KR101823685B1 - 성장기판, 반도체 소자 및 그 제조방법 - Google Patents
성장기판, 반도체 소자 및 그 제조방법 Download PDFInfo
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- KR101823685B1 KR101823685B1 KR1020110079881A KR20110079881A KR101823685B1 KR 101823685 B1 KR101823685 B1 KR 101823685B1 KR 1020110079881 A KR1020110079881 A KR 1020110079881A KR 20110079881 A KR20110079881 A KR 20110079881A KR 101823685 B1 KR101823685 B1 KR 101823685B1
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- 239000000758 substrate Substances 0.000 title claims abstract description 83
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- 229910002601 GaN Inorganic materials 0.000 claims abstract description 123
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 111
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 239000010703 silicon Substances 0.000 claims abstract description 45
- 229910002704 AlGaN Inorganic materials 0.000 claims description 43
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 38
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- 239000010409 thin film Substances 0.000 description 13
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- 239000001257 hydrogen Substances 0.000 description 7
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 7
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- 125000004429 atom Chemical group 0.000 description 6
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- 239000011247 coating layer Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
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- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
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- 229910052703 rhodium Inorganic materials 0.000 description 2
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- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 206010017577 Gait disturbance Diseases 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 229910019897 RuOx Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
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- 238000010894 electron beam technology Methods 0.000 description 1
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- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
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- 239000000155 melt Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
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- 239000002096 quantum dot Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
도 2는 도 1의 버퍼층과 확산 방지층의 부분 확대도이다.
도 3 내지 도 9는 실시 예에 따른 질화물 반도체 소자의 제조 방법을 나타낸 도면이다.
도 10은 도 1의 질화물 반도체 소자의 다른 예를 나타낸 도면이다.
도 11은 도 10의 반도체 소자를 갖는 발광 소자 패키지를 나타낸 도면이다.
도 12 내지 도 14는 도 11의 발광 소자 패키지를 갖는 라이트 유닛을 나타낸 도면이다.
115,119,123: 질화갈륨계 반도체층 117,121: 크랙방지층
120: 크랙방지 구조층
Claims (18)
- 실리콘 기판;
상기 실리콘 기판 위에 버퍼층;
상기 버퍼층 위에 제1언도프트 GaN층;
상기 제1언도프트 GaN층 위에 AlN을 포함하는 제1질화 알루미늄계 반도체층, 상기 제1질화 알루미늄계 반도체층 위에 제1 AlGaN계 반도체층, 및 상기 제1 AlGaN계 반도체층 위에 AlN을 포함하는 제2질화 알루미늄계 반도체층을 포함하는 제1크랙 방지층;
상기 제1크랙 방지층 위에 제2언도프트 GaN층;
상기 제2언도프트 GaN층 위에 제3질화 알루미늄계 반도체층, 상기 제3질화 알루미늄계 반도체층 위에 제2 AlGaN계 반도체층, 및 상기 제2 AlGaN계 반도체층 위에 제4질화 알루미늄계 반도체층을 포함하는 제2크랙 방지층; 및
상기 제2크랙 방지층 위에 제3질화갈륨계 반도체층을 포함하고,
상기 제1언도프트 GaN층 및 상기 제1크랙 방지층과 상기 제2언도프트 GaN층 및 상기 제2크랙 방지층은 각각 페어로 형성되어 2 내지 10주기로 반복되는 성장용 기판. - 제1항에 있어서, 상기 버퍼층은 AlN을 포함하는 성장용 기판.
- 삭제
- 삭제
- 삭제
- 제1항 또는 제2항에 있어서, 상기 버퍼층의 두께는 30nm~200nm 범위를 포함하고,
상기 제1질화 알루미늄계 반도체층 및 상기 제2질화 알루미늄계 반도체층 각각의 두께는 상기 제1AlGaN계 반도체층의 두께보다 얇거나, 3nm~5nm 범위를 포함하는 성장용 기판. - 삭제
- 제1항 또는 제2항에 있어서, 상기 제1 AlGaN계 반도체층과 상기 제2 AlGaN계 반도체층은 10~20nm의 두께를 포함하고,
상기 제1 AlGaN계 반도체층과 상기 제2 AlGaN계 반도체층의 알루미늄 함량은 20~60%인 성장용 기판. - 삭제
- 제1항 또는 제2항에 있어서, 상기 제1크랙 방지층과 상기 제2크랙 방지층의 두께는 10~30nm인 성장용 기판.
- 제1항 또는 제2항 중 어느 한 항의 성장용 기판; 및
상기 성장용 기판 상에 반도체 구조물을 더 포함하는 반도체 소자. - 삭제
- 삭제
- 삭제
- 실리콘 기판 상에 버퍼층을 형성하는 단계;
상기 버퍼층 상에 제1언도프트 GaN층을 형성하는 단계;
상기 제1언도프트 GaN층 위에, 제1질화 알루미늄계 반도체층, 상기 제1질화 알루미늄계 반도체층 위에 제1 AlGaN계 반도체층, 및 상기 제1 AlGaN계 반도체층 위에 제2질화 알루미늄계 반도체층을 포함하는 제1크랙 방지층을 형성하는 단계;
상기 제1크랙 방지층 위에 제2언도프트 GaN층을 형성하는 단계;
상기 제2언도프트 GaN층 위에 제3질화 알루미늄계 반도체층, 상기 제3질화 알루미늄계 반도체층 위에 제2 AlGaN계 반도체층, 및 상기 제2 AlGaN계 반도체층 위에 제4질화 알루미늄계 반도체층을 포함하는 제2크랙 방지층을 형성하는 단계; 및
상기 제2크랙 방지층 위에 제3질화갈륨계 반도체층을 형성하는 단계를 포함하고,
상기 제1언도프트 GaN층 및 상기 제1크랙 방지층과 상기 제2언도프트 GaN층 및 상기 제2크랙 방지층은 각각 페어로 형성되어 2 내지 10주기로 반복되는 성장용 기판의 제조방법.
- 삭제
- 삭제
- 삭제
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KR1020110079881A KR101823685B1 (ko) | 2011-08-10 | 2011-08-10 | 성장기판, 반도체 소자 및 그 제조방법 |
US13/562,613 US9029911B2 (en) | 2011-08-10 | 2012-07-31 | Light emitting device |
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KR1020110079881A KR101823685B1 (ko) | 2011-08-10 | 2011-08-10 | 성장기판, 반도체 소자 및 그 제조방법 |
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WO2016209015A1 (ko) * | 2015-06-25 | 2016-12-29 | 엘지이노텍 주식회사 | 자외선 발광소자, 발광소자 패키지 및 조명장치 |
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JP2009158804A (ja) * | 2007-12-27 | 2009-07-16 | Dowa Electronics Materials Co Ltd | 半導体材料、半導体材料の製造方法及び半導体素子 |
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