KR102093532B1 - 전자·전기 기기용 구리 합금, 전자·전기 기기용 구리 합금 박판, 전자·전기 기기용 도전 부품 및 단자 - Google Patents
전자·전기 기기용 구리 합금, 전자·전기 기기용 구리 합금 박판, 전자·전기 기기용 도전 부품 및 단자 Download PDFInfo
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- 229910000881 Cu alloy Inorganic materials 0.000 title claims abstract description 147
- 229910052742 iron Inorganic materials 0.000 claims abstract description 78
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 74
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 32
- 239000010949 copper Substances 0.000 claims abstract description 27
- 229910052718 tin Inorganic materials 0.000 claims abstract description 24
- 239000012535 impurity Substances 0.000 claims abstract description 12
- 239000013078 crystal Substances 0.000 claims description 57
- 238000005259 measurement Methods 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 27
- 238000001887 electron backscatter diffraction Methods 0.000 claims description 23
- 229910052725 zinc Inorganic materials 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 238000007747 plating Methods 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 186
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 179
- 239000011135 tin Substances 0.000 description 72
- 239000002244 precipitate Substances 0.000 description 53
- 238000010438 heat treatment Methods 0.000 description 49
- 239000000956 alloy Substances 0.000 description 48
- 229910045601 alloy Inorganic materials 0.000 description 47
- 238000005452 bending Methods 0.000 description 37
- 239000011701 zinc Substances 0.000 description 34
- 238000005096 rolling process Methods 0.000 description 22
- 230000007423 decrease Effects 0.000 description 20
- 230000000694 effects Effects 0.000 description 17
- 238000011156 evaluation Methods 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 14
- 239000002994 raw material Substances 0.000 description 12
- 238000012360 testing method Methods 0.000 description 12
- 238000005097 cold rolling Methods 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 229910007610 Zn—Sn Inorganic materials 0.000 description 10
- 238000012545 processing Methods 0.000 description 10
- 239000006104 solid solution Substances 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 238000010894 electron beam technology Methods 0.000 description 8
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 238000005498 polishing Methods 0.000 description 8
- 230000001105 regulatory effect Effects 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910017518 Cu Zn Inorganic materials 0.000 description 6
- 229910017752 Cu-Zn Inorganic materials 0.000 description 6
- 229910017943 Cu—Zn Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 6
- 238000005098 hot rolling Methods 0.000 description 6
- 238000001953 recrystallisation Methods 0.000 description 6
- 229910018104 Ni-P Inorganic materials 0.000 description 5
- 229910018536 Ni—P Inorganic materials 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000005266 casting Methods 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 230000014509 gene expression Effects 0.000 description 4
- 238000000265 homogenisation Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000001556 precipitation Methods 0.000 description 4
- 238000010791 quenching Methods 0.000 description 4
- 230000000171 quenching effect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000008119 colloidal silica Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000005242 forging Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000010998 test method Methods 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000009749 continuous casting Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000007405 data analysis Methods 0.000 description 2
- 238000013480 data collection Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 238000009864 tensile test Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- -1 (Co) Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 239000013058 crude material Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 239000008207 working material Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/026—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/04—Alloys based on copper with zinc as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Conductive Materials (AREA)
- Non-Insulated Conductors (AREA)
Abstract
Description
Claims (10)
- Zn 을 2 mass% 초과하여 23 mass% 미만, Sn 을 0.1 mass% 이상 0.9 mass% 이하, Ni 를 0.05 mass% 이상 1.0 mass% 미만, Fe 를 0.001 mass% 이상 0.10 mass% 미만, P 를 0.005 mass% 이상 0.1 mass% 이하 함유하고, 잔부가 Cu 및 불가피적 불순물로 이루어지고,
Fe 의 함유량과 Ni 의 함유량의 비 Fe/Ni 가, 원자비로,
0.002 ≤ Fe/Ni < 1.5 를 만족하고,
또한, Ni 및 Fe 의 합계 함유량 (Ni+Fe) 과 P 의 함유량의 비 (Ni+Fe)/P 가, 원자비로,
3 < (Ni+Fe)/P < 15 를 만족하고,
또한, Sn 의 함유량과 Ni 및 Fe 의 합계량 (Ni+Fe) 의 비 Sn/(Ni+Fe) 가, 원자비로,
0.3 < Sn/(Ni+Fe) < 5 를 만족함과 함께,
Cu, Zn 및 Sn 을 함유하는 α 상을, EBSD 법에 의해 1000 ㎛2 이상의 측정 면적을 측정 간격 0.1 ㎛ 스텝으로 측정하여, 데이터 해석 소프트 OIM 에 의해 해석된 CI 값이 0.1 이하인 측정점을 제외하여 해석하고, 인접하는 측정간의 방위차가 15° 를 초과하는 측정점간을 결정립계로 하고, 모든 결정립계 길이 L 에 대한 Σ3, Σ9, Σ27a, Σ27b 의 각 입계 길이의 합 Lσ 의 비율인 특수 입계 길이 비율 (Lσ/L) 이 10 % 이상인 것을 특징으로 하는 전자·전기 기기용 구리 합금. - Zn 을 2 mass% 초과하여 23 mass% 미만, Sn 을 0.1 mass% 이상 0.9 mass% 이하, Ni 를 0.05 mass% 이상 1.0 mass% 미만, Fe 를 0.001 mass% 이상 0.10 mass% 미만, Co 를 0.001 mass% 이상 0.1 mass% 미만, P 를 0.005 mass% 이상 0.1 mass% 이하 함유하고, 잔부가 Cu 및 불가피적 불순물로 이루어지고,
Fe 와 Co 의 합계 함유량과 Ni 의 함유량의 비 (Fe+Co)/Ni 가, 원자비로,
0.002 ≤ (Fe+Co)/Ni < 1.5 를 만족하고,
또한 Ni, Fe 및 Co 의 합계 함유량 (Ni+Fe+Co) 과 P 의 함유량의 비 (Ni+Fe+Co)/P 가, 원자비로,
3 < (Ni+Fe+Co)/P < 15 를 만족하고,
또한 Sn 의 함유량과 Ni, Fe 및 Co 의 합계 함유량 (Ni+Fe+Co) 의 비 Sn/(Ni+Fe+Co) 가, 원자비로,
0.3 < Sn/(Ni+Fe+Co) < 5 를 만족하고,
Cu, Zn 및 Sn 을 함유하는 α 상을, EBSD 법에 의해 1000 ㎛2 이상의 측정 면적을 측정 간격 0.1 ㎛ 스텝으로 측정하여, 데이터 해석 소프트 OIM 에 의해 해석된 CI 값이 0.1 이하인 측정점을 제외하여 해석하고, 인접하는 측정간의 방위차가 15° 를 초과하는 측정점간을 결정립계로 하고, 모든 결정립계 길이 L 에 대한 Σ3, Σ9, Σ27a, Σ27b 의 각 입계 길이의 합 Lσ 의 비율인 특수 입계 길이 비율 (Lσ/L) 이 10 % 이상인 것을 특징으로 하는 전자·전기 기기용 구리 합금. - 제 1 항 또는 제 2 항에 있어서,
Cu, Zn 및 Sn 을 함유하는 α 상의 평균 결정 입경 (쌍정 (雙晶) 을 포함한다) 이 0.5 ㎛ 이상 10 ㎛ 이하의 범위 내로 되어 있는 것을 특징으로 하는 전자·전기 기기용 구리 합금. - 제 1 항 또는 제 2 항에 있어서,
0.2 % 내력이 300 ㎫ 이상의 기계 특성을 갖는 것을 특징으로 하는 전자·전기 기기용 구리 합금. - 제 1 항 또는 제 2 항에 기재된 전자·전기 기기용 구리 합금의 압연재로 이루어지고, 두께가 0.05 ㎜ 이상 1.0 ㎜ 이하의 범위 내에 있는 것을 특징으로 하는 전자·전기 기기용 구리 합금 박판.
- 제 5 항에 있어서,
표면에 Sn 도금이 실시되어 있는 것을 특징으로 하는 전자·전기 기기용 구리 합금 박판. - 제 1 항 또는 제 2 항에 기재된 전자·전기 기기용 구리 합금으로 이루어지는 것을 특징으로 하는 전자·전기 기기용 도전 부품.
- 제 1 항 또는 제 2 항에 기재된 전자·전기 기기용 구리 합금으로 이루어지는 것을 특징으로 하는 단자.
- 제 5 항에 기재된 전자·전기 기기용 구리 합금 박판으로 이루어지는 것을 특징으로 하는 전자·전기 기기용 도전 부품.
- 제 5 항에 기재된 전자·전기 기기용 구리 합금 박판으로 이루어지는 것을 특징으로 하는 단자.
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JP2013055076A JP5501495B1 (ja) | 2013-03-18 | 2013-03-18 | 電子・電気機器用銅合金、電子・電気機器用銅合金薄板、電子・電気機器用導電部品及び端子 |
JPJP-P-2013-055076 | 2013-03-18 | ||
PCT/JP2013/073213 WO2014147862A1 (ja) | 2013-03-18 | 2013-08-29 | 電子・電気機器用銅合金、電子・電気機器用銅合金薄板、電子・電気機器用導電部品及び端子 |
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KR20150129780A KR20150129780A (ko) | 2015-11-20 |
KR102093532B1 true KR102093532B1 (ko) | 2020-03-25 |
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US (1) | US20160111179A1 (ko) |
EP (1) | EP2977475B1 (ko) |
JP (1) | JP5501495B1 (ko) |
KR (1) | KR102093532B1 (ko) |
CN (1) | CN105189793A (ko) |
TW (1) | TWI486464B (ko) |
WO (1) | WO2014147862A1 (ko) |
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JP7014211B2 (ja) | 2019-09-27 | 2022-02-01 | 三菱マテリアル株式会社 | 電子・電気機器用銅合金、電子・電気機器用銅合金板条材、電子・電気機器用部品、端子、及び、バスバー |
US11634314B1 (en) | 2022-11-17 | 2023-04-25 | Sharkninja Operating Llc | Dosing accuracy |
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2013
- 2013-03-18 JP JP2013055076A patent/JP5501495B1/ja active Active
- 2013-08-29 US US14/777,669 patent/US20160111179A1/en not_active Abandoned
- 2013-08-29 KR KR1020157027653A patent/KR102093532B1/ko active Active
- 2013-08-29 WO PCT/JP2013/073213 patent/WO2014147862A1/ja active Application Filing
- 2013-08-29 CN CN201380074769.1A patent/CN105189793A/zh active Pending
- 2013-08-29 EP EP13878640.5A patent/EP2977475B1/en active Active
- 2013-08-30 TW TW102131290A patent/TWI486464B/zh active
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JP2005060773A (ja) | 2003-08-12 | 2005-03-10 | Mitsui Mining & Smelting Co Ltd | 特殊黄銅及びその特殊黄銅の高力化方法 |
US20090101243A1 (en) | 2006-05-26 | 2009-04-23 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Copper Alloy Having High Strength, High Electric Conductivity and Excellent Bending Workability |
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JP2012158829A (ja) | 2011-01-13 | 2012-08-23 | Mitsubishi Materials Corp | 電子・電気機器用銅合金、銅合金薄板および導電部材 |
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WO2014147862A1 (ja) | 2014-09-25 |
EP2977475B1 (en) | 2018-10-10 |
US20160111179A1 (en) | 2016-04-21 |
JP5501495B1 (ja) | 2014-05-21 |
KR20150129780A (ko) | 2015-11-20 |
JP2014181363A (ja) | 2014-09-29 |
TW201437392A (zh) | 2014-10-01 |
CN105189793A (zh) | 2015-12-23 |
EP2977475A4 (en) | 2016-12-28 |
TWI486464B (zh) | 2015-06-01 |
EP2977475A1 (en) | 2016-01-27 |
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