KR101351212B1 - 경화성 조성물 및 함불소 경화물 - Google Patents
경화성 조성물 및 함불소 경화물 Download PDFInfo
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- KR101351212B1 KR101351212B1 KR1020087030172A KR20087030172A KR101351212B1 KR 101351212 B1 KR101351212 B1 KR 101351212B1 KR 1020087030172 A KR1020087030172 A KR 1020087030172A KR 20087030172 A KR20087030172 A KR 20087030172A KR 101351212 B1 KR101351212 B1 KR 101351212B1
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- Prior art keywords
- carbon
- double bond
- aliphatic ring
- ring structure
- perfluoro
- Prior art date
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- XWIGYEOZHFHUEH-UHFFFAOYSA-N (1,2,2,3,3,4,4,5,5,6,6-undecafluorocyclohexanecarbonyl) 1,2,2,3,3,4,4,5,5,6,6-undecafluorocyclohexane-1-carboperoxoate Chemical compound FC1(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C1(F)C(=O)OOC(=O)C1(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C1(F)F XWIGYEOZHFHUEH-UHFFFAOYSA-N 0.000 description 1
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- KHXKESCWFMPTFT-UHFFFAOYSA-N 1,1,1,2,2,3,3-heptafluoro-3-(1,2,2-trifluoroethenoxy)propane Chemical compound FC(F)=C(F)OC(F)(F)C(F)(F)C(F)(F)F KHXKESCWFMPTFT-UHFFFAOYSA-N 0.000 description 1
- WZLFPVPRZGTCKP-UHFFFAOYSA-N 1,1,1,3,3-pentafluorobutane Chemical compound CC(F)(F)CC(F)(F)F WZLFPVPRZGTCKP-UHFFFAOYSA-N 0.000 description 1
- XLKWQAQYRNTVKF-UHFFFAOYSA-N 1,1,2,3,3,4,5-heptafluoro-5-(1,2,3,3,4,5,5-heptafluoropenta-1,4-dienoxy)penta-1,4-diene Chemical compound FC(F)=C(F)C(F)(F)C(F)=C(F)OC(F)=C(F)C(F)(F)C(F)=C(F)F XLKWQAQYRNTVKF-UHFFFAOYSA-N 0.000 description 1
- JWKJOADJHWZCLL-UHFFFAOYSA-N 1,2,3,4,5,5,6,6,6-nonafluoro-1-(1,2,3,4,5,5,6,6,6-nonafluorohexa-1,3-dienoxy)hexa-1,3-diene Chemical compound FC(OC(F)=C(F)C(F)=C(F)C(F)(F)C(F)(F)F)=C(F)C(F)=C(F)C(F)(F)C(F)(F)F JWKJOADJHWZCLL-UHFFFAOYSA-N 0.000 description 1
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- HFNSTEOEZJBXIF-UHFFFAOYSA-N 2,2,4,5-tetrafluoro-1,3-dioxole Chemical class FC1=C(F)OC(F)(F)O1 HFNSTEOEZJBXIF-UHFFFAOYSA-N 0.000 description 1
- RFJVDJWCXSPUBY-UHFFFAOYSA-N 2-(difluoromethylidene)-4,4,5-trifluoro-5-(trifluoromethyl)-1,3-dioxolane Chemical compound FC(F)=C1OC(F)(F)C(F)(C(F)(F)F)O1 RFJVDJWCXSPUBY-UHFFFAOYSA-N 0.000 description 1
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- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
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- QSOCFKJCICIFSB-UHFFFAOYSA-N 4,4,5,5-tetrafluoro-2,2-bis(trifluoromethyl)-1,3-dioxolane Chemical compound FC(F)(F)C1(C(F)(F)F)OC(F)(F)C(F)(F)O1 QSOCFKJCICIFSB-UHFFFAOYSA-N 0.000 description 1
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- QTECILHCKMCIFT-UHFFFAOYSA-N ethyl-(2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,9-heptadecafluorononoxy)-dimethoxysilane Chemical compound CC[Si](OC)(OC)OCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F QTECILHCKMCIFT-UHFFFAOYSA-N 0.000 description 1
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- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F14/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
- C08F14/18—Monomers containing fluorine
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F259/00—Macromolecular compounds obtained by polymerising monomers on to polymers of halogen containing monomers as defined in group C08F14/00
- C08F259/08—Macromolecular compounds obtained by polymerising monomers on to polymers of halogen containing monomers as defined in group C08F14/00 on to polymers containing fluorine
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/44—Polymerisation in the presence of compounding ingredients, e.g. plasticisers, dyestuffs, fillers
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
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- C08F214/18—Monomers containing fluorine
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F279/00—Macromolecular compounds obtained by polymerising monomers on to polymers of monomers having two or more carbon-to-carbon double bonds as defined in group C08F36/00
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/02—Halogenated hydrocarbons
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
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- C08L27/02—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
- C08L27/12—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
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- C08L51/003—Compositions of graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers grafted on to macromolecular compounds obtained by reactions only involving unsaturated carbon-to-carbon bonds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F230/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal
- C08F230/04—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal
- C08F230/08—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon
- C08F230/085—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon the monomer being a polymerisable silane, e.g. (meth)acryloyloxy trialkoxy silanes or vinyl trialkoxysilanes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/3154—Of fluorinated addition polymer from unsaturated monomers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/3154—Of fluorinated addition polymer from unsaturated monomers
- Y10T428/31544—Addition polymer is perhalogenated
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Abstract
Description
Claims (11)
- 2 개의 중합성의 탄소-탄소 이중 결합을 갖는 퍼플루오로디엔에 기초하는 단위로서, 1 개의 탄소-탄소 이중 결합의 2 개의 탄소 원자가 주사슬을 형성하고 1 개의 탄소-탄소 이중 결합이 측사슬로서 존재하는 단위를 포함하는 퍼플루오로 폴리머 (a) ;산소 원자를 함유해도 되는 탄소 원자로 이루어지는 지방족 고리 구조와, 1 개의 중합성의 탄소-탄소 이중 결합을 가지고, 그 탄소-탄소 이중 결합을 구성하는 2 개의 탄소 원자의 적어도 1 개는 그 지방족 고리 구조를 구성하는 탄소 원자인, 탄소수 8 이상의 퍼플루오로 고리형 모노엔 (b) ;산소 원자를 함유해도 되는 탄소 원자로 이루어지는 지방족 고리 구조와, 2 개 이상의 중합성의 탄소-탄소 이중 결합을 가지고, 적어도 1 개의 탄소-탄소 이중 결합을 구성하는 2 개의 탄소 원자의 적어도 1 개는 그 지방족 고리 구조를 구성하는 탄소 원자인 퍼플루오로 고리형 폴리엔 (c) ;및 중합 개시제 (i) ; 를 함유하고,퍼플루오로 폴리머 (a) 와 퍼플루오로 고리형 모노엔 (b) 과 퍼플루오로 고리형 폴리엔 (c) 의 비율 (합계 100 질량부) 은 질량비로 (a)/(b)/(c)=(5 ∼ 95)/(2 ∼ 80)/(2 ∼ 50) 인 것을 특징으로 하는 경화성 조성물.
- 제 1 항에 있어서,퍼플루오로 폴리머 (a) 가 분자 내에 지방족 고리 구조를 갖지 않는 경화성 조성물.
- 제 1 항에 있어서,퍼플루오로 폴리머 (a) 는 이중 결합 함유량이 0.1 ∼ 2mmol/g 인 경화성 조성물.
- 제 2 항에 있어서,퍼플루오로 폴리머 (a) 는 이중 결합 함유량이 0.1 ∼ 2mmol/g 인 경화성 조성물.
- 제 1 항 내지 제 4 항 중 어느 한 항에 있어서,퍼플루오로 폴리머 (a) 는 질량 평균 분자량이 1,000 ∼ 10,000 인 경화성 조성물.
- 제 1 항 내지 제 4 항 중 어느 한 항에 있어서,퍼플루오로 폴리머 (a) 는 테트라플루오로에틸렌에 기초하는 단위를 추가로 포함하는 폴리머인 경화성 조성물.
- 제 1 항 내지 제 4 항 중 어느 한 항에 있어서,퍼플루오로 고리형 모노엔 (b) 은 1 또는 2 개의 산소 원자를 함유하는 5 원자 고리 또는 6 원자 고리로 이루어지는 지방족 고리 구조를 가지고, 그 지방족 고리 구조를 구성하는 인접하는 2 개의 탄소 원자 사이에 탄소-탄소 2 중 결합이 존재하거나 또는 그 지방족 고리 구조를 구성하는 1 개의 탄소 원자와 그 지방족 고리 구조 이외의 탄소 원자와의 사이에 탄소-탄소 이중 결합이 존재하는 경화성 조성물.
- 제 1 항 내지 제 4 항 중 어느 한 항에 있어서,퍼플루오로 고리형 폴리엔 (c) 은 1 또는 2 개의 산소 원자를 함유하는 5 원자 고리 또는 6 원자 고리로 이루어지는 지방족 고리 구조를 가지고, 그 지방족 고리 구조를 구성하는 인접하는 2 개의 탄소 원자 사이에 탄소-탄소 이중 결합이 존재하거나 또는 그 지방족 고리 구조를 구성하는 1 개의 탄소 원자와 그 지방족 고리 구조 이외의 탄소 원자와의 사이에 탄소-탄소 이중 결합이 존재하고, 또한 상기 탄소-탄소 이중 결합이 존재하는 지방족 고리 구조를 2 개 갖는 경화성 조성물.
- 제 1 항 내지 제 4 항 중 어느 한 항에 기재된 경화성 조성물을 경화시켜 얻어지는 함불소 경화물.
- 제 9 항에 기재된 함불소 경화물로 이루어지는 광학 재료.
- 제 9 항에 기재된 함불소 경화물로 투광 밀봉된 발광 소자.
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JP2006162172 | 2006-06-12 | ||
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PCT/JP2007/061758 WO2007145181A1 (ja) | 2006-06-12 | 2007-06-11 | 硬化性組成物および含フッ素硬化物 |
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US (1) | US7847028B2 (ko) |
EP (1) | EP2028200B1 (ko) |
JP (1) | JP5157902B2 (ko) |
KR (1) | KR101351212B1 (ko) |
CN (1) | CN101466744B (ko) |
AT (1) | ATE523529T1 (ko) |
CA (1) | CA2655180A1 (ko) |
TW (1) | TW200808844A (ko) |
WO (1) | WO2007145181A1 (ko) |
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EP2239284A4 (en) * | 2008-01-28 | 2011-02-16 | Asahi Glass Co Ltd | HARDENED COMPOSITION, FLUOR CONTAINING HARDENED PRODUCT, OPTICAL MATERIAL USING THIS HARDENED PRODUCT, AND LIGHT EMITTING DEVICE |
JP5482652B2 (ja) * | 2008-04-28 | 2014-05-07 | 旭硝子株式会社 | 含フッ素重合体の製造方法および含フッ素イオン交換膜 |
WO2010074038A1 (ja) * | 2008-12-24 | 2010-07-01 | 旭硝子株式会社 | 発光素子モジュールおよびその製造方法 |
JP5644504B2 (ja) | 2009-01-16 | 2014-12-24 | 旭硝子株式会社 | 含フッ素弾性共重合体およびその製造方法、架橋ゴム物品 |
JP2010195937A (ja) * | 2009-02-25 | 2010-09-09 | Asahi Glass Co Ltd | 含フッ素有機過酸化物、重合開始剤および含フッ素重合体の製造方法 |
CN102741343A (zh) * | 2010-02-05 | 2012-10-17 | 旭硝子株式会社 | 含氟固化性树脂组合物 |
JPWO2014030586A1 (ja) * | 2012-08-21 | 2016-07-28 | 旭硝子株式会社 | 硬化性含フッ素重合体、その製造方法及び含フッ素重合体硬化物 |
JP6483613B2 (ja) * | 2013-09-12 | 2019-03-13 | 創光科学株式会社 | 紫外線発光装置 |
CN104671676A (zh) * | 2013-10-16 | 2015-06-03 | Ofs菲特尔有限责任公司 | 改进的用于光纤的低折射率涂层,其制造方法和包含其的制品 |
US10035915B2 (en) * | 2013-10-16 | 2018-07-31 | Ofs Fitel, Llc | Low refractive index coating for optical fibers, methods of manufacture thereof and articles comprising the same |
WO2015098773A1 (ja) | 2013-12-26 | 2015-07-02 | 旭硝子株式会社 | 含フッ素架橋体の製造方法およびその使用 |
CN106488964B (zh) * | 2014-07-15 | 2018-09-21 | Agc株式会社 | 紫外线发光装置用粘接剂和紫外线发光装置 |
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CN111655779B (zh) * | 2017-12-28 | 2022-04-29 | 3M创新有限公司 | 包含用官能氟化硅烷化合物官能化的纳米粒子的含氟聚合物组合物 |
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- 2007-06-11 CA CA002655180A patent/CA2655180A1/en not_active Abandoned
- 2007-06-11 KR KR1020087030172A patent/KR101351212B1/ko not_active Expired - Fee Related
- 2007-06-11 WO PCT/JP2007/061758 patent/WO2007145181A1/ja active Application Filing
- 2007-06-11 EP EP07745047A patent/EP2028200B1/en not_active Not-in-force
- 2007-06-11 AT AT07745047T patent/ATE523529T1/de not_active IP Right Cessation
- 2007-06-11 CN CN200780021293XA patent/CN101466744B/zh not_active Expired - Fee Related
- 2007-06-12 TW TW96121208A patent/TW200808844A/zh unknown
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US7847028B2 (en) | 2010-12-07 |
CN101466744A (zh) | 2009-06-24 |
JP5157902B2 (ja) | 2013-03-06 |
WO2007145181A1 (ja) | 2007-12-21 |
CN101466744B (zh) | 2011-01-05 |
EP2028200A4 (en) | 2009-06-24 |
EP2028200B1 (en) | 2011-09-07 |
US20090118429A1 (en) | 2009-05-07 |
EP2028200A1 (en) | 2009-02-25 |
CA2655180A1 (en) | 2007-12-21 |
JPWO2007145181A1 (ja) | 2009-10-29 |
KR20090018812A (ko) | 2009-02-23 |
TW200808844A (en) | 2008-02-16 |
ATE523529T1 (de) | 2011-09-15 |
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