KR101784417B1 - Light emitting device and manufacturing method of the same - Google Patents

Abstract

The present invention relates to a light emitting device and a method of manufacturing the same. One aspect of the present invention is a light emitting device including a substrate, a structure disposed on the substrate and stacked with the first conductivity type semiconductor layer, the active layer, And a first and a second terminal portion electrically connected to the first and second conductive type semiconductor layers, respectively, and at least one of the first and second terminal portions is electrically connected to the first and second conductive type semiconductor layers, Wherein the light emitting structure has a structure extending from the upper surface of the light emitting structure along the side surfaces of the light emitting structure and the substrate.

Description

[0001] LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME [0002]

The present invention relates to a light emitting device and a manufacturing method thereof.

A light emitting diode (LED), which is one type of semiconductor light emitting device, is a semiconductor device capable of generating light of various colors due to recombination of electrons and holes at a junction portion of p and n type semiconductors when an electric current is applied. The demand for such light emitting diodes is continuously increasing because they have many advantages such as long lifetime, low power supply, excellent initial driving characteristic, high vibration resistance and the like compared to the light emitting structure based on the filament. Particularly, in recent years, a group III nitride semiconductor capable of emitting light in a short wavelength range of a blue series has been spotlighted.

Generally, light emitting diodes are manufactured at a wafer level and then diced into individual chip units, and then individual chips are packaged with a phosphor film, a lens, or the like added thereto. However, when such a method is used, the packaging process is performed for each chip, so that the process becomes complicated and the cost increases, and furthermore, it is also difficult to miniaturize the final package structure. Accordingly, there is a need in the art for a wafer level packaging technique suitable for simplifying the process and miniaturizing the device.

It is an object of the present invention to provide a light emitting device that can be miniaturized in size and can improve the light extraction efficiency by using a lens of a chip size.

It is another object of the present invention to provide a method of manufacturing a light emitting device in which the manufacturing process is simplified and the manufacturing cost is reduced in manufacturing the light emitting device.

According to an aspect of the present invention,

A light emitting device comprising: a substrate; a light emitting structure disposed on the substrate and having a structure in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are stacked; a lens disposed on the light emitting structure; Wherein at least one of the first and second terminal portions has a structure extending from the upper surface of the light emitting structure and a side surface of the substrate, the first and second terminal portions being electrically connected to the first and second conductive semiconductor layers, respectively, And a light emitting device.

In one embodiment of the invention, the substrate may be an electrically conductive substrate.

In this case, the first terminal portion may be disposed on the lower surface of the substrate, and the second terminal portion may have a structure extending from the upper surface of the light emitting structure along the side surfaces of the light emitting structure and the substrate.

In this case, the light emitting device may further include an insulator disposed between the side surfaces of the light emitting structure and the substrate and the second terminal portion.

In one embodiment of the present invention, the lens may be formed so as not to cover the side surface of the light emitting structure.

In one embodiment of the present invention, the light emitting device may further include a light transmitting polymer layer disposed between the lens and the light emitting structure.

In one embodiment of the present invention, the light emitting device may further include a light converting layer disposed between the lens and the light emitting structure to convert the wavelength of light emitted from the light emitting structure.

In one embodiment of the invention, the lens may comprise a microlens array formed on the surface.

In one embodiment of the present invention, the substrate may be an electrically insulating substrate.

In this case, the first terminal portion is disposed on a lower surface of the substrate and is electrically connected to the light emitting structure by a conductive via passing through the substrate, and the second terminal portion is electrically connected to the light emitting structure and the substrate And may have a structure extending along the side surface.

In this case, each of the first and second terminal portions may have a structure extending from the upper surface of the light emitting structure along the side surfaces of the light emitting structure and the substrate.

According to another aspect of the present invention,

Forming a light emitting structure by growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a growth substrate; separating the growth substrate from the light emitting structure after attaching the support substrate on the light emitting structure; Forming at least one through-hole in the light-emitting structure and the supporting substrate, and forming a terminal portion filling at least a part of the through-hole so as to be connected to the upper surface of the light-emitting structure, to provide.

In one embodiment of the present invention, the method may further include forming a lens on the light emitting structure.

In this case, the lens may be formed in a unit of individual chips.

In one embodiment of the present invention, the method may further include dicing the light emitting structure and the support substrate into individual chip units.

In this case, at least one of the regions cut in the dicing may be the terminal portion.

In one embodiment of the present invention, the method may further include forming a light transmitting polymer layer on the light emitting structure.

In one embodiment of the present invention, the method may further include forming a light conversion layer on the light emitting structure to convert a wavelength of light emitted from the light emitting structure.

In one embodiment of the present invention, the step of forming the terminal portion may further include forming an insulator on the inner wall of the through-hole.

In the case of the light emitting device according to the present invention, the light extraction efficiency can be improved by using a chip size lens in addition to miniaturization. Furthermore, in manufacturing the above-described light emitting device, the manufacturing process can be simplified and the manufacturing cost can be reduced.

1 is a cross-sectional view schematically showing a light emitting device according to an embodiment of the present invention.
2 is a cross-sectional view schematically showing a light emitting structure in the light emitting device of FIG.
3 is an enlarged cross-sectional view showing a region between the light emitting structure and the substrate in the light emitting device of FIG.
4 is an enlarged cross-sectional view of a lens region in the light emitting device of FIG.
5 to 10 are cross-sectional views schematically showing a manufacturing method of a light emitting device according to an embodiment of the present invention.
11 is a cross-sectional view schematically showing a light emitting device according to a modified example of the embodiment of FIG.
12 is a cross-sectional view schematically showing a light emitting device according to another embodiment of the present invention.
13 to 15 are sectional views schematically showing a light emitting device according to a modified example of the embodiment of Fig. 12, respectively.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Further, the embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. Accordingly, the shapes and sizes of the elements in the drawings may be exaggerated for clarity of description, and the elements denoted by the same reference numerals in the drawings are the same elements.

1 is a cross-sectional view schematically showing a light emitting device according to an embodiment of the present invention. 2 is a cross-sectional view schematically showing a light emitting structure in the light emitting device of FIG. FIG. 3 is an enlarged cross-sectional view showing a region between the light emitting structure and the substrate in the light emitting device of FIG. 1. FIG. 4 is an enlarged cross-sectional view of the lens region of the light emitting device of FIG.

1, a light emitting device 100 according to the present embodiment includes a substrate 102, a light emitting structure 101 disposed thereon, first and second terminal portions 103a and 103b, a light transmitting polymer layer 105, A photo-conversion layer 106, and a lens 107, as shown in Fig. For example, the substrate 102 may be made of various materials such as Au, Ni, Al, Cu, W, Si, Se, GaAs, Materials may be mixed and used. The first terminal portion 103a is disposed on the lower surface of the substrate 102 and may be connected to the first conductive type semiconductor layer 203 of the light emitting structure 101. [

The second terminal portion 103b has a structure extending from the upper surface of the light emitting structure 101 along the side surfaces of the light emitting structure 102 and the substrate 102. Accordingly, And may be connected to the semiconductor layer 201. In this case, the insulator 104 may be disposed between the second terminal portion 103b and the side surfaces of the light emitting structure 101 and the substrate 102, and a material such as silicon oxide or silicon nitride may be used as the insulator 104 have. In addition, the second terminal portion 103b may be bent and extend to the lower portion of the substrate 102. [ The first and second terminal portions 103a and 103b are disposed below the light emitting device 100 so that the light emitting device 100 can be easily mounted on a PCB substrate by a surface mounting process SMT. Meanwhile, the first and second terminal portions 103a and 103b may be formed using a metal or the like having excellent electrical conductivity.

The light emitting structure 100 is a stacked structure including first and second conductivity type semiconductor layers 203 and 201 and an active layer 202 interposed therebetween as shown in FIG. In the case of the present embodiment, the first and second conductivity type semiconductor layers 203 and 201 may be p-type and n-type semiconductor layers, respectively, and a nitride semiconductor such as Al _x In _y Ga _{(1-xy )} N (0 _? X? 1, 0? Y? 1, 0? X + y? 1). In addition to the nitride semiconductor, a GaAs-based semiconductor or a GaP-based semiconductor may also be used. The active layer 202 formed between the first and second conductivity type semiconductor layers 203 and 201 emits light having a predetermined energy by recombination of electrons and holes and the quantum well layer and the quantum barrier layer alternate with each other A multi quantum well (MQW) structure. In the case of a multiple quantum well structure, for example, an InGaN / GaN structure may be used. The first and second conductive semiconductor layers 203 and 201 and the active layer 202 may be formed using a semiconductor layer growth process such as MOCVD, MBE, HVPE, or the like known in the art.

3, a bonding layer 108 may be interposed between the light emitting structure 101 and the substrate 102. The bonding layer 108 may be formed of a conductive polymer such as eutectic metal such as AuSn or conductive epoxy Lt; / RTI > However, the bonding layer 108 is not necessarily made of a conductive material, and a non-conductive bonding material may be used. However, in this case, the first terminal portion 103a may be connected to the first conductivity type semiconductor layer 203 through a via structure passing through the bonding layer 108. 11, a reflective metal layer may be further disposed between the light emitting structure 101 and the substrate 102. [ The reflective metal layer may reflect the light emitted from the light emitting structure 101 toward the upper portion of the light emitting device 100, that is, toward the lens 107. Further, the reflective metal layer may function as the first conductive semiconductor layer 203, And an ohmic contact can be achieved. The reflective metal layer may include a material such as Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt or Au.

1, a light transmitting polymer layer 105 is disposed on an upper portion of the light emitting structure 101, and is made of a material such as silicon resin or epoxy resin, and stably bonded to the light converting layer 106 disposed thereon And may be formed so as to cover the upper portion of the second terminal portion 103b to provide a flat surface before forming the light conversion layer 106. [ However, the light transmissive polymer layer 105 is not necessarily required in the present invention, and the light conversion layer 106 and the lens 107 may be formed directly without the light transmissive polymer layer 105. Also, although not shown, a reflection wall structure may be formed at the edge of the light transmitting polymer layer 105 to adjust the directivity angle of light emitted to the outside.

The light conversion layer 106 functions to convert the wavelength of light emitted from the light emitting structure 101 and may have a wavelength conversion material such as a phosphor or a quantum dot. In this case, the wavelength converting material may be a plate structure (e.g., a ceramic transformer) formed only by itself, or may have a film structure dispersed in a silicone resin or the like. In this case, when the wavelength converting material is a phosphor and blue light is emitted from the light emitting structure 101, the red phosphor may include a nitride-based phosphor such as MAlSiNx: Re (1? X? 5) and a sulfide- . Wherein M is at least one selected from among Ba, Sr, Ca and Mg, D is at least one selected from S, Se and Te and Re is Eu, Y, La, Ce, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, F, Cl, Br and I. The green phosphors include silicate-based phosphors of M ₂ SiO ₄ : Re, sulfide phosphors of MA ₂ D ₄ : Re, phosphors of β-SiAlON: Re, and oxide phosphors of MA ' ₂ O ₄ : Re' , M is at least one element selected from Ba, Sr, Ca and Mg, A is at least one selected from Ga, Al and In, D is at least one selected from S, Se and Te, A ' At least one selected from the group consisting of Gd, La, Lu, Al and In, and Re is at least one selected from the group consisting of Eu, Y, La, Ce, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Cl, Br and I, and Re 'may be at least one selected from Ce, Nd, Pm, Sm, Tb, Dy, Ho, Er, Tm, Yb, F, Cl, Br and I.

The quantum dots are nanocrystalline grains composed of a core and a shell, and the size of the core is about 2 to 100 nm. The quantum dot can be used as a fluorescent material emitting various colors such as blue (B), yellow (Y), green (G) and red (R) by adjusting the size of the core. (ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe and MgTe) and Group III-V compound semiconductors (GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, , AlSb, AlS, and the like) or a Group IV semiconductor (Ge, Si, Pb, and the like) are bonded to each other to form a core and a shell structure constituting quantum dots. In this case, in order to terminate the molecular bonding of the shell surface to the outer shell of the quantum dots, to suppress the aggregation of the quantum dots, to improve dispersibility in the resin such as silicon resin or epoxy resin, or to improve the function of the phosphor, acid to form an organic ligand.

Meanwhile, the lens 107 is disposed on the light emitting structure 101 to adjust the light directing angle, and is not disposed in a package manufactured in a state of being separated into individual chips as described later. As described later, Is fabricated at the wafer level and is diced together with the light emitting structure 101 and the substrate 102. 1, the lens 107 is disposed on the light emitting structure 101 so that the side surface of the light emitting structure 101 is not covered, thereby reducing the size of the light emitting device 100 And more chips can be obtained from the same wafer. Further, as shown in Fig. 4, as a modified example, the lens 107 'may include a microlens array a formed on the surface. As the microlens array is formed on the surface of the lens 107 ', the light extraction efficiency can be further improved.

Hereinafter, an example of a step of manufacturing a light emitting device having the above structure will be described. 5 to 10 are cross-sectional views schematically showing a manufacturing method of a light emitting device according to an embodiment of the present invention.

First, as shown in FIG. 5, a light emitting structure 101 is formed on a growth substrate 109. The growth substrate 109 is used as a base substrate for growing a semiconductor single crystal, and for example, a sapphire substrate can be used. Sapphire is a hexagonal-rhombo-symmetric crystal with lattice constants of 13.001 Å and 4.758 Å in the c-axis and the a-axis directions, respectively. The sapphire has C (0001), A (1120) ) Face and the like. In this case, since the C-plane is relatively easy to grow the nitride film and is stable at high temperature, it is usefully used as a substrate for growing a nitride semiconductor. Of course, substrates made of SiC, GaN, ZnO, MgAl ₂ O ₄ , MgO, LiAlO ₂ and LiGaO ₂ can also be used.

The light emitting structure 101 includes first and second conductive semiconductor layers 203 and 201 and an active layer 202 as shown in FIG. 2. As described above, the first conductive semiconductor layer 203, And the substrate 102 are disposed adjacent to each other, the second conductivity type semiconductor layer 201 is preferentially grown on the growth substrate 109. In this case, the first and second conductivity type semiconductor layers 203 and 201 and the active layer 202 can be grown using processes such as MOCVD, MBE, and HVPE.

Next, as shown in Fig. 6, a substrate 102 is attached as a support on the light emitting structure 101, and then the growth substrate 109 is separated from the light emitting structure 101. Next, as shown in Fig. The substrate 102 serves as a support for supporting the light emitting structure 101 when a process such as laser lift off is performed to remove the growth substrate 102. When the substrate 102 is made of an electrically conductive material, 101, respectively. In this case, the substrate 102 may be formed by a method such as plating or bonding. However, as described later, the substrate 102 is not necessarily formed of an electrically conductive material, but may be formed of a nonconductive material such as alumina, AlN, undoped silicon, or the like. On the other hand, the separation of the growth substrate 109 can be performed by using a laser lift-off for irradiating a laser between the growth substrate 109 and the light emitting structure 101, but not always limited thereto. For example, Off may be used.

Next, as shown in FIG. 7, a through hole H is formed in the light emitting structure 101 and the substrate 102. 7 shows an example in which one through hole H is formed, however, two or more through holes H may be formed depending on the number of devices to be manufactured. It is also possible to form a through hole H at one time after the light emitting structure 101 and the substrate 102 are bonded together and to form a through hole in each of the light emitting structure 101 and the substrate 102 . Then, an insulator 104 is formed on the inner wall of the through hole H by a process such as vapor deposition. As described above, the insulator 104 is for preventing direct contact between the light emitting structure 101 having electrical conductivity and the substrate 102 and the terminal portion. In this case, the insulator 104 may be appropriately extended in accordance with the formation of the second terminal portion 103b in addition to the inner wall of the through hole H. For example, as shown in FIG. 7, .

Next, as shown in Fig. 8, first and second terminal portions 103a and 103b may be formed, in which case a suitable deposition or plating process known in the art may be used. The first terminal portion 103a is formed on the lower surface of the substrate 102 and connected to the light emitting structure 101 and the second terminal portion 103b is extended from the upper surface of the light emitting structure 101, (H), and is formed to cover a part of the lower surface of the substrate 102.

9, a light transmitting polymer layer 105 and a light converting layer 106 are formed on the light emitting structure 101, and thereafter, as shown in FIG. 10, a lens 107 ). In the case of the lens 107, it is formed in a structure in which a plurality of lenses are integrally formed, that is, a wafer level lens, without being separated in advance in units of chips. Such a wafer level lens may be separately fabricated and attached to the top of the light emitting structure 101 or, alternatively, may be molded into individual lens forms after being attached. Then, the structure in which the lens 107 is attached is separated in the direction of the arrow so as to be separated into individual light emitting devices, whereby three light emitting devices can be obtained in the example of Fig.

11 is a cross-sectional view schematically showing a light emitting device according to a modified example of the embodiment of FIG. In the case of this embodiment, the light-emitting device 200 uses an electrically insulating substrate 102 ', unlike the previous embodiment, and examples thereof include materials such as alumina, AlN, and undoped silicon. The first terminal portion 103a may be connected to the light emitting structure 101 by the conductive via V and the insulator 104 may be connected to the substrate 102 ' And may not be formed in the region between the terminal portions 103b.

Although the structure in which the light emitting structure 101 is applied with an external electric signal through the top and bottom surfaces has been described in the foregoing embodiments, the pair of electrodes of the light emitting structure 101 may be arranged to face in the same direction will be. Specifically, when the pair of electrodes face the direction in which the lens 107 is disposed, the first terminal portion 103a is formed in the same shape as the second terminal portion 103b, that is, from the top surface of the light emitting structure 101, May have a structure extending to the sides of the substrate 101 and the substrate 102, 102 '. The first and second terminal portions 103a and 103b are formed to penetrate through the substrates 102 and 102 'when the pair of electrodes faces the direction in which the substrates 102 and 102' are disposed (flip chip structure) The light emitting structure 101 may be electrically connected to the light emitting structure 101 by a conductive via (V).

12 is a cross-sectional view schematically showing a light emitting device according to another embodiment of the present invention. 12, the light emitting device 300 according to the present embodiment includes a substrate 302, a light emitting structure 301 disposed thereon, first and second terminal portions 303a and 303b, a light conversion layer 306, And a lens 307 as shown in Fig. Although not shown, a translucent polymer layer may be disposed between the light emitting structure 301 and the light conversion layer 306. The substrate 302 is used as an electrically insulating substrate and the first terminal portion 303a is electrically connected to the light emitting structure 301 (not shown) through a conductive via penetrating the substrate 302. In this embodiment, ) Of the first conductivity type semiconductor layer 403, while the lower surface can be exposed to the outside. In this case, in the first terminal portion 303a, a portion between the first conductivity type semiconductor layer 403 and the substrate 302 forms an ohmic contact with the first conductivity type semiconductor layer 403, Reflective metal layer.

The second terminal portion 303b has a conductive via penetrating through the substrate 302 like the first terminal portion 303a and has a structure in which the bottom surface is exposed to the outside. The second terminal portion 303b includes a conductive via which is connected to the second conductive type semiconductor layer 401 through the first conductive type semiconductor layer 403 and the active layer 402. [ The insulator 304 is disposed between the active layer 402 and the first conductivity type semiconductor layer 403 and the conductive via connected to the second conductivity type semiconductor layer 401 to prevent a short circuit. The second terminal portion 303b has such a structure that the portion of the upper surface of the light emitting structure 301 which prevents the progress of the light is eliminated and the light extraction efficiency can be improved and the contact region is formed in the second conductive semiconductor layer 401, It may be advantageous in current dispersion. In this case, the second terminal portion 303b may include two or more conductive vias in contact with the second conductivity type semiconductor layer 401 so as to further facilitate current dispersion. 12, the conductive vias formed on the substrate 302 and the conductive vias formed on the light-emitting structure 301 form a part of one conductive via. However, in this embodiment, The two conductive vias may be spatially separated if they are electrically connected to each other.

The bonding layer 308 may be disposed between the light emitting structure 301 and the substrate 302 or between the reflective metal layer portion of the first terminal portion 303a and the substrate 302 as in the present embodiment, Is made of an electrically insulating material. In the case of the electrically insulating material usable as the bonding layer 308, materials such as silicon resin and epoxy resin can be mentioned, and the process cost can be relatively reduced as compared with the case of using a conductive bonding material such as AuSn.

13 to 15 are sectional views schematically showing a light emitting device according to a modified example of the embodiment of Fig. 12, respectively. 13, unlike the embodiment of FIG. 12, the light emitting device 400 of the present embodiment includes an electrically conductive substrate 302 ', for example, Au, Ni, Al, Cu, W, A substrate made of various materials such as Si, Se, GaAs, GaN, and SiC or a mixture of these materials is used. Thus, between the substrate 302 'and the first and second terminal portions 303a and 303b An insulator 304 is additionally disposed.

Next, in the embodiment of FIG. 14, the light emitting device 500 uses the electrically conductive substrate 302 ', and the first terminal portion 303a is not directly exposed to the outside. The first terminal portion 303a is connected to the first conductivity type semiconductor layer 403 and is connected to the substrate 302 'through the electrically insulating bonding layer 308. [ In this case, although the first terminal portion 303a is not directly exposed to the outside, it can be seen that the substrate 302 'serves as a terminal portion.

Next, in the embodiment of FIG. 15, the light emitting device 600 differs in that the electrically conductive bonding layer 308 'is used, unlike the case where the electrically insulating bonding layer 308 is used in the previous embodiment. In the case of the bonding layer 308 'having electrical conductivity, a eutectic metal layer such as AuSn or a conductive epoxy may be used. As the bonding layer 308 'has electrical conductivity, the insulator 304 is extended to the region between the bonding layer 308' and the first and second terminal portions 303a and 303b.

As described above, in the case of the light emitting device proposed in the present invention, the substrate and the bonding layer can employ both the electrically insulating material and the electrically conductive material, .

On the other hand, in the case of the light emitting device according to the embodiment of FIGS. 12 to 15, the manufacturing method described above through FIGS. 5 to 10 may be suitably modified. That is, a groove is formed in a range not penetrating the light emitting structure 301 instead of a through hole, thereby forming a conductive via connected to the second conductive type semiconductor layer 401. 5 to 10, the second terminal portion 103b is formed along the side surface of the light emitting structure 101 and the substrate 102, so that a part of the dicing region becomes the second terminal portion 103b , The conductive via portions of the first and second terminal portions 303a and 303b are not provided in the dicing region in the case of the embodiment of Figs.

The present invention is not limited by the above-described embodiments and the accompanying drawings, but is intended to be limited only by the appended claims. It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. something to do.

101: light emitting structure 102: substrate
103a, 103b: first and second terminal portions 104: insulator
105: translucent polymer 106: photo-conversion layer
107: lens 108: bonding layer
109: Growth substrate 201: First conductive type semiconductor layer
202: active layer 202: second conductivity type semiconductor layer
H: Through hole V: Conductive via

Claims (19)

Board;
A light emitting structure disposed on the substrate and having a structure in which a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are stacked;
A light conversion layer disposed on the light emitting structure to convert a wavelength of light emitted from the light emitting structure;
A lens disposed on the light conversion layer; And
And first and second terminal portions electrically connected to the first and second conductivity type semiconductor layers, respectively,
Wherein the substrate is an electrically conductive substrate,
Wherein the first terminal portion is disposed on the lower surface of the substrate and the second terminal portion has a structure extending from the upper surface of the light emitting structure along the side surfaces of the light emitting structure and the substrate,
Wherein one surface of the lens, one surface of the light conversion layer, one surface of the substrate, and one surface of the first terminal portion are coplanar.
delete The method according to claim 1,
And an insulator disposed between the side surfaces of each of the light emitting structure and the substrate and the second terminal portion.
The method according to claim 1,
And the lens is formed so as not to cover the side surface of the light emitting structure.
The method according to claim 1,
And a light-transmitting polymer layer disposed between the light-converting layer and the light-emitting structure.
Growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a growth substrate to form a light emitting structure;
Attaching a support substrate on the light emitting structure and separating the growth substrate from the light emitting structure;
Forming at least one through-hole in the light-emitting structure and the supporting substrate;
Forming a first terminal portion on a lower surface of the support substrate to be connected to a lower surface of the light emitting structure and forming a second terminal portion filling at least a portion of the through hole to be connected to an upper surface of the light emitting structure;
Forming a light conversion layer on the light emitting structure for converting a wavelength of light emitted from the light emitting structure;
Forming a lens on the photo-conversion layer; And
Dicing the lens, the light conversion layer, the light emitting structure, and the support substrate into individual chip units;
Lt; / RTI >
Wherein the support substrate is an electrically conductive substrate,
Wherein one surface of the lens, one surface of the light conversion layer, one surface of the support substrate, and one surface of the first terminal portion are coplanar.
The method according to claim 6,
Wherein the lens is formed in a unit of individual chips.
The method according to claim 6,
Wherein at least one of the regions cut in the dicing step is the second terminal portion.
The method according to claim 6,
And forming a light-transmitting polymer layer on the light-emitting structure.
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