CN205645804U - Emitting diode filament and have its emitting diode lamp - Google Patents
Emitting diode filament and have its emitting diode lamp Download PDFInfo
- Publication number
- CN205645804U CN205645804U CN201620373281.XU CN201620373281U CN205645804U CN 205645804 U CN205645804 U CN 205645804U CN 201620373281 U CN201620373281 U CN 201620373281U CN 205645804 U CN205645804 U CN 205645804U
- Authority
- CN
- China
- Prior art keywords
- emitting diode
- light
- transparency carrier
- metallic plate
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 30
- 239000011230 binding agent Substances 0.000 claims description 18
- 239000008393 encapsulating agent Substances 0.000 claims description 16
- 230000004888 barrier function Effects 0.000 claims description 11
- 230000005540 biological transmission Effects 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- 230000009466 transformation Effects 0.000 claims description 5
- 238000004020 luminiscence type Methods 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 description 20
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 230000003321 amplification Effects 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- -1 Ag slurries.Thus Chemical class 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Led Devices (AREA)
Abstract
The utility model discloses an emitting diode filament and have its emitting diode lamp. This emitting diode filament includes: the transparency carrier of microscler shape has first surface and second surface, and the second surface is relative with the first surface, a plurality of emitting diode chips are arranged on the first surface of transparency carrier, first metal sheet and second metal sheet, a side end and opposite side tip with the transparency carrier combine together respectively. In addition, the transparency carrier ends the post including the first accepting groove that is used for accommodating first metal sheet on a side end and the first card that lies in the inside of first accepting groove, and first metal sheet has and is used for accommodating the first accepting hole that first card ends the post, and first metal sheet is accommodated in first accepting groove in the side end department of transparency carrier for first accepting hole is acceptd first card and is ended the post. According to the utility model discloses, can provide and adopt the transparency carrier to come like the emitting diode lamp of current bulb to wide angle of direction release light.
Description
Technical field
This utility model relates to a kind of light emitting diode (LED) filament and has its LED light lamp.
Background technology
Existing bulb (light bulb) utilizes the metallic filament of tungsten etc to come luminous.Existing bulb can discharge light in the range of 360 degree, thus has the feature of applicable room lighting.But, utilize the bulb of metallic filament to be substituted by LED light lamp the most rapidly because of short life-span and low light efficiency.
Compared with bulb, LED lamp has considerably long life-span and high light efficiency.But, light emitting diode is generally installed due to LED light lamp on the opaque substrate of printed circuit board (PCB) etc., thus there is the problem being difficult to discharge light in the broad regions of 360 degree of scopes.
The user of service having got used to existing bulb has the tendency having a preference for the wide bulb pointing to angle release light.Therefore, it is necessary to develop the LED light lamp similar with the bulb using existing filament.
On the other hand, in order to wide sensing angle release light, need to replace the opaque substrate of printed circuit board (PCB) etc with transparency carrier.But, due to transparency carrier usually insulation, accordingly, it would be desirable to for the countermeasure to light emitting diode supply external power.
Utility model content
Technical purpose
The purpose that this utility model is to be realized is to provide can be to the wide LED light lamp pointing to angle release light and for this light emitting diode filament as existing bulb.
Use for a long time in LED light lamp even if the another object that this utility model is to be realized is to provide, it is also possible to maintain the light emitting diode filament of stability and there is its LED light lamp.
Technical scheme
The light emitting diode filament of an embodiment of the present utility model includes: the transparency carrier of elongated shape, has first surface and second surface, and second surface is relative with first surface；Multiple light-emitting diode chip for backlight unit, are arranged on the first surface of transparency carrier；And first metallic plate and the second metallic plate, combine with a side end and the end side of transparency carrier respectively.By combining the first metallic plate and the second metallic plate, it is possible to power externally to multiple light-emitting diode chip for backlight unit.Additionally, transparency carrier includes the first locking post of the first accepting groove for housing the first metallic plate on a described side end and the inside being positioned at the first accepting groove, first metallic plate has the first accepting hole for housing the first locking post, first metallic plate is accommodated in the first accepting groove in the end, side of transparency carrier so that the first accepting hole houses the first locking post.
Owing to the first locking post of transparency carrier is accommodated in the first accepting hole of the first metallic plate, thus it is possible to prevent the first metallic plate to separate with transparency carrier because of thermally-induced expansion and contraction.
And then, light emitting diode filament can also include the binding agent making the first metallic plate bonding with transparency carrier in the inside of the first accepting groove.
Especially, the width of the first accepting hole of the first metallic plate can be more than the width of the first locking post.Therefore, the first metallic plate can not be affected by the first locking post and carry out expanding and shrinking.
Light emitting diode filament can also include the multiple bonding lines electrically connected with multiple light-emitting diode chip for backlight unit.Multiple light-emitting diode chip for backlight unit can utilize wafer bonding techniques or clear binder bonding with transparency carrier.And then, multiple light-emitting diode chip for backlight unit can be serially connected.Can be at domestic power supply therefore, it is possible to provide, such as, the light emitting diode filament driven under the high voltage condition such as 110V or 220V.
It addition, light emitting diode filament could be included for covering the encapsulant of multiple light-emitting diode chip for backlight unit.Encapsulant can include the material for transformation of wave length of fluorophor or quantum dot that the light discharged from multiple light-emitting diode chip for backlight unit is converted to the light of longer wavelength etc.Encapsulant can be formed by transparent resins such as silicon, and the material for transformation of wave length of fluorophor or quantum dot etc can be scattered in transparent resin.
In several embodiments, encapsulant can be arranged on the first surface of transparency carrier.It addition, encapsulant can also surround first surface and the second surface of transparency carrier.
Light emitting diode filament can also include bonding line, and bonding line makes the first metallic plate being contained in the inside of the first accepting groove electrically connect with a light-emitting diode chip for backlight unit in multiple light-emitting diode chip for backlight unit.Encapsulant can cover a part for bonding line.
Transparency carrier could be included for the second accepting groove housing the second metallic plate in described end side and the second locking post of the inside being positioned at the second accepting groove, second metallic plate has the second accepting hole for housing the second locking post, second metallic plate is accommodated in the second accepting groove at the end side of transparency carrier so that the second accepting hole houses the second locking post.Alternatively, the second metallic plate can utilize the binding agent smooth surface with transparency carrier at the end side of transparency carrier bonding.In such a case, it is possible to regulate the size of the first locking post of the width of the first accepting hole of the first metallic plate and a side end of transparency carrier in the way of allowing the length caused by the thermal expansion of the second metallic plate change.
Multiple light-emitting diode chip for backlight unit can include transparent substrates, the n side semiconductor layer being arranged in transparent substrates, the active layer being arranged on the semiconductor layer of n side and the p side semiconductor layer being arranged on active layer.It addition, p side semiconductor layer may include that GaN contact layer；Electronic barrier layer, is arranged between GaN contact layer and active layer；First p-type semiconductor layer, is arranged between GaN contact layer and electronic barrier layer；And second p-type semiconductor layer, it is arranged between GaN contact layer and the first p-type semiconductor layer.
The LED light lamp of further embodiment of the present utility model includes: light bulb base；At least one light emitting diode filament, electrically connects with light bulb base；And light transmission bulb, it is used for surrounding at least one light emitting diode filament.It addition, at least one light emitting diode filament includes: the transparency carrier of elongated shape, there is first surface and the second surface relative with first surface；Multiple light-emitting diode chip for backlight unit, are arranged on the first surface of transparency carrier；And first metallic plate and the second metallic plate, combine with a side end and the end side of transparency carrier respectively.And then, transparency carrier includes the first locking post of the first accepting groove for housing the first metallic plate on a described side end and the inside being positioned at the first accepting groove, first metallic plate has the first accepting hole for housing the first locking post, first metallic plate is accommodated in the first accepting groove in the end, side of transparency carrier so that the first accepting hole houses the first locking post.
It addition, light emitting diode filament can also include the binding agent making the first metallic plate bonding with transparency carrier in the inside of the first accepting groove.
LED light lamp can also include the multiple lead-foot-lines engaged with the first metallic plate and the second metallic plate.
LED light lamp can include that at least one pair of light emitting diode filament, a pair light emitting diode filament can be serially connected by a lead-foot-line.
The light emitting diode filament of another embodiment of the present utility model includes: the transparency carrier of elongated shape, has first surface and second surface, and second surface is relative with first surface；Multiple light-emitting diode chip for backlight unit, are arranged on the first surface of transparency carrier；And first metallic plate and the second metallic plate, combine with a side end and the end side of transparency carrier respectively, on the other hand, multiple light-emitting diode chip for backlight unit include transparent substrates, the n side semiconductor layer being arranged in transparent substrates, the active layer being arranged on the semiconductor layer of n side, n-electrode that the p side semiconductor layer that is arranged on active layer is connected with n side semiconductor layer and the p-electrode that is connected with p side semiconductor layer.
The LED light lamp of another embodiment of the present utility model includes above-mentioned light emitting diode filament.
Utility model effect
According to this utility model, using the teaching of the invention it is possible to provide transparency carrier can be used to discharge the LED light lamp of light to wide angle of pointing to and can be used in the light emitting diode filament of above-mentioned LED light lamp as existing bulb.Additionally, transparency carrier is made to combine with multiple metallic plates, it is thus possible to power externally to multiple light-emitting diode chip for backlight unit, and then the attachment structure of modifiable transparency carrier and metallic plate can be provided, even if thus use for a long time in LED light lamp, it is also possible to prevent light emitting diode filament that metallic plate easily separates from transparency carrier and there is its LED light lamp.It is possible to provide and both embody the light release characteristics such as existing bulb, there is again long-life and the LED light lamp of specular removal rate.
Accompanying drawing explanation
Fig. 1 is the brief front view of the LED light lamp for an embodiment of the present utility model is described.
Fig. 2 is the brief top view of the light emitting diode filament for an embodiment of the present utility model is described.
Fig. 3 (a) and Fig. 3 (b) is the enlarged partial cross section of the light emitting diode filament of an embodiment of the present utility model.
Fig. 4 is the amplification stereogram of a side end of the light emitting diode filament illustrating an embodiment of the present utility model.
Fig. 5 is the amplification view of a side end of the light emitting diode filament illustrating an embodiment of the present utility model.
Fig. 6 is the top view of the light-emitting diode chip for backlight unit being installed on light emitting diode filament of an embodiment of the present utility model.
Fig. 7 is the sectional view of the intercepting line A-A intercepting along Fig. 6.
Fig. 8 is the brief sectional view of the stepped construction of the light-emitting diode chip for backlight unit for an embodiment of the present utility model is described.
Fig. 9 is the brief top view of another embodiment for light-emitting diode chip for backlight unit is described.
Detailed description of the invention
Hereinafter, referring to the drawings multiple embodiments of the present utility model are described in detail.Multiple embodiments explained below are in order to fully transmit thought of the present utility model to this utility model person of an ordinary skill in the technical field and provide as example.Therefore, this utility model can be presented as other form to be not limited to multiple embodiments of the following stated.Further, in the accompanying drawings, for convenience, the width of element, length, thickness etc. can be showed in an exaggerated manner.And, in the case of one element of record is positioned at " top " or " top " of another element, not only include that each several part is positioned at " the positive top " or " surface " of another part, but also be included in the situation also between each element and another element with other element.Throughout the specification, identical reference represents identical element.
Fig. 1 is the brief front view of the LED light lamp for an embodiment of the present utility model is described.
With reference to Fig. 1, LED light lamp includes light bulb base 10, central rods 20, lower leg line 30, upper leg line 40, light emitting diode filament 50 and light transmission bulb 60.
The electrode structure that light bulb base 10 has with existing bulb (light bulb) is used electrode structure is identical.Furthermore it is possible to be built-in with the passive and active component of such as ac/dc (AC/DC) transducer etc. in the inside of light bulb base 10.
Owing to light bulb base 10 has the electrode structure identical with the electrode structure of existing bulb, the LED light lamp making this utility model embodiment can use existing socket, therefore, it can save the setup cost of the additional facilities caused by the use of LED light lamp.
Central rods 20 are fixed on light bulb base 10, and are arranged at the central authorities of LED light lamp.Central rods 20 can include supporting part, column sections and upper end.Central rods 20 are used for supporting multiple light emitting diode filament 50, therefore can be formed by such as glass.
Lower leg line 30 makes light bulb base 10 and light emitting diode filament 50 electrically connect.Lower leg line 30 engages with the lower side end of light emitting diode filament 50.Each light emitting diode filament 50 connects lower leg line 30, and these lower leg lines 30 are divided into two groups, and are connected with two electrodes of light bulb base 10 respectively.
On the other hand, upper leg line 40 engages with the upper side end of light emitting diode filament 50.One upper leg line 40 can make a pair light emitting diode filament 50 be connected.In the present embodiment, it is shown that two pairs of light emitting diode filaments 50, and two upper leg lines 40 make two pairs of light emitting diode filaments 50 connect.But, this utility model is not limited thereto, it is also possible to be provided with the two or three pairs of above light emitting diode filaments 50 that upper leg line 40 connects respectively.
Light transmission bulb 60 around light emitting diode filament 50 and separates with external environment condition.Light transmission bulb 60 can be formed by glass or plastics.Light transmission bulb 60 can have various shape, it is also possible to has the shape identical with existing bulb.
On the other hand, light emitting diode filament 50 is electrically connected with light bulb base 10 by lower leg line 30 and upper leg line 40.With reference to Fig. 2 to Fig. 5, the structure of light emitting diode filament 50 will be described in detail.
Fig. 2 is the brief top view of the light emitting diode filament for an embodiment of the present utility model is described, Fig. 3 (a) and Fig. 3 (b) is the enlarged partial cross section of the light emitting diode filament of an embodiment of the present utility model, Fig. 4 is the amplification stereogram of a side end of the light emitting diode filament illustrating an embodiment of the present utility model, and Fig. 5 is the amplification view of a side end of the light emitting diode filament illustrating an embodiment of the present utility model.
First, with reference to Fig. 2, Fig. 3 (a) and Fig. 3 (b), light emitting diode filament 50 can include transparency carrier 51, light-emitting diode chip for backlight unit 53, bonding line 54, encapsulant 55 and the first metallic plate 56 and the second metallic plate 58.Furthermore it is possible to be provided with binding agent 52 (Fig. 3 (a) and Fig. 3 (b)) between light-emitting diode chip for backlight unit 53 and transparency carrier 51, binding agent 52 is used for making light-emitting diode chip for backlight unit 53 bonding with transparency carrier 51.
Transparency carrier 51 has the elongated shape of bar (bar) etc.Transparency carrier 51 can also have first surface and second surface, and second surface is relative with first surface.Transparency carrier 51 can be formed by sapphire, quartz (quartz) or glass etc..
Multiple light-emitting diode chip for backlight unit 53 are arranged on transparency carrier 51.Such as, multiple light-emitting diode chip for backlight unit 53 can be arranged on the first surface of transparency carrier 51, it is also possible to be arranged at first surface and second surface two-sided on.Multiple light-emitting diode chip for backlight unit 53 both can utilize again binding agent 52 bonding with the top of transparency carrier 51 to utilize wafer bonding techniques bonding with the top of transparency carrier 51 in adhesive-free mode.In this case, binding agent 52 uses clear binder, and in a particular embodiment, can comprise fluorophor or quantum dot equiwavelength's transformational substance in binding agent 52.
On the other hand, multiple bonding lines 54 electrically connect with multiple light-emitting diode chip for backlight unit 53.As it can be seen, multiple light-emitting diode chip for backlight unit 53 can be connected by multiple bonding lines 54.The upper leg line 40 of Fig. 1 can make a pair light emitting diode filament 50 connected by this way be serially connected.On the other hand, the light-emitting diode chip for backlight unit 53 being arranged at both side ends electrically connects with the first metallic plate 56 and the second metallic plate 58 respectively.These light-emitting diode chip for backlight unit 53 can also be electrically connected with the first metallic plate 56 and the second metallic plate 58 by bonding line 54.
Encapsulant 55 covers multiple light-emitting diode chip for backlight unit 53, and covers multiple bonding line 54.But, the multiple bonding lines 54 for connecting luminous diode chip 53 and the first metallic plate 56 and the second metallic plate 58 partly can be covered by encapsulant 55.Encapsulant 55 can cover multiple light-emitting diode chip for backlight unit 53 (Fig. 3 (a)) on the first surface of transparency carrier 51, but being not limited thereto, encapsulant 55 can cover first surface and the second surface (Fig. 3 (b)) of transparency carrier 51.
First metallic plate 56 and the second metallic plate 58 combine with transparency carrier 51.First metallic plate 56 and the second metallic plate 58 can combine with transparency carrier 51 in the same way but it also may combine with transparency carrier 51 by the way of different.Such as, the first metallic plate 56 and the second metallic plate 58 can be all to combine with transparency carrier in the way of following.On the contrary, one (first) metallic plate 56 can by following new by the way of combine with transparency carrier 51, another (second) metallic plate 58 can be by existing mode, i.e. utilize the mode on the binding agent smooth surface and metallic plate to make transparency carrier 51 to combine.Below, although the combination to the first metallic plate 56 and transparency carrier 51 illustrates, but this is readily adaptable for use in the second metallic plate 58.
With reference to Fig. 4 and Fig. 5, the side end at transparency carrier 51 is formed with accepting groove 51a.As it can be seen, accepting groove 51a can have the structure that three sides are blocked and a side is opened.The degree of depth of accepting groove 51a is not particularly limited.But, in order to make the connection of bonding line 54 become easy, and for the structural stability of transparency carrier 51, it is preferable that the degree of depth of accepting groove 51a is less than the thickness of the first metallic plate 56.If it addition, accepting groove 51a is the most shallow, then it is difficult to obtain the effect forming accepting groove 51a, it is therefore preferred that more than the 1/2 of the thickness that the degree of depth of accepting groove 51a is the first metallic plate 56.
On the other hand, it is prominent from the bottom of accepting groove 51a that transparency carrier 51 can include engaging post 51b, locking post 51b.Locking post 51b may be located at the middle body of accepting groove 51a.
First metallic plate 56 has the accepting hole 56a for housing locking post 51b at a side end.Locking post 51b is received hole 56a and houses.The width of accepting hole 56a can be more than the width of locking post 51b.Thus, because of heat can not be affected by locking post 51b and carry out expanding and shrinking in the case of expansion or shrinkage at the first metallic plate 56.Can consider that the increase of the temperature in light transmission bulb 60 and the thermal coefficient of expansion etc. of the first metallic plate 56 regulate the size of accepting hole 56a.
On the other hand, the first metallic plate 56 can be bonding with the bottom of accepting groove 51a by binding agent 57.Here, binding agent 57 need not have light transmission, accordingly it is also possible to it is the binding agent containing metals such as Ag slurries.Thus, it is possible to the mode similar with the thermal coefficient of expansion regulating the first metallic plate 56 regulates the thermal coefficient of expansion of binding agent 57.
Although here, illustrate the combination of the first metallic plate 56 and transparency carrier 51, but this combination can be equally applicable to the second metallic plate 58 and the combination of transparency carrier 51.But, this utility model is not limited thereto, and the second metallic plate 58 can be bonding by the smooth surface of binding agent and transparency carrier 51, not bonding with accepting groove 51a.In such a case, it is possible to consider the expansion of the second metallic plate 58 and shrink the size of the accepting hole 56a designing locking post 51b and the first metallic plate 56.
On the other hand, as described with reference to fig. 1, the one end of light emitting diode filament 50 is connected with lower leg line 30, and the other end is connected with upper leg line 40.Now, the first metallic plate 56 and the second metallic plate 58 can pass through scolding tin, welding engages with lower leg line 30 and upper leg line 40 respectively.
It addition, lower leg line 30 and upper leg line 40 can have elasticity, therefore, when light emitting diode filament 50 expansion or shrinkage because of heat, lower leg line 30 and upper leg line 40 can also bend.Therefore, in embodiment of the present utility model, can be by using locking post 51b and accepting hole 56a and multiple lead-foot-line (such as, lower leg line 30 and upper leg line 40) elasticity make expansion and the contraction of light emitting diode filament 50, therefore, the stability of LED light lamp is improved.
Fig. 6 is the top view of the light-emitting diode chip for backlight unit 53 being installed on light emitting diode filament of an embodiment of the present utility model, Fig. 7 is the sectional view of the intercepting line A-A intercepting along Fig. 6, and Fig. 8 is the brief sectional view of the stepped construction of the light-emitting diode chip for backlight unit for an embodiment of the present utility model is described.
First, with reference to Fig. 6 and Fig. 7, light-emitting diode chip for backlight unit 53 includes growth substrate (such as, transparent substrates) 110, n side semiconductor layer 120, active layer 130, p side semiconductor layer 140, transparency electrode 150, n-electrode 160 and p-electrode 170.
Growth substrate 110, as being suitable for making the substrate of gallium nitride based semiconductor layer growth, as long as the substrate of the light generated at active layer 130 for transmission, is not particularly limited.Such as, growth substrate 110 can be sapphire substrate, gallium nitride base board, aluminium nitride substrate etc., it is particularly possible to for realizing the sapphire substrate of patterning.Fig. 7 illustrates the sapphire substrate realizing patterning, and growth substrate 110 is provided with multiple protuberance 115 on top.
Growth substrate 110 is formed and includes n side semiconductor layer 120, the semiconductor stacked structure of active layer 130 and p side semiconductor layer 140, and for semiconductor stacked structure, will be described in detail with reference to Fig. 8 in content described later.
Transparency electrode 150 is arranged on p side semiconductor layer 140, and contacts with p side semiconductor layer 140.The light that transparency electrode 150 generates in active layer 130 for transmission.Transparency electrode 150 can be formed by transparent metals such as transparent oxide films or Ni/Au such as tin indium oxide (ITO, indium-tin-oxide), ZnO.
On the other hand, the part removing p side semiconductor layer 140 and active layer 130 exposes n side semiconductor layer 120.N-electrode 160 is formed on the n side semiconductor layer 120 of exposure, and electrically connects with n side semiconductor layer 120.N-electrode 160 can be formed, for example, it is possible to formed by Ti/Al by the material carrying out Ohmic contact with n side semiconductor layer 120.
P-electrode 170 is formed in transparency electrode 150.A part for transparency electrode 150 can have the peristome for making p side semiconductor layer 140 expose, and p-electrode 170 can be contacted with p side semiconductor layer 140 by the peristome being formed in transparency electrode 150.P-electrode 170 can include reflecting layer, and reflecting layer is for reflecting the light from active layer 130 incidence.Such as, p-electrode 170 can be formed by Al/Ti/Pt/Au.
On the other hand, extension 175 can extend towards n-electrode 160 from p-electrode 170.Extension 175 can utilize the material identical with p-electrode 170 together to be formed with p-electrode 170.
With reference to Fig. 8, as it has been described above, the semiconductor stacked structure being arranged on growth substrate 110 includes n side semiconductor layer 120, active layer 130 and p side semiconductor layer 140.Semiconductor stacked structure described herein can be formed by gallium nitride based semiconductor layer, it is possible to utilizes metal organic chemical vapor deposition or hydride gas-phase epitaxy etc. to grow on growth substrate 110.
N side semiconductor layer 120 can be single or multiple lift structure.Such as, n side semiconductor layer 120 can include cushion 121, n-contact layer 123 and intermediate layer 125.Cushion 121 can be formed by GaN, in the case of the dissimilar substrate that growth substrate 110 is sapphire substrate etc, for reducing the crystal defect caused by the lattice mismatch between substrate and semiconductor layer.
N-contact layer 123, as the layer contacted with n-electrode 160, is the layer doped with p-type impurity such as Si.N-contact layer 123 can be formed by GaN, can include the area with high mercury by Si and the alternately laminated modulate-doped layer of low concentration region.
On the other hand, intermediate layer 125 can be arranged between n-contact layer 123 and active layer 130 for anti-electrostatic-discharge or in order to contribute to the dispersion of the electronics in n-contact layer 123.Such as, intermediate layer 125 can be formed by constituent mutually different gallium nitride based semiconductor layer is alternately laminated.For example, it is possible to stacking InGaN/GaN forms intermediate layer 125 repeatedly.Although it is not shown, but the single InGaN layer in intermediate layer 125 or thickness can be arranged between intermediate layer 125 and active layer 130 more than the InGaN layer of GaN layer or GaN layer.
On the other hand, active layer 130 can be single quantum or multi-quantum pit structure.Especially, active layer 130 can be the multi-quantum pit structure alternately laminated by barrier layer and well layer, thus can improve internal quantum.
P side semiconductor layer 140 can include electronic barrier layer the 141, first p-type semiconductor layer the 143, second p-type semiconductor layer 145 and GaN contact layer 147.
Electronic barrier layer 141 is arranged on active layer 130.Electronic barrier layer 141 lives electronics at active layer 130 inner ring, thus improves in conjunction with rate.Electronic barrier layer 141 can be formed by AlGaN or AlInGaN.
GaN contact layer 147 is the layer doped with n-type impurity such as Mg, and transparency electrode 150 electrically connects with GaN contact layer 147.
On the other hand, the first p-type semiconductor layer 143 can be arranged between GaN contact layer 147 and electronic barrier layer 141, it is possible to by AlxInyGa1-x-yN shell (wherein, 0 ＜ x ＜ 1,0≤y ＜ 1, x+y ＜ 1) is formed.It addition, the second p-type semiconductor layer 145 can be arranged between GaN contact layer 147 and the first p-type semiconductor layer 143, it is possible to by AluInvGa1-u-vN shell (wherein, 0 ＜ u ＜ 1,0≤v ＜ 1, u+v ＜ 1, x≤u, y≤v) formed.
The content of the Al in the second p-type semiconductor layer 145 content more than the Al in the first p-type semiconductor layer 143, therefore, contributes to the dispersion of electric current in GaN contact layer 147.In several embodiments, the content of the Al in the second p-type semiconductor layer 145 content more than the Al in electronic barrier layer 141.It addition, the second p-type semiconductor layer 145 can comprise In, and comprise the In relatively larger than the first p-type semiconductor layer 143.By together comprising Al and In, it is possible to regulation lattice paprmeter such that it is able to improve the lattice quality of GaN contact layer 147.
Light-emitting diode chip for backlight unit can discharge the light of ultraviolet or blue region, and the material for transformation of wave length included by encapsulant 55 can be utilized to embody white light.
Fig. 9 is the brief top view of another embodiment for light-emitting diode chip for backlight unit is described.
With reference to Fig. 9, the light-emitting diode chip for backlight unit in the present embodiment is substantially similar to reference to the light-emitting diode chip for backlight unit described by Fig. 6, but there are differences at the aspect that arranges of n-electrode 160, p-electrode 170 and extension 165,175.The explanation to same case is omitted in order to avoid repeat specification.
In the present embodiment, n-electrode 160 is arranged near corner angle of the growth substrate 110 of rectangular shape, and extension 165 extends along a lateral edges of growth substrate 110.On the other hand, the diagonal corner angle side of the corner angle that p-electrode 170 deflection is provided with n-electrode 160 is arranged, and extension 175 is partial to the opposite side edge side relative with a described lateral edges and is extended from p-electrode 170.Extension 165 substantially can be parallel with extension 175.
Above, although various embodiments of the present utility model is illustrated, but this utility model is not limited to above-mentioned various embodiments and feature, it is possible in the range of the technological thought without departing from protection domain of the present utility model, carry out various deformation and change.
Claims (17)
1. a light emitting diode filament, it is characterised in that described light emitting diode filament includes:
The transparency carrier of elongated shape, has first surface and second surface, and described second surface is with described
First surface is relative；
Multiple light-emitting diode chip for backlight unit, are arranged on the described first surface of described transparency carrier；And
First metallic plate and the second metallic plate, respectively with a side end and another side of described transparency carrier
Portion combines,
Described transparency carrier includes the first receipts for housing described first metallic plate on a described side end
Tank engages post with the first of the inside being positioned at described first accepting groove,
Described first metallic plate has the first accepting hole for housing described first locking post,
Described first metallic plate is accommodated in described first and receives in the end, described side of described transparency carrier
In tank so that described first accepting hole houses described first locking post.
Light emitting diode filament the most according to claim 1, it is characterised in that described light-emitting diodes
Spot silk also includes making described first metallic plate in the inside of described first accepting groove and described transparency carrier phase
The binding agent of bonding.
Light emitting diode filament the most according to claim 1, it is characterised in that described first metal
The width of described first accepting hole of plate is more than the width of described first locking post.
Light emitting diode filament the most according to claim 1, it is characterised in that described light-emitting diodes
Spot silk also includes the multiple bonding lines electrically connected with the plurality of light-emitting diode chip for backlight unit.
Light emitting diode filament the most according to claim 4, it is characterised in that the plurality of luminescence
Diode chip for backlight unit is serially connected.
Light emitting diode filament the most according to claim 1, it is characterised in that described light-emitting diodes
Spot silk also includes the encapsulant for covering the plurality of light-emitting diode chip for backlight unit,
Described encapsulant includes material for transformation of wave length.
Light emitting diode filament the most according to claim 6, it is characterised in that described encapsulant
It is arranged on the described first surface of described transparency carrier.
Light emitting diode filament the most according to claim 6, it is characterised in that described encapsulant
Surround the described first surface of described transparency carrier and described second surface.
Light emitting diode filament the most according to claim 6, it is characterised in that described light-emitting diodes
Spot silk also includes that bonding line, described bonding line make to be contained in described the of the inside of described first accepting groove
One metallic plate electrically connects with a light-emitting diode chip for backlight unit in the plurality of light-emitting diode chip for backlight unit,
Described material for transformation of wave length covers a part for described bonding line.
10. according to the light emitting diode filament described in any one claim in claim 1 to 9,
It is characterized in that,
Described transparency carrier also include in described end side, house described second metallic plate
Two accepting grooves engage post with the second of the inside being positioned at described second accepting groove,
Described second metallic plate has the second accepting hole for housing described second locking post,
Described second metallic plate is accommodated in described second at the described end side of described transparency carrier
In accepting groove so that described second accepting hole houses described second locking post.
11. according to the light emitting diode filament described in any one claim in claim 1 to 9,
It is characterized in that, each light-emitting diode chip for backlight unit in the plurality of light-emitting diode chip for backlight unit includes:
Transparent substrates；
N side semiconductor layer, is arranged in described transparent substrates；
Active layer, is arranged on the semiconductor layer of described n side；And
P side semiconductor layer, is arranged on described active layer,
Described p side semiconductor layer includes:
GaN contact layer；
Electronic barrier layer, is arranged between described GaN contact layer and described active layer；
First p-type semiconductor layer, is arranged between described GaN contact layer and described electronic barrier layer；
And
Second p-type semiconductor layer, is arranged at described GaN contact layer and described first p-type semiconductor
Between Ceng.
12. 1 kinds of LED light lamp, it is characterised in that described LED light lamp includes:
Light bulb base；
At least one light emitting diode filament, electrically connects with described light bulb base；And
Light transmission bulb, is used for surrounding at least one light emitting diode filament described,
At least one light emitting diode filament described includes:
The transparency carrier of elongated shape, has first surface and relative with described first surface second
Surface；
Multiple light-emitting diode chip for backlight unit, are arranged on the described first surface of described transparency carrier；With
And
First metallic plate and the second metallic plate, respectively with a side end of described transparency carrier and another
Side end combines,
Described transparency carrier include on a described side end, house described first metallic plate
One accepting groove engages post with the first of the inside being positioned at described first accepting groove,
Described first metallic plate has the first accepting hole for housing described first locking post,
Described first metallic plate is accommodated in described in the end, described side of described transparency carrier
In one accepting groove so that described first accepting hole houses described first locking post.
13. LED light lamp according to claim 12, it is characterised in that described light-emitting diodes
Spot silk also includes making described first metallic plate in the inside of described first accepting groove and described transparency carrier phase
The binding agent of bonding.
14. LED light lamp according to claim 12, it is characterised in that described light-emitting diodes
Spot also includes the multiple lead-foot-lines engaged with described first metallic plate and described second metallic plate.
15. LED light lamp according to claim 12, it is characterised in that described light-emitting diodes
Spot includes at least one pair of light emitting diode filament,
A pair light emitting diode filament is serially connected by a lead-foot-line.
16. 1 kinds of light emitting diode filaments, it is characterised in that described light emitting diode filament includes:
The transparency carrier of elongated shape, has first surface and second surface, and described second surface is with described
First surface is relative；
Multiple light-emitting diode chip for backlight unit, are arranged on the described first surface of described transparency carrier；And
First metallic plate and the second metallic plate, respectively with a side end and another side of described transparency carrier
Portion combines,
Each light-emitting diode chip for backlight unit in the plurality of light-emitting diode chip for backlight unit includes:
Transparent substrates；
N side semiconductor layer, is arranged in described transparent substrates；
Active layer, is arranged on the semiconductor layer of described n side；
P side semiconductor layer, is arranged on described active layer；
N-electrode, is connected with described n side semiconductor layer；And
P-electrode, is connected with described p side semiconductor layer.
17. 1 kinds of LED light lamp, it is characterised in that described LED light lamp includes claim
Light emitting diode filament described in 16.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620373281.XU CN205645804U (en) | 2016-04-28 | 2016-04-28 | Emitting diode filament and have its emitting diode lamp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620373281.XU CN205645804U (en) | 2016-04-28 | 2016-04-28 | Emitting diode filament and have its emitting diode lamp |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205645804U true CN205645804U (en) | 2016-10-12 |
Family
ID=57059570
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620373281.XU Expired - Fee Related CN205645804U (en) | 2016-04-28 | 2016-04-28 | Emitting diode filament and have its emitting diode lamp |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205645804U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107394033A (en) * | 2017-07-19 | 2017-11-24 | 四川省凯林顿科技有限公司 | LED filament manufacturing process and LED filament |
| CN110678978A (en) * | 2017-11-10 | 2020-01-10 | 首尔半导体株式会社 | Light-emitting element filament |
-
2016
- 2016-04-28 CN CN201620373281.XU patent/CN205645804U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107394033A (en) * | 2017-07-19 | 2017-11-24 | 四川省凯林顿科技有限公司 | LED filament manufacturing process and LED filament |
| CN110678978A (en) * | 2017-11-10 | 2020-01-10 | 首尔半导体株式会社 | Light-emitting element filament |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102332520B (en) | Luminescent device | |
| CN102983129B (en) | Luminescent device | |
| CN103996776B (en) | Luminescent device and light emitting device package | |
| US20140239319A1 (en) | Light Emitting Device | |
| CN103107260B (en) | light emitting device | |
| US8536591B2 (en) | Light emitting device and lighting system | |
| CN102315346B (en) | Luminescent device and manufacture method thereof | |
| CN104112757B (en) | Luminescent device, light emitting device package, the manufacture method and illuminator of luminescent device | |
| CN103066172A (en) | Light emitting device | |
| US9112114B2 (en) | Light emitting device with metal electrode layer having protrusion portions | |
| EP2763194B1 (en) | Light emitting device | |
| CN102315349B (en) | Luminescent device and manufacture method thereof | |
| KR101861721B1 (en) | Light emitting device | |
| CN205645804U (en) | Emitting diode filament and have its emitting diode lamp | |
| CN102194959A (en) | Light emitting device, method of manufacturing the light emitting device, light emitting device package, and lighting unit | |
| KR20120051970A (en) | Light emitting device | |
| EP2381492B1 (en) | Light emitting device with resonant thickness of one semiconductor layer | |
| KR20120051969A (en) | Light emitting device | |
| KR102075119B1 (en) | Light emitting device | |
| KR20120088986A (en) | Light Emitting device and Light Emitting device Package | |
| KR20120019750A (en) | Light emitting device | |
| KR101714049B1 (en) | The light- | |
| KR101807105B1 (en) | Light emitting device | |
| KR20120087035A (en) | Light emitting device and light emitting device package | |
| KR20120058350A (en) | Light emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20161012 |