KR101612960B1 - Solar cell, transfer film for forming pattern of solar cell and fabricating method solar cell by using the film - Google Patents

Abstract

The present invention relates to a solar cell, a transfer film for forming a pattern of a solar cell, and a method of manufacturing a solar cell using the film. A solar cell according to an embodiment of the present invention includes a substrate of a first conductivity type; An emitter section of a second conductivity type located on a light receiving surface side of the substrate; A plurality of first electrodes located on the emitter section and electrically connected to the emitter section; At least one first current collector located above the emitter and formed in a direction crossing the first electrode; And a second current collector located on a rear surface of the substrate and electrically connected to the substrate, wherein the first electrode and the first current collector are formed to have the same thickness.

Photovoltaics, fine width, uniform linewidth, photolithography, lamination, warrior

Description

TECHNICAL FIELD [0001] The present invention relates to a solar cell, a transfer film for forming a pattern of a solar cell, and a method of manufacturing a solar cell using the film.

The present invention relates to a solar cell, a transfer film for forming a pattern of a solar cell, and a method of manufacturing a solar cell using the film.

Recently, as energy resources such as petroleum and coal are expected to be depleted, interest in alternative energy to replace them is increasing, and solar cells that produce electric energy from solar energy are attracting attention.

A typical solar cell has a substrate and an emitter layer, each of which is made of a semiconductor of a different conductive type such as a p-type and an n-type. At this time, the emitter portion is located on the light receiving surface side of the substrate, and a p-n junction is formed at the interface between the substrate and the emitter portion.

A first electrode electrically connected to the emitter portion is located on the emitter portion, and a second electrode and a second collector portion electrically connected to the substrate are located on the substrate opposite to the light receiving surface, that is, on the rear surface of the substrate.

When light is incident on such a solar cell, electrons in the semiconductor become free electrons (hereinafter referred to as 'electrons') due to a photoelectric effect, and electrons and holes are attracted to n Type semiconductor and the p-type semiconductor, for example, toward the emitter portion and the substrate, respectively. And the transferred electrons and holes are collected by the respective electrodes electrically connected to the substrate and the emitter portion.

At this time, on the emitter portion and the substrate, at least one current collector for electrically connecting the emitter portion and each of the electrodes disposed on the substrate, for example, a bus bar, is formed.

Here, the current collector may include a first current collector located on the emitter and electrically connected to the first electrode and a second current collector located on the backside of the substrate, and the second current collector may be disposed on the rear surface of the substrate The second electrode may be electrically connected to the second electrode.

Conventionally, a first electrode, a first current collector, a second electrode, a second current collector, and the like are formed by a printing process when a solar cell having such a configuration is manufactured.

For example, a silver paste is printed on a rear surface of a substrate in a plurality of line shapes and then dried to form a second current collector. On the back surface of the substrate not covered with the second current collector, aluminum paste The first electrode and the first current collector were formed by printing and drying the silver paste on the light receiving surface of the substrate, and the sintering process was performed.

Thus, the conventional manufacturing method requires several times of printing and drying processes, and therefore, it takes much time to manufacture a solar cell.

In addition, due to the nature of the printing process, it is difficult to reduce the line width of the electrode and the current collecting portion to approximately 80 mu m or less. Therefore, there is a limit in increasing the area of the light receiving surface and the electrode and current collector are formed with a non- .

SUMMARY OF THE INVENTION The present invention provides a solar cell including an electrode having a fine line width and uniform line width and thickness along the length direction.

Another aspect of the present invention is to provide a transfer film for pattern formation of a solar cell.

Another aspect of the present invention is to provide a method of manufacturing a solar cell using the above-mentioned transfer film.

A solar cell according to an embodiment of the present invention includes a substrate of a first conductivity type; An emitter section of a second conductivity type located on a light receiving surface side of the substrate; A plurality of first electrodes located on the emitter section and electrically connected to the emitter section; At least one first current collector located above the emitter and formed in a direction crossing the first electrode; And a second current collector located on a rear surface of the substrate and electrically connected to the substrate, wherein the first electrode and the first current collector are formed to have the same thickness.

At least one of the first electrode and the first current collector may have a fine line width of 80 탆 or less, and the first electrode and the first current collector may each have a uniform line width and thickness.

The first electrode and the first current collector may be formed of a photosensitive conductive paste formed by mixing conductive particles containing silver (Ag) and a glass powder containing lead (Pb).

According to an embodiment of the present invention, the solar cell may further include an antireflection film disposed on the emitter of the region where the first electrode and the first current collector are not formed. The antireflection film may include a first electrode, It may be formed to have a thickness smaller than the entire thickness.

The solar cell according to an embodiment of the present invention may further include a second electrode located on a rear surface of the substrate in a region where the second current collector is not formed, and the second current collector and the second electrode may be the same And the second current collector may be formed to have a uniform line width and thickness along the longitudinal direction.

The transfer film according to an embodiment of the present invention includes a first base film and a first transfer pattern located on one side of the film, wherein the first transfer pattern is formed on the light receiving surface of the solar cell, A first transfer film including a first electrode pattern and a first current collector pattern for forming all of the first electrode pattern and the first current collector pattern; And a second transfer pattern disposed on one side of the second base film, wherein the second transfer pattern includes a second electrode pattern for forming a second electrode and a second current collector on a rear surface of the solar cell, And a second transfer film including a second current collector pattern.

The first electrode pattern and the first current collector pattern are formed to have the same thickness, and at least one of the first electrode pattern and the first current collector pattern has a fine line width of 80 mu m or less.

The first electrode pattern and the first current collector pattern are formed of a photosensitive conductive paste formed by mixing conductive particles containing silver (Ag) and glass powder containing lead (Pb), and the first electrode pattern and the first electrode pattern The collector pattern is formed with uniform line width and thickness, respectively.

The second current collector pattern and the second electrode pattern are formed to have the same thickness.

The solar cell of the above-described configuration includes the steps of: fabricating a substrate of the first conductivity type, in which the emitter portion of the second conductivity type is located on one side; Fabricating a first transfer film in which a first transfer pattern including a first electrode pattern and a first current collector pattern is located on one side; Fabricating a second transfer film in which a second transfer pattern including a second electrode pattern and a second current collector pattern is located on one side; Transferring the first transfer pattern onto the emitter portion and transferring the second transfer pattern onto the back surface of the substrate; And firing the first transfer pattern and the second transfer pattern.

The step of preparing the first transfer film includes the steps of: printing a photosensitive conductive paste on one side of the first base film; Forming a plurality of first transfer patterns by patterning the photosensitive conductive paste by a photoresist process; And drying the plurality of first transfer patterns. At this time, the first electrode pattern and the first current collector pattern of the first transfer pattern may be formed to have the same thickness, and at least one of the first electrode pattern and the first current collector pattern may be formed to have a fine line width of 80 mu m or less .

 The photosensitive conductive paste can be formed by mixing glass powder containing lead (Pb) and conductive particles containing silver (Ag).

The step of fabricating the substrate of the first conductivity type may further include the step of depositing an antireflection film on the entire surface of the emitter portion and the step of forming the first electrode pattern and the first collector portion pattern during firing the first transfer pattern And can be electrically connected to the emitter portion.

The step of forming the second transfer film may include a step of forming a second electrode pattern and a step of forming a second current collector pattern on the one surface of the region where the second electrode pattern is not formed, The collector pattern and the second electrode pattern can be formed to have the same thickness. Here, it is also possible to form the second electrode pattern after forming the second current collector pattern.

According to this aspect, since the transfer pattern of the transfer film, for example, the first transfer pattern is formed by the photoresist process, the first transfer pattern can be formed with a fine line width, and the line width and thickness of the first transfer pattern can be uniform . Accordingly, the light receiving area of the solar cell can be increased due to the reduction of the line width of the transfer pattern.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention in the drawings, portions not related to the description are omitted, and like reference numerals are given to similar portions throughout the specification.

In the drawings, the thickness is enlarged to clearly represent the layers and regions. When a layer, film, region, plate, or the like is referred to as being "on" another portion, it includes not only the case directly above another portion but also the case where there is another portion in between. Conversely, when a part is "directly over" another part, it means that there is no other part in the middle.

Embodiments of the present invention will now be described with reference to the accompanying drawings.

1 is an exploded perspective view of a solar cell module having a solar cell according to an embodiment of the present invention. 1, the solar cell module includes a plurality of solar cells 10, an interconnector 20 for electrically connecting adjacent solar cells 10, an upper shield layer (EVA) for protecting the solar cells 10, A transparent member 40 disposed on the upper protective film 30a toward the light receiving surface of the solar cell 10 and a lower protective film 30b disposed on the opposite side of the light receiving surface 30a and the lower protective film 30b, And a frame (not shown) for housing the components integrated by the lamination process.

Here, the back sheet 50 protects the solar cells 10 from the external environment by preventing moisture from penetrating the rear surface of the solar cell module. Such a backsheet 50 may have a multi-layer structure such as a layer preventing moisture and oxygen penetration, a layer preventing chemical corrosion, and a layer having insulating properties.

The upper protective film 30a and the lower protective film 30b are integrated with the solar cells 10 by the lamination process in a state where they are respectively disposed on the upper and lower portions of the solar cells 10 to prevent corrosion due to moisture penetration Thereby protecting the solar cell 10 from impact. The upper and lower protective films 30a and 30b may be made of a material such as ethylene vinyl acetate (EVA).

The transparent member 40 located on the upper protective film 30a is made of tempered glass or the like having a high transmittance and excellent breakage prevention function. At this time, the tempered glass may be a low iron tempered glass having a low iron content. The transparent member 40 may be embossed on the inner side to enhance the light scattering effect.

2 is a partial perspective view of the solar cell shown in Fig. Referring to the drawings, a solar cell 10 includes a substrate 11, an emitter 12 positioned on a light receiving surface of the substrate 11, that is, a surface on which light is incident, At least one first current collector 14, a first electrode 13, and a first current collector (not shown) located on the emitter 12 in the direction intersecting the first electrode 13, the first electrode 13, The antireflection film 15 located on the emitter section 12 where the first current collector 16 and the second current collector 16 are not located, the second current collector 16 and the second current collector 16 located on the opposite side of the light receiving surface, And a second electrode 17 located on the rear surface of the substrate excluding the region where the first electrode 17 is formed.

The substrate 11 is a semiconductor substrate of a first conductivity type, for example, silicon of p-type conductivity type. The silicon may be monocrystalline silicon, polycrystalline silicon or amorphous silicon. When the substrate 11 has a p-type conductivity type, it contains an impurity of a trivalent element such as boron (B), gallium (Ga), indium (In) or the like.

The substrate 11 may be textured to form a texturing surface, which is an uneven surface, of the substrate 11.

If the surface of the substrate 11 is formed as a textured surface, the light reflection on the light receiving surface of the substrate 11 is reduced, and the incidence and reflection operations are performed on the textured surface, so that the light is trapped inside the solar cell, do.

Thus, the efficiency of the solar cell is improved. In addition, since the reflection loss of light incident on the substrate 11 is reduced, the amount of light incident on the substrate 11 is further increased.

The emitter section 12 is a region doped with an impurity having a second conductivity type opposite to the conductivity type of the substrate 11, for example, an n-type conductivity type. The emitter section 12 includes a semiconductor substrate 11, pn junction.

When the emitter section 12 has the n-type conductivity type, the emitter section 12 dopes the impurity of the pentavalent element such as phosphorus (P), arsenic (As), antimony (Sb) .

Accordingly, when electrons in the semiconductor are energized by the light incident on the substrate 11, the electrons move toward the n-type semiconductor and the holes move toward the p-type semiconductor. Therefore, when the substrate 11 is p-type and the emitter 12 is n-type, the separated holes move toward the substrate 11, and the separated electrons move toward the emitter 12.

Conversely, the substrate 11 may be of the n-type conductivity type and may be made of a semiconductor material other than silicon. When the substrate 11 has an n-type conductivity type, the substrate 11 may contain impurities of pentavalent elements such as phosphorus (P), arsenic (As), antimony (Sb)

Since the emitter 12 forms a p-n junction with the substrate 11, when the substrate 11 has an n-type conductivity type, the emitter 12 has a p-type conductivity type. In this case, the separated electrons move toward the substrate 11, and the separated holes migrate toward the emitter 12.

When the emitter section 12 has a p-type conductivity type, the emitter section 12 is formed by doping an impurity of a trivalent element such as boron (B), gallium (Ga), indium (In) .

An antireflection film 15 made of a silicon nitride film (SiNx) or a silicon oxide film (SiO ₂ ) is deposited on the emitter portion 12 of the substrate 11. The antireflection film 15 reduces the reflectivity of light incident on the solar cell 10 and increases the selectivity of a specific wavelength region to increase the efficiency of the solar cell 10. The antireflection film 15 may have a thickness of about 70 nm to 80 nm, and may be omitted if necessary.

The plurality of first electrodes 13 are formed on the emitter layer 12 and are electrically connected to the emitter layer 12 and are formed in a direction away from the adjacent first electrodes 13. Each first electrode 13 collects electrons, for example, electrons, which have migrated toward the emitter section 12, and transfers the collected electrons to the first current collector 14.

The plurality of first electrodes 13 may be formed of at least one conductive material such as Ni, Cu, Ag, Al, Sn, Zn ), Indium (In), titanium (Ti), gold (Au), and combinations thereof, but may be made of other conductive metal materials.

In the embodiment of the present invention, the plurality of first electrodes 13 are formed of a photosensitive conductive paste formed by mixing glass powder containing lead (Pb) and conductive particles containing silver (Ag).

At least one first current collector (14) is located on the emitter (12). A first current collector 14, also referred to as a bus bar, is formed in a direction crossing the first electrode 13. Therefore, the first electrode 13 and the first current collector 14 are arranged to cross over the emitter 12.

The first current collector 14 is also made of at least one conductive material and is electrically connected to the emitter 12 and the first electrode 13. Accordingly, the first current collector 14 outputs the charge, for example, electrons, transmitted from the first electrode 13 to an external device.

The conductive metal material constituting the first current collector 14 may be at least one selected from the group consisting of Ni, Cu, Ag, Al, Sn, Zn, (Ti), gold (Au), and combinations thereof, but may be made of other conductive metal materials.

In this embodiment, the plurality of first current collectors 14 are made of the photosensitive conductive paste having the same composition as that of the first electrode 13.

When the first electrode 13 and the first current collector 14 are formed of the photosensitive conductive paste described above, the first electrode 13 and the first current collector 14 are formed on the substrate 11 at a temperature And may be electrically connected to the emitter part 12 in a process of firing in the emitter part 12.

At this time, the above-described electrical connection is made as the lead component contained in the photosensitive conductive paste in the firing process etches the antireflection film 15 and silver (Ag) particles come into contact with the emitter section 12.

Here, the first electrode 13 and the first current collector 14 have the same thickness T1. At least one of the first electrode 13 and the first current collector 14 is formed of a fine line width W1 of 80 mu m or less and has a uniform line width W1 and a uniform thickness T1 along the length direction. .

The reason why the first electrode 13 and the first current collector 14 are formed as described above is that the first electrode 13 and the first current collector 14 are formed by a transfer process using a transfer film . This will be described later in detail.

On the rear surface of the substrate 11, a plurality of second current collectors 16 are located. The second current collector 16 is formed in a direction intersecting the first electrode 13, that is, in a direction parallel to the first current collector 14.

The second current collector 16 is made of at least one conductive material. Accordingly, the second current collector 16 outputs the charge, for example, holes, transmitted from the substrate 11 to an external device.

The conductive metal material constituting the second current collector 16 may be at least one selected from the group consisting of Ni, Cu, Ag, Al, Sn, Zn, (Ti), gold (Au), and combinations thereof, but may be made of other conductive metal materials.

For example, the second current collector 16 may be formed of a photosensitive conductive paste having the same composition as that of the first electrode 13 and the first current collector 14.

The second electrode 17 is located on the rear surface of the substrate 11 in the remaining region except for the region where the second current collector 16 is formed. The second electrode 17 is made of aluminum and forms a back surface field (BSF) at the interface with the substrate 11 in the firing step. Since the rear surface electric field acts as a potential barrier of the substrate 11, the recombination of electrons and holes at the rear side of the substrate 11 is reduced and the efficiency of the solar cell is improved.

Here, the second current collector 16 is formed to have the same thickness (T2) as the second electrode 17. The reason why the thickness T2 of the second current collector 16 and the second electrode 17 are the same is because the second current collector 16 and the second electrode 17 are formed by a transfer process using a transfer film to be.

Hereinafter, a method for manufacturing a solar cell according to an embodiment of the present invention will be described with reference to FIGS. 3 to 10. FIG.

FIG. 3 is a block diagram showing a method of manufacturing a solar cell according to an embodiment of the present invention, and FIG. 4 is a process perspective view showing a transfer step of FIG.

And Fig. 5 is a block diagram showing a method of manufacturing a first transfer film, and Figs. 6 and 7 are a plan view and a cross-sectional view of the first transfer film.

8 is a block diagram showing a method of manufacturing a second transfer film, and Figs. 9 and 10 are a plan view and a cross-sectional view of the second transfer film taken along the line X-X.

3 and 4, a method of manufacturing a solar cell according to an embodiment of the present invention includes steps of producing a first conductive type substrate (S10), fabricating a first transfer film 110 (S20 (S30), a transfer step (S40), and a firing step (S50).

Step S10 of fabricating the substrate of the first conductivity type includes forming the emitter section 12 on the light receiving surface of the substrate 11 and forming the antireflection film 15 on the emitter section 12.

Here, the emitter section 12 is of a second conductivity type opposite to the first conductivity type. For example, when the semiconductor substrate 11 is of a p-type conductivity type, the emitter portion 12 is of an n-type conductivity type.

The antireflection film 15 may be formed by sequentially depositing a silicon nitride film (SiNx) or a silicon oxide film (SiO ₂ ) on the emitter layer 12. 4 shows the substrate 11 on which the emitter section 12 and the antireflection film 15 are formed. However, the antireflection film 15 can be omitted if necessary.

Next, a step S20 of manufacturing the first transfer film 110 with reference to FIGS. 5 to 7 will be described. In this step S20, a photosensitive conductive paste is applied to one surface of the first base film 112 Printing (S21), patterning the photosensitive conductive paste by a photoresist process to form a plurality of first transfer patterns 114 (S22), and drying the plurality of first transfer patterns 114 . Here, the first transfer pattern 114 includes a first electrode pattern 114a and a first current collector pattern 114b.

The first base film 112 may be a release film, for example, a PET film, which is surface-treated with a silicone material. Here, the reason for treating the surface of the first base film 112 is to effectively strip the first transfer pattern 114 from the first base film 112 in the transfer step S40. Of course, it is also possible to form a separate release layer instead of the above-mentioned surface treatment.

The photosensitive conductive paste can be formed by mixing glass powder containing lead (Pb) and conductive particles containing silver (Ag). The first transfer pattern 114 made of the photosensitive conductive paste having such a configuration is electrically connected to the emitter section 12 during the firing in the firing step S40.

The first electrode pattern 114a and the first current collector pattern 114b constituting the first transfer pattern 114 are formed by applying the photosensitive conductive paste to one entire surface of the first base film 112 And then patterning is performed using a photoresist process.

The first electrode pattern 114a and the first current collector pattern 114b are formed to have the same thickness T1 and the line width W1 and the thickness T1 uniformly formed in the longitudinal direction.

The pattern of at least one of the first electrode pattern 114a and the first current collector pattern 114b, for example, the first electrode pattern 114a is 80 占 퐉 or less, preferably 60 占 퐉 or less, more preferably 40 占And a fine line width W1 of not more than 10 mu m. The reason why the first electrode pattern 114a can be formed with the fine line width W1 is that the photoresist process is superior in resolution to the conventional screen printing process.

A plurality of first transfer patterns 114 are formed on the first transfer film 112 and an interval D between the first transfer patterns 114 is appropriately set so that the transfer process can be efficiently performed. The range can be adjusted. 6 and 7 illustrate that three first transfer patterns 114 are formed on the first base film 112, the number of the first transfer patterns 114 is not limited.

Next, a second transfer film manufacturing step will be described with reference to FIGS. 8 to 10. In this step S30, a second electrode pattern 124a is formed on one side of the second base film 122 (S31) And forming a second current collector pattern 124b on the one surface of the region where the second electrode pattern 124a is not formed. Here, the second electrode pattern 124a and the second current collector pattern 124b constitute the second transfer pattern 124.

The second base film 122 may be formed of a PET film that is surface-treated with a silicon-based material as in the first base film 112.

The second electrode pattern 124a can be formed by applying aluminum to one surface of the second base film 122 and removing aluminum in a part of the area using a photoresist process. Here, the partial area is a region where the second current collector pattern 124b is to be formed.

Alternatively, the second electrode pattern 124a may be formed by printing aluminum using a printing mask having an opening in an area other than the area in which the second current collector pattern 124b is to be formed.

The step S32 of forming the second current collector pattern 124a may be performed on the second transfer film 122 in the region where the second electrode pattern 124a is not formed, T2 by printing a conductive material. The reason why the second electrode pattern 124a and the second current collector pattern 124b are formed to have the same thickness T2 is that in the transfer step S40 the second electrode pattern 124a and the second current collector pattern (124b) can be favorably transferred to the rear surface of the substrate (11).

A plurality of second transfer patterns 124 are formed on the second transfer film 122 so that the interval D between the respective second transfer patterns 124 can be reduced, Is formed to be equal to the interval D between the first transfer patterns 112.

4, the first transfer film 110 and the second transfer film 120 having the above-described structure are attached to the first roller 130a and the second roller 130b spaced apart from each other by a predetermined distance And the substrate 11 on which the emitter 12 and the antireflection film 15 are formed is supplied along the direction of the arrow as a space formed by the gap between the first roller 130a and the second roller 130b .

At this time, the first transfer film 110 and the second transfer film 120 can transfer the first transfer pattern 114 and the second transfer pattern 124 to the correct positions on the light receiving surface and the rear surface of the substrate 11 As shown in FIG.

The first roller 130a and the second roller 130b are maintained at a constant temperature, for example, at a temperature of 100 ° C or lower, to allow the first transfer pattern 114 and the second transfer pattern 124 to be transferred satisfactorily. Lt; / RTI >

Then, the substrate 11 is continuously supplied at a constant time interval, thereby efficiently performing the transfer process.

When the transferring step S40 is completed, the firing step S50 is performed, and the first transferring pattern 114 and the second transferring pattern 124 are fired. The firing is carried out at a temperature of about 900 DEG C or lower, and it is also possible to carry out the drying step before the firing step. The drying step may be carried out at a temperature of about 200 ° C or less.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, It belongs to the scope of right.

1 is an exploded perspective view of a solar cell module according to an embodiment of the present invention.

2 is a partial perspective view of the solar cell shown in Fig.

3 is a block diagram illustrating a method of manufacturing a solar cell according to an embodiment of the present invention.

4 is a process perspective view showing the transferring step of FIG.

5 is a block diagram showing a method of manufacturing a first transfer film.

Figs. 6 and 7 are a plan view of the first transfer film and a cross-sectional view of "VII-VII ".

8 is a block diagram showing a method of manufacturing a second transfer film.

Figs. 9 and 10 are a plan view and a cross-sectional view of the second transfer film taken along the line X-X.

BRIEF DESCRIPTION OF THE DRAWINGS

10: solar cell 11: substrate

12: emitter part 13: first electrode

14: first current collecting part 15: antireflection film

16: second collecting part 17: second electrode

20: Interconnector 30a, 30b: Protective film

40: transparent member 50: rear sheet

110: first transfer film 112: first base film

114: first transfer pattern 120: second transfer film

122: second base film 124: second transfer pattern

Claims (24)

A substrate of a first conductivity type; An emitter section of a second conductivity type located on a light receiving surface side of the substrate; A plurality of first electrodes located on the emitter section and electrically connected to the emitter section; At least one first current collector located above the emitter and formed in a direction crossing the first electrode; And A second current collecting part located on the rear surface of the substrate and electrically connected to the substrate, / RTI > Wherein the first electrode and the first current collector are formed of a photosensitive conductive paste formed by mixing conductive particles containing silver (Ag) and a glass powder containing lead (Pb) and formed to have the same thickness. The method of claim 1, Wherein at least one of the first electrode and the first current collector is formed with a fine line width of 80 mu m or less. delete The method of claim 1, Wherein the first electrode and the first current collector are formed with a uniform line width and a uniform thickness, respectively. The method of claim 1, And an antireflection film formed on the emitter of the region where the first electrode and the first current collector are not formed. The method of claim 5, Wherein the antireflection film is formed to be thinner than the first electrode and the first current collector. The method of claim 1, Wherein the second current collectors are formed of a photosensitive conductive paste having the same composition as that of the first electrode and the first current collector. The method of claim 1, And a second electrode located on the rear surface of the substrate in a region other than the region where the second current collector is formed and made of a photosensitive conductive paste having a composition different from that of the first electrode and the first current collector. 9. The method of claim 8, Wherein the second current collector and the second electrode are formed to have the same thickness. A first base film including a release film surface-treated with a silicon-based material, and a plurality of first transfer patterns disposed on one side of the film, wherein the first transfer pattern is formed on the light- A first transfer film including a first electrode pattern and a first current collector pattern for forming an electrode and a first current collector; And A second base film including a release film surface-treated with a silicon-based material, and a plurality of second transfer patterns disposed on one side of the film, wherein the second transfer pattern is formed on the rear surface of the solar cell, A second transfer film including a second electrode pattern for forming an electrode and a second current collector and a second current collector pattern, / RTI > Wherein the first electrode pattern and the first current collector pattern are formed on one surface of the first base film at an angle, Wherein the second electrode pattern and the second current collector pattern are formed on one surface of the second base film at an angle, Wherein the first electrode pattern, the first current collector pattern, and the second current collector pattern are each formed of a photosensitive conductive paste formed by mixing glass powder containing lead (Pb) and conductive particles containing silver (Ag) Transfer film for pattern formation of solar cell. 11. The method of claim 10, Wherein the first electrode pattern and the first current collector pattern are formed to have the same thickness. 11. The method of claim 10, Wherein at least one of the first electrode pattern and the first current collector pattern has a fine line width of 80 mu m or less. 11. The method of claim 10, Wherein the second current collector pattern comprises a photosensitive conductive paste having the same composition as the first electrode pattern and the first current collector pattern. 11. The method of claim 10, Wherein the first electrode pattern and the first current collector pattern are formed to have uniform line widths and thicknesses, respectively. 11. The method of claim 10, Wherein the second electrode pattern is formed of a photosensitive conductive paste having a composition different from that of the first electrode pattern, the first current collector pattern, and the second current collector pattern, and the second current collector pattern and the second electrode pattern A transfer film for pattern formation of a solar cell formed to have the same thickness as each other. Fabricating a substrate of a first conductivity type in which the emitter portion of the second conductivity type is located on one side; Fabricating a first transfer film in which a first transfer pattern including a first electrode pattern and a first current collector pattern is located on one side; Preparing a second transfer film in which a second transfer pattern including a second collector pattern is located on one side; Placing the first transfer film on an upper portion of the solar cell substrate and positioning the second transfer film below the solar cell substrate; Transferring the first transfer pattern and the second transfer pattern onto a front surface and a rear surface of the substrate, respectively; And Firing the first transfer pattern and the second transfer pattern / RTI > Wherein the step of preparing the first transfer film comprises: Printing a photosensitive conductive paste formed by mixing conductive particles containing silver (Ag) and a glass powder containing lead (Pb) on one surface of a first base film; Patterning the photosensitive conductive paste by a photoresist process to form the first transfer pattern at an angle; And Drying the first transfer pattern Wherein the method comprises the steps of: delete 17. The method of claim 16, Wherein the first electrode pattern and the first current collector pattern are formed to have the same thickness. 17. The method of claim 16, Wherein at least one of the first electrode pattern and the first current collector pattern is formed with a fine line width of 80 mu m or less. delete 17. The method of claim 16, Wherein the step of fabricating the substrate of the first conductivity type further comprises depositing an antireflection film on the entire surface of the emitter. 22. The method of claim 21, Wherein the first electrode pattern and the first current collector pattern of the first transfer pattern are electrically connected to the emitter section while the first transfer pattern is baked. 17. The method of claim 16, Wherein the step of preparing the second transfer film comprises: A photosensitive conductive paste having a composition different from that of the first electrode pattern and the first current collector pattern is printed on one side of the second base film and then the photosensitive conductive paste is patterned by a photoresist process to form a second electrode pattern Embossing; And  Forming a photosensitive conductive paste having the same composition as the first electrode pattern and the first current collector pattern on the one surface of the region where the second electrode pattern is not formed by embossing a second current collector pattern; And Drying the second electrode pattern and the second current collector pattern Wherein the method comprises the steps of: 24. The method of claim 23, Wherein the second current collector pattern and the second electrode pattern are formed to have the same thickness.

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