KR20170112163A - Phase shift blankmask, Photomask and method for fabricating of the same for the Flat Panel Display - Google Patents

Abstract

A phase reversal film is formed on at least two or more layers of a multilayer film on a transparent substrate for use in manufacturing a large area FPD product. The phase reversal film has a first layer positioned at the top, The content of oxygen (O) is higher and the content of nitrogen (N) is lower than that of the second layer.
This makes it possible to reduce the reflectance of the surface of the phase reversal film and to prevent deterioration of the pattern formation accuracy due to reflected light and to form the phase reversal film pattern with a steep edge gradient at the edge portion so that the boundary is clear, It is possible to manufacture a large area FPD product having a pattern.

Description

BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a phase shift blank mask for a flat panel display, a photomask and a manufacturing method thereof,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a phase inversion blank mask for a flat panel display (FPD), a photomask and a manufacturing method thereof, and more particularly, And a method of manufacturing the same.

A photolithography process for manufacturing a flat panel display (hereinafter, referred to as FPD) device or a large scale integration (hereinafter referred to as LSI) device is commonly performed using a photomask manufactured from a blank mask And a pattern transfer process.

The blank mask is a thin film including a metal material on the main surface of a transparent substrate made of synthetic quartz glass or the like and a structure in which a resist film is formed on the thin film. The photomask has a form in which the thin film is patterned from such blank mask. The thin film may be divided into a light-shielding film, an antireflection film, a phase reversal film, a semitransparent film, and a reflective film depending on optical characteristics, and two or more thin films of these thin films may be used in combination.

In recent years, the demand for FPD products has become more sophisticated and sophisticated, and the application range of FPD products has been expanding, and it is required to develop excellent manufacturing process technology. That is, as in the case of a highly integrated semiconductor device, the degree of integration of the FPD device is also increased, and the design rule is becoming finer, and a high pattern resolution and high definition technique are required to form a fine pattern.

However, since the FPD device is manufactured by using the equal exposure apparatus, it is almost impossible to narrow it down to the pattern line width of the LSI device. In addition, since the photomask for manufacturing an FPD device is large in size of 300 mm or more on one side and has a variety of sizes, it is not easy to develop a reduction exposure apparatus corresponding thereto.

As a method for improving the precision of a photomask for manufacturing an FPD device, a method of improving the precision of a photomask for manufacturing an FPD device has been proposed in which an exposure light having a wavelength of approximately 180 deg. Is applied to an exposure light of a composite wavelength including i line (365 nm), h line (405 nm) Phase inversion blank masks and photomasks for an FPD having a phase reversal film whose phase is inverted have been developed. The phase reversal film is a thin film in the form of a monolayer film formed of a molybdenum silicide (MoSi) compound or a chromium (Cr) compound, and the thin film formed on the large area substrate is formed in the form of a pattern using wet etching.

However, a phase reversal film containing molybdenum silicide (MoSi) is a material suitable for dry etching, and wet etching is not easy, so that a problem arises in patterning. In addition, in the phase reversal film of chromium (Cr) -type phase reversal film, an isotropic etching occurs during wet etching, whereby the etched surface of the pattern edge portion has a gently inclined shape. The inclination of the edge portion of the pattern generates a difference in phase change amount between the pattern edge portion and the other portion, thereby affecting the transmittance of the phase reversal film pattern and the uniformity of the phase difference. Further, the boundary of the phase reversal film is unclear due to the inclination of the phase reversal film at the edge portion of the pattern, and it is difficult to form a fine pattern.

In addition, in the phase reversal film, since interference waves are formed by the reflected light when the ratio of the exposure light reflected from the surface layer is large in the transfer step, it is difficult to expose a fine wiring pattern, so that a low reflectance characteristic is required for the exposure light.

The present invention provides a phase inversion blank mask for a FPD and a photomask capable of reducing the reflectance of the surface of the phase reversal film and preventing the generation of interference waves due to the incident reflected light, thereby improving the transfer pattern accuracy of the transferred body.

The present invention provides a phase inversion blank mask and a photomask for an FPD in which the thickness of the phase reversal film can be reduced and the edge inclination of the edge portion is steeply formed so that the boundary of the phase reversal film pattern is clear.

The present invention relates to a phase inversion blank mask for an FPD which improves the cross-sectional shape of a phase reversal film pattern and improves the transmittance and phase inversion uniformity of the phase reversal film pattern and improves the pattern precision of the phase reversal film pattern and the transferred body, A photomask is provided.

The present invention relates to a method of manufacturing a phase inversion blank mask for FPD in which a phase reversal film pattern is formed on a transparent substrate for the manufacture of a large area FPD product, comprising the steps of: forming a phase reversal film on at least two or more multi- Wherein the phase reversal film is formed such that the first layer positioned at the top portion has a higher content of oxygen (O) and a lower content of nitrogen (N) than the second layer positioned adjacent to the lower portion of the first layer.

The first layer is formed to have a higher content of oxygen (O) and a lower content of nitrogen (N) than layers located below the first layer.

Wherein the phase reversal film forming step uses at least one of NO, N ₂ O, NO ₂ , O ₂ , N ₂ , CH ₄ , CO ₂ and CO gas in the film forming gas and controls the amount and concentration of the film forming gas (O), nitrogen (N), and carbon (C) contained in the layers.

Each of the films constituting the phase reversal film pattern is formed of one of Cr, CrO, CrN, CrC, CrON CrCN, CrCO, and CrCON films.

Each of the films constituting the phase reversal film is formed of an etchable material with respect to the same etching solution, and has different compositions from each other, and the films of the other composition are laminated one or more times.

The present invention forms a phase reversal film for an FPD in the form of a multilayer or continuous film of two or more layers comprising films of mutually different compositions that can be etched in the same etching solution and films of different compositions are laminated one or more times. Further, the film of the uppermost layer constituting the phase reversal film was formed so that the content of oxygen (O) was higher and the content of nitrogen (N) was lower than that of the film disposed at least adjacent to or below the film.

Thereby, it is possible to provide a phase inversion blank mask for a FPD and a photomask that can prevent the occurrence of interference waves due to reflected incident light by reducing the reflectance of the surface of the phase reversal film, thereby preventing the degradation of the accuracy of the transferred pattern due to reflected light .

In addition, the present invention can reduce the thickness of the phase reversal film and can steeply form the edge section slope so that the boundary of the phase reversal film pattern becomes clear at the time of patterning the phase reversal film, It is possible to provide a phase inversion blank mask and a photomask for FPD which can improve the pattern precision of the phase reversal film pattern and the transferred body as the uniformity can be ensured.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing a phase inversion blank mask according to a first embodiment of the present invention; FIG.
2 is a sectional view showing a phase reversal film according to an embodiment of the present invention;
3 is a cross-sectional view showing a phase reversal film pattern according to an embodiment of the present invention;
4 is a cross-sectional view showing a phase inversion blank mask according to a second embodiment of the present invention.
5 is a sectional view showing a phase inversion blank mask according to a third embodiment of the present invention.
6 to 8 are sectional views showing a phase inversion photomask according to an embodiment of the present invention.

Hereinafter, the present invention will be described in detail with reference to the drawings, but it should be understood that the present invention is not limited to these embodiments. For example, And is not intended to limit the scope of the invention. Therefore, it will be understood by those skilled in the art that various modifications and other equivalent embodiments may be made by those skilled in the art. Accordingly, the true scope of protection of the present invention should be determined by the technical matters of the claims.

Hereinafter, the phase inversion blank mask and the photomask for FPD, which are embodied in the embodiments of the present invention, will be referred to as manufacturing an FPD product including a liquid crystal display (LCD), a plasma display panel (PDP), an organic light emitting diode A phase inversion blank mask and a photomask. Further, the exposure light refers to a composite wavelength including i-line (365 nm), h-line (405 nm), and g-line (436 nm).

FIG. 1 is a cross-sectional view showing a phase inversion blank mask according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view showing a phase inversion film according to an embodiment of the present invention.

1, a phase inversion blank mask 100 according to an embodiment of the present invention includes a transparent substrate 102 and a phase reversal film 104 and a resist film 108 sequentially stacked on the transparent substrate 102 .

The transparent substrate 102 is a quadrangular transparent substrate having a side of 300 mm or more on one side, and may be a synthetic quartz glass, a soda lime glass substrate, a non-alkali glass substrate, a low thermal expansion glass substrate, or the like.

Referring to FIG. 2, the phase reversal film 104 has a structure in which at least two thin films 104a to 104n are stacked, preferably a thin film of two to ten layers, And thin films of two to eight layers are stacked.

The thin films 104a, ..., 104n have the form of a continuous film or a multilayer film, and each thin film 104a, ... 104n has the form of a single film or a continuous film. Here, the continuous film refers to a film formed by changing process parameters such as reactive gas, power, pressure, and the like in a state that the plasma is turned on during the sputtering process.

Each of the thin films 104a to 104n constituting the phase reversal film 104 is made of a material which has different compositions but is etchable with respect to the same etching solution and has a different etching rate as the composition is different, The thin films 104a, ..., 104n of different compositions are stacked at least once.

The phase reversal film 104 has a total thickness of 500 ANGSTROM to 1,500 ANGSTROM and each of the thin films 104a to 104n has a thickness of 50 ANGSTROM to 1,450 ANGSTROM. The thickness of each of the thin films 104a to 104n may be, for example, the same or different from each other, and may gradually increase or decrease from the transparent substrate 102 to the upper portion, And may be variously implemented depending on required characteristics such as etching and optical characteristics.

The thin films 104a to 104n constituting the phase reversal film 104 are formed of a material such as Al, Co, ), Pd, Ti, Pt, Mn, Fe, Ni, Cd, Zr, Mg, (Li), Se, Cu, Y, S, In, Sn, Boron, Be, Sodium, (N), oxygen (O), carbon (C), or the like, is added to the material, the material being formed of a compound containing at least one of Ta, Ta, Hf, Nb, Material. ≪ / RTI >

The thin films 104a to 104n are preferably formed of a chromium (Cr) compound and consist of one of Cr, CrO, CrN, CrC, CrON CrCN, CrCO, CrCON films. For this purpose, thin films (104a, ... 104n) is _{N 2, NO, N 2 O} , NO 2, O 2, C x H y (x, y is a natural number), CO _2, at least one of CO gas Gas sputtering process.

The phase reversal film 104 has a surface reflectance of 20% or less, preferably 15% or less, and more preferably 10% or less, for exposure light of a composite wavelength including i-line to g-line . Further, the phase reversal film 104 has a reflectance variation of 10% or less, preferably 5% or less, with respect to exposure light of a composite wavelength including i-line to g-line.

The phase reversal film 104 is formed on the surface of the thin films 104a to 104n so as not to make it difficult to form a fine transfer pattern on the resist film due to an interference wave caused by reflected light in an exposure process for forming a pattern or a transfer process to a flat panel, The reflectance with respect to the exposure light can be adjusted by changing the content of oxygen (O) contained in the substrate.

It is preferable that the thin films 104a to 104n are formed such that the edge inclination of the edge portions of the phase reversal film pattern is made steep at the time of patterning. For this purpose, the nitrogen contained in the thin films 104a to 104n The etching rate of the thin film can be controlled by changing the content of oxygen (N), oxygen (O) and carbon (C).

Herein, the oxygen (O) contained in the thin films 104a to 104n may have a higher reflectance as the content of the oxygen (O) is relatively higher, and the etching rate may be faster as the content of nitrogen (N) is greater.

Therefore, the phase reversal film 104 is formed on the surface of each of the thin films 104a, ..., 104n in such a manner that the contents of oxygen (O) and nitrogen (N) The surface reflectance of the phase reversal film 104 and the cross-sectional shape of the phase reversal film pattern can be adjusted.

The phase reversal film 104 has the highest oxygen (O) content, the lowest nitrogen (N) content, and the lowest part of the uppermost thin film 104a among the thin films 104a, ..., The content of oxygen (O) is lowered and the content of nitrogen (N) is increased, so that the reflectivity of the phase reversal film 104 is lowered and the cross-sectional shape of the phase reversal film pattern can be steeply formed.

In addition, the content of oxygen (O) is increased and the content of nitrogen (N) is decreased in the order of the uppermost thin film 104a, the third thin film 104c and the second thin film 104b, , The cross-sectional shape of the pattern can be steeply formed by appropriately adjusting the thickness of the thin films. Then, the content of oxygen (O) is increased and the content of nitrogen (N) is decreased in the order of the third thin film 104c, the top thin film 104a and the second thin film 104b, , The cross-sectional shape can be steeply formed by appropriately adjusting the thickness of the thin films.

In addition, when the thin films 104a to 104n simultaneously contain oxygen (O) and nitrogen (N), the oxygen (O) and nitrogen (N) The inclusion of the inclusion content does not necessarily have to be reversed. That is, when the content of oxygen (O) contained in one thin film is high, it is not always necessary to reduce the content of nitrogen (N).

The thin films 104a to 104n need not always contain oxygen (O) and nitrogen (N) but may be thin films for controlling the reflectance and controlling the etching rate, for example, the topmost film 104a (O) and nitrogen (N) for the purpose of reducing the reflectance and improving the cross-sectional tilt in thin films of a certain portion of the thin films or portions of the thin films.

The reflectance and etch rate of the thin films 104a to 104n with respect to the exposure light vary depending on the content of nitrogen N. This is because oxygen (O) and nitrogen (N) injected during the film- And the concentration of the reactive gas is controlled. The reactive gas containing oxygen (O) and nitrogen (N) in the reactive gas may be any gas including oxygen (O) and nitrogen (N), for example, a gas containing oxygen Wherein at least one of NO, N ₂ O, NO ₂ , O ₂ , CO ₂ and CO gas is used and at least one of NO, N ₂ O, NO ₂ and N ₂ gas .

In addition, the thin films 104a to 104n constituting the phase reversal film 104 may further include carbon (C) for controlling the etching rate. As the content of carbon (C) is relatively higher, the etching rate of the thin films (104a, ..., 104n) can be lowered. The reactive gas containing carbon (C) may be any gas including carbon (C), for example, C _x H _y (where x and y are natural numbers), particularly CH ₄ , CO ₂ , and CO.

The phase reversal film 104 has a phase difference of 160 ° to 200 ° with respect to the exposure light of a composite wavelength including i-line to g-line. This is because the exposure light transmitted through the phase reversal film 104 and the transparent substrate 102 Quot; exposure light " The phase reversal film 104 has a retardation deviation of 50 DEG or less, preferably 20 DEG or less, with respect to the exposure light.

The phase reversal film 104 has a transmittance of 1% to 40%, preferably 1% to 15%, with respect to exposure light of a composite wavelength including i-line to g-line, Preferably, the transmittance deviation is 5% or less.

Here, the above-mentioned deviation refers to the difference between the maximum value and the minimum value of the items showing the optical characteristics with respect to the exposure light of the composite wavelength including the i-line to the g-line.

As described above, the present invention can prevent the reduction of the precision of the transferred pattern due to the reflected light during the formation of the phase reversal film pattern and the transfer process to the object through the phase reversal film pattern by reducing the reflectance of the surface of the phase reversal film.

In addition, since the etch rate of the phase reversal film 104 can be controlled and the thickness thereof can be reduced, the edge inclination of the edge portion is steeply formed so that the boundary of the phase reversal film pattern becomes clear at the time of patterning the phase reversal film 104 Thus, a finer transfer pattern can be formed. 3 showing a phase reversal film pattern according to an embodiment of the present invention, a horizontal distance (tail size: d) between an upper edge and a lower edge of the phase reversal film pattern 104p is 100 nm or less , Which is 60 nm or less. The upper surface and the edge surface of each of the thin film patterns constituting the upper surface and the edge surface of the phase reversal film pattern 104p or the phase reversal film pattern 104p are formed at an angle of 70 ° to 110 °, To 100 [deg.].

The phase inversion blank mask according to the present invention may further include a functional film provided on the top or bottom of the phase reversal film.

FIG. 4 is a cross-sectional view showing a phase inversion blank mask according to a second embodiment of the present invention, and FIG. 5 is a cross-sectional view showing a phase inversion blank mask according to a third embodiment of the present invention.

Referring to FIGS. 4 and 5, the phase shift blank mask 200 of the present invention includes a functional film 106 provided on the top or bottom of the phase reversal film 104.

Here, the phase reversal film 104 has a multilayer structure of two or more layers structurally similar to the phase reversal film of the first embodiment described above, and has the same optical, physical, and chemical characteristics.

The functional film 106 may be a light-shielding film, and the light-shielding film may include a single film having both a function of shielding light and a function of preventing reflection, or a light-shielding film and an antireflection film having the same composition and composition or different constitution . In addition, the light shielding film may be composed of a multilayer film of two or more layers having a reflectance and an etching rate controlled in the form of a phase reversal film so as to have a low reflectance and a vertical pattern shape.

The light shielding film 106 may be formed of a material such as chromium (Cr), aluminum (Al), cobalt (Co), tungsten (W), molybdenum (Mo), vanadium (V), palladium (Pd) (Pt), Mn, Fe, Ni, Cd, Zr, Mg, Li, Selenium, Cu, (Y), sulfur (S), indium (In), tin (Sn), boron (B), beryllium (Be), sodium (Na), tantalum (Ta), hafnium (Hf), niobium (Si), or may further include at least one of nitrogen (N), oxygen (O), and carbon (C) in the materials.

The light shielding film 106 may be formed of a material that is etched by the same etching solution as that of the phase reversal film 104, or may be formed to have an etching selectivity ratio. The light shielding film 106 and the phase reversing film 30 can be patterned and removed preferably by a wet etching process, and the etching material and the etching method can use various conventionally known materials and methods.

The light shielding film 106 has a thickness of 1,500 ANGSTROM or less, preferably 800 ANGSTROM or less, more preferably 500 ANGSTROM or less.

The phase reversal film 104 and the light shielding film 106 can be formed by a chemical vapor deposition method, a physical vapor deposition method including sputtering, an electron beam evaporation method, a laser deposition method, an ALD method, In particular, it is preferable that the film is formed by the sputtering method.

In addition, the functional film is one of the films necessary for the transfer pattern, including the semitransmissive film, the etching stopper film, and the hard mask film in addition to the light shielding film, and the functional films may be included in the transfer pattern. For example, when the functional film is an etch stop film, the etch stop film may be provided between the transparent substrate and the phase reversal film, the phase reversal film and the light shield film, the light shield film, and the transparent substrate in consideration of the etch selectivity.

The phase reversal photomask can be formed using the blank mask according to the present invention described above.

6 to 8 are cross-sectional views showing a phase-reversal photomask according to an embodiment of the present invention.

Referring to FIGS. 1 and 6, a phase inversion photomask 300 according to the present invention has a structure in which only a phase reversal film pattern 104p is formed on a transparent substrate 102. FIG.

The photomask 300 is formed by sequentially forming a phase reversal film and a resist film on the transparent substrate 102, patterning the resist film to form a resist pattern, etching the phase reversal film with the resist pattern as an etching mask, (104p). ≪ / RTI >

7, the phase reversal photomask 300 according to the present invention includes a light shielding film pattern 106p in a blind region of a transparent substrate 102 and a phase reversal film pattern 104p in a main region Structure. At this time, when forming the light shielding film pattern 106p, an auxiliary pattern such as an alignment key may be formed in the light shielding film pattern 106p of the blind area. Here, although not shown, the phase reversal film pattern 104p may be formed so as to contact or cover the light-shielding film pattern 106p.

The photomask 300 is formed by forming a light shielding film and a resist film on a transparent substrate 102, forming a resist film pattern, etching the light shielding film with the resist film pattern as an etching mask, . Subsequently, a phase reversal film is formed on the transparent substrate 102a including the light-shielding film pattern 106p, a resist film pattern is formed on the phase reversal film, and then the phase reversal film is etched to form a phase reversal film pattern 104p And the like.

Referring to FIGS. 4 and 8, a phase inversion photomask 300 according to the present invention includes a phase reversal film pattern 104p on a transparent substrate 102, The light shielding film pattern 106p may be formed on the pattern 104p.

The photomask 300 sequentially forms a phase reversal film, a light shielding film, and a resist film on the transparent substrate 102, forms a resist pattern by patterning the resist film, forms a light shielding film and a phase reversal film And a phase reversal film pattern 104p and a light blocking film pattern are formed by etching. Then, the resist film pattern is formed again, and the light shielding film is patterned by using the resist film pattern as an etching mask to form a light shielding film pattern 106p in the blind area.

Further, although not shown, the light shielding film pattern may be formed on the upper and lower portions of the phase reversal film pattern of the main region, or may be formed below the phase reversal film pattern of the blind region.

As described above, the present invention can reduce the surface reflectance of the phase reversal film by controlling the content of at least one of oxygen (O), nitrogen (N) and carbon (C) in the thin films constituting the phase reversal film, It is possible to prevent deterioration of the pattern formation accuracy due to the reflected light during the formation or transferring process to the object. Further, by controlling the content of at least one of oxygen (O), nitrogen (N), and carbon (C), the etch rate of the thin films constituting the phase reversal film can be controlled and the thickness can be reduced, The edge inclination of the edge portion is steeply formed so that a more precise and fine pattern can be formed.

(Example)

Multilayer Phase reversal film  Blank mask formation

In order to evaluate the phase inversion blank mask according to the embodiment of the present invention, a phase reversal film composed of a multilayer of two to eight layers was formed on a transparent substrate. In an embodiment of the present invention, a blank mask provided with only a phase reversal film is formed and evaluated, but a blind region or a structure in which a shielding film is provided in a part of the blind region and the main region can be realized.

1 and 6, a multi-layered phase reversal film according to embodiments of the present invention is formed by one of CrO, CrN, CrC, CrON CrCN, CrCO, and CrCON films by a sputtering method using a Cr target. Respectively. At this time, argon (Ar) gas is used as an inert gas in the sputtering process, and at least one of NO, N ₂ O, NO ₂ , O ₂ , N ₂ , CH ₄ , CO ₂ , .

In the embodiment of the present invention, in order to control the reflectance of the phase reversal film and the inclination of the end face of the phase reversal film pattern, the flow rate of gas including oxygen (O), nitrogen (N) The reflectivity and etch rate of the films constituting the phase reversal film were controlled by controlling the concentration. If the amount of oxygen (O) contained in each film constituting the phase reversal film is relatively large, the reflectance can be reduced. If the amount of nitrogen (N) is relatively large, the etching rate can be increased.

Here, the flow rate and concentration of nitrogen (N 2) can be N ₂ gas as the main gas, and at least one of NO, N ₂ O, and NO ₂ gas can be used as the auxiliary gas. The flow rate and concentration of oxygen (O) can be at least one of O ₂ and CO ₂ gas as the main gas, and at least one of NO, N ₂ O, NO ₂ , and CO gas can be used as the auxiliary gas have. In the case of carbon (C), one or more gases of CH ₄ , CO ₂ and CO can be used.

For example, the phase reversal film has the highest oxygen (O) content, lowest nitrogen (N) content, and oxygen (N) content in the first layer film as the uppermost film from the lower films among the films constituting the phase reversal film. O) content was low and the content of nitrogen (N) was increased, the surface reflectance of the phase reversal film and the etching rate of each film were controlled. It is also possible to increase the oxygen (O) content and the nitrogen (N) content in the order of the uppermost thin film 104a, the third thin film 104c and the second thin film 104b, , And the second layer film in the order of increasing oxygen (O) content and lowering the nitrogen (N) content were controlled in the order of the surface reflectance of the phase reversal film and the etch rate of each film.

In addition to the gas containing oxygen (O) and nitrogen (N), at least one of nitrogen (N), oxygen (O), and carbon (C) may be added for controlling the reflectance and etch rate of the phase reversal film. Gas was injected to form a phase reversal film.

The phase reversal film was formed to a thickness of about 1,350 Å in total and each film was formed to a thickness of about 50 Å to 1,300 Å in consideration of reflectance and etching rate depending on the contents of nitrogen (N), oxygen (O), and carbon (C) .

≪ 2-layer phase reversal film & Ar
(%) N2 gas
(%) Gas containing oxygen (O) (%) reflectivity(%)
@ 365 nm Tail Size
(nm) 1st floor (top floor) 18.8 71.9 9.4 - - Second floor 14.9 79.6 5.5 - - Total - - - 16.8 35

≪ 3-layer phase reversal film & Ar
(%) N2 gas
(%) Gas containing oxygen (O) (%) reflectivity(%)
@ 365 nm Tail Size
(nm) 1st floor (top floor) 17.1 74.3 8.6 - - Second floor 21.4 71.4 7.1 - - 3rd Floor 14.0 83.7 2.3 - - Total - - - 14.9 36

≪ Four-layered phase reversal film & Ar
(%) N2 gas
(%) Gas containing oxygen (O) (%) reflectivity(%)
@ 365 nm Tail Size
(nm) 1st floor (top floor) 15.0 75.0 10.0 - - Second floor 17.6 73.5 8.8 - - 3rd Floor 17.6 76.5 5.9 - - 4th floor 14.3 83.3 2.4 - - Total - - - 14.3 28

≪ 5-layer phase reversal film & Ar
(%) Nitrogen (N) included
gas (%) Gas containing oxygen (O) (%) reflectivity(%)
@ 365 nm Tail Size
(nm) 1st floor (top floor) 17.6 64.7 17.6 - - Second floor 18.1 69.3 12.7 - - 3rd Floor 18.2 72.7 9.1 - - 4th floor 18.1 75.3 6.6 - - 5th floor 16.2 81.1 2.7 - - ToTal - - - 14.1 23

≪ 5-layer phase reversal film & Ar
(%) Nitrogen (N) included
gas (%) Gas containing oxygen (O) (%) reflectivity(%)
@ 365 nm Tail Size
(nm) 1st floor (top floor) 17.6 64.7 17.6 - - Second floor 18.1 70.7 11.2 - - 3rd Floor 18.1 68.8 13.1 - - 4th floor 18.1 75.3 6.6 - - 5th floor 16.2 81.1 2.7 - - ToTal - - - 14.3 27

≪ 6-layer phase reversal film & Ar
(%) N2 gas
(%) Gas containing oxygen (O) (%) reflectivity(%)
@ 365 nm Tail Size
(nm) 1st floor (top floor) 16.7 61.1 22.2 - - Second floor 18.2 66.7 15.2 - - 3rd Floor 15.3 74.0 10.7 - - 4th floor 14.9 76.7 8.4 - - 5th floor 14.5 79.7 5.8 - - 6th floor 14.2 82.5 3.3 - - ToTal - - - 18.2 31

≪ 8-layer phase reversal film & Ar
(%) N2 gas
(%) Gas containing oxygen (O) (%) reflectivity(%)
@ 365 nm Tail Size
(nm) 1st floor (top floor 17.1 68.6 14.3 - - Second floor 16.9 70.6 12.4 - - 3rd Floor 17.0 72.7 10.2 - - 4th floor 16.9 74.7 8.4 - - 5th floor 16.6 76.2 7.2 - - 6th floor 16.4 78.1 5.5 - - 7th floor 15.5 80.3 4.1 - - 8th floor 13.9 83.3 2.8 - - Total - - - 14.8 27

Referring to Tables 1 to 7, according to the embodiment of the present invention, a phase reversal film composed of a multilayer film of two to eight layers was formed under conditions satisfying all requirements for transmittance, phase angle and the like.

The phase reversal films according to the above embodiments have a surface reflectance of 14.1% to 18.2%, so that it is possible to prevent the occurrence of interference waves due to the reflected light incident upon the reduction of the reflectance, thereby preventing the degradation of the accuracy of the transferred pattern due to the reflected light Respectively.

Further, in the present invention, after a resist film pattern is formed on each phase reversal film, the phase reversal film is etched using the resist film as an etching mask to form a phase reversal film pattern, and its cross sectional shape is evaluated.

As a result, a horizontal distance (tail size) between the upper edge and the lower edge of each of the phase reversal film patterns was 23 nm to 36 nm, and thus the slope of the phase reversal film pattern was very excellent. Thus, the transmittance of the phase reversal film pattern, It is possible to improve the pattern accuracy of the phase reversal film pattern and the transferred body.

While the present invention has been described with reference to the preferred embodiments, the technical scope of the present invention is not limited to the range described in the above embodiments. It will be apparent to those skilled in the art that various changes or modifications can be made to the embodiments described above. It is apparent from the description of the claims that the form of such modification or improvement can be included in the technical scope of the present invention.

102: transparent substrate 104: phase reversal film
106: light shielding film 108: resist film

Claims (24)

A method for producing a phase inversion blank mask for a flat panel display (FPD) in which a phase reversal film pattern is formed on a transparent substrate,
And forming a phase reversal film on the transparent substrate with at least two or more multilayer films,
Wherein the phase reversal film is formed so that the first layer located at the uppermost position is formed to have a higher content of oxygen (O) and a lower content of nitrogen (N) than the second layer positioned adjacent to the lower portion of the first layer, A method of manufacturing a mask. The method according to claim 1,
Wherein the second layer is formed so that the content of oxygen (O) is lower and the content of nitrogen (N) is higher than the third layer located in contact with the lower portion of the second layer. The method for producing a phase reversal blank mask for FPD . The method according to claim 1,
Wherein the first layer is formed to have a higher content of oxygen (O) and a lower content of nitrogen (N) than the layers located below the first layer. The method according to claim 1,
Wherein a layer lower than the first layer is formed so that the content of oxygen (O) is higher and the content of nitrogen (N) is lower as the layer is closer to the first layer. The method according to claim 1,
Wherein at least one of the layers formed below the first layer is formed so that the content of one of oxygen (O) and nitrogen (N) is higher or lower than that of the first layer. A method of manufacturing a blank mask. 6. The method according to any one of claims 1 to 5,
The phase reversal film forming process uses at least one of NO, N ₂ O, NO ₂ , O ₂ , N ₂ , CO ₂ and CO gas in the film forming gas, Wherein the content of oxygen (O) and nitrogen (N) contained in the phase inversion blank mask is adjusted. The method according to claim 1,
Wherein the phase reversal film is formed to further include carbon (C). 8. The method of claim 7,
In the phase reversal film forming process including the carbon (C), at least one of CH ₄ , CO ₂ , and CO gas in the film forming gas is used, and the amount and concentration of the film forming gas are adjusted so that carbon C) of the phase shift mask is adjusted. The method according to claim 1,
Wherein the phase reversal film is formed to have a surface reflectance of 20% or less with respect to exposure light of a composite wavelength including i-line to g-line. The method according to claim 1,
Wherein the phase reversal film pattern is formed of one of Cr, CrO, CrN, CrC, CrON CrCN, CrCO, and CrCON films. The method according to claim 1,
Wherein each of the films constituting the phase reversal film is formed of an etchable material with respect to the same etching solution and has mutually different compositions, and the films of the different compositions are formed by laminating one or more times each other. ≪ / RTI > The method according to claim 1,
Wherein each of the films constituting the phase reversal film is formed to have a slow etching rate with respect to the same etching solution toward the first layer. The method according to claim 1,
Wherein at least one layer of each of the layers constituting the phase reversal film is formed so as to have a slow etching rate with respect to the same etchant solution than the layer formed at the top or bottom thereof. The method according to claim 1,
Wherein the phase reversal film is formed to have a phase difference of 160 ° to 200 ° with respect to exposure light of a composite wavelength including i-line to g-line. The method according to claim 1,
Wherein the phase reversal film is formed so as to have a retardation deviation of 50 DEG or less with respect to exposure light of a composite wavelength including i-line to g-line. The method according to claim 1,
Wherein the phase reversal film is formed to have a transmittance of 1% to 40% with respect to exposure light of a composite wavelength including i-line to g-line. The method according to claim 1,
Wherein the phase reversal film is formed to have a transmittance deviation of 10% or less with respect to exposure light of a composite wavelength including i-line to g-line. The method according to claim 1,
Wherein the phase reversal film is formed to have a thickness of 500 ANGSTROM to 1,500 ANGSTROM. The method according to claim 1,
Wherein each of the films constituting the phase reversal film has a thickness of 50 ANGSTROM to 1,450 ANGSTROM. The method according to claim 1,
Wherein the phase reversal film is in the form of a continuous film or a multilayer film, and the films constituting the phase reversal film pattern are formed in the form of a single film or a continuous film. The method according to claim 1,
Wherein at least one of a light shielding film, a semitransmissive film, an etching stopper film, and a hard mask film including a light shielding film and an antireflection film is further formed on the upper or lower portion of the phase reversal film pattern. Gt; A phase inversion blank mask for an FPD formed by the method of manufacturing a phase inversion blank mask for an FPD according to any one of claims 1 to 21. A phase inversion photomask for an FPD formed using a blank mask produced by the method for manufacturing a phase inversion blank mask for an FPD according to any one of claims 1 to 21. 24. The method of claim 23,
Wherein the phase reversal film pattern formed using the phase reversal film has a horizontal distance between an upper edge and a lower edge of 100 nm or less.

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