KR100963201B1 - 칩 내장형 기판 및 그의 제조 방법 - Google Patents
칩 내장형 기판 및 그의 제조 방법 Download PDFInfo
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- KR100963201B1 KR100963201B1 KR1020080023454A KR20080023454A KR100963201B1 KR 100963201 B1 KR100963201 B1 KR 100963201B1 KR 1020080023454 A KR1020080023454 A KR 1020080023454A KR 20080023454 A KR20080023454 A KR 20080023454A KR 100963201 B1 KR100963201 B1 KR 100963201B1
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- 239000000758 substrate Substances 0.000 title claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 61
- 239000011889 copper foil Substances 0.000 claims abstract description 61
- 239000002184 metal Substances 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000011888 foil Substances 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 9
- 239000010409 thin film Substances 0.000 claims description 30
- 239000003795 chemical substances by application Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 24
- 238000007789 sealing Methods 0.000 claims description 24
- 239000000853 adhesive Substances 0.000 claims description 19
- 230000001070 adhesive effect Effects 0.000 claims description 19
- 230000017525 heat dissipation Effects 0.000 claims description 12
- 230000000149 penetrating effect Effects 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 6
- 239000010408 film Substances 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000003566 sealing material Substances 0.000 claims 1
- 238000005516 engineering process Methods 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
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- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/732—Location after the connecting process
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- H01L2224/82009—Pre-treatment of the connector or the bonding area
- H01L2224/8203—Reshaping, e.g. forming vias
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- H01L2224/9212—Sequential connecting processes
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- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
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Abstract
Description
Claims (12)
- 복수개의 관통홀들이 각각 형성된 금속박(箔) 패턴들과;상기 금속박 패턴들에 접착되고, 상기 복수개의 관통홀들 각각에 대응되는 위치에 형성되어 있는 입출력 단자들을 갖는 칩과;상기 칩을 감싸며, 상기 금속박 상부에 형성된 실링제와;상기 복수개의 관통홀들 각각을 통하여 상기 입출력 단자들에 연결되어 있는 패드들로 구성된 칩 내장형 기판.
- 청구항 1에 있어서,상기 패드들은,상기 칩 하부에 있는 것을 특징으로 하는 칩 내장형 기판.
- 청구항 1에 있어서,상기 실링제에는 복수개의 관통홀들이 더 형성되어 있고,상기 패드들은,상기 금속박 패턴들 각각에 형성된 복수개의 관통홀들과 상기 실링제에 형성된 복수개의 관통홀들을 통하여 상기 입출력 단자들에 연결되어 있으며, 상기 실링제 상부에 있는 것을 특징으로 하는 칩 내장형 기판.
- 청구항 1에 있어서,상기 칩에 접촉되어 있는 열 방출부가 더 구비되고,상기 실링제는 열 방출부의 적어도 일부를 감싸고 있는 것을 특징으로 하는 칩 내장형 기판.
- 청구항 1에 있어서,상기 칩과 상기 금속박 패턴들은 접착제로 접착되며,상기 접착제는,상기 칩의 열 팽창 계수와 상기 금속박의 열팽창 계수 사이의 열팽창 계수를 갖는 물질인 것을 특징으로 하는 칩 내장형 기판.
- 캐비티(Cavity)가 형성되어 있고, 상기 캐비티 하부가 관통된 제 1 관통홀들이 형성되어 있고, 상기 캐비티의 측면이 관통된 제 2 관통홀들이 형성되어 있는 틀과;상기 틀의 캐비티 내부의 바닥면에 접착되어 있는 칩과;상기 제 1과 2 관통홀들을 통하여 상기 칩의 입출력 단자들 각각에 연결되며, 상기 틀 상부에 형성된 패드들로 구성된 칩 내장형 기판.
- 복수개의 관통홀들이 형성된 동박을 준비하는 단계와;상기 동박의 복수개의 관통홀들에 칩의 입출력 단자들을 정렬시키는 단계와;상기 정렬된 동박과 상기 칩을 접착제로 접착시키는 단계와;상기 칩을 감싸는 실링제를 상기 동박 상부에 형성하는 단계와;상기 동박의 복수개의 관통홀들 각각의 내부로 상기 칩의 입출력 단자들을 노출시키는 단계와;상기 칩의 입출력 단자들과 연결된 도전성 박막을 상기 동박의 하부에 형성하는 단계와;상기 도전성 박막 및 동박을 패터닝하여, 상기 칩의 입출력 단자들에 연결된 패드들을 형성하는 단계로 구성된 칩 내장형 기판의 제조 방법.
- 제 1 관통홀들 및 상기 제 1 관통홀들의 외측에 배열된 제 2 관통홀들이 형성된 동박을 준비하는 단계와;상기 동박의 제 1 관통홀들에 칩의 입출력 단자들이 대응되도록, 상기 동박과 상기 칩을 접착제로 접착시키고, 상기 칩을 감싸는 실링제를 상기 동박 상부에 형성하는 단계와;상기 제 2 관통홀들 각각과 연통하는 비아들을 상기 실링제에 형성하고, 상기 동박의 복수개의 관통홀들 각각의 내부로 상기 칩의 입출력 단자들을 노출시키는 단계와;상기 칩의 입출력 단자들에 연결된 제 1 도전성 박막을 상기 동박의 하부에 형성하고, 상기 제 2 관통홀들 및 비아들을 통하여 상기 제 1 도전성 박막에 연결된 제 2 도전성 박막을 상기 실링제 상부에 형성하는 단계와;상기 제 1과 2 도전성 박막 및 상기 동박을 패터닝하여, 상기 칩의 입출력 단자들에 연결된 패드들을 상기 실링제 상부에 형성하는 단계로 구성된 칩 내장형 기판의 제조 방법.
- 청구항 7 또는 8에 있어서,상기 동박의 복수개의 관통홀들의 폭은,상기 칩의 입출력 단자의 폭보다 작은 것을 특징으로 하는 칩 내장형 기판의 제조 방법.
- 청구항 7 또는 8에 있어서,상기 실링제는,절연성 필름을 상기 칩을 감싸며 상기 동박에 열압착시켜 형성하거나, 또는 절연성 물질을 상기 칩을 감싸며 상기 동박에 도포하여 형성하는 것을 특징으로 하는 칩 내장형 기판의 제조 방법.
- 칩이 안착될 수 있는 캐비티(Cavity)가 형성되어 있고, 상기 캐비티 하부가 관통된 제 1 관통홀들이 형성되어 있고, 상기 캐비티의 측면이 관통된 제 2 관통홀들이 형성되어 있는 틀을 준비하는 단계와;상기 틀의 캐비티 내부의 바닥면에 접착제를 개재시키고 입출력 단자들이 구비된 칩을 접착시키는 단계와;상기 제 1 관통홀들 각각의 내부로 상기 칩의 입출력 단자들을 노출시키는 단계와;상기 제 1 관통홀들을 통하여 상기 칩의 입출력 단자들에 연결된 제 1 도전성 박막을 상기 틀 하부에 형성하고, 상기 제 2 관통홀들을 통하여 상기 제 1 도전성 박막에 연결된 제 2 도전성 박막을 상기 틀 상부에 형성하는 단계와;상기 제 1과 2 도전성 박막을 패터닝하여, 상기 칩의 입출력 단자들에 연결된 패드들을 상기 틀 상부에 형성하는 단계로 구성된 칩 내장형 기판의 제조 방법.
- 청구항 7,8과 11 중 한 항에 있어서,상기 도전성 박막은,도금 공정으로 형성하는 것을 특징으로 하는 칩 내장형 기판의 제조 방법.
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080023454A KR100963201B1 (ko) | 2008-03-13 | 2008-03-13 | 칩 내장형 기판 및 그의 제조 방법 |
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JPS59188955A (ja) | 1983-04-11 | 1984-10-26 | Sharp Corp | 半導体装置 |
JP2001217340A (ja) | 2000-02-01 | 2001-08-10 | Nec Corp | 半導体装置及びその製造方法 |
KR20090039411A (ko) * | 2007-10-18 | 2009-04-22 | 삼성전자주식회사 | 솔더 볼과 칩 패드가 접합된 구조를 갖는 반도체 패키지,모듈, 시스템 및 그 제조방법 |
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JPS59188955A (ja) | 1983-04-11 | 1984-10-26 | Sharp Corp | 半導体装置 |
JP2001217340A (ja) | 2000-02-01 | 2001-08-10 | Nec Corp | 半導体装置及びその製造方法 |
KR20090039411A (ko) * | 2007-10-18 | 2009-04-22 | 삼성전자주식회사 | 솔더 볼과 칩 패드가 접합된 구조를 갖는 반도체 패키지,모듈, 시스템 및 그 제조방법 |
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