturing a photomask, patterning by a process of drawing, developing, and etching can be repeated on the same photomask substrate as necessary. Furthermore, it may include a process of forming a new thin film.

In addition, there are no particular restrictions on the use of the photomask manufactured by the above method. The transfer pattern is a mask pattern based on the design of the device to be obtained. The photomask having this transfer pattern may be a so-called binary mask having a binary pattern including a light-transmitting portion and a light-shielding portion. Alternatively, it may be a multi-tone photomask having a tone of three or more gradations. Alternatively, it may be a phase shift mask having a predetermined transmittance and having a phase shift function of inverting the phase of exposure light. As a thin film of the photomask substrate, a halftone phase shift mask to which a material or film thickness having a phase shift effect is applied can also be used.

In addition, it is preferable that the transfer pattern of the photomask is a pattern patterned for manufacturing a display device. In this case, the photomask according to the manufacturing method of the present invention is exposed with an exposure apparatus, and the transfer pattern possessed by the photomask can be transferred to a transfer object such as a display panel substrate.

In addition, the present invention includes a step of preparing a photomask manufactured by applying the manufacturing method according to the first embodiment, the second embodiment, or the third embodiment, and a step of exposing the photomask using an exposure device. And a method of manufacturing the included display device. In that case, in the step of exposing the photomask, the photomask obtained by the above manufacturing method is mounted on the exposure apparatus, and the transfer pattern formed on the photomask is transferred to the transfer object.

In addition, as the exposure apparatus used in the method for manufacturing the display device, an exposure apparatus known for use in liquid crystal displays (LCDs) or flat panel displays (FPDs) can be suitably used. As this type of exposure apparatus, for example, exposure light including i-line, h-line, and g-line is used, and the numerical aperture (NA) is 0.08 to 0.15, and the coherent factor (σ) is about 0.7 to 0.9. A projection exposure apparatus having an equal magnification optical system can be used. Of course, you may use a proximity exposure apparatus.

In addition, the present invention can be realized not only as a method for manufacturing a photomask, but also as a drawing device used for manufacturing a photomask. Hereinafter, a drawing device will be described.

<4th embodiment>

The fourth embodiment of the present invention,

As a drawing device for drawing a transfer pattern based on design drawing data W1 on a photomask substrate in which a thin film and a resist film are stacked on a first main surface of a transparent substrate,

A stage on which the photomask substrate is placed,

A drawing means for drawing by irradiating an energy beam for drawing on the photomask substrate in a state placed on the stage;

Equipped with a drawing control system for calculating and controlling pattern data used for drawing,

The drawing control system,

Storage means for holding drawing device-specific data M1 indicating an amount of deformation that the drawing device exerts on the shape of the photomask substrate;

Input means for inputting the design drawing data W1 and back surface data S2 indicating a back surface shape of the photomask substrate;

And a data control means for controlling the drawing by the drawing means by performing an operation to reflect the coordinate shift synthesis amount D1 caused by the drawing device specific data M1 and the back surface data S2 to the design drawing data W1. It relates to a drawing device to be used.

As shown in FIG. 2, the drawing apparatus according to the present embodiment includes a stage 10, a drawing unit 11, a height measuring unit 12, and a drawing control system 15. Further, the drawing control system 15 includes a storage unit 15a, an input unit 15b, and a data control unit 15c. The storage means 15a is a means for storing and storing various types of data necessary for drawing. The data held by the storage means 15a includes drawing device specific data M1. The input means 15b is a means for inputting necessary information after a photomask substrate to be drawn or a transfer pattern to be drawn on the photomask substrate is determined. The information input through the input means 15b includes design drawing data W1 and backside data S2 of the photomask substrate. The data control means 15c is a means for controlling the drawing by the drawing means 11 by appropriately arithmetic processing the information inputted from the input means 15b. The calculation performed by the data control means 15c includes calculation of pattern data used for drawing, calculation of reflecting the combined amount D1 of coordinate shift to the design drawing data W1, and the like.

The drawing means 11 is a means for emitting an energy beam such as a laser beam and drawing on a photomask substrate.

Here, it is preferable that the drawing device-specific data M1 includes, for example, flatness data of the stage indicating the surface shape of the stage 10 of the drawing apparatus. Further, elements exhibiting reproducibility at each drawing step, such as a jig for holding a photomask substrate on the stage 10, can be used as drawing device specific data M1.

In this embodiment, the drawing device-specific data M1 is held in the storage means 15a of the drawing control system 15. The storage means 15a may hold the drawing device-specific data M1 as a coordinate shift correction amount obtained by converting the coordinate shift amount in the X-axis direction and the Y-axis direction. Further, in the storage means 15a, the drawing device-specific data M1 may be converted into a coordinate shift amount in the X-axis direction and the Y-axis direction, and the coordinate system of the drawing device may be corrected, and may be stored as a correction coordinate system. This is because these are correction elements to be reproduced as long as the same drawing apparatus is used.

In the drawing apparatus, after the photomask substrate to be drawn is determined, the back side data S2 is inputted by the input means 15b of the drawing control system 15. On the other hand, the data control means 15c calculates the coordinate shift synthesis amount D1 resulting from the drawing device-specific data M1 held in the storage means 15a and the back surface data S2 input by the input means 15b. The method of determining the coordinate shift synthesis amount D1 is the same as in the first embodiment. However, the method of obtaining the coordinate shift synthesis amount D1 is not limited thereto, for example, after separately obtaining the coordinate shift amount caused by the drawing device specific data M1 and the coordinate shift amount caused by the back surface data S2, respectively, they The coordinate shift amount may be summed to obtain the coordinate shift composite amount D1. In that case, either of the coordinate shift amount caused by the drawing device specific data M1 and the coordinate shift amount caused by the back surface data S2 may be obtained first. In addition, the calculation of the amount of coordinate shift may be performed by XY transformation similarly to the first embodiment.

When the coordinate shift synthesis amount D1 is thus obtained, the data control means 15c reflects the coordinate shift synthesis amount D1 to the design drawing data W1 to control the drawing by the drawing means 11. The method of reflecting the coordinate shift synthesis amount D1 to the design drawing data W1 is the same as in the first embodiment. That is, it is sufficient to correct the design drawing data W1 based on the coordinate shift synthesis amount D1, and control the drawing by the drawing means 11 using the corrected drawing data W2 obtained thereby. Alternatively, based on the coordinate shift synthesis amount D1, the coordinate system of the drawing device is corrected to obtain a corrected coordinate system, and this correction coordinate system is used together with the design drawing data W1 to control the drawing by the drawing means 11 .

<Fifth embodiment>

The fifth embodiment of the present invention,

As a drawing device for drawing a transfer pattern based on design drawing data W1 on a photomask substrate in which a thin film and a resist film are stacked on a first main surface of a transparent substrate,

A stage on which the photomask substrate is placed,

A drawing means for drawing by irradiating an energy beam for drawing on the photomask substrate in a state placed on the stage;

A drawing control system for controlling drawing by calculating pattern data used for drawing is provided,

The drawing control system,

Storage means for holding drawing device-specific data M1 indicating an amount of deformation that the drawing device exerts on the shape of the photomask substrate;

Input means for inputting the design drawing data W1;

A drawing apparatus comprising: a data control means for performing an operation to reflect the coordinate shift amount D2 due to the drawing apparatus specific data M1 to the design drawing data W1 to control drawing by the drawing unit. will be.

The drawing apparatus having the above configuration can be employed when the flatness coefficient k1 of the back surface of the photomask substrate to be drawn satisfies the following conditions.

-100nm≤k1≤100nm

More preferably, when the condition of -50 nm≦k1≦50 nm is satisfied, the writing apparatus having the above configuration can be suitably used.

The flatness coefficient k1 described above is defined by the following equation, similarly to the second embodiment.

k1=(t1/2)×(h1/p1)

In this way, when the flatness of the back surface of the photomask substrate is high, and the flatness is within a range that does not substantially affect the coordinate shift, the coordinate shift amount D2 derived from the drawing device peculiar data W1 is designed and drawing data W1 By performing an operation to be reflected in the data control means 15c, and controlling the drawing by the drawing means 11 based on the result, it is possible to correct the coordinate shift of the pattern.

<6th embodiment>

The sixth embodiment of the present invention,

As a drawing device for drawing a transfer pattern based on design drawing data W1 on a photomask substrate in which a thin film and a resist film are stacked on a first main surface of a transparent substrate,

A stage on which the photomask substrate is placed,

A drawing means for drawing by irradiating an energy beam for drawing on the photomask substrate in a state placed on the stage;

Equipped with a drawing control system for calculating and controlling pattern data used for drawing,

The flatness coefficient k2 of the stage of the drawing device is,

-100nm≤k2≤100nm

To satisfy,

The drawing control system,

Input means for inputting the design drawing data W1 and back surface data S2 indicating the shape of the back surface of the photomask substrate;

It relates to a drawing apparatus, comprising: a data control means for controlling drawing by the drawing means by performing an operation to reflect the coordinate shift amount D3 caused by the back surface data S2 to the design drawing data W1. .

The drawing device having the above-described configuration can be suitably used when it is known in advance that the drawing device-specific data M1 is in a range that does not substantially affect the coordinate shift. More preferably, when the flatness coefficient k2 of the stage of the drawing apparatus satisfies the condition of -50 nm≦k2≦50 nm, the above-described drawing apparatus can be suitably used.

The flatness coefficient k2 described above is defined by the following equation, similarly to the third embodiment.

k2=(t2/2)×(h2/p2)

In this way, when the flatness of the stage of the drawing apparatus is high and the flatness is within a range that does not substantially affect the coordinate shift, the coordinate shift amount D3 derived from the back surface data S2 of the photomask substrate is designed and drawn data. By performing the operation reflected in W1 by the data control means 15c, and controlling the drawing by the drawing means 11 based on the result, it is possible to correct the coordinate shift of the pattern.

The photomask manufacturing method and drawing apparatus described above can also be used for the photomask substrate inspection method and the photomask substrate inspection apparatus. This is, in the inspection process of the photomask substrate, as in the case of the drawing process, the photomask substrate is placed on the stage of the inspection apparatus with the surface having the transfer pattern as the upper side, and in this state, the shape of the transfer pattern is measured. Because. Hereinafter, an embodiment of a photomask substrate inspection method and a photomask substrate inspection apparatus will be described.

<Seventh embodiment>

The seventh embodiment of the present invention,

A method for inspecting a photomask substrate having a transfer pattern formed on a first main surface of a transparent substrate based on design drawing data W1, comprising:

A step of placing the photomask substrate on a stage of an inspection apparatus,

An inspection data acquisition step of measuring the shape of the transfer pattern to obtain pattern inspection data X1; and

A determination step of determining the good or bad of the transfer pattern,

In the above determination process,

Inspection device specific data M2 indicating the amount of deformation that the inspection device exerts on the shape of the photomask substrate;

Prepare back surface data S2 representing the shape of the second main surface of the photomask substrate,

The inspection of a photomask substrate, characterized in that the determination is performed using the coordinate shift synthesis amount D4 caused by the inspection device specific data M2 and the back surface data S2, the pattern inspection data X1, and the design drawing data W1. It's about the method.

The photomask on which patterning by the drawing process, the developing process, and the etching process has been completed, or the intermediate body thereof, is subjected to an inspection process as a means for confirming the accuracy of patterning. For example, in order to check the shape of the transfer pattern formed on the photomask substrate, especially the coordinate accuracy, the position of a specific pattern in the XY plane or the relative positional relationship between specific patterns (e.g., distance or angle, etc.) Measure your back. This measurement can be performed by measuring means (described later) included in the inspection device. The inspection device for a photomask substrate of the present invention may include a measuring device for measuring the pattern shape of a transfer pattern.

In the inspection process of the photomask substrate, as shown in Fig. 9A, the photomask substrate 1 serving as the subject is placed on the stage 30 of the inspection apparatus with the first main surface (film surface) as the upper side. Then, in that state, the shape of the transfer pattern is measured by the measuring means 31 of the inspection apparatus, and pattern inspection data X1 is obtained. The pattern inspection data X includes what is called so-called measurement data. In such a case, the unevenness of the surface of the stage 30, the unevenness of the back surface of the photomask substrate 1, or the like causes a coordinate shift factor similar to that of the above drawing. And, due to this coordinate shift factor, there is a possibility that the accuracy of the inspection result is impaired. Therefore, in the inspection process, it is necessary to reflect the coordinate shift factor with respect to the pattern inspection data X1 obtained by the inspection device to perform correct inspection determination.

(Judgment process)

Therefore, in the determination process, as shown in Fig. 9B, back surface data S2 representing the second main surface shape of the photomask substrate 1 is prepared. In the case where the back side data S2 is already obtained before drawing is performed in the above-described drawing step, the back side data S2 can be applied as it is. In addition, in the case where the sheet thickness distribution data T and the film surface data S1 of the photomask substrate 1 are obtained prior to the back surface data S2, the sheet thickness distribution data T of the photomask substrate 1 and the sheet thickness distribution data T of the photomask substrate 1 The back surface data S2 may be calculated and obtained from the film surface data S1.

In addition, in the determination process, as shown in FIG. 9(c), inspection apparatus specific data M2 indicating the amount of deformation exerted by the inspection apparatus on the shape of the photomask substrate 1 is prepared. It is preferable that the flatness data of the stage 30 of the inspection apparatus is included in this inspection apparatus specific data M2, for example. In that case, as in the case of the above-described drawing apparatus, height measurement is performed using the surface of the stage 30 (the surface on which the photomask substrate 1 is mounted) as the measurement target surface, and the height distribution data obtained thereby, It can be used as flatness data of the stage 30. In addition, it is preferable to hold the test device-specific data M2 in a storage means (described later) included in the test device.

If the inspection device specific data M2 and the back surface data S2 are prepared in this way, the coordinate shift synthesis amount D4 resulting from these data M2 and S2 is obtained. Then, using the coordinate shift synthesis amount D4, the pattern inspection data X1, and the design drawing data W1, it is determined whether or not the transfer pattern is good or bad.

In that case, the coordinate shift synthesis amount D4 can be calculated|required by the method similar to the said 1st embodiment. That is, by obtaining the height variation data H2 in the Z-axis direction based on the sum of the inspection device peculiar data M2 and the back surface data S2, and converting the height variation data H2 into the displacement amount of the coordinates in the XY plane, the coordinate displacement synthesis amount D4 Can be obtained. In addition, as a method of summing the test device-specific data M2 and the back side data S2, the method described in the first embodiment can refer to the method of obtaining the sum of the drawing device-specific data M1 and the back side data S2. That is, it is preferable to perform mirror inversion of any one data and adjustment of the positive and negative values of the Z-axis (see Fig. 9(d)). Also in this case, when calculating the height variation data H2 of the film surface by the sum (sum) of the inspection apparatus specific data M2 and the back surface data S2, the following equation can be applied.

(Height fluctuation data H2) = (Inspection device specific data M2)-(Mirror inversion data of back side data S2)

In addition, in the inspection apparatus for a photomask substrate, as in the case of the above drawing apparatus, a surface parallel to the main surface of the stage or the main surface (especially the second main surface) of the photomask substrate placed horizontally thereon is the XY plane, and this The vertical axis is called the Z axis (the higher the height is the positive direction). In addition, any one of the X-axis and Y-axis orthogonal to the Z-axis in the XY plane can be arranged parallel to the long side or the short side of the photomask substrate.

Next, as shown in Fig. 9E, the height variation data H2 is converted into a shift amount of the coordinates in the X-axis direction and the Y-axis direction to obtain a coordinate shift synthesis amount D4. The method of XY conversion is as already described. Next, as shown in Fig. 9(f), in order to reflect the coordinate shift synthesis amount D4 to the pattern inspection data X1 to cancel the influence of the coordinate shift in the inspection device, the comparison inspection data X2 is Get Specifically, the comparison inspection data X2 is obtained by correcting the pattern inspection data X1 in a direction that cancels the coordinate shift in advance based on the coordinate shift synthesis amount D4. This comparison inspection data X2 is pattern inspection data in which the coordinate shift caused by the inspection device specific data M2 and the coordinate shift caused by the back surface data S2 are added to the pattern inspection data X1 obtained by measuring the shape of the transfer pattern. do. Accordingly, the comparison inspection data X2 is compared with the design drawing data W1, and the transfer pattern is determined whether or not the deviation of the comparison inspection data X2 with respect to the design drawing data W1 is within a predetermined allowable range. . Thereby, the coordinate shift factor caused by the inspection apparatus specific data M2 and the back surface data S2 is reflected, and correct inspection determination can be made.

In addition, although the above determination is made by reflecting the coordinate shift synthesis amount D4 to the pattern inspection data X1, in addition to this, the coordinate shift synthesis amount D4 is reflected in the design drawing data W1 to make the determination. do. In that case, the coordinate shift synthesis amount D4 is reflected in the design drawing data W1, and it is made into the drawing data W3 for comparison, and this drawing data W3 for comparison is compared with the pattern inspection data X1. Then, whether or not the deviation of the pattern inspection data X1 with respect to the comparison drawing data W3 is within a predetermined allowable range, it is determined whether or not the transfer pattern is acceptable. Alternatively, the coordinate system of the inspection device may be corrected by the coordinate shift synthesis amount D4, and the design drawing data W1 may be compared with the pattern inspection data X1 by the corrected coordinate system.

In addition, assuming that the pattern inspection data X1 obtained by measurement is, for example, data indicating the position of a specific pattern present in a specific portion of the transfer pattern (eg, 4 corners of the photomask substrate), this pattern The comparison inspection data X2 obtained by reflecting the coordinate shift synthesis amount D4 in the inspection data X1 is data obtained by shifting the position of a specific pattern by the amount of the coordinate shift by the coordinate shift synthesis amount D4. Therefore, in the comparison of the comparison inspection data X2 and the design drawing data W1, it is checked to what extent the position of the specific pattern indicated by the comparison inspection data X2 is shifted with respect to the position of the specific pattern defined by the design drawing data W1. If the deviation is within the allowable range, the transfer pattern may be determined as "good", and if the deviation is outside the allowable range, it may be determined as "defective". On the other hand, when the coordinate shift synthesis amount D4 is reflected in the design drawing data W1, the comparison drawing data W3 obtained thereby shifts the pattern position of the design drawing data W1 by the coordinate deviation by the coordinate shift synthesis amount D4. It becomes data. Therefore, in the comparison of the comparison drawing data W3 and the pattern inspection data X1, it is checked to what extent the position of the specific pattern indicated by the pattern inspection data X1 is shifted with respect to the position of the specific pattern defined by the comparison drawing data W3, If this deviation is within the allowable range, the transfer pattern may be determined as "good", and if the deviation is outside the allowable range, it may be determined as "defective".

<Eighth embodiment>

The eighth embodiment of the present invention,

A method for inspecting a photomask substrate having a transfer pattern formed on a first main surface of a transparent substrate based on design drawing data W1, comprising:

A step of placing the photomask substrate on a stage of an inspection apparatus,

An inspection data acquisition step of measuring the shape of the transfer pattern to obtain pattern inspection data X1; and

A determination step of determining the good or bad of the transfer pattern,

The flatness coefficient k1 of the back surface of the photomask substrate is,

-100nm≤k1≤100nm

When satisfying,

In the above determination process,

Prepare inspection device specific data M2 indicating the amount of deformation the inspection device exerts on the shape of the photomask substrate,

It relates to a method for inspecting a photomask substrate, characterized in that the determination is performed using a coordinate shift amount D5 caused by the inspection device specific data M2, the pattern inspection data X1, and the design drawing data W1.

This method can be suitably used when a photomask substrate having high flatness is used, particularly when the flatness of the back surface (second main surface) of the photomask substrate is high.

In addition, the above method is preferably applied when it is known in advance that the flatness of the back surface of the photomask substrate is within a range that does not substantially affect the coordinate shift.

The flatness coefficient k1 of the back surface of the photomask substrate is a coefficient defined (defined) similarly to the second embodiment, preferably -100 nm≦k1≦100 nm, more preferably -50 nm≦k1 ≤50 nm.

In addition, assuming that the coordinate shift amount D5 caused by the inspection device specific data M2 is one where the inspection device specific data M2 represents the height distribution data in the Z-axis direction, the inspection device specific data M2 is referred to as It is obtained by converting to the amount of deviation of the coordinates of the direction. Next, instead of the coordinate shift synthesis amount D4 in the seventh embodiment, the coordinate shift amount D5 may be reflected in the pattern inspection data X1 or the design drawing data W1 to determine whether the transfer pattern is good or bad. Thereby, the coordinate shift factor caused by the inspection device specific data M2 is reflected, and correct inspection determination can be made.

<9th embodiment>

The ninth embodiment of the present invention,

A method for inspecting a photomask substrate having a transfer pattern formed on a first main surface of a transparent substrate based on design drawing data W1, comprising:

A step of placing the photomask substrate on a stage of an inspection apparatus,

An inspection data acquisition step of measuring the shape of the transfer pattern to obtain pattern inspection data X1; and

A determination step of determining the good or bad of the transfer pattern,

The flatness coefficient k3 of the stage of the inspection device is,

-100nm≤k3≤100nm

When satisfying,

In the above determination process,

Prepare back surface data S2 representing the shape of the second main surface of the photomask substrate,

The present invention relates to a method for inspecting a photomask substrate, wherein the determination is performed using the coordinate shift amount D6 caused by the back surface data S2, the pattern inspection data X1, and the design drawing data W1.

This method can be applied in the case of using an inspection device having a high level of flatness of the stage.

In addition, the above method is applied when it is known in advance that the deformation factor of the photomask substrate shown in the inspection device-specific data M2 is sufficiently small, and that the inspection device-specific data M2 is within a range that does not substantially affect the coordinate shift. It is desirable to do it.

The flatness coefficient k3 of the stage of the inspection apparatus is a coefficient defined (defined) similarly to the flatness coefficient k2 of the stage of the drawing apparatus in the third embodiment. That is, the flatness coefficient k3 of the stage of the inspection apparatus is the measurement pitch (separation distance of each measurement point) applied when acquiring the flatness map of the stage on which the photomask substrate is placed in the inspection apparatus is p3, and X When h3 is the difference in height of two adjacent measuring points in the axial direction or in the Y-axis direction in the Z-axis direction, it is defined by the following equation.

k3=(t3/2)×(h3/p3)

Here, t3 is, for example, 16 mm in consideration of the maximum thickness of the photomask substrate to be handled.

The flatness coefficient k3 of the stage is preferably -100 nm≦k3≦100 nm, more preferably -50 nm≦k3≦50 nm.

In addition, the coordinate shift amount D6 resulting from the back surface data S2 is obtained by converting the back surface data S2 into a shift amount of the coordinates in the X-axis direction and the Y-axis direction. Next, instead of the coordinate shift synthesis amount D4 in the seventh embodiment, the coordinate shift amount D6 may be reflected in the pattern inspection data X1 or the design drawing data W1 to determine whether the transfer pattern is good or bad. Thereby, the coordinate shift factor caused by the back surface data S2 is reflected, and correct inspection determination can be made.

<10th embodiment>

The tenth embodiment of the present invention,

An inspection apparatus for a photomask substrate having a transfer pattern formed on a first main surface of a transparent substrate based on design drawing data W1,

A stage on which the photomask substrate is placed,

Measuring means for measuring the shape of the transfer pattern of the photomask substrate in a state placed on the stage to obtain pattern inspection data X1;

And a determination means for determining the good or bad of the transfer pattern,

The determination means,

Storage means for holding inspection device-specific data M2 indicating an amount of deformation that the inspection device exerts on the shape of the photomask substrate;

And input means for inputting the design drawing data W1 and back surface data S2 indicating a shape of the back surface of the photomask substrate,

The inspection of a photomask substrate, characterized in that the determination is performed using the coordinate shift synthesis amount D4 caused by the inspection device specific data M2 and the back surface data S2, the pattern inspection data X1, and the design drawing data W1. It relates to the device.

Here, it is preferable that the inspection apparatus-specific data M2 includes stage flatness data indicating the surface shape of the stage of the inspection apparatus.

As shown in FIG. 10, the inspection apparatus for a photomask substrate includes a stage 30, a measurement means 31, and a determination means 32.

The stage 30 supports (fixes) the photomask substrate to be inspected in a horizontal position. When actually placing the photomask substrate on the stage 30, the photomask substrate is placed on the stage 30 with the film surface on the upper side. As a result, the transfer pattern formed on the photomask substrate is in a state of facing the measuring means 31 in the Z-axis direction. Further, the back surface of the photomask substrate is in a state opposite to the surface (upper surface) of the stage 30.

The measuring means 31 is to acquire pattern inspection data X1 by measuring the shape of the transfer pattern of the photomask substrate placed on the stage 30. When the measuring means 31 measures the shape of the transfer pattern, at least one of the measuring means 31 and the stage 30 moves parallel to the XY plane.

The determination means 32 determines whether or not the transfer pattern of the photomask substrate is good or bad. This determination means 32 includes a storage means 32a for storing and holding various types of data necessary for the inspection, and an input means 32b for inputting information necessary for the inspection. The data held by the storage means 32a includes the test apparatus-specific data M2. Further, the information input through the input means 32b includes design drawing data W1 and backside data S2 of the photomask substrate.

The determination means 32 uses data held by the storage means 32a or information input from the input means 32b to determine whether or not the transfer pattern is good or bad. That is, as in the seventh embodiment, the determination means 32 obtains the height variation data H2 in the Z-axis direction based on the sum of the inspection device-specific data M2 and the back surface data S2, and uses the height variation data H2 as the XY plane. By converting to the shift amount of the coordinates of, the combined coordinate shift amount D4 is obtained. Further, the determination means 32 reflects the coordinate shift synthesis amount D4 to the pattern inspection data X1 or the design drawing data W1 to make the determination. Specifically, the determination means 32 reflects the coordinate shift synthesis amount D4 to the pattern inspection data X1, makes the comparison inspection data X2, and compares the comparison inspection data X2 with the design drawing data W1, so that the transfer pattern Judge the good or bad. Alternatively, the determination means 32 reflects the coordinate shift synthesis amount D4 to the design drawing data W1, makes the drawing data W3 for comparison, and compares the drawing data W3 for comparison with the pattern inspection data X1 to determine the quality of the transfer pattern. Is determined. Thereby, the coordinate shift factor caused by the inspection apparatus specific data M2 and the back surface data S2 is reflected, and correct inspection determination can be made.

In addition, in the storage means 32a of the inspection device, as in the case of the drawing device in the fourth embodiment, the inspection device-specific data M2 is converted into a coordinate shift amount in the X-axis direction and the Y-axis direction. It may be retained as a deviation correction amount. Further, in the storage means 32a, the test device specific data M1 may be converted into a coordinate shift amount in the X-axis direction and the Y-axis direction, and the coordinate system of the test device may be corrected, and may be stored as a correction coordinate system.

<Eleventh embodiment>

The eleventh embodiment of the present invention,

An inspection apparatus for a photomask substrate having a transfer pattern formed on a first main surface of a transparent substrate based on design drawing data W1,

A stage on which the photomask substrate is placed,

Measuring means for measuring the shape of the transfer pattern of the photomask substrate in a state placed on the stage to obtain pattern inspection data X1;

And a determination means for determining the good or bad of the transfer pattern,

The determination means,

Storage means for holding inspection device-specific data M2 indicating an amount of deformation that the inspection device exerts on the shape of the photomask substrate;

And input means for inputting the design drawing data W1,

It relates to an inspection apparatus for a photomask substrate that performs the determination using a coordinate shift amount D5 caused by the inspection apparatus specific data M2, the pattern inspection data X1, and the design drawing data W1.

The above inspection apparatus can be suitably used when a photomask substrate having high flatness is used, particularly when the flatness of the back surface (second main surface) of the photomask substrate is high. Specifically, when the flatness coefficient k1 of the back surface of the photomask substrate to be inspected satisfies the following conditions, it can be employed.

-100nm≤k1≤100nm

More preferably, when the condition of -50 nm≦k1≦50 nm is satisfied, the inspection apparatus having the above configuration can be suitably used.

The flatness coefficient k1 described above is defined by the following equation, similarly to the second embodiment.

k1=(t1/2)×(h1/p1)

In this way, when the flatness of the back surface of the photomask substrate is high and the flatness is within a range that does not substantially affect the coordinate shift, the coordinate shift amount D5 derived from the inspection device specific data W2 and the pattern inspection data Using X1 and design drawing data W1, it is determined whether or not the transfer pattern is good or bad. Thereby, the coordinate shift factor caused by the inspection device-specific data W2 is reflected, and correct inspection determination can be made.

<12th embodiment>

The twelfth embodiment of the present invention,

An inspection apparatus for a photomask substrate having a transfer pattern formed on a first main surface of a transparent substrate based on design drawing data W1,

A stage on which the photomask substrate is placed,

Measuring means for measuring the shape of the transfer pattern of the photomask substrate in a state placed on the stage to obtain pattern inspection data X1;

And a determination means for determining the good or bad of the transfer pattern,

The flatness coefficient k3 of the stage of the inspection device is,

-100nm≤k3≤100nm

To satisfy,

The determination means,

And input means for inputting the design drawing data W1 and back surface data S2 indicating a shape of the back surface of the photomask substrate,

It relates to an inspection apparatus for a photomask substrate that performs the determination using the coordinate shift amount D6 caused by the back surface data S2, the pattern inspection data X1, and the design drawing data W1.

The above inspection device is applied when it is known in advance that the deformation factor of the photomask substrate shown in the inspection device-specific data M2 is sufficiently small, and that the inspection device-specific data M2 is within a range that does not substantially affect the coordinate shift. It is desirable.

The flatness coefficient k3 of the stage of the inspection apparatus is a coefficient defined (defined) similarly to the flatness coefficient k2 of the stage of the drawing apparatus in the third embodiment, preferably -100 nm≦k3≦100 nm. , More preferably, -50nm≤k3≤50nm.

In this way, when the flatness of the stage of the inspection device is high, and the inspection device-specific data M2 reflecting the flatness is within a range that does not substantially affect the coordinate shift, the coordinate shift amount D6 resulting from the back surface data S2 and , Pattern inspection data X1 and design drawing data W1 are used to determine whether the transfer pattern is good or bad. Thereby, the coordinate shift factor caused by the back surface data S2 is reflected, and correct inspection determination can be made.

1: photomask substrate
2: transparent substrate
3: shading film
4: resist film
10: stage
11: drawing means
12: height measurement means
15: drawing control system
15a: means of memory
15b: input means
15c: data control means
30: stage
31: measuring means
32: determination means
32a: means of memory
32b: input means

Claims (25)

A method for manufacturing a photomask for manufacturing a display device having a transfer pattern based on design drawing data W1 on a first main surface of a transparent substrate, comprising:
A step of placing a photomask substrate in which a thin film and a resist film are stacked on the first main surface on a stage of a drawing apparatus;
A drawing step of performing drawing on the photomask substrate, and
A step of patterning the thin film using a resist pattern formed by developing the resist film,
In the above drawing process,
Drawing device specific data M1 indicating an amount of deformation that the drawing device exerts on the shape of the photomask substrate;
Prepare back surface data S2 representing the shape of the second main surface of the photomask substrate,
The drawing device specific data M1 includes stage flatness data indicating a surface shape of the stage,
The manufacturing of a photomask, characterized in that, by reflecting the coordinate shift synthesis amount D1 caused by the drawing device specific data M1 and the back surface data S2 to the design drawing data W1, a transfer pattern is drawn on the photomask substrate. Way. The method according to claim 1, wherein when a plane parallel to the main surface of the photomask substrate mounted on the stage of the drawing device is referred to as an XY plane, and an axis perpendicular to the XY plane is referred to as a Z axis,
The coordinate shift synthesis amount D1 is obtained by converting the height variation data H1 in the Z-axis direction by the sum of the drawing device-specific data M1 and the back surface data S2 into coordinate shift amounts in the X-axis direction and the Y-axis direction. It characterized in that, the manufacturing method of a photomask. The method according to claim 1 or 2, wherein in the drawing step, in order to reflect the coordinate shift synthesis amount D1 in the design drawing data W1, to offset the coordinate shift based on the coordinate shift synthesis amount D1 A method for manufacturing a photomask, characterized in that the design drawing data W1 is corrected to obtain corrected drawing data W2, and drawing is performed using the corrected drawing data W2. The method according to claim 1 or 2, wherein in the drawing step, in order to reflect the coordinate shift synthesis amount D1 in the design drawing data W1, based on the coordinate shift synthesis amount D1,
A method for manufacturing a photomask, comprising correcting a coordinate system of a drawing device to compensate for the coordinate shift to obtain a corrected coordinate system, and using the corrected coordinate system together with the design drawing data W1 to draw. A method for manufacturing a photomask for manufacturing a display device having a transfer pattern based on design drawing data W1 on a first main surface of a transparent substrate, comprising:
A step of placing a photomask substrate in which a thin film and a resist film are stacked on the first main surface on a stage of a drawing apparatus;
A drawing step of performing drawing on the photomask substrate, and
A step of patterning the thin film using a resist pattern formed by developing the resist film,
The back surface flatness coefficient k1 of the photomask substrate is,
-100nm≤k1≤100nm
When satisfying,
In the above drawing process,
Prepare drawing device specific data M1 indicating the amount of deformation that the drawing device exerts on the shape of the photomask substrate,
The drawing device specific data M1 includes stage flatness data indicating a surface shape of the stage,
A method of manufacturing a photomask, comprising reflecting the coordinate shift amount D2 caused by the drawing device specific data M1 to the design drawing data W1, and drawing a transfer pattern on the photomask substrate. The method for manufacturing a photomask according to any one of claims 1, 2, and 5, wherein the photomask substrate is directly mounted on the surface of the stage. A drawing device for drawing a transfer pattern for manufacturing a display device based on design drawing data W1 on a photomask substrate in which a thin film and a resist film are stacked on a first main surface of a transparent substrate,
A stage on which the photomask substrate is placed,
A drawing means for drawing by irradiating an energy beam for drawing on the photomask substrate in a state placed on the stage;
It is provided with a drawing control system that calculates and controls pattern data used for drawing,
The drawing control system,
Storage means for holding drawing device-specific data M1 indicating an amount of deformation that the drawing device exerts on the shape of the photomask substrate;
Input means for inputting the design drawing data W1 and back surface data S2 indicating a back surface shape of the photomask substrate;
A data control means for controlling the drawing by the drawing means by performing an operation to reflect the coordinate shift synthesis amount D1 caused by the drawing device specific data M1 and the back surface data S2 to the design drawing data W1,
The drawing device specific data M1 includes stage flatness data indicating a surface shape of the stage. The drawing device according to claim 7, wherein the storage means holds the drawing device-specific data M1 as a coordinate deviation correction amount obtained by converting the coordinate deviation amount in the X-axis direction and the Y-axis direction. The drawing device according to claim 7, wherein the storage means holds the drawing device-specific data M1 as a correction coordinate system in which the coordinate system is corrected by converting the coordinate shift amount in the X-axis direction and the Y-axis direction. . A drawing device for drawing a transfer pattern for manufacturing a display device based on design drawing data W1 on a photomask substrate in which a thin film and a resist film are stacked on a first main surface of a transparent substrate,
A stage on which the photomask substrate is placed,
A drawing means for drawing by irradiating an energy beam for drawing on the photomask substrate in a state placed on the stage;
It is provided with a drawing control system that calculates and controls pattern data used for drawing,
The drawing control system,
Storage means for holding drawing device-specific data M1 indicating an amount of deformation that the drawing device exerts on the shape of the photomask substrate;
Input means for inputting the design drawing data W1;
A data control means for performing an operation to reflect the coordinate shift amount D2 due to the drawing device specific data M1 to the design drawing data W1 to control drawing by the drawing means,
The drawing device specific data M1 includes stage flatness data indicating a surface shape of the stage. The drawing apparatus according to any one of claims 7 to 10, wherein the stage has a surface on which the photomask substrate is directly placed. A step of preparing a photomask manufactured by the method for manufacturing a photomask according to any one of claims 1, 2, and 5, and
A method of manufacturing a display device comprising the step of exposing the photomask using an exposure device. A method for inspecting a photomask substrate having a transfer pattern for manufacturing a display device formed on a first main surface of a transparent substrate based on design drawing data W1, the method comprising:
A step of placing the photomask substrate on a stage of an inspection apparatus,
An inspection data acquisition step of measuring the shape of the transfer pattern and obtaining pattern inspection data X1;
A determination step of determining the good or bad of the transfer pattern,
In the above determination process,
Inspection device specific data M2 indicating the amount of deformation that the inspection device exerts on the shape of the photomask substrate;
Prepare back surface data S2 representing the shape of the second main surface of the photomask substrate,
The inspection apparatus specific data M2 includes stage flatness data indicating a surface shape of the stage,
A photomask substrate, characterized in that the determination is made using the coordinate shift synthesis amount D4 caused by the inspection device specific data M2 and the back surface data S2, the pattern inspection data X1, and the design drawing data W1. method of inspection. The method for inspecting a photomask substrate according to claim 13, wherein in the determination step, the determination is performed by reflecting the coordinate shift synthesis amount D4 to the pattern inspection data X1 or the design drawing data W1. . The method of claim 13, wherein when a plane parallel to the main surface of the photomask substrate mounted on the stage of the inspection apparatus is referred to as an XY plane, and an axis perpendicular to the XY plane is referred to as a Z axis,
The coordinate shift synthesis amount D4 is obtained by converting the height variation data H2 in the Z-axis direction by the sum of the inspection device-specific data M2 and the back surface data S2 into a coordinate shift amount in the X-axis direction and the Y-axis direction. A method for inspecting a photomask substrate, characterized in that. A method for inspecting a photomask substrate having a transfer pattern for manufacturing a display device formed on a first main surface of a transparent substrate based on design drawing data W1, the method comprising:
A step of placing the photomask substrate on a stage of an inspection apparatus,
An inspection data acquisition step of measuring the shape of the transfer pattern and obtaining pattern inspection data X1;
A determination step of determining the good or bad of the transfer pattern,
The back surface flatness coefficient k1 of the photomask substrate is,
-100nm≤k1≤100nm
When satisfying,
In the above determination process,
Prepare inspection device specific data M2 indicating the amount of deformation the inspection device exerts on the shape of the photomask substrate,
The inspection apparatus specific data M2 includes stage flatness data indicating a surface shape of the stage,
The method of inspecting a photomask substrate, characterized in that the determination is made using the coordinate shift amount D5 resulting from the inspection device specific data M2, the pattern inspection data X1, and the design drawing data W1. The method of inspecting a photomask substrate according to any one of claims 13 to 16, wherein the photomask substrate is directly mounted on the surface of the stage. An inspection apparatus for a photomask substrate having a transfer pattern for manufacturing a display device formed on a first main surface of a transparent substrate based on design drawing data W1,
A stage on which the photomask substrate is placed,
Measuring means for measuring the shape of the transfer pattern of the photomask substrate in a state mounted on the stage and obtaining pattern inspection data X1;
And a determination means for determining the good or bad of the transfer pattern,
The determination means,
Storage means for holding inspection device-specific data M2 indicating an amount of deformation that the inspection device exerts on the shape of the photomask substrate;
And input means for inputting the design drawing data W1 and back surface data S2 indicating a back surface shape of the photomask substrate,
The inspection apparatus specific data M2 includes stage flatness data indicating a surface shape of the stage,
A photomask substrate, characterized in that the determination is made using the coordinate shift synthesis amount D4 caused by the inspection device specific data M2 and the back surface data S2, the pattern inspection data X1, and the design drawing data W1. Inspection device. The inspection apparatus for a photomask substrate according to claim 18, wherein the determination means makes the determination by reflecting the coordinate shift synthesis amount D4 to the pattern inspection data X1 or the design drawing data W1. . The inspection of a photomask substrate according to claim 18, wherein the storage means holds the inspection device specific data M2 as a coordinate shift correction amount converted into a coordinate shift amount in the X-axis direction and the Y-axis direction. Device. The photomask according to claim 18, wherein the storage means holds the test device-specific data M2 as a correction coordinate system obtained by converting the coordinate shift amount in the X-axis direction and the Y-axis direction to correct the coordinate system. Board inspection device. An inspection apparatus for a photomask substrate having a transfer pattern for manufacturing a display device formed on a first main surface of a transparent substrate based on design drawing data W1,
A stage on which the photomask substrate is placed,
Measuring means for measuring the shape of the transfer pattern of the photomask substrate in a state mounted on the stage and obtaining pattern inspection data X1;
And a determination means for determining the good or bad of the transfer pattern,
The determination means,
Storage means for holding inspection device-specific data M2 indicating an amount of deformation that the inspection device exerts on the shape of the photomask substrate;
And input means for inputting the design drawing data W1,
The inspection apparatus specific data M2 includes stage flatness data indicating a surface shape of the stage,
The inspection apparatus for a photomask substrate, wherein the determination is performed using the coordinate shift amount D5 due to the inspection apparatus specific data M2, the pattern inspection data X1, and the design drawing data W1. The inspection apparatus for a photomask substrate according to any one of claims 18 to 22, wherein the stage has a surface on which the photomask substrate is directly mounted. delete delete

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