KR101473163B1 - Blankmask and Photomask using the Flat Pannel Display - Google Patents

Abstract

The present invention forms a metal film forming a blankmask for FPD so that the metal film has low reflectivity of 8% or less on exposure light of i-line or g-line used in an exposing process in a laminated structure of a rear antireflection layer, a shading layer, a reflection decreasing layer and a reflection preventing layer. Accordingly, the present invention is able to increase pattern precision by preventing reflection exposure light from being transferred to a panel during a transferring process and, especially, to increase pattern precision in a double exposing region. Additionally, the present invention is able to manufacture a blankmask and a photomask for FPD with improved resolution since a micropattern is able to be formed by increasing the pattern precision of the panel according to the transferring process.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a blank mask and a photomask for a flat panel display,

The present invention relates to a blank mask and a photomask for a flat panel display, and more particularly, to a blank mask and a photomask for a flat panel display. More particularly, the present invention relates to a blank mask and a photomask for a flat panel display, And more particularly to a blank mask and a photomask for a flat panel display.

(FPD) device including a semiconductor device, a TFT-LCD (Thin Film Transistor Liquid Crystal Display), an OLED (Organic Light Emitting Diode), and a PDP (Plasma Display Pannel) A pattern is commonly transferred using a photomask manufactured from a blank mask.

In the blank mask, a thin film containing a metal is formed on the main surface of a transparent substrate made of synthetic quartz glass or the like, and a resist film is formed on the thin film. Here, the thin film can be divided into a light-shielding film, an antireflection film, a phase reversing film, a semitransparent film, and a reflection film depending on optical characteristics, and two or more thin films of these thin films may be used in combination.

On the other hand, a photomask for manufacturing an FPD device has a size of 300 mm or more on one side, which is relatively large as compared with a photomask for manufacturing a semiconductor device, and a photomask for manufacturing an FPD device is used in a projection system or an exposure apparatus of a near exposure system. The exposure light used to manufacture the FPD device is mainly obtained from a light source that emits from an ultra-high pressure mercury lamp, and a plurality of light sources including i-line (365 nm), h-line (405 nm) and g- . A plurality of exposing light beams can obtain an exposure intensity three times as much as that of a single wavelength exposure light beam, thereby improving the productivity.

An exposure process for manufacturing an FPD device is performed by using a step and repeat method on an FPD panel having a larger size than a photomask.

FIGS. 1A and 1B are diagrams for explaining an exposure process using a step-and-repeat method.

1A and 1B, the exposure process is performed using a photomask 100a having a metal film pattern including at least a light-shielding film and an antireflection film, and the exposure process is performed using a panel having a larger size than the photomask 100a And repeating a plurality of transfer processes to form a pattern 120 on the substrate 110.

In detail, in the exposure process, the photomask 100a is mounted on an exposure apparatus, for example, a transfer process is preferentially performed on a partial surface A of the panel 110, and the exposure apparatus is moved to the partial surface A ) And the other adjacent partial surface (B). In one transfer pattern 120 formed by such a plurality of transfer processes, overlapping exposure portions 130 and 140 are generated twice or four times by transfer processes.

However, since the metal film pattern of the photomask 100a generally has a reflectance of 10% or more, the portions 110 and 120 (the portions overlapping with each other by the exposure light reflected by the panel 110 and the exposure apparatus 130 The transfer pattern may be formed incorrectly. That is, a part of the exposure light is reflected by the panel in the exposure process, and the reflected exposure light is reflected on the front surface of the photomask pattern 110a and is reflected on the panel, thereby forming a wrong transfer pattern on the panel. In addition, a part of the exposure light is reflected on the back surface of the photomask pattern 110a, and the reflected exposure light is reflected on the exposure apparatus and transferred to the panel, thereby forming a wrong transfer pattern.

Therefore, a problem arises in that the pattern is moved or formed in the portions 130 and 140 to be overlapped and exposed by the reflection of the exposure light, or the pattern is formed smaller or larger than the required size.

The present invention provides a blank mask and a photomask for an FPD capable of improving the transfer pattern accuracy by minimizing the reflectance of a metal film with respect to exposure light.

Further, the present invention provides a blank mask and a photomask for an FPD having a finer pattern due to an improvement in pattern precision and having improved resolution.

A blank mask for a flat panel display (FPD) according to the present invention is provided with a light shielding film and an antireflection film on a transparent substrate, and a reflection attenuation film for absorbing reflected light reflected upon exposure between the light shielding film and the antireflection film.

A rear antireflection film is selectively provided between the transparent substrate and the light-shielding film.

The light shielding film, the antireflection film, the reflection attenuating film, and the rear antireflection film may be formed of a Cr compound such as Cr, CrN, CrO, CrC, CrCO, CrCN, CrON, CrCON or MoSi, MoSiN, MoSiO, MoSiC, MoSiCO, MoSiCN, MoSiON, MoSiCON It is composed of the same MoSi compound,

The above compounds have a content of 10 at% to 80 at% of Cr or MoSi, 0 at% to 70 at% of nitrogen (N), 0 at% to 20 at% of oxygen (O), and 0 at% to 20 at% of carbon (C).

The laminated structure of the antireflection film and the reflection / attenuation film and the rear antireflection film have a surface reflectance of 0.5% to 8% with respect to the exposure wavelength of 436 nm, respectively.

The laminated structure of the antireflection film and the antireflection film and the rear antireflection film each have a reflectance variation (difference in reflectance with respect to each exposure light) of from 365 nm to 436 nm for exposure light of 0.5% to 10%.

The laminated structure of the antireflection film and the reflection / attenuation film and the rear antireflection film have a surface reflectance of 5% to 15% with respect to exposure light of 536 nm, respectively.

The structure in which the light-shielding film, the antireflection film, the reflection attenuation film and the rear antireflection film are laminated has a thickness of 1,000 Å to 2,500 Å.

The light-shielding film, the antireflection film, the reflection attenuation film, and the rear antireflection film each have a thickness of 50 Å to 1,500 Å.

The laminated structure of the light-shielding film, the antireflection film, and the reflection attenuation film, and the light-shielding film, the antireflection film, the reflection attenuation film, and the rear antireflection film have an optical density (OD) of 2.5 to 7.0.

The light-shielding film, the antireflection film, the reflection attenuation film and the rear antireflection film have the form of a single layer film, a multilayer film of two or more layers, or a continuous film.

A photomask having a structure in which the light-shielding film, the antireflection film, and the reflection attenuation film are stacked or the light-shielding film, the antireflection film, the reflection attenuation film, and the rear antireflection film are laminated using the blank mask can be manufactured.

A metal film is formed by a laminated structure of a rear antireflection film, a light blocking film, a reflection reducing film and an antireflection film so that a metal film has a low reflectance deviation of 8% or less with respect to exposure light of i-line to g- Thereby minimizing the transfer of the retroreflective exposure light caused by the metal film to the panel during the exposure process, thereby improving the pattern accuracy and, in particular, improving the pattern accuracy in the overlapping exposure area.

Further, since the precision of the pattern of the panel according to the transfer process can be improved, a finer pattern can be formed, and a blank mask and a photomask for an FPD with improved resolution can be manufactured.

FIGS. 1A and 1B are diagrams for explaining an exposure process using a step-and-repeat method; FIGS.
2 is a sectional view showing a blank mask for an FPD according to a first embodiment of the present invention.
3 is a cross-sectional view illustrating a blank mask for an FPD according to a second embodiment of the present invention.

Hereinafter, the present invention will be described in detail with reference to the drawings, but it should be understood that the present invention is not limited to these embodiments. For example, And is not intended to limit the scope of the invention. Therefore, it will be understood by those skilled in the art that various modifications and other equivalent embodiments may be made by those skilled in the art. Accordingly, the true scope of protection of the present invention should be determined by the technical matters of the claims.

2 is a cross-sectional view showing a blank mask for an FPD (Flat Pannel Display) according to a first embodiment of the present invention.

2, a blank mask 200 according to the present invention includes a metal film 210 provided on a transparent substrate 202 and a photoresist film 214 provided on the metal film 210 . The metal film 210 includes a light shielding film 204, an antireflection film 208 and a reflection attenuating film 206 provided between the light shielding film 204 and the antireflection film 208. The blank mask 200 according to the present invention is a phase inversion blank mask 200 for an FPD including a liquid crystal display (LCD), a plasma display panel (PDP), an OLED and the like.

The transparent substrate 202 is a quadrangular transparent substrate having a side length of 300 mm or more and may be formed of synthetic quartz glass, a soda lime glass substrate, a non-alkali glass substrate, a low thermal expansion glass substrate, or the like.

The light-shielding film 204 serves to shield exposure light so that the exposure light used in the exposure process can not be transferred to a panel part where transferring is not required. The anti-reflection film 208 reflects a part of the exposure light by the panel in the exposure process, and the reflected exposure light is reflected on the front surface of the photomask pattern 110a and is reflected to the panel, Thereby preventing degradation. The reflection attenuating film 206 plays the role of absorbing the exposure light reflected by the panel together with the anti-reflection film 208.

In recent years, as the circuit pattern used in the FPD display has become finer, the improvement of the pattern precision becomes more important. Accordingly, in the exposure process, the light reflected from the light shielding film 204 and the antireflection film 208, Techniques for controlling light are very important.

To this end, the metal film 210 made of the light-shielding film 204, the reflection attenuating film 206 and the anti-reflection film 208 according to the present invention has a surface of 0.5% to 8% with respect to the exposure light of 436 nm And has a reflectance (Front Reflectance). The metal film has a front reflectivity deviation (maximum reflectance value% - minimum reflectance value% for each exposure light) of 0.5% to 10% with respect to the exposure light of i-line (365 nm) to g-line (436 nm). And, the metal film has a front surface reflectance of 5% to 15% with respect to the exposure wavelength of 536 nm in order to solve the problem of recognition of the alignment key for coating the photoresist.

The light shielding film 204, the reflection attenuating film 206, and the antireflection film 208 are each formed of a single layer film to enhance the light shielding function and antireflection function, or in the form of a multilayer film or a continuous film of at least two layers. The reflection attenuating film 206 and the antireflection film 208 may be a single film formed in the form of a continuous film. Here, the continuous film may be formed by a process such as process power, pressure, gas composition, etc. in a state where a plasma is discharged It means that a thin film having a different composition is formed by changing the parameter.

The light shielding film 204, the reflection attenuating film 206 and the antireflection film 208 may be formed of a material selected from the group consisting of Cr, Al, Co, tungsten, molybdenum, vanadium, (Pd), titanium (Ti), platinum (Pt), manganese (Mn), iron (Fe), nickel (Ni), cadmium (Cd), zirconium (Zr), magnesium (Mg) S, Bor, B, Sb, Ta, Ta, Sn, Cu, Y, S, (N), oxygen (O), and carbon (C) is added to the material, or at least one of at least one metal selected from the group consisting of hafnium (Hf), niobium (Nb) .

The metal film 210 including the light shielding film 204, the reflection attenuating film 206 and the antireflection film 208 is made of chromium (Cr), chromium (Cr) such as CrN, CrO, CrC, CrCO, CrCN, CrON, It is preferably formed of a compound. At this time, the light shielding film 204, the reflection attenuating film 206 and the antireflection film 208 are formed to have a chromium (Cr) content of 30 at% to 80 at%, a nitrogen (N) content of 0 at% to 70 at% 20 at%, and carbon (C) at 0 at% to 20 at%. Here, the reflection attenuating film 206 is preferably formed of the same material having a different composition ratio from the antireflection film 208.

Since the light shielding film 204, the reflection attenuating film 206 and the antireflection film 208 constituting the metal film 210 are formed of the same chromium (Cr) compound, the inclination of the cross section at the time of etching of the metal film 210 The content of at least one of chromium (Cr) and nitrogen (N), oxygen (O), and carbon (C) contained in each of the films is controlled to minimize the etch rate of the entire metal film 210 Adjust the etching cross-sectional shape. The metal film 210 including the light shielding film 204, the reflection attenuating film 206 and the anti-reflection film 208 is formed by a sputtering process using a chromium (Cr) target. At this time, in the sputtering process, an inert gas such as argon (Ar) and a reactive gas including at least one of nitrogen (N), carbon (C), and oxygen (O) are selectively used. In the sputtering process, if argon (Ar), nitrogen (N ₂ ), carbon dioxide (CO ₂ ), or methane (CH ₄ ) gas is selectively used, It is preferable that the ratio is 10% to 95%, the nitrogen (N ₂ ) is 0% to 80%, the carbon dioxide (CO ₂ ) is 0% to 20%, and the methane (CH ₄ ) is 0% to 5%.

The metal film 210 may be formed of at least one of nitrogen (N), oxygen (O), carbon (C), and silicon (Si) in molybdenum (Mo), molybdenum A molybdenum silicide (MoSi) compound such as MoSi, MoSiN, MoSiO, MoSiC, MoSiCO, MoSiNO, MoSiCN and MoSiCON, a tantalum compound, molybdenum (Mo) Ta), or molybdenum tantalum silicide (MoTaSi) compound. The light shielding film 204, the reflection attenuating film 206 and the antireflection film 208 are formed of a chromium (Cr) compound, a molybdenum silicide (MoSi) compound A molybdenum tantalum (MoTa) compound or a molybdenum tantalum silicide (MoTaSi) compound containing a tantalum (Ta) compound, molybdenum (Mo) and tantalum (Ta) and a molybdenum Can be formed by laminating them. That is, it is possible to improve the cross-sectional shape of the entire metal film 210 according to the etching by forming the films so that the film disposed on the upper part of the films constituting the metal film 210 serves as an etching mask for the lower film.

The light shielding film 204, the reflection attenuating film 206 and the antireflection film 208 constituting the metal film 210 have the form of a single layer film, a multilayer film or a multilayer continuous film for adjusting the optical density (OD) and reflectance. At this time, each of the films has a thickness of 50 ANGSTROM to 1,500 ANGSTROM, and the total thickness of the metal film 210 is 1,000 ANGSTROM to 2,500 ANGSTROM, preferably 1,100 ANGSTROM to 2,000 ANGSTROM. The metal film 210 preferably has an optical density (OD) of 2.5 to 7.0 and an optical density (OD) of 3.0 to 6.0 in order to minimize the influence of transmission and reflection on the exposure light in the exposure process, As the optical density (OD) is increased, the thickness of the metal film 210 becomes relatively thick in proportion thereto.

3 is a cross-sectional view showing a blank mask for an FPD according to a second embodiment of the present invention.

Referring to FIG. 3, a blank mask 300 according to the present invention includes a metal film 310 provided on a transparent substrate 302. The metal film 310 includes a light shielding film 304, a reflection attenuating film 306, an antireflection film 308 and a rear antireflection film 312 provided between the transparent substrate 302 and the light shielding film 304.

The rear antireflection film 312 is formed of a single layer film or has a form of a multilayer film or a continuous film of at least two layers. The rear antireflection film 312 serves to prevent some of the exposure light from being reflected on the back surface of the metal film of the photomask pattern, and to prevent the reflected exposure light from being reflected on the exposure apparatus and transferred to the panel to degrade the accuracy of the pattern.

The back reflection preventing film 312 according to the present invention has a reflectance of 0.5% to 8% with respect to the exposure light of 436 nm in order to reduce the reflectance. The metal film has a reflectance deviation (maximum reflectance value% - maximum reflectance value% with respect to bragg reflector) of 0.5% to 10% with respect to the exposure light of i-line (365 nm) to g-line (436 nm).

The rear antireflection film 312 may be formed of at least one of chromium (Cr), aluminum (Al), cobalt (Co), tungsten (W), molybdenum (Mo), vanadium (V), palladium The present invention relates to a method of manufacturing a semiconductor device having a structure in which at least one element selected from the group consisting of Pt, Mn, Fe, Ni, Cd, Zr, Mg, Li, (Y), S, In, Sn, Boron, Be, Sodium, Ta, Hafnium, Niobium, Silicon (Si), or further comprises at least one of nitrogen (N), oxygen (O), and carbon (C) in the material.

The rear antireflection film 312 is made of chromium (Cr) and chromium (Cr) such as CrN, CrO, CrC, CrCO, CrCN, CrON and CrCON in the same manner as the light shielding film 304, the reflection attenuating film 306, ) Compound. The rear antireflection film 312 may be formed of a molybdenum silicide (MoSi) compound such as MoSi, MoSiN, MoSiO, MoSiC, MoSiCO, MoSiNO, MoSiCN, MoSiCON, a tantalum compound, molybdenum Ta), or molybdenum tantalum silicide (MoTaSi) compound. In this case, when the rear antireflection film 312 is formed of a chromium compound, the chromium (Cr) content is 30 at% to 80 at%, the nitrogen (N) is 0 at% to 70 at% (C) has a composition ratio of 0at% to 20at%. The rear antireflection film 312 is formed by adjusting the content of at least one of chromium (Cr), nitrogen (N), oxygen (O), and carbon (C) The reflection attenuating film 306 is formed of a material having the same or different composition ratio as the antireflection film 308.

The rear antireflection film 312 is formed by a sputtering process using a chromium target. At this time, an inert gas such as argon (Ar) gas and nitrogen (N), oxygen (O) Is selectively used as a reactive gas. In the sputtering process, if argon (Ar), nitrogen (N ₂ ), carbon dioxide (CO ₂ ), or methane (CH ₄ ) gas is selectively used, It is preferable that the ratio is 10% to 95%, the nitrogen (N ₂ ) is 0% to 80%, the carbon dioxide (CO ₂ ) is 0% to 20%, and the methane (CH ₄ ) is 0% to 5%.

The rear antireflection film 312 is preferably in the form of a single layer film, a multilayer film, or a continuous film having a thickness of 50 ANGSTROM to 1,500 ANGSTROM in order to adjust optical density (OD) and reflectivity. At this time, the total thickness of the metal film 310 including the rear antireflection film 312 is preferably 1,000 Å to 2,500 Å.

The metal film 310 including the rear antireflection film 312, the light shielding film 304, the reflection attenuating film 306 and the antireflection film 308 may be formed in order to minimize the influence of transmission and reflection on the exposure light in the exposure process It is preferable to have an optical density (OD) of 2.5 to 7.0 and an optical density (OD) of 3.0 to 6.0.

In addition, the blank mask and the photomask according to the present invention can further reduce the influence of the exposure light by manufacturing the optical density (OD) of the metal film from about 2.5 to about 7.0, thereby improving the pattern accuracy and forming a finer pattern And the resolution can be improved.

(Example)

Blank mask manufacturing

A blank mask according to the present invention includes a rear antireflection film, a light-shielding film, at least one reflective antireflection film, and an antireflection film sequentially formed on a transparent substrate to form a metal film. In the blank mask according to the present invention, a light-shielding film, at least one layer of a reflection attenuating film and an antireflection film are sequentially formed on a transparent substrate to constitute a metal film. Then, the reflectance of the metal films was measured.

Membrane configuration
Injected gas ratio (%) thickness
(A) OD reflectivity(%) Inactive Reactivity 365 nm 405 nm 436 nm ΔT 536 nm
Example
One Rear antireflection film 20 80
1,398
3.10 10.91
7.42
5.41
5.49
12.3
F
Shielding film 89 11 Reflection attenuating film 19 81 7.12
5.92
5.16
1.96
-
B
Antireflection film 19 81
Example
2
Rear antireflection film 20 80
1,696


5.16

10.77
7.00
4.93
5.84
12.6
F
Shielding film 89 11 Reflection attenuating film 19 81 2.70
3.41
4.80
2.10
- B
Antireflection film 19 81 Example
3
Shielding film 89 11
1,215

3.05
10.50
6.53
4.40
6.10
12.2
F
Reflection attenuating film 19 81 Antireflection film 19 81 40.94 41.95 42.93 1.99 - B Example
4
Shielding film 89 11
1,996

5.46
12.09
8.19
5.87
6.22
12.9
F
Reflection attenuating film 19 81 Antireflection film 19 81 41.43 42.51 43.61 2.18 - B

Example
5
Shielding film 89 11

1,398



3.06

13.04
10.00
7.56
5.48
12.5
F
Reflection attenuating film 1 19 81 Reflection attenuating film 2 70 30 Reflection attenuating film 3 19 81
40.73
41.81
42.71
1.98
-
B Reflection attenuating film 4 70 30 Antireflection film 19 81
Example 6
Rear antireflection film 40 60
1,402
3.09 10.41
6.57
4.98
5.43
12.5
F
Shielding film 35 65 Reflection attenuating film 35 65 6.88
5.24
5.01
1.07
-
B
Antireflection film 40 60
Example
7
Rear antireflection film 40 60
1,432


3.11

10.07
6.33
4.86
5.21
12.4
F
Shielding film 89 11 Reflection attenuating film 35 65 41.16
42.46
43.40
2.24
-
B
Antireflection film 19 81

As shown in Table 1, the metal films according to the present invention were formed by a sputtering method. In the sputtering process, argon (Ar) gas is used as an inert gas, and nitrogen (N), oxygen (C). ≪ / RTI > Examples 1 to 5 were formed from chromium (Cr) compounds such as CrN, CrO, CrC, CrCO, CrCN and CrCON by a sputtering process using a chromium (Cr) target. (Mo) compound such as MoSiO, MoSiC, MoSiON, MoSiCO, MoSiCN, and MoSiCON. In Example 7, the light shielding film and the antireflection film were formed of a chromium (Cr) compound, and the rear antireflection film and the reflection attenuation film were mol (Mo) compound.

The blank mask according to the present invention has front and rear reflectivity deviations of 10% or less with respect to the exposure wavelength of 365 nm to 436 nm by the formation of the reflection attenuating film and has a reflectance of 8% or less with respect to the exposure light of 436 nm, The retroreflectance of the exposure light is minimized. In addition, it has a front reflectance of about 12% with respect to the exposure wavelength of 536 nm, and it is found that there is no problem in recognition of the alignment key for coating the photoresist.

And, as in Examples 3 to 7, a rear antireflection film is required according to a process required to have a back side reflectance of about 40% for a blank mask without a rear antireflection film and to minimize rear side reflection in the exposure process Could know.

As described above, according to the present invention, a metal film constituting a blank mask is formed so as to have a low reflectance deviation of 8% or less with respect to the exposure light of i-line to g-line used in the exposure process as a rear antireflection film, A damping film and an antireflection film.

Accordingly, it is possible to minimize the transfer of the retroreflective exposure light by the metal film during the exposure process to the panel, thereby improving the pattern accuracy, and in particular, the pattern accuracy in the overlapping exposure area can be improved.

Further, since the precision of the pattern of the panel according to the transfer process can be improved, a finer pattern can be formed, and a blank mask and a photomask for an FPD with improved resolution can be manufactured.

While the present invention has been described with reference to the preferred embodiments, the technical scope of the present invention is not limited to the range described in the above embodiments. It will be apparent to those skilled in the art that various changes or modifications can be made to the embodiments described above. It is apparent from the description of the claims that the form of such modification or improvement can be included in the technical scope of the present invention.

200, 300: blank mask
202, 302: transparent substrate
204, and 304:
206, 306: reflection attenuating film
208, 308: antireflection film
210, 310: metal film
312: rear antireflection film
214, 314: photoresist film

Claims (12)

1. A blank mask for an FPD (Flat Pannel Display) having a light-shielding film and an antireflection film on a transparent substrate,
And a rear anti-reflection film for absorbing reflected light reflected from the transparent substrate and the light-shielding film when exposed to light, wherein the rear anti-reflection film is provided between the light-shielding film and the anti-
Wherein the light shielding film, the antireflection film, the reflection attenuating film, and the rear antireflection film comprise the same metal material so as to have the same etching property. The method according to claim 1,
The light-shielding film, the antireflection film, the reflection attenuation film, and the rear antireflection film may be formed of chromium (Cr), aluminum (Al), cobalt (Co), tungsten (W), molybdenum (Mo), vanadium (V) Ti, Pt, Mn, Fe, Ni, Cd, Zr, Mg, Li, Se, ), Copper (Cu), yttrium (Y), sulfur (S), indium (In), tin (Sn), boron (B), beryllium (Be), sodium (Na), tantalum ), Niobium (Nb), and silicon (Si), or further comprises one or more of nitrogen (N), oxygen (O), and carbon (C) Wherein the blank mask for FPD is made of a metal. The method according to claim 1,
The light shielding film, the antireflection film, the reflection attenuation film and the rear antireflection film may be formed of a chromium (Cr) compound, a molybdenum silicide (MoSi) compound containing at least one of nitrogen (N), oxygen (O) Wherein the blanket mask comprises one of a tantalum (Ta) compound, a molybdenum tantalum (MoTa) compound, and a molybdenum tantalum silicide (MoTaSi) compound. The method according to claim 1,
Wherein the light shielding film, the antireflection film, the reflection attenuation film and the rear antireflection film are composed of a Cr compound or MoSi compound containing at least one of nitrogen (N), oxygen (O) and carbon (C) And the carbon (C) has a content of 0at% to 20at%, 0at% to 70at% of nitrogen (N), 0at% to 20at% of oxygen (O), and 0at% to 20at% of carbon (C). The method according to claim 1,
Wherein the laminated structure of the antireflection film and the antireflection film and the rear antireflection film have reflectance deviations (difference in reflectivity with respect to each exposure light) for exposure light of 365 nm to 436 nm of 0.5% to 10% . The method according to claim 1,
Wherein the laminated structure of the antireflection film and the reflection attenuating film and the rear antireflection film have a surface reflectance of 0.5% to 8% with respect to exposure light of 436 nm and a surface reflectance of 5% to 15% with respect to exposure light of 536 nm. Mask. The method according to claim 1,
Wherein the laminated structure of the light-shielding film, the antireflection film, the reflection attenuating film, and the rear antireflection film has a thickness of 1,000 ANGSTROM to 2,500 ANGSTROM. The method according to claim 1,
Wherein the light-shielding film, the antireflection film, the reflection attenuation film, and the rear antireflection film each have a thickness of 50 ANGSTROM to 1,500 ANGSTROM. The method according to claim 1,
Wherein the laminated structure of the light-shielding film, the antireflection film, the reflection attenuating film, and the rear antireflection film has an optical density (OD) of 2.5 to 7.0. The method according to claim 1,
Wherein the light shielding film, the antireflection film, the reflection attenuating film and the rear antireflection film have the form of a single layer film, a multilayer film of two or more layers, or a continuous film. 1. A blank mask for an FPD having a light-shielding film and an antireflection film on a transparent substrate,
And a reflection attenuating film which absorbs reflected light that is reflected upon exposure is provided between the light-shielding film and the antireflection film,
Wherein the light-shielding film, the antireflection film, and the reflective attenuation film comprise the same metal material so as to have the same etching property,
The blank mask for an FPD having an optical density (OD) of 2.5 to 7.0 in the structure in which the light-shielding film, the antireflection film, and the reflection attenuation film are stacked. A photomask for an FPD manufactured using the blank mask for an FPD according to any one of claims 1 to 11.

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