KR102261951B1 - Semiconductor device and semiconductor device manufacturing method - Google Patents

Abstract

The present invention improves the light output output to the outside of the semiconductor device by forming a curved surface of the wavelength conversion layer located on the upper surface of the light emitting device included in the semiconductor device in a semiconductor device applied to electronic components such as LED, In a semiconductor device and a method for manufacturing a semiconductor device, the metal layer surrounding the conversion layer is made of metal to increase the reflectance of light, and accordingly, the light emitted from the light emitting device can be output through the wavelength conversion layer located on the upper surface of the light emitting device. it's about
One problem to be solved by the present invention is to improve the light output output to the outside of the semiconductor device by forming a curved surface of the wavelength conversion layer located on the upper surface of the light emitting device.
A semiconductor device according to the present invention includes a light emitting device; a wavelength conversion layer surrounding the light emitting device; and a metal layer surrounding the wavelength conversion layer positioned on the side surface of the light emitting device, wherein the surface of the wavelength conversion layer positioned on the upper surface of the light emitting device has a curved surface.

Description

TECHNICAL FIELD [0002] Semiconductor device and semiconductor device manufacturing method

The present invention improves the light output output to the outside of the semiconductor device by forming a curved surface on the surface of the wavelength conversion layer located on the upper surface of the light emitting device included in the semiconductor device in a semiconductor device applied to electronic components such as LED, In a semiconductor device and a method of manufacturing a semiconductor device, the metal layer surrounding the conversion layer is implemented as a metal to increase the reflectance of light, and accordingly, the light emitted from the light emitting device can be output through the wavelength conversion layer located on the upper surface of the light emitting device it's about

A light emitting diode (LED) is a compound semiconductor device that converts electric energy into light energy, and various colors can be realized by adjusting the composition ratio of the compound semiconductor.

The nitride semiconductor light emitting device has advantages of low power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps. Therefore, a light emitting diode backlight that replaces a Cold Cathode Fluorescence Lamp (CCFL) constituting the backlight of a liquid crystal display (LCD) display device, a white light emitting diode lighting device that can replace a fluorescent lamp or incandescent light bulb, and a car headlight And the application is expanding to traffic lights.

Conventionally, silicon was used as a metal layer that reflects the light emitted by the light emitting device. However, since silicon has low chemical resistance and heat resistance, there is a problem in that it is deformed due to heat output from the light emitting device.

That is, silicon has a problem in that cracks are generated due to heat and photons as the light emitting device is driven.

One problem to be solved by the present invention is to improve the light output output to the outside of the semiconductor device by forming a curved surface of the wavelength conversion layer located on the upper surface of the light emitting device.

Another problem to be solved by the present invention is to implement a metal layer surrounding the wavelength conversion layer with metal to increase the reflectance of light, and to provide a semiconductor device with high durability without damage due to heat and photons as the light emitting device is driven will do

On the other hand, the technical problems to be solved by the present invention are not limited to the above-mentioned problems, and various technical problems may be further included within the range obvious to those skilled in the art from the content to be described below.

A semiconductor device according to the present invention includes a light emitting device; a wavelength conversion layer surrounding the light emitting device; and a metal layer disposed on a lower portion of the light emitting device and a side surface and an upper portion of the wavelength conversion layer, wherein the wavelength conversion layer includes a hole exposing a pair of electrode pads positioned on the upper surface of the light emitting device.

The semiconductor device further includes a sidewall spaced apart from the light emitting device by a predetermined distance and disposed between the wavelength conversion layer and the metal layer, and the upper surface of the wavelength conversion layer is a convex curved surface or a concave curved surface.

The metal layer is in contact with the side surface and the upper surface of the wavelength conversion ring layer surrounding a part of the side surface and the upper surface of the light emitting device, and the metal layer is in contact with part or all of the upper part of the wavelength conversion layer located outside the edge of the light emitting device.

The metal layer is positioned under the light emitting device with a distance of 10 to 200 μm from the other part.

A method of manufacturing a semiconductor device includes: forming a light emitting structure to form a light emitting device on a substrate; A photoresist coating step of applying a photoresist on the light emitting structure; a light emitting device separation step of separating the substrate into a plurality of individual light emitting devices by dicing; a light emitting device arrangement step of disposing a plurality of light emitting devices at regular intervals; A sidewall arrangement step of disposing sidewalls on both sides of the light emitting device; a wavelength conversion layer forming step of dispensing a phosphor to cover a light emitting device positioned between two sidewalls to form a wavelength conversion layer; A photoresist removal step of removing the photoresist applied on the light emitting device; A reflective layer forming step of forming a reflective layer to surround the wavelength conversion layer located on the side of the light emitting device; includes

The sidewall may be hydrophobic or hydrophilic.

The surface of the wavelength conversion layer located on the upper surface of the light emitting element is a convex curved surface or a concave curved surface.

An object of the present invention is to improve the light output output to the outside of a semiconductor device by forming a curved surface of the wavelength conversion layer located on the upper surface of the light emitting device.

An object of the present invention is to provide a semiconductor device having high durability without damage due to heat and photons as the light emitting device is driven by implementing a metal layer surrounding the wavelength conversion layer with metal to increase the reflectance of light.

The effects of the present invention are not limited to the above-mentioned effects, and various effects may be further included within the range apparent to those skilled in the art from the description below.

1 is a cross-sectional view of a semiconductor device according to an embodiment of the present invention.
2A is a cross-sectional view of a semiconductor device according to another embodiment of the present invention.
2B is a cross-sectional view of a semiconductor device according to another embodiment of the present invention.
2C is a cross-sectional view of a semiconductor device according to another embodiment of the present invention.
2D is a cross-sectional view of a semiconductor device according to another embodiment of the present invention.
2E is a plan view of a semiconductor device according to another embodiment of the present invention.
FIG. 2F is a cross-sectional view of the semiconductor device of FIG. 2E taken along a direction No. 1;
FIG. 2G is a cross-sectional view of the semiconductor device of FIG. 2E taken along the second direction.
2H is a plan view of a semiconductor device according to another exemplary embodiment of the present invention.
FIG. 2I is a cross-sectional view of the semiconductor device of FIG. 2H taken in a direction 1 .
FIG. 2J is a cross-sectional view of the semiconductor device of FIG. 2H taken in the second direction.
3 is a cross-sectional view of a light emitting structure and a pair of electrode pads of the present invention.
4A is a flowchart of a method of manufacturing a semiconductor device according to an embodiment of the present invention.
4B is a flowchart of a method of manufacturing a semiconductor device according to another embodiment of the present invention.
5A to 5O are views for explaining a method of manufacturing a semiconductor device according to the present invention.

A semiconductor device and a method for manufacturing a semiconductor device according to the present invention are embodied through embodiments described with reference to the accompanying drawings. It is understood that various combinations of elements of each of the embodiments are possible within the embodiments as long as there is no contradiction between them or other mentions. Furthermore, the proposed invention may be embodied in several different forms and is not limited to the embodiments described herein.

And, when it is said that a component is "included", it means that this component is necessarily included regardless of other components, and is not intended to exclude the possibility of including other components.

In addition, throughout the specification, when it is said that a certain part is "connected" with another part, it is not only "directly connected" but also "electrically connected" with another element interposed therebetween. include Furthermore, throughout the specification, a signal means an amount of electricity such as voltage or current.

1 is a cross-sectional view of a semiconductor device according to an embodiment of the present invention.

2A is a cross-sectional view of a semiconductor device according to another embodiment of the present invention. 2B is a cross-sectional view of a semiconductor device according to another embodiment of the present invention. 2C is a cross-sectional view of a semiconductor device according to another embodiment of the present invention. 2D is a cross-sectional view of a semiconductor device according to another embodiment of the present invention. 2E is a plan view of a semiconductor device according to another embodiment of the present invention. FIG. 2F is a cross-sectional view of the semiconductor device of FIG. 2E taken along a direction No. 1; FIG. 2G is a cross-sectional view of the semiconductor device of FIG. 2E taken in the second direction. 2H is a plan view of a semiconductor device according to another exemplary embodiment of the present invention. FIG. 2I is a cross-sectional view of the semiconductor device of FIG. 2H taken in a direction 1 . FIG. 2J is a cross-sectional view of the semiconductor device of FIG. 2H taken in the second direction. 3 is a cross-sectional view of the light emitting structure 110 and a pair of electrode pads 114 and 115 of the present invention.

A semiconductor device according to the present invention includes a light emitting device 130; wavelength conversion layers 141 and 142 surrounding the light emitting device 130 ; and metal layers 151 and 152 disposed below the light emitting device 130 and on the wavelength conversion layers 141 and 142 .

The semiconductor device according to the present invention may be a light emitting diode (LED). The light emitting diode (LED) converts electricity into light using the characteristics of a compound semiconductor to send and receive signals, or as a light source. It is a kind of semiconductor device used.

Light-emitting diodes generate high-efficiency light at low voltage, which is advantageous for energy saving. In recent years, as the luminance problem, which was a limitation of light-emitting diodes, has been greatly improved, overall industries such as backlight units, electronic signs, displays, home appliances, and various automation devices. is used throughout.

Referring to FIG. 3 , the light emitting device includes a substrate 120 , a light emitting structure 110 , and a pair of electrodes and electrode pads 114 and 115 .

The substrate 120 may be an insulating or conductive substrate 120 , and may include at least one of sapphire, SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but is not limited thereto. The substrate 120 may be a material suitable for semiconductor material growth or a carrier wafer.

A micro lens array pattern may be formed on the upper surface of the substrate 120 . The microlens array pattern may be formed by directly etching the substrate 120 , or may be formed of a silicon oxide film (SiO2), a silicon nitride film (SiNx), or a metal oxide film (MgO), which are non-conductive materials, on the substrate 120 . have.

The thickness of the substrate 120 may be formed to be 150 ~ 250um. When the thickness of the substrate 120 increases, the luminous flux increases, but since the thermal conductivity of the substrate 120 is low, the thickness of the substrate 120 is formed in a range of 150 to 250 μm.

The light emitting structure 110 may include a first conductivity type semiconductor layer 111 , an active layer 112 , and a second conductivity type semiconductor layer 113 .

The light emitting device 130 may be a flip chip type LED (flip chip type), a lateral type, or a vertical type. Preferably, the light emitting device 130 is of a lateral type.

The first conductivity type semiconductor layer 111 may be doped with a first dopant. When the first conductivity-type semiconductor layer 111 is an n-type semiconductor, the first conductivity-type dopant is an n-type dopant and may include at least one of Si, Ge, Sn, and Te. The first conductivity type semiconductor layer 111 is a compound semiconductor such as group 3-5, group 2-6, for example, In _X1 Al _y1 Ga _1-x1-y1 N (0≤x1≤1, 0≤y1) ≤1, 0≤x1+y1≤1) and includes a semiconductor having a composition formula, and may include at least one of GaN, AlGaN, InGaN, and InAlGaN.

Although not shown, a buffer layer may be formed between the first conductivity type semiconductor layer 111 and the substrate 120 . The buffer layer may alleviate a lattice mismatch between the light emitting structure provided on the substrate 120 and the substrate 120 . The buffer layer may include a combination of Group 3 and Group 5 elements, or may selectively include GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN. The buffer layer may be doped with a dopant, but is not limited thereto. The buffer layer may be grown as a single crystal on the substrate 120 , and the buffer layer grown as a single crystal may improve crystallinity of the first conductivity type semiconductor layer.

The active layer 112 is disposed on the first conductivity type semiconductor layer 111 . The active layer 112 may selectively include a single quantum well, a multiple quantum well, a quantum wire structure, or a quantum dot structure, but is not limited thereto.

In the active layer 112 , electrons (or holes) injected through the first conductivity type semiconductor layer and holes (or electrons) injected through the second conductivity type semiconductor layer 113 meet to form the active layer 112 . It is a layer that emits light due to the difference in the band gap of the energy bands.

The second conductive semiconductor layer 113 is disposed on the active layer 112 .

The second conductivity type semiconductor layer 113 may be doped with a second dopant. When the second conductivity-type semiconductor layer 113 is a p-type semiconductor, the second conductivity-type dopant is a p-type dopant and may include at least one of Mg, Wn, Ca, Sr, and Ba. The second conductivity type semiconductor layer 113 is a compound semiconductor such as a group 3-5, group 2-6, etc., for example, In _x5 A1 _y2 Ga _a1-x5-y2 N (0≤x5≤1, 0≤y2). ≤1, 0≤x5+y2≤1) and may include at least one of A1InN, A1GaAs, GaP, GaAs, GaAsP, and A1GaInP.

Although the first conductivity type semiconductor layer 111 is an n-type semiconductor layer and the second conductivity type semiconductor layer 113 is a p-type semiconductor layer as an example, the description is not limited thereto. The first conductivity type semiconductor layer 111 may be a p-type semiconductor layer, and the second conductivity type semiconductor layer 113 may be an n-type semiconductor layer.

Although not shown, an electron blocking layer (EBL) may be formed between the active layer 112 and the second conductivity type semiconductor layer 113 . The electron blocking layer EBL blocks the electrons (or holes) supplied from the electron blocking and first conductivity type semiconductor layer 111 from escaping to the second conductivity type semiconductor layer 113 , thereby forming the active layer 112 within the active layer 112 . It is possible to improve the luminous efficiency by increasing the probability of recombination of electrons and holes. The energy band gap of the electron blocking layer may be larger than that of the active layer 112 or the second conductive semiconductor layer 113 .

The electron blocking layer (EBL) is _{a semiconductor material having a composition formula of In x1} A1 _y1 Ga _1-x1-y1 N (0≤x1≤1, 0≤y1≤1, 0≤x1+y1≤1), A1GaN, InGaN, InA1GaN, etc. may include one, but is not limited thereto.

The electron blocking layer (EBL) may have a superlattice structure. In the superlattice, A1GaN doped with a second conductivity type dopant may be disposed, and GaN having a different composition ratio of aluminum is formed as a layer. A plurality may be alternately disposed with each other, but is not limited thereto.

The second electrode pad 114 may be disposed on one surface of the second conductivity type semiconductor layer 113 . The first electrode pad 115 may be disposed on one surface of the first conductivity type semiconductor layer 111 .

The light emitting structure 110 may further include a glass electrode (not shown) on the upper surface of the second conductive semiconductor layer 113 . The glass electrode includes indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tinoxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), and AZO. may include at least one of (aluminum zinc oxide), antimony tinoxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, It is not limited to these materials.

In addition, the first electrode pad 115 and the second electrode pad 114 are In, Co, Si, Ge, Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, Ir, W, It may further include a metal selected from Ti, Ag, Cr, Mo, Nb, Al, Ni, Cu, and WTi.

The wavelength conversion layers 141 and 142 surround the light emitting device 130 . The wavelength conversion layers 141 and 142 surround the top and side surfaces of the light emitting device 130 except for a pair of electrode pads 114 and 115 located on the top surface of the light emitting device 130 . When the light emitting device 130 has a flip-chip shape, the electrode pad is located on the lower surface of the light emitting device 130 . That is, when the light emitting device 130 has a flip-chip shape, the wavelength conversion layers 141 and 142 surround both the top and side surfaces of the light emitting device 130 .

The wavelength conversion layer is not positioned on the electrodes 114 and 115 , and the electrodes 114 and 115 and metal layers 151 and 152 to be described later may be connected to each other.

The wavelength conversion layers 141 and 142 may be made of glass. The wavelength conversion layers 141 and 142 may be formed of SiO _x (x=1 to 2).

The wavelength conversion material of the wavelength conversion layers 141 and 142 may absorb and mix light emitted from the light emitting device to provide white light. The wavelength conversion material may be a phosphor.

The phosphor may be one of a sulfide-based, an oxide-based, or a nitride-based phosphor, and the type of the phosphor is not limited. When the light emitting device emits light in an ultraviolet wavelength band, a green phosphor, a blue phosphor, and a red phosphor may be selected as the phosphor. When the light emitting device emits light in a blue wavelength band, a yellow phosphor or a combination of a red phosphor and a green phosphor, or a combination of a yellow phosphor, a red phosphor, and a green phosphor may be selected as the phosphor.

The metal layers 151 and 152 include a first metal layer 152 and a second metal layer 151 .

The metal layers 151 and 152 are disposed under the light emitting device, on the side surface, and on the wavelength conversion layer. Among the light emitted from the light emitting device 130 in all directions, the light emitted to the metal layers 151 and 152 is reflected by the metal layers 151 and 152 and is output through the wavelength conversion layer 143 located on the upper surface.

The metal layers 151 and 152 are in contact with the lower surface, the side surface and the upper surface of the wavelength conversion ring layer. The metal layers 151 and 152 are in contact with the lower surface, the side surface and the upper surface of the wavelength conversion ring layer surrounding a part of the side surface and the upper surface of the light emitting device.

The first metal layer 152 is in contact with the lower surface, the side surface and the upper surface of the wavelength conversion ring layer surrounding a portion of the left surface and the upper surface of the light emitting device. The second metal layer 151 is in contact with the lower surface, the side surface and the upper surface of the wavelength conversion ring layer surrounding a portion of the right surface and the upper surface of the light emitting device.

The wavelength conversion layers 141 and 142 included in the semiconductor device shown in FIG. 1 surround the light emitting device 130 and have a flat top surface. In this case, the wavelength conversion layers 141 and 142 may be formed through dispensing or an SOG process.

The semiconductor device further includes a sidewall spaced apart from the light emitting device by a predetermined distance and disposed between the wavelength conversion layer and the metal layer, and the upper surface of the wavelength conversion layer is a convex curved surface or a concave curved surface.

5 (a1) and (b1) show an embodiment in which a sidewall is present, the component of which is white silicon. White silicone is hydrophobic or hydrophilic. The sidewalls made of white silicon are not removed after making the upper surfaces of the wavelength conversion layers 141 and 142 curved.

5 (a2) and (b2) show an embodiment in which no sidewall is present. In an embodiment in which sidewalls are not present, photoresist pillars are used in the process of forming the upper surfaces of the wavelength conversion layers 141 and 142 into a curved surface. The photoresist post is removed after use.

That is, the sidewall may be white silicon or photoresist. A sidewall made of white silicon is disposed between the wavelength conversion layer and the metal layer as shown in FIGS. 5 (a1) and (b1). The photoresist sidewall is removed after forming the upper surfaces of the wavelength conversion layers 141 and 142 to be curved as shown in FIGS. 5 ( a2 ) and ( b2 ), and thus does not exist.

Surfaces of the wavelength conversion layers 141 and 142 positioned on the upper surface of the light emitting device 130 are curved.

As shown in FIGS. 2A and 2B , upper surfaces of the wavelength conversion layers 141 and 142 may be formed in a convex shape.

Since the wavelength conversion layers 141 and 142 are hydrophilic, when the sidewalls are hydrophobic, the upper surfaces of the wavelength conversion layers 141 and 142, which will be described later, are formed in a concave shape. Since the wavelength conversion layers 141 and 142 before being cured in the process of the semiconductor device are hydrophilic, when the sidewalls are hydrophobic, the upper surfaces of the wavelength conversion layers 141 and 142 are cured in a convex shape.

As shown in FIGS. 2C and 2D , the upper surfaces of the wavelength conversion layers 141 and 142 may be formed in a concave shape.

Since the wavelength conversion layers 141 and 142 are hydrophilic, when the sidewalls are hydrophilic, the upper surfaces of the wavelength conversion layers 141 and 142, which will be described later, are formed in a convex shape. Since the wavelength conversion layers 141 and 142 before being cured in the process of the semiconductor device are hydrophilic, when the sidewalls are hydrophilic, the upper surfaces of the wavelength conversion layers 141 and 142 are cured in a concave shape.

As the shape of the upper surfaces of the wavelength conversion layers 141 and 142 surrounding the light emitting device 130 becomes concave or convex, internal reflection is reduced, and the light output of the semiconductor device is improved.

The wavelength conversion layers 141 and 142 include holes exposing a pair of electrode pads 114 and 115 positioned on the upper surface of the light emitting device 130 .

The wavelength conversion layers 141 and 142 include holes. The wavelength conversion layers 141 and 142 include holes exposing top surfaces of the electrode pads 114 and 115 . The metal layers 151 and 152 are electrically connected to the exposed electrode pads 114 and 115 extending along the lower portion of the light emitting device 130 , the side surfaces of the wavelength conversion layers 141 and 142 , the upper portion, and the inside of the hole.

The metal layers 151 and 152 are in contact with the wavelength conversion layer 142 surrounding a part of the side surface and the upper surface of the light emitting device 130,

FIG. 2E shows a metal layer 150 surrounding the side and top surfaces of the wavelength conversion ring layer 140 surrounding a portion of the side and top surfaces of the light emitting device 130 . The metal layers 151 and 152 surround the side and top surfaces of the wavelength conversion ring layer 140 surrounding a portion of the side and top surfaces of the light emitting device 130 , and electrically with the first electrode pad 115 and the second electrode pad 114 . Connected.

In order to prevent an electrical short, the first metal layer 152 and the second metal layer 151 are physically separated, and thus a part of the wavelength conversion layer 140 is exposed. White silicone or resin may be positioned on the exposed portion of the wavelength conversion layer 140 to completely cover the wavelength conversion layer 140 .

In FIG. 2E , a portion of the wavelength conversion layer 140 , the first electrode pad 115 , and the second electrode pad 114 positioned outside the edge of the light emitting device 130 are covered by the metal layer 150 .

In FIG. 2E , the first electrode 117 and the second electrode 116 are covered by the wavelength conversion layer 140 located inside the edge of the light emitting device 130 . FIG. 2F is a cross-sectional view of the semiconductor device of FIG. 2E cut in the first direction, and FIG. 2G is a cross-sectional view of the semiconductor device of FIG. 2E cut along the second direction.

FIG. 2H shows a metal layer 150 surrounding the side and top surfaces of the wavelength conversion ring layer 140 surrounding a portion of the side and top surfaces of the light emitting device 130 . The metal layers 151 and 152 surround a portion of the wavelength conversion layer 140 positioned outside the edge of the light emitting device 130 and are electrically connected to the first electrode pad 115 and the second electrode pad 114 . That is, the metal layers 151 and 152 are positioned on a path connecting the electrode pads 114 and 115 from the lower portion of the light emitting device 130 to surround only a portion of the wavelength conversion layer 140 .

In FIG. 2H , a portion of the wavelength conversion layer 140 , the first electrode pad 115 , and the second electrode pad 114 positioned outside the edge of the light emitting device 130 are covered by the metal layers 151 and 152 .

In FIG. 2H , the first electrode 117 and the second electrode 116 are covered by the wavelength conversion layer 140 located inside the edge of the light emitting device 130 . The upper surface of the light emitting device 130 indicated by the dashed-dotted line in FIG. 2H is covered by the wavelength conversion layer 140 and the metal layers 151 and 152 . FIG. 2I is a cross-sectional view of the semiconductor device of FIG. 2H taken in a direction 1 , and FIG. 2J is a cross-sectional view of the semiconductor device of FIG. 2H cut in a second direction.

The metal layers 151 and 152 are metal. The metal layers 151 and 152 include at least one of Cr, Al, Ni, and Au. The metal may include Cr, Al, Ni, and Au.

Cr is used to improve adhesion to the wavelength conversion layers 141 and 142 . That is, Cr is present in a portion in contact with the wavelength conversion layers 141 and 142 that are the edges of the metal layers 151 and 152 . The thickness of Cr may be 20 Å. Ti may be used instead of Cr.

Al is used to sufficiently secure the reflectivity of the metal layers 151 and 152 and is located adjacent to Cr. Al is formed to a thickness of 1000 Å or more and 3000 Å or less.

Ni is used to prevent oxidation of Al and is located adjacent to Al. Ni is formed to a thickness of 3000 Å or less.

Au is used to apply a voltage to the light emitting device 130 , is located adjacent to Ni, and is located at the edges of the metal layers 151 and 152 . Au is formed to a thickness of 7000 Å or less.

The metal layers 151 and 152 reflect the light emitted by the light emitting device 130, but are connected to a pair of electrode pads 114 and 115 included in the light emitting device 130 to supply current.

The metal layers 151 and 152 are positioned under the light emitting device with a portion 151 separated from the other portion 152 by a distance of 10 to 200 μm. The second metal layer 151 and the first metal layer 152 positioned under the substrate 120 are disposed with an interval of 10 μm to 200 μm. As the distance is narrower, the reflectance of light is improved, but the possibility of a short circuit increases because the first metal layer 151 and the second metal layer 152 are electrically connected. Therefore, the two metal layers 151 and 152 are located as close as possible in a range where a short circuit does not occur.

4A is a flowchart of a method of manufacturing a semiconductor device according to an embodiment of the present invention.

4B is a flowchart of a method of manufacturing a semiconductor device according to another embodiment of the present invention.

5A to 5O are views for explaining a method of manufacturing a semiconductor device according to the present invention.

The method for manufacturing a semiconductor device according to FIG. 4A includes a light emitting structure 110 forming step (S610) of forming a light emitting device 130 water on a substrate 120; A photoresist 160 coating step of applying a photoresist 160 on the light emitting structure 110 (S620); a light emitting device 130 separating step (S630) of dicing the substrate 120 on which the light emitting structure 110 is positioned to separate the plurality of individual light emitting devices 130; A plurality of light emitting devices 130 are arranged at regular intervals, the light emitting device 130 disposing step (S640); A photoresist pillar 170 disposing step (S650) of disposing the photoresist pillar 170 on both sides of the light emitting device 130; wavelength conversion layers 141 and 142 forming wavelength conversion layers 141 and 142 by dispensing a phosphor to cover the light emitting device 130 positioned between the two photoresist pillars 170 ( S660 ); A photoresist 160 removal step of removing the photoresist 160 applied on the light emitting device 130 (S670); a reflective layer forming step of forming metal layers 151 and 152 to surround the wavelength conversion layers 141 and 142 positioned on the side surface of the light emitting device 130 (S680); includes

Unlike FIG. 4A, FIG. 4B further includes an electrode post arrangement step (S720) instead of the photoresist application step. This will be described later.

5A is a view for explaining the steps of forming the light emitting structure 110 (S610, S710) according to the present invention.

In the step of forming the light emitting structure 110 , the light emitting device 130 is formed on the substrate 120 .

The substrate 120 may be an insulating or conductive substrate 120 , and may include at least one of sapphire, SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but is not limited thereto. The substrate 120 may be a material suitable for semiconductor material growth or a carrier wafer.

A micro lens array pattern may be formed on the upper surface of the substrate 120 . The microlens array pattern may be formed by directly etching the substrate 120 , or may be formed of a silicon oxide film (SiO2), a silicon nitride film (SiNx), or a metal oxide film (MgO), which are non-conductive materials, on the substrate 120 . have.

The thickness of the substrate 120 may be formed to be 150 ~ 250um. When the thickness of the substrate 120 increases, the luminous flux increases, but since the thermal conductivity of the substrate 120 is low, the thickness of the substrate 120 is formed to be 150 to 250 μm.

A second reflective layer may be positioned under the substrate 120 to improve reflectivity. The second reflective layer is a Diffuse Brag's Reflector (DBR) or a metal reflector.

The light emitting structure 110 may include a first conductivity type semiconductor layer 111 , an active layer 112 , and a second conductivity type semiconductor layer 113 . That is, the first conductivity type semiconductor layer 111 , the active layer 112 , and the second conductivity type semiconductor layer 113 are sequentially stacked on the substrate 120 .

5B is a view for explaining the step (S620) of applying the photoresist 160 according to the present invention.

In the step of applying the photoresist 160 , the photoresist 160 is applied on the light emitting structure 110 . In detail, the photoresist 160 is coated on the second electrode pad 114 that is a P-type electrode pad and the first electrode pad 115 that is an N-type electrode pad located on the upper surface of the light emitting structure 110 . A photoresist 160 is applied on the electrodes 114 and 115 so that a phosphor, which will be described later, does not cover the electrodes 114 and 115 . The photoresist 160 is a photosensitive material.

Instead of a photoresist, an electrode column may be disposed on an electrode pad positioned on the light emitting structure 110 ( S720 ). The electrode pillar may be formed through an additional plating or bump process.

5C is a view for explaining the steps of separating the light emitting device 130 (S630, S730) according to the present invention.

In the step of separating the light emitting device 130 , the substrate 120 is diced to separate the plurality of individual light emitting devices 130 . In the step of separating the light emitting device 130 , the substrate 120 may be separated into individual light emitting devices 130 using a laser. The light emitting device 130 includes the above-described substrate 120 and the light emitting device 130 . The present invention is not limited thereto, and the substrate 120 may be diced through a dicer.

5D is a view for explaining the steps of disposing the light emitting device 130 (S640, S740) according to the present invention.

In the step of disposing the light emitting device 130 , a plurality of light emitting devices 130 are disposed at a predetermined interval. In the step of disposing the light emitting device 130 , the individual light emitting device 130 is placed on top of the stretchable film and the film is stretched so that the distance between the light emitting devices 130 becomes a predetermined value.

The stretchable film may be a blue sheet.

In the step of disposing the light emitting devices 130, the separated light emitting devices 130 may be disposed at regular intervals without using a stretchable film.

The content of the phosphor covering the light emitting devices 130 is determined based on the above-described spacing between the light emitting devices 130 .

5E is a view for explaining the sidewall 170 arrangement step (S650, S750) according to the present invention. In the step of arranging the sidewall 170 , the sidewall 170 is disposed on both sides of the light emitting device 130 .

The thickness of the sidewall 170 may be thicker than the thickness of the light emitting device 130 . This is to cover the side surface of the light emitting structure 110 with a phosphor to be described later.

The sidewall 170 is hydrophobic or hydrophilic. Since the wavelength conversion layer to be described later is hydrophilic, when the sidewall 170 is hydrophobic, the wavelength conversion layers 141 and 142 to be described later are formed in a convex shape. Since the wavelength conversion layers 141 and 142 to be described below are hydrophilic, when the sidewall 170 is hydrophilic, the wavelength conversion layers 141 and 142 to be described later are formed in a concave shape.

The sidewall may be white silicon or photoresist. The sidewall, which is white silicon, is not removed after processing. The sidewall, which is a photoresist, is removed after forming the upper surfaces of the wavelength conversion layers 141 and 142 in a curved surface and does not exist.

5F is a view for explaining a wavelength conversion layer forming step ( S660 ) according to an embodiment of the present invention. 5G is a view for explaining the wavelength conversion layer forming step (S760) according to another embodiment of the present invention.

5F is a view for explaining a step of forming a wavelength conversion layer when the sidewall 170 is hydrophobic. 5G is a view for explaining a step of forming a wavelength conversion layer when the sidewall 170 is hydrophilic.

In the wavelength conversion layer forming step, the wavelength conversion layer is formed by dispensing glass and phosphor so as to cover the light emitting device 130 positioned between the two sidewalls 170 .

In the step of forming the wavelength conversion layer, glass and a phosphor are applied to cover the light emitting device 130 through a dispensing process.

The wavelength conversion layer forming step is not limited to the dispensing process, and the wavelength conversion layer may be formed through a spin on glass (SOG) process, a screen printing process, or a spray coating process.

When the upper surface of the wavelength conversion layer is flattened, a spin on glass (SOG) process, a screen printing process, or a spray coating process may be applied.

When the upper surface of the wavelength conversion layer is curved, a dispensing process may be applied.

The surface of the wavelength conversion layer positioned on the upper surface of the light emitting device 130 is a convex curved surface or a concave curved surface. When the sidewall 170 is hydrophobic, the surface of the wavelength conversion layer becomes convex. When the sidewall 170 is hydrophilic, the surface of the wavelength conversion layer is concave.

5H to 5K are diagrams for explaining the step of removing the photoresist 160 ( S670 ) according to an embodiment of the present invention. 5I is a view for explaining the photoresist 160 removal step (S770) according to another embodiment of the present invention.

5H and 5I are diagrams for explaining a step of removing the photoresist 160 when the sidewall 170 is hydrophobic. 5J and 5K are diagrams for explaining a step of removing the photoresist 160 when the sidewall 170 is hydrophilic. 5H and J show an embodiment in which the sidewall 170 itself of the photoresist deposit is removed. 5I and 5K show an embodiment in which the sidewall 170 is cut with respect to the center of the sidewall 170 made of white silicon component.

The photoresist removal steps S670 and S770 remove the photoresist 160 applied on the light emitting device 130 . The photoresist 160 may be removed using acetone or a stripper. The photoresist 160 removal step may also remove the sidewall 170 of the photoresist component. The photoresist removal ( S670 ) may remove the sidewall 170 itself of the photoresist component.

In the photoresist removal ( S670 ), the sidewall 170 of the white silicon component may be cut in half through laser dicing or sawing. The sawing uses a diamond saw.

In the photoresist removal step, the photoresist 160 located on the upper surfaces of the pair of electrode pads 114 and 115 is removed, the sidewall 170 of the photoresist component located on the side of the individual light emitting device is removed, or the sidewall of the white silicon component is removed. The side wall 170 is cut based on the center of 170 .

5 l to o are diagrams for explaining a step of forming the metal layers 151 and 152 according to an embodiment of the present invention. 5M is a view for explaining a step of forming the metal layers 151 and 152 according to another embodiment of the present invention.

5 l and m are diagrams for explaining a step of forming the metal layers 151 and 152 when the sidewall 170 is hydrophobic. 5 n and o are views for explaining a step of forming the metal layers 151 and 152 when the photoresist pillar 170 is hydrophilic. 5 l and n show an embodiment in which sidewall 170 is not present. 5 m and o show an embodiment in which a side wall 170 is present.

In the step of forming the metal layers 151 and 152 , the metal layers 151 and 152 are formed to surround the wavelength conversion layers 141 and 142 positioned on the side surface of the light emitting device 130 .

In the step of forming the metal layers 151 and 152 , the metal layers 151 and 152 are deposited on the lower upper side of the light emitting device 130 . In the step of forming the metal layers 151 and 152, the metal layers 151 and 152 are deposited through an e-beam or sputter.

The metal layers 151 and 152 are metal. The metal layers 151 and 152 connect the upper portion of the light emitting device 130 and the lower portion of the substrate 120 so that the light emitting device 130 and the substrate 120 are electrically connected.

Although the present invention has been described as described above, those skilled in the art to which the present invention pertains will recognize that the present invention may be implemented in other forms while maintaining the technical spirit and essential features of the present invention. Therefore, the above-described embodiments are merely exemplary, and are not intended to limit the scope of the present invention to only the foregoing embodiments. In addition, the flowchart shown in the drawings is merely an exemplary order in order to obtain the most desirable result in carrying out the present invention, and it goes without saying that other steps may be further added or some steps may be deleted.

The scope of the present invention will be defined by the claims, but all changes or modifications derived from configurations directly derived from the claims, as well as configurations equivalent thereto, are also interpreted to be included in the scope of the present invention. should be

110: light emitting structure
111: first conductivity type semiconductor layer
112: active layer
113: second conductivity type semiconductor layer
114: second electrode pad
115: first electrode pad
116: second electrode
117: first electrode
120: substrate
130: light emitting element
140: wavelength conversion layer
141: wavelength conversion layer
142: wavelength conversion layer
143: wavelength conversion layer
150: metal layer
151: second metal layer
152: first metal layer
160: photoresist
170: side wall

Claims (7)

light emitting element;
a wavelength conversion layer surrounding the light emitting device; and
A metal layer disposed on the lower portion of the light emitting device and on the side and upper portions of the wavelength conversion layer,
The wavelength conversion layer includes a hole exposing a pair of electrode pads positioned on the upper surface of the light emitting device.
semiconductor device
The method of claim 1,
A sidewall spaced apart from the light emitting device by a predetermined distance and disposed between the wavelength conversion layer and the metal layer;
The upper surface of the wavelength conversion layer is a convex curved surface or a concave curved semiconductor device.
The method of claim 1,
The metal layer is
A semiconductor device in contact with the lower surface, the side surface and the upper surface of the wavelength conversion layer surrounding a part of the side surface and the upper surface of the light emitting element.

The method of claim 1,
The metal layer is
A semiconductor device in which a part is positioned under the light emitting device at a distance of 10 to 200 μm from another part
A light emitting structure forming step of forming a light emitting device on the substrate;
A photoresist coating step of applying a photoresist on the light emitting structure;
a light emitting device separation step of separating the substrate into a plurality of individual light emitting devices by dicing;
a light emitting device arrangement step of disposing a plurality of light emitting devices at regular intervals;
A sidewall arrangement step of disposing sidewalls on both sides of the light emitting device;
a wavelength conversion layer forming step of dispensing a phosphor to cover a light emitting device positioned between two sidewalls to form a wavelength conversion layer;
A photoresist removal step of removing the photoresist applied on the light emitting device;
A reflective layer forming step of forming a reflective layer to surround the wavelength conversion layer located on the side of the light emitting device; A method of manufacturing a semiconductor device comprising
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