KR101886824B1 - 동박, 동장 적층판, 가요성 회로기판 및 동장 적층판의 제조방법 - Google Patents
동박, 동장 적층판, 가요성 회로기판 및 동장 적층판의 제조방법 Download PDFInfo
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 402
- 239000011889 copper foil Substances 0.000 title claims abstract description 275
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000010949 copper Substances 0.000 claims abstract description 125
- 229910052802 copper Inorganic materials 0.000 claims abstract description 117
- 238000005452 bending Methods 0.000 claims abstract description 94
- 239000012535 impurity Substances 0.000 claims abstract description 31
- 239000013078 crystal Substances 0.000 claims abstract description 30
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 21
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 21
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 19
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 18
- 229910052777 Praseodymium Inorganic materials 0.000 claims abstract description 18
- 229910052772 Samarium Inorganic materials 0.000 claims abstract description 16
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 16
- 229910052692 Dysprosium Inorganic materials 0.000 claims abstract description 15
- 229910052691 Erbium Inorganic materials 0.000 claims abstract description 15
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 15
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 15
- 229910052689 Holmium Inorganic materials 0.000 claims abstract description 15
- 229920005989 resin Polymers 0.000 claims description 93
- 239000011347 resin Substances 0.000 claims description 93
- 229920001721 polyimide Polymers 0.000 claims description 72
- 239000004642 Polyimide Substances 0.000 claims description 58
- 238000000034 method Methods 0.000 claims description 55
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 35
- 229910052760 oxygen Inorganic materials 0.000 claims description 35
- 239000001301 oxygen Substances 0.000 claims description 35
- 238000010438 heat treatment Methods 0.000 claims description 31
- 229920005575 poly(amic acid) Polymers 0.000 claims description 23
- 229910052782 aluminium Inorganic materials 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 17
- 229910052775 Thulium Inorganic materials 0.000 claims description 13
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 13
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 9
- 230000003252 repetitive effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 127
- 238000012360 testing method Methods 0.000 description 82
- 229910045601 alloy Inorganic materials 0.000 description 41
- 239000000956 alloy Substances 0.000 description 41
- 238000005275 alloying Methods 0.000 description 29
- 239000010936 titanium Substances 0.000 description 29
- 239000000243 solution Substances 0.000 description 27
- 230000015572 biosynthetic process Effects 0.000 description 25
- 238000005096 rolling process Methods 0.000 description 25
- 238000001953 recrystallisation Methods 0.000 description 23
- 230000000694 effects Effects 0.000 description 21
- 239000000463 material Substances 0.000 description 19
- 239000011575 calcium Substances 0.000 description 17
- 239000011888 foil Substances 0.000 description 17
- 238000004458 analytical method Methods 0.000 description 12
- 230000010354 integration Effects 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- 229920006259 thermoplastic polyimide Polymers 0.000 description 12
- 238000005266 casting Methods 0.000 description 11
- 238000005530 etching Methods 0.000 description 11
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 229910052717 sulfur Inorganic materials 0.000 description 10
- 239000011593 sulfur Substances 0.000 description 10
- 239000002994 raw material Substances 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 229910002804 graphite Inorganic materials 0.000 description 8
- 239000010439 graphite Substances 0.000 description 8
- 238000003786 synthesis reaction Methods 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 239000012790 adhesive layer Substances 0.000 description 7
- 238000003475 lamination Methods 0.000 description 7
- 229910052748 manganese Inorganic materials 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 6
- 239000005751 Copper oxide Substances 0.000 description 6
- 239000004952 Polyamide Substances 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 229910000431 copper oxide Inorganic materials 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 229920002647 polyamide Polymers 0.000 description 6
- 229910052761 rare earth metal Inorganic materials 0.000 description 6
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 238000005097 cold rolling Methods 0.000 description 5
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 239000012300 argon atmosphere Substances 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 229910000765 intermetallic Inorganic materials 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000005098 hot rolling Methods 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000006104 solid solution Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000005482 strain hardening Methods 0.000 description 3
- 238000005728 strengthening Methods 0.000 description 3
- 238000012916 structural analysis Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
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- 239000000178 monomer Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005554 pickling Methods 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- XUSNPFGLKGCWGN-UHFFFAOYSA-N 3-[4-(3-aminopropyl)piperazin-1-yl]propan-1-amine Chemical compound NCCCN1CCN(CCCN)CC1 XUSNPFGLKGCWGN-UHFFFAOYSA-N 0.000 description 1
- QYIMZXITLDTULQ-UHFFFAOYSA-N 4-(4-amino-2-methylphenyl)-3-methylaniline Chemical group CC1=CC(N)=CC=C1C1=CC=C(N)C=C1C QYIMZXITLDTULQ-UHFFFAOYSA-N 0.000 description 1
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910018565 CuAl Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910001122 Mischmetal Inorganic materials 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 229920001646 UPILEX Polymers 0.000 description 1
- 238000005162 X-ray Laue diffraction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000009661 fatigue test Methods 0.000 description 1
- 238000000445 field-emission scanning electron microscopy Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002602 lanthanoids Chemical group 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
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- 230000002035 prolonged effect Effects 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
- B32B15/088—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising polyamides
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/01—Alloys based on copper with aluminium as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/05—Alloys based on copper with manganese as the next major constituent
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0393—Flexible materials
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
Description
도 2는 가요성 회로기판을 굴곡시킨 상태를 나타내는 단면 설명도이다.
도 3은 MIT 굴곡시험장치의 설명도이다.
도 4(a)는 IPC 굴곡시험장치의 설명도이고, 도 4(b)는 IPC 굴곡시험에 이용한 시험용 가요성 회로기판의 X-X' 단면도이다.
도 5는 편면(片面) 동장 적층판의 사시 설명도이다.
2: 배선(금속박)
3: 커넥터 단자
6: 접착층
7: 커버재
8: 갭 길이
9: 고정부
10: 슬라이드 가동부
21: 단면(P)의 법선방향
L: 능선
P: 굴곡부에 있어서의 능선으로부터 두께방향으로 잘랐을 때의 배선의 단면
Claims (19)
- Mn을 0.001질량% 이상 0.4질량% 이하 함유하고, 불가피 불순물로서 0.1질량% 미만의 산소와 잔부 동(Cu)을 가진 동박으로서, 동의 단위격자의 기본 결정축 <100>이 상기 동박의 두께방향과 박면 내에 존재하는 어느 한 방향의 2개의 직교축에 대해 각각 방위차 15° 이내의 우선 배향영역이 면적률로 60% 이상을 차지하는 것을 특징으로 하는 동박.
- 제1항에 있어서,
Mn을 0.001질량% 이상 0.1질량% 이하 함유함과 함께, 0.005질량% 이상 0.2질량% 이하의 Ti 또는 0.005질량% 이상 2질량% 이하의 Al 중 적어도 어느 한쪽을 함유하는 것을 특징으로 하는 동박. - 제1항에 있어서,
Mn을 0.06질량% 이하 함유하는 동박. - Ca, La, Ce, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb 및 Y로 이루어지는 군에서 선택된 적어도 1종의 원소를 0.005질량% 이상 0.4질량% 이하 함유하고, 잔부 동(Cu)을 함유하는 동박이며, 동의 단위격자의 기본 결정축 <100>이 동박의 두께방향과 박면 내에 존재하는 어느 한 방향의 2개의 직교축에 대해 각각 방위차 15° 이내의 우선 배향영역이 면적률로 60% 이상을 차지하는 것을 특징으로 하는 동박.
- 제4항에 있어서,
0.005질량% 이상 0.2질량% 이하의 Ti 또는 0.005질량% 이상 0.395질량% 이하의 Al 중 적어도 어느 한쪽을 더 함유하는 것을 특징으로 하는 동박. - 제4항에 있어서,
산소의 함유량이 0.1질량% 미만인 동박. - 제1항 또는 제4항에 기재된 동박으로 이루어지는 동박층과 이에 적층된 수지층을 가지는 것을 특징으로 하는 동장 적층판.
- 제7항에 있어서,
동박층의 두께가 5㎛ 이상 18㎛ 이하이고, 수지층의 두께가 5㎛ 이상 75㎛ 이하인 동장 적층판. - 제7항에 있어서,
수지층이 폴리이미드로 이루어지는 동장 적층판. - 제7항에 기재된 동장 적층판의 동박층을 에칭해서 소정의 배선을 형성하고, 상기 배선의 적어도 한 개소에 굴곡부를 형성해서 사용하는 것을 특징으로 하는 가요성 회로기판.
- 제10항에 있어서,
접동(摺動) 굴곡, 절곡 굴곡, 힌지 굴곡 및 슬라이드 굴곡으로 이루어지는 군에서 선택된 어느 하나의 반복 동작을 수반하는 굴곡부가 형성되도록 사용되는 가요성 회로기판. - 제10항에 기재된 가요성 회로기판을 탑재한 전자기기.
- 동박층과 수지층을 가진 동장 적층판의 제조방법으로서, Mn을 0.001질량% 이상 0.1질량% 이하 함유하고, 불가피 불순물로서 0.1질량% 미만의 산소와 잔부 동(Cu)을 조성에 가진 냉간압연 동박의 표면에 대해, 폴리아미드산 용액을 도포해서 가열 처리하거나 또는 폴리이미드 필름을 포개서 열압착함으로써 냉간압연 동박 상에 폴리이미드로 이루어지는 수지층을 형성함과 함께 냉간압연 동박을 재결정화하여, 동의 단위격자의 기본 결정축 <100>이 상기 동박의 두께방향과 박면 내에 존재하는 어느 한 방향의 2개의 직교축에 대해 각각 방위차 15° 이내의 우선 배향영역을 면적률로 60% 이상 차지하는 동박층으로 하는 것을 특징으로 하는 동장 적층판의 제조방법.
- 제13항에 있어서,
냉간압연 동박이 0.005질량% 이상 0.2질량% 이하의 Ti 또는 0.005질량% 이상 2질량% 이하의 Al 중 적어도 어느 한쪽을 더 함유하는 동장 적층판의 제조방법. - 제13항에 있어서,
냉간압연 동박이 0.06질량% 이하의 Mn을 함유하는 동장 적층판의 제조방법. - 동박층과 수지층을 가진 동장 적층판의 제조방법으로서, Ca, La, Ce, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb 및 Y로 이루어지는 군에서 선택된 적어도 1종의 원소를 0.005질량% 이상 0.4질량% 이하 함유하고, 잔부 동(Cu)을 함유하는 냉간압연 동박의 표면에 대해, 폴리아미드산 용액을 도포해서 가열 처리하거나 또는 폴리이미드 필름을 포개서 열압착함으로써 냉간압연 동박 상에 폴리이미드로 이루어지는 수지층을 형성함과 함께 냉간압연 동박을 재결정화하여, 동의 단위격자의 기본 결정축 <100>이 상기 동박의 두께방향과 박면 내에 존재하는 어느 한 방향의 2개의 직교축에 대해 각각 방위차 15° 이내의 우선 배향영역을 면적률로 60% 이상 차지하는 동박층으로 하는 것을 특징으로 하는 동장 적층판의 제조방법.
- 제16항에 있어서,
냉간압연 동박이 0.005질량% 이상 0.2질량% 이하의 Ti 또는 0.005질량% 이상 0.395질량% 이하의 Al 중 적어도 어느 한쪽을 함유하는 동장 적층판의 제조방법. - 제13항 또는 제16항에 있어서,
도포한 폴리아미드산 용액을 가열 처리해서 수지층을 형성하는 온도가 280℃ 이상 400℃ 이하인 동장 적층판의 제조방법. - 제13항 또는 제16항에 있어서,
폴리이미드 필름을 열압착해서 수지층을 형성하는 온도가 280℃ 이상 400℃ 이하인 동장 적층판의 제조방법.
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