KR101816164B1 - Solar cell module - Google Patents

Abstract

In an embodiment of the present invention, a plurality of solar cells having a first electrode and a second electrode disposed on a rear surface of a semiconductor substrate and linearly arranged so that neighboring ends of the solar cells overlap each other, A plurality of conductive wirings selectively connected to the first electrode and the second electrode and a plurality of conductive wirings selectively connected to only the first electrode of the first solar cell included in the plurality of solar cells, And the other of which is connected to a plurality of conductive wirings selectively connected to only the second electrode of the second solar cell overlapping with the first solar cell.

Description

Solar cell module {SOLAR CELL MODULE}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell module in which a rear contact type solar cell is overlaid and modularized.

Recently, as energy resources such as oil and coal are expected to be depleted, interest in alternative energy to replace them is increasing, and solar cells that produce electric energy from solar energy are attracting attention.

Typical solar cells are made up of semiconductors that form p-n junctions of different conductivity types, such as p-type and n-type, and electrodes that are connected to semiconductor units of different conductivity types, respectively. This type of solar cell uses solar cell modules made by connecting several sheets to generate power and power. In this specification, a solar cell module refers to a form in which a plurality of solar cells are electrically connected by physical means.

A common method of modularization to connect multiple solar cells is to use solder-coated copper ribbon. The copper ribbon is bonded to a bus bar for charge collection provided in each solar cell to connect a plurality of neighboring solar cells.

However, since the copper ribbon has a wider width than the bus bar, the area covered by the copper ribbon is so large that the power generation efficiency of the solar cell is deteriorated.

One of the ways to solve this problem is to construct a solar cell module using a rear-contact solar cell in which the electrodes collecting charge are all located on the backside.

In the rear contact type solar cell, since the electrodes are all located on the rear surface of the substrate, the problem of blocking the incident surface due to the bus bar can be alleviated.

However, in the case of the rear contact type solar cell, since all the electrodes are located on the rear surface of the substrate, interference occurs between the bus bars and the electrodes when connecting several solar cells using the bus bar, thereby causing wiring problems.

In addition, when a module is constructed with a rear contact type solar cell, adjacent solar cells are exposed, and there is a problem that the design is deteriorated due to the structure of the components disposed on the rear surface of the exposed module.

Disclosure of Invention Technical Problem [8] The present invention has been made in view of the above technical background, and it is an object of the present invention to solve the wiring problem between the bus bar and the electrodes while preventing the solar cell spaces from being visible when the rear contact solar cell is modularized.

In an embodiment of the present invention, a plurality of solar cells having a first electrode and a second electrode disposed on a rear surface of a semiconductor substrate and linearly arranged so that neighboring ends of the solar cells overlap each other, A plurality of conductive wirings selectively connected to the first electrode and the second electrode and a plurality of conductive wirings selectively connected to only the first electrode of the first solar cell included in the plurality of solar cells, And the other of which is connected to a plurality of conductive wirings selectively connected to only the second electrode of the second solar cell overlapping with the first solar cell.

The interconnector may be positioned on the front surface of the first solar cell while covering the end portion of the first solar cell overlapping the second solar cell.

An insulating material may be disposed between the interconnector and the end.

The interconnector may be connected to a plurality of conductive wirings selectively connected to the second electrode at a rear surface of an end portion of the second solar cell overlapping the first solar cell.

A plurality of conductive wirings selectively connected to the second electrode of the second solar cell may be connected to each other by a connector at an opposite end of the end portion where the interconnector is disposed.

The connector is preferably shielded by the opposite end.

And a plurality of conductive wirings selectively connected to only the second electrode of the second solar cell are bonded to the connector by solder.

An interconnector connected to the first electrode of the first solar cell and a connector connected to the second electrode of the second solar cell may be disposed at an end portion where the first solar cell and the second solar cell overlap each other.

An interconnector connected to the first electrode of the first solar cell may extend to the front surface of the first solar cell to surround the end of the first solar cell and may be connected to a connector connected to the second electrode of the second solar cell.

The interconnector may include a pad portion having one surface to which the plurality of conductive wirings are bonded and an insulating portion coated with an insulating material.

The pad portion may be patterned such that only the conductive wires are bonded.

The pad portion and the insulating portion may be formed on the opposite surface of the one side of the interconnector.

The plurality of conductive wirings connected to the first electrode and the second electrode may be bonded to the pad portion by solder.

According to an embodiment of the present invention, it is possible to connect the electrodes of the rear contact type solar cell to the conductive wirings and connect the interconnector to the conductive wirings to easily modularize the rear contact type solar cell.

Also, in the configured solar cell module, two neighboring solar cells are overlapped at the ends, so that the wiring structures connecting the neighboring solar cells can be simply hidden.

1 shows a simplified plan view of a solar cell module according to an embodiment of the present invention.
FIG. 2 shows a simplified cross-sectional view taken along the line AA 'in FIG.
Figs. 3 to 6 illustrate an example of the inter connecter.
7 is a schematic cross-sectional view of a rear contact type solar cell used in the present invention.
8 schematically shows a relationship in which a conductive wiring for connecting a rear contact type solar cell to a neighboring solar cell is selectively connected to the first and second electrodes, respectively.
FIG. 9 shows a simplified cross-sectional view taken along line BB 'of FIG. 8. FIG.
10 schematically shows an interconnector for physically and electrically connecting the overlapped solar cells to a conductive wiring.
11 and 12 show an example of a connector.
13 to 15 are schematic views for explaining a process of modularizing the solar cell module of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and similar parts are denoted by like reference characters throughout the specification.

In the drawings, the thickness is enlarged to clearly represent the layers and regions. When a layer, film, region, plate, or the like is referred to as being "on" another portion, it includes not only the case directly above another portion but also the case where there is another portion in between. Conversely, when a part is "directly over" another part, it means that there is no other part in the middle. Further, when a certain portion is formed as "whole" on another portion, it means not only that it is formed on the entire surface of the other portion but also that it is not formed on the edge portion.

Hereinafter, the front surface may be one surface of the semiconductor substrate to which the direct light is incident, and the rear surface may be the opposite surface of the semiconductor substrate in which direct light is not incident, or reflected light other than direct light may be incident.

In addition, for convenience of explanation, the drawings may be modified and modified arbitrarily without following the actual scale.

FIG. 1 shows a simplified plan view of a solar cell module according to an embodiment of the present invention, and FIG. 2 shows a simplified sectional view taken along line A-A 'of FIG.

Referring to these figures, according to an embodiment of the present invention, a solar cell module 10 includes a plurality of solar cells C1 to C3 arranged in a linear manner, It is electrically connected to neighboring state.

The solar cells C1 to C3 used in this embodiment are pseudo squared solar cells each having four vertexes tapered. The solar cells are stacked so that the tapered surfaces PS are overlapped with each other. do. Preferably, the overlaid area is in a preferred form and is preferably superimposed so that the tapered surface PS is partially visible, as it is desirable to minimize the area of coverage of the power generation area, i.e. the incident surface through which light enters, Alternatively, the tapered surface PS may be superposed so as not to be seen.

Each of the solar cells C1 to C3 has a rear contact type structure as described later, and the p-type electrode and the n-type electrode arranged on the rear side are selectively connected by the conductive wiring 200. [ At both ends of the conductive wiring 200, a connector CN is disposed adjacent to an end SE of the solar cell.

The connector CN includes a p-type connector CN and an n-type connector CN according to the conductive wiring 200 to be connected. The p-type connector CN connects a plurality of p-type conductive wirings selectively connected only to the p-type electrode, and the n-type connector CN connects a plurality of n-type conductive wirings selectively connected only to the n-type electrode.

The n-type connector (cnN) and the p-type connector (cnP) are divided into two opposing ends of the solar cells (C1 to C3), and a plurality of n-type conductive wirings (200) and a plurality of p- Respectively.

In FIG. 2, the same conductive wiring is shown connected to the n-type connector cnN and the p-type connector cnP for convenience of explanation, but actually connected to other conductive wirings.

The solar cell module 10 of the present invention is arranged so that the end portion SE of the solar cell overlaps with the neighboring portion of the solar cell, so that the n-type connector cnN and the p-type connector cnP disposed adjacent to each other also overlap each other.

2, the n-type connector cnN is disposed at the left end portion SEL of each of the solar cells C1 to C3 and the p-type connector cnP is disposed at the right end portion SER .

On the other hand, the left end portion SEL of the second solar cell C2 overlaps with the right end portion SER of the first solar cell C1. Accordingly. The p-type connector cnP located at the right end portion SER of the first solar cell C1 and the n-type connector cnN disposed at the left end portion SEL of the second solar cell C2 are overlapped.

Likewise, the p-type connector cnP disposed at the right end portion SER of the second solar cell C2 is located at a position overlapping with the n-type connector cnN disposed at the left end portion SEL of the third solar cell C3 do.

The interconnector (IC) electrically connects the p-type connector (cnP) and the n-type connector (cnN) of the two solar cells arranged in this overlapping manner.

One end of the interconnector (IC) is connected to the p-type connector (cnP) of the solar cell and the other end is connected to the n-type connector (cnN) of another solar cell overlapping the end portion SE of the solar cell .

In one preferred form, the interconnector (IC) is integrally formed with a p-type connector (cnP), and can be connected to an n-type connector (cnN) of another neighboring solar cell while simultaneously connecting a plurality of p- have.

Examples of interconnectors (ICs) are illustrated in Figs. 3-6. In these drawings, the interconnector (IC) is illustrated as having a thin rectangular shape, but the shape is not limited thereto.

Referring to these figures, an interconnector (IC) is a thin, rectangular shape that is well warped and is made of a thin metal such as copper.

Alternatively, the interconnector (IC) may be a thin copper foil, such as foil, coated with an insulating material, except at the point of contact with the conductive wiring 200.

As shown in FIG. 3, one surface of the interconnector (IC) is provided with a pad portion (PD) physically and electrically connected to the conductive wiring 200, (ID) made by coating.

The conductive wiring 200 is attached to the pad portion PD by a conventional method, and is bonded using a conventional means such as an adhesive, a film or a tape including the conductive solder.

As shown in FIG. 4, the other side of the IC includes an insulating portion ID that is insulated from the pad portion PD physically and electrically connected to the conductive wiring 200.

In a preferred form, the pad portion PD may be patterned to enhance isolation performance.

Figures 5 and 6 illustrate an example of a patterned pad portion (PD). The pad portion PD is made by selectively opening only a portion contacting the conductive wiring 200. (FIG. 5) and a circular shape (FIG. 6) depending on the shape, and is located near the long side LS of the interconnector IC.

The interconnector IC includes the pad portion PD and the insulating portion ID so that it is possible to prevent the end portion of the solar battery from being shunted even when the interconnector IC covers the end portion.

Hereinafter, the wiring relationship between the n-type / p-type electrode and the conductive wiring of the rear contact type solar cell used in the present invention will be described.

7 is a schematic cross-sectional view of a rear contact type solar cell used in the present invention.

Referring to FIG. 7, the rear contact type solar cell has the antireflection film 130 positioned in a direction in which light enters, and the rear surface includes a tunnel layer 180, a first semiconductor part 121, a second semiconductor part 172, A passivation layer 190, a plurality of first electrodes 141, and a plurality of second electrodes 142. The intrinsic semiconductor portion 150 includes a passivation layer 190, a plurality of first electrodes 141,

Here, the antireflection film 130, the tunnel layer 180, and the passivation layer 190 may be omitted. However, since the efficiency of the solar cell is improved, the following description will be made by way of example.

The semiconductor substrate 110 may be formed of at least one of monocrystalline silicon and polycrystalline silicon doped with impurities of the first conductivity type or the second conductivity type. In one example, the semiconductor substrate 110 may be formed of a single crystal silicon wafer.

Here, the impurity of the first conductive type contained in the semiconductor substrate 110 or the impurity of the second conductive type may be any of n-type and p-type conductive types.

When the semiconductor substrate 110 has a p-type conductivity type, impurity of a trivalent element such as boron (B), gallium, indium, or the like is doped in the semiconductor substrate 110. However, when the semiconductor substrate 110 has an n-type conductivity type, impurities of pentavalent elements such as phosphorus (P), arsenic (As), and antimony (Sb) may be doped into the semiconductor substrate 110.

Hereinafter, the case where the impurity contained in the semiconductor substrate 110 is an impurity of the second conductivity type and is n-type will be described as an example. However, the present invention is not limited thereto.

The semiconductor substrate 110 may have a plurality of uneven surfaces on the entire surface thereof. Accordingly, the first semiconductor part 121 located on the front surface of the semiconductor substrate 110 may also have an uneven surface.

Accordingly, the amount of light reflected from the front surface of the semiconductor substrate 110 decreases, and the amount of light incident into the semiconductor substrate 110 increases.

The antireflection film 130 is formed on the front surface of the semiconductor substrate 110 to minimize the reflection of light incident from the outside to the front surface of the semiconductor substrate 110. The antireflection film 130 is formed of an aluminum oxide film (AlOx), a silicon nitride film (SiNx) An oxide film (SiOx), and a silicon oxynitride film (SiOxNy).

The tunnel layer 180 is disposed in direct contact with the entire rear surface of the semiconductor substrate 110, and may include a dielectric material. Accordingly, the tunnel layer 180 can pass carriers generated in the semiconductor substrate 110, as shown in FIG.

The tunnel layer 180 may pass carriers generated in the semiconductor substrate 110 and passivate the back surface of the semiconductor substrate 110.

In addition, the tunnel layer 180 may be formed of a dielectric material formed of SiCx or SiOx having high durability even at a high temperature process of 600 DEG C or more.

The first semiconductor section 121 may be disposed on the rear surface of the semiconductor substrate 110, for example, in direct contact with a part of the rear surface of the tunnel layer 180.

The first semiconductor section 121 may be formed of a polycrystalline silicon material having a first conductivity type opposite to the second conductivity type and disposed in the second direction y on the rear surface of the semiconductor substrate 110 .

Here, the first semiconductor section 121 may be doped with an impurity of the first conductivity type, and when the impurity contained in the semiconductor substrate 110 is an impurity of the second conductivity type, A pn junction is formed with the semiconductor substrate 110 with the layer 180 therebetween.

Since the first semiconductor section 121 forms a p-n junction with the semiconductor substrate 110, the first semiconductor section 121 is a p-type conductivity type and impurities of trivalent elements are doped.

The second semiconductor section 172 is extended on the rear surface of the semiconductor substrate 110 in a second direction y parallel to the first semiconductor section 121. The second semiconductor section 172 may be formed on the rear surface of the tunnel layer 180, 1 semiconductor regions 121, respectively.

The second semiconductor section 172 is formed of a polycrystalline silicon material doped with impurities of the second conductivity type at a higher concentration than the semiconductor substrate 110. Therefore, for example, when the semiconductor substrate 110 is doped with an n-type impurity which is an impurity of the second conductivity type, the plurality of second semiconductor portions 172 are n + impurity regions.

The second semiconductor section 172 prevents the hole movement toward the second semiconductor section 172, which is the direction of electron movement, by the potential barrier due to the difference in impurity concentration between the semiconductor substrate 110 and the second semiconductor section 172 (E. G., Electrons) to the second semiconductor portion 172 can be facilitated.

Therefore, the amount of charges lost due to the recombination of electrons and holes in the second semiconductor section 172 and the vicinity thereof or the first and second electrodes 200 is reduced and the electron movement is accelerated, Increase the amount of movement.

The first semiconductor section 121 serves as the emitter section and the second semiconductor section 172 serves as the emitter section of the semiconductor substrate 110. In the case where the semiconductor substrate 110 is the impurity of the second conductivity type, And a role as a step.

Alternatively, when the semiconductor substrate 110 contains impurities of the first conductivity type, the first semiconductor portion 121 serves as a rear electric field portion and the second semiconductor portion 172 serves as an emitter portion .

In the above description, the case where the first semiconductor section 121 and the second semiconductor section 172 are formed of a polycrystalline silicon material on the rear surface of the tunnel layer 180 has been described as an example.

Alternatively, if the tunnel layer 180 is omitted, impurities may be diffused in the back surface of the semiconductor substrate 110 and doped in the first semiconductor portion 121 and the second semiconductor portion 172, The first semiconductor part 121 and the second semiconductor part 172 may be formed of the same single crystal silicon material as the semiconductor substrate 110. [

The intrinsic semiconductor part 150 is formed on the rear surface of the tunnel layer 180 exposed between the first semiconductor part 121 and the second semiconductor part 172, Unlike the second semiconductor portion 121 and the second semiconductor portion 172, the intrinsic polycrystalline silicon layer is not doped with impurities.

In addition, as shown in the figure, each of both sides of the intrinsic semiconductor part 150 may have a structure that directly contacts the side surface of the first semiconductor part 121 and the side surface of the second semiconductor part 172.

The passivation layer 190 is formed on the back surface of the polycrystalline silicon layer formed on the first semiconductor section 121, the second semiconductor section 172, and the intrinsic semiconductor section 150 by a dangling bond defect Thereby preventing the carriers generated from the semiconductor substrate 110 from being recombined by the dangling bonds and disappearing.

The plurality of first electrodes 141 are connected to the first semiconductor section 121 and extend in the second direction y. The first electrode 141 collects a carrier, for example, a hole, moving toward the first semiconductor section 121, and thus becomes a p-type electrode.

The plurality of second electrodes 142 are connected to the second semiconductor portion 172 and extended in the second direction y in parallel with the first electrode 141. The second electrode 142 collects a carrier, for example, electrons, which has migrated toward the second semiconductor section 172, and thus becomes an n-type electrode.

The first electrode 141 and the second electrode 142 are elongated in the second direction y and are spaced apart from each other in the first direction x.

The rear contact type solar cell used in the present invention does not necessarily have the configuration described so far except that the first and second electrodes 200 are formed only on the back surface of the semiconductor substrate 110, Change is possible.

8 is a view briefly showing a relationship in which a conductive wiring for connecting such a rear contact type solar cell to a neighboring solar cell is selectively connected to the first and second electrodes, and FIG. 9 is a cross- And Fig.

Referring to these drawings, a plurality of first electrodes 141 and a plurality of second electrodes 142 alternate with each other at a rear surface of a semiconductor substrate 110, And extends in the second direction (y).

In addition, the plurality of conductive wirings 200 are elongated in the first direction (x) and spaced apart from the neighboring ones by a certain distance.

The plurality of conductive wirings 200 may include a plurality of first conductive wirings 210 that are selectively connected only to the first electrodes 141 at positions where the first wirings 200 intersect and overlap the plurality of first electrodes 141, And a plurality of second conductive wirings (220) selectively connected to the second conductive wirings (142). Here, if the plurality of first electrodes 141 is a p-type electrode, the first conductive wiring 210 becomes a p-type conductive wiring and the second conductive wiring 220 becomes an n-type conductive wiring.

The plurality of first conductive wirings 210 are physically and electrically connected to the first electrodes 141 by the conductive adhesive agent 251 at the intersections of the first electrodes 141 and the second electrodes 142, And is insulated from the second electrode 142 by the insulating layer 252 at the intersection where the first electrode 142 intersects the first electrode 142. [

Similarly, the plurality of second conductive wirings 220 are physically and electrically connected to the second electrodes 142 by the conductive adhesive 251 at the intersection where the second electrodes 142 intersect with each other, And is insulated from the first electrodes 141 by an insulating layer 252 at an intersection where the first electrodes 141 intersect.

The conductive wiring 200 is formed of a conductive metal and includes a conductive core containing any one of gold (Au), silver (Ag), copper (Cu), and aluminum (Al) And a conductive coating layer comprising an alloy including tin (Sn) or tin (Sn).

In a preferred example, the core may be formed of copper (Cu), and the coating layer may be formed of SnBiAg, which is an alloy containing tin (Sn).

The conductive wiring 200 may have a conductive wire shape having a circular section or a ribbon shape having a width larger than the thickness.

The line width of each of the illustrated conductive wirings 200 may be formed to be between 0.5 mm and 2.5 mm in consideration of minimizing the manufacturing cost while keeping the line resistance of the conductive wirings sufficiently low, Is preferably between 4 mm and 6.5 mm so as not to damage the short circuit current of the solar cell module in consideration of the total number of the wirings 200. [

Since the number of the conductive wirings 200 is 10 to 20 in a single solar cell, the total number of the first and second conductive wirings 200 to be arranged in one solar cell is 20 to 40.

The conductive adhesive 251 may be formed of a conductive metal or may be formed of any one of a solder paste, an epoxy solder paste, and a conductive paste. .

Here, the solder paste layer may be formed of an alloy containing tin (Sn) or tin (Sn), and the epoxy solder paste layer may be formed of an alloy containing tin (Sn) or tin (Sn) in the epoxy.

The insulating layer 252 may be any insulating material. For example, an insulating material such as epoxy, polyimide, polyethylene, acrylic, or silicone may be used.

10 schematically shows how an interconnection (IC) for physically and electrically connecting the overlapping solar cells is connected to the conductive wirings 210 and 220.

In the present invention, adjacent solar cells are connected to the conductive wirings 210 and 220 directly by the interconnection IC so that two neighboring solar cells are wired, and the conductive wirings 210 and 220 are connected by the connector CN Or may be wired in such a manner that they are connected to each other and the interconnector (IC) is connected to the connector CN. Alternatively, the connector CN and the inter connector IC may be used in combination as described below.

10, the first conductive wiring 210 protrudes outward beyond the right end SER of the solar cell, while the end of the second conductive wiring 220 protrudes from the left end SEL of the solar cell SEL ).

As illustrated in FIGS. 1 and 2, the left end SEL of the solar cell is exposed to the outside, while the right end SER is obscured by the neighboring solar cell. Therefore, the second conductive wiring 220 is not exposed to the outside so long as at least the left end portion SEL is aligned or the end portion thereof is located inside.

The ends of the plurality of second conductive wirings 220 are connected to each other by a connector CN. It is preferable that the connector CN is located on the same side as the left end or at least the left end of the connector as shown in the figure so as not to be exposed to the outside.

 One example of the connector CN is shown in Figs. 11 and 12. Fig. Referring to this figure, the connector CN can be used as a connector CN in a preferred form, such as a copper ribbon, a conductive wiring, the above-described interconnector, and the like.

11, one surface of the connector CN is provided with a pad portion PD that is physically and electrically connected to the conductive wiring line 200. A portion except for the pad portion PD is coated with an insulating material, (ID) made by using the

As illustrated in Fig. 12, the other surface of the connector CN entirely forms the pad portion PD.

Referring back to FIG. 10, the interconnector (IC) is disposed at the right end SER of the solar cell and is physically and electrically connected to the first conductive interconnect 210.

At this time, since the interconnection IC is connected to the connector CN of the other solar cells disposed above the right end SER, the plurality of first conductive interconnection lines 210 are connected to only a part of the interconnection IC It is preferable to be connected.

13 to 15 are schematic views for explaining a process of modularizing a solar cell module having the above-described structure.

13, the first conductive wiring 210 and the second conductive wiring 220 are selectively bonded to the first electrode 141 and the second electrode 142 of the first solar cell C1, respectively, The connector CN and the inter connector IC are bonded to the respective ends of the first conductive wiring 210 and the second conductive wiring 220. [

It is preferable that local heating is performed using a pulse heater so as to prevent thermal stress from being transmitted along the conductive wiring at the time of bonding. Pulse heaters emit instantaneous high heat during operation, while maintaining low temperatures when not in operation, minimizing thermal stress on the member.

In Fig. 14, the interconnector (CN) is disposed with the interconnector (IC) wrapping the right end of the first solar cell (C1) and also on the end of the front side.

In Fig. 15, a second solar cell C2 provided with a connector CN and an interconnector IC is disposed so as to overlap with the first solar cell C1. At this time, the connector CN of the second solar cell C2 is positioned so as to be bonded to the front-side interconnection IC of the first solar cell C1, and they are bonded.

As a method of bonding, a pulse heater may be used as described above. A string is manufactured only in a state where the connector CN and the IC are physically contacted with each other. Then, in the lamination process, A method of bonding by heat is also possible.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, Of the right.

Claims (13)

A plurality of solar cells having a first electrode and a second electrode disposed on a rear surface of the semiconductor substrate and overlappingly arranged at an end of the second solar cell adjacent to the end of the first solar cell, And
And an interconnector for electrically connecting the first electrode of the first solar cell and the second electrode of the second solar cell and closely surrounding the end of the first solar cell,
The interconnector includes a first portion connected to a first electrode of the first solar cell and positioned at a rear end of the first solar cell, a second portion surrounding a side end portion of the first solar cell, And a third portion located on an end surface of the cell and connected to a second electrode of the second solar cell,
And an insulating material is disposed between the end of the first connector and the interconnector. delete delete The method according to claim 1,
Wherein the interconnector is connected to the first conductive interconnects connected to the second electrode only in each of the plurality of solar cells. 5. The method of claim 4,
Further comprising a connector which is connected to second conductive wirings connected to the first electrode only in each of the plurality of solar cells and which is located on the opposite rear side of the end where the interconnector is disposed. 6. The method of claim 5,
Wherein the interconnector is hidden by the second solar cell. 6. The method of claim 5,
And the connector is bonded to the second conductive wirings by solder. 6. The method of claim 5,
Wherein the third portion of the interconnector and the connector are bonded to each other at an end portion where the first solar cell and the second solar cell overlap each other. delete The method of claim 5,
Wherein the interconnector includes a pad portion having one surface to which the first conductive interconnects are bonded and an insulating portion that is coated with an insulating material. 11. The method of claim 10,
Wherein the pad portion is patterned so as to be adhered only to the first conductive wirings. 11. The method of claim 10,
The solar cell module according to claim 1, wherein the pad portion and the insulation portion are formed on a surface opposite to the one surface. 11. The method of claim 10,
And the pad portion is bonded to the first conductive wirings by solder.

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