KR100862926B1 - Fs mode liquid crystal display device and manufacturing method thereof - Google Patents

Abstract

The present invention relates to a FFS mode (Fringe Field Switching) liquid crystal display device and a method for manufacturing the same, and includes a lower substrate, an upper substrate, and a liquid crystal layer interposed between the substrates, the lower substrate is mutually In the FFS mode liquid crystal display device in which each pixel region is defined by gates and data lines formed in the crossing direction, and switching elements are disposed at the intersections of the gates and data lines, an electric field is applied to the liquid crystal layer. The transparent common electrode spaced apart from the transparent pixel electrode in a non-opening region in which the pixel region, the gate line, and the data line are formed with the transparent pixel electrode and an insulating layer interposed therebetween in order to control the amount of light transmission. And an upper portion of the transparent common electrode of the non-opening region in which the gate line and the data line are formed. Since a metal line having a predetermined thickness is electrically connected to the transparent common electrode at a lower portion thereof, it is possible to effectively reduce the Vcom load in the liquid crystal panel, and to increase the common electrode line load. It can effectively solve the problem of screen quality such as Flicker.

Description

F s mode liquid crystal display device and manufacturing method therefor {FRINGE FIELD SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device and a method of manufacturing the same, and more particularly, to an active matrix of a FFS mode in which a liquid crystal is driven by a transverse electric field method between a transparent pixel electrode and a transparent common electrode. It relates to a type liquid crystal display device and a manufacturing method thereof.

In general, the FFS mode liquid crystal display is proposed to improve the low aperture ratio and transmittance of the In-Plane Switching Mode (IPS mode) liquid crystal display.

The FFS mode liquid crystal display device forms a common electrode (relative electrode) and a pixel electrode with a transparent conductor, thereby increasing the aperture ratio and transmittance as compared with the IPS mode liquid crystal display device, and increasing the gap between the common electrode and the pixel electrode. By forming a fringe field between the common electrode and the pixel electrode by forming a gap smaller than the gap between the substrates, even the liquid crystal molecules existing on the electrodes are operated to obtain a more improved transmittance. Prior arts for FFS mode liquid crystal displays are disclosed, for example, in US Pat. Nos. 6,608,1,6226118 and the like, filed and registered by the present applicant.

In the conventional FFS mode liquid crystal display, a lower substrate on which a transparent pixel electrode and a thin film transistor (TFT) are formed, and correspondingly, color filter patterns of red (R), green (G), and blue (B) alternately. It consists of an upper substrate consisting of an array of color filters and a black matrix (BM).

Here, the lower substrate includes a thin film transistor (TFT) device, which serves as a switching, and a plurality of pixels including a transparent pixel electrode and a transparent common electrode.

In this pixel region, the thin film transistor TFT is operated by supplying a scan signal from a gate line, and an image signal is supplied to a transparent pixel electrode from a data line. The transparent pixel electrode generates an electric field between the transparent common electrodes to control the light transmittance of the liquid crystal interposed between the upper substrates.

In addition, a high aperture ratio FFS (HFFS) mode liquid crystal display device implemented to have a high permeability and high aperture ratio based on the FFS mode has been published by the present applicant, "High Performance mobile application with the High aperture ratio FFS (HFFS) Technology". (Dong hun Lim et al, IDW '06: December 6-8, 2006).

In the HFFS mode liquid crystal display, when the transparent common electrode is formed in a slit type and covers the gate line and the data line to block an electric field by the signal lines (Gate & Data), the HFFS mode liquid crystal display forms a transparent pixel electrode and a slit type. Since the light leakage does not occur outside the liquid crystal display region (transparent pixel portion) including the formed transparent common electrode, it is not necessary to form a separate black matrix BM, thereby greatly improving the aperture ratio.

However, the conventional high aperture ratio FFS (HFFS) mode liquid crystal display device having a high permeability and high aperture ratio has an increased load due to large resistance and capacitance of a common electrode formed of a transparent conductor (ITO). Image quality problems such as Greenish or Flicker occur due to distortion. In particular, as the screen display area increases, the load greatly increases, so it is difficult to apply in a medium-large size, and there is a problem that it can be applied only in a small size such as mobile.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problem, and an object of the present invention is to form a low resistance metal line on a transparent common electrode in a non-opening region through which a gate line and a data line pass, thereby electrically conducting a transparent common electrode. By reducing the resistance of the LCD panel, the common electrode line load (Vcom Load) in the liquid crystal panel can be effectively reduced, and the screen quality problems such as greenish or flicker due to the increase of the common electrode line load can be effectively solved. A high brightness FFS mode liquid crystal display device and a manufacturing method thereof are provided.

Another object of the present invention is to form the structure of the low-resistance metal line in the form of embossing to increase the transmission efficiency through internal reflection by external light without reducing the aperture ratio, and high brightness FFS mode liquid crystal display excellent outdoors An apparatus and a method of manufacturing the same are provided.

It is still another object of the present invention to provide high brightness without the problem of screen quality reduction such as aperture ratio reduction or Greenish, not only in a small size liquid crystal panel but also in a medium size such as a notebook application. The present invention provides an FFS mode liquid crystal display device and a method of manufacturing the same which can be easily applied to a liquid crystal panel having an aperture ratio FFS structure.

In order to achieve the above object, a first aspect of the present invention includes a lower substrate, an upper substrate, and a liquid crystal layer interposed between the substrates, and the gate and data lines are formed on the lower substrate so as to cross each other. In the FFS mode liquid crystal display device in which each pixel region is defined by a switching element, and a switching element is disposed at an intersection of the gate and data lines, the pixel region is applied to control an amount of light transmission by applying an electric field to the liquid crystal layer. A transparent common electrode spaced apart from the transparent pixel electrode in a non-opening region in which the pixel region, the gate line, and the data line are formed, having a transparent pixel electrode and an insulating layer interposed therebetween; A metal line having a predetermined thickness is disposed above or below the transparent common electrode of the formed non-opening region. To provide a FFS-mode liquid crystal display device characterized in that is formed so as to be connected to the electrode.

The embossed reflective pattern may be formed on the insulating layer of the non-opening region in which the gate line and the data line are formed by partial etching.

The second aspect of the present invention includes a lower substrate, an upper substrate, and a liquid crystal layer interposed between the substrates, and each pixel region is formed on the lower substrate by gates and data lines formed to cross each other. A FFS mode liquid crystal display device having a switching element disposed at an intersection of the gate and data lines, comprising: a transparent pixel electrode in the pixel region to apply an electric field to the liquid crystal layer to control light transmission amount; A transparent common electrode spaced apart from the transparent pixel electrode in the non-opening region in which the pixel region, the gate line and the data line are formed with an insulating layer interposed therebetween, and in the non-opening region in which the gate line and the data line are formed. An embossed reflective pattern is formed on the transparent common electrode, and a gold having a predetermined thickness is formed on the entire upper surface of the reflective pattern. Line is to provide a FFS-mode liquid crystal display device characterized in that is formed so as to be connected to the common electrode.

Here, the reflective pattern is preferably made of an insulating material of silicon nitride (SiNx) or resin (Resin).

Preferably, the black matrix is formed on the upper substrate only in the region corresponding to the switching small intestine.

Preferably, at least a portion of the color filter formed in the upper substrate corresponding to the non-opening region where the gate line and the data line are formed is formed to be open.

Preferably, the metal line is at least one or any one of copper (Cu), aluminum (Al), aluminum alloy (AlNd: Aluminum Neodymium), molybdenum (Mo), titanium (Ti) or molybdenum-tungsten (MoW). It consists of the low resistance metal material of the above alloy.

Preferably, the transparent pixel electrode is formed in a plate shape, and the transparent common electrode is formed in a slit shape.

Preferably, the transparent pixel electrode is disposed under the transparent common electrode.

Preferably, the transparent pixel electrode is disposed on the same layer as the data line.

The third aspect of the present invention includes a lower substrate, an upper substrate, and a liquid crystal layer interposed between the substrates, and each pixel region is formed on the lower substrate by gate lines and data lines formed in cross directions. A method of manufacturing a FFS mode liquid crystal display device, wherein the switching element is defined and has a switching element disposed at an intersection of the lines, the lower substrate comprising: forming a gate line including a gate electrode on a substrate; After sequentially depositing a gate insulating film, an a-Si film, and an n + a-Si film on the substrate to cover the gate line including the gate electrode, the a-Si film and the n + a-Si film are etched on the gate electrode to form an active layer. Forming a pattern; Forming a transparent pixel electrode on each of the pixel regions on the gate insulating layer; Forming a switching element by forming a data line including a source / drain electrode on an active pattern on the gate insulating layer and on the gate electrode; After applying an insulating layer on the resultant structure, forming a transparent common electrode to be spaced apart from the transparent pixel electrode in a non-opening region in which the pixel region, the gate line and the data line are formed; And forming a metal line having a predetermined thickness so as to be electrically connected to the transparent common electrode of the non-opening region through which the gate and the data line pass.

Here, an insulating material of a silicon nitride film (SiNx) or a resin (resin) is formed on the transparent common electrode of the non-opening region through which the gate line and the data line pass between the forming of the transparent common electrode and the forming of the metal line. The method may further include forming a reflective pattern having an emboss shape.

Preferably, after applying the insulating layer on the resulting structure of the switching element, the transparent common electrode is formed so as to be spaced apart from the transparent pixel electrode in the non-opening region where the pixel region, the gate line and the data line are formed. The method may further include partially etching the insulating layer of the non-opening region through which the gate line and the data line pass to form an embossed reflective pattern.

A fourth aspect of the present invention includes a lower substrate, an upper substrate, and a liquid crystal layer interposed between the substrates, and each pixel region is formed on the lower substrate by gate lines and data lines formed in cross directions. A method of manufacturing a FFS mode liquid crystal display device, wherein the switching element is defined and has a switching element disposed at an intersection of the lines, the lower substrate comprising: forming a gate line including a gate electrode on a substrate; After sequentially depositing a gate insulating film, an a-Si film, and an n + a-Si film on the substrate to cover the gate line including the gate electrode, the a-Si film and the n + a-Si film are etched on the gate electrode to form an active layer. Forming a pattern; Forming a transparent pixel electrode on each of the pixel regions on the gate insulating layer; Forming a switching element by forming a data line including a source / drain electrode on an active pattern on the gate insulating layer and on the gate electrode; Coating an insulating layer on the resultant structure, and then forming a metal line having a predetermined thickness on the insulating layer of the non-opening region through which the gate and the data line pass; And forming a transparent common electrode on the insulating layer including the metal line to be spaced apart from the transparent pixel electrode in a non-opening region in which the pixel region, the gate line, and the data line are formed. It is to provide a method of manufacturing a liquid crystal display device.

Here, after applying the insulating layer on the resulting structure of the switching element, before forming the metal line, the insulating layer of the non-opening region through which the gate line and the data line pass through the etching portion of the embossed reflection pattern It is preferable to further include forming a.

Preferably, the method includes forming a black matrix on the upper substrate only in a region corresponding to the switching element.

Preferably, the method may further include opening at least a portion of the color filter formed on the upper substrate corresponding to the non-opening region in which the gate line and the data line are formed.

Preferably, the metal line is any one or more of copper (Cu), aluminum (Al), aluminum alloy (AlNd: Aluminum Neodymium), molybdenum (Mo), titanium (Ti) or molybdenum-tungsten (MoW). It is formed of a low resistance metal material of the above alloy.

Preferably, the transparent pixel electrode is formed in a plate shape, and the transparent common electrode is formed in a slit shape.

According to the FFS mode liquid crystal display device and the manufacturing method thereof of the present invention as described above, a low-resistance metal line electrically above or below the transparent common electrode in the non-opening region through which the gate line and the data line pass. By forming the connection to reduce the resistance of the transparent common electrode, it is possible to effectively reduce the Vcom Load in the liquid crystal panel, the screen such as Greenish or Flicker due to the increase in the common electrode line load There is an advantage that can effectively solve the problem of grace.

In addition, according to the present invention, by forming the structure of the low-resistance metal line in the form of embossing, the transmission efficiency can be increased through internal reflection by external light without reducing the aperture ratio, and the liquid crystal display device having excellent visibility can be realized even outdoors. There is an advantage to this.

In addition, according to the present invention, not only a liquid crystal panel of a small size, but also a medium size such as a notebook application, a high brightness can be achieved without a problem of reducing the aperture ratio or screen quality such as Greenish. There is an advantage that can be easily applied to the liquid crystal panel of the aperture ratio FFS structure.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, embodiments of the present invention illustrated below may be modified in many different forms, and the scope of the present invention is not limited to the embodiments described below. The embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art.

(First embodiment)

1 is a plan view schematically illustrating an FFS mode liquid crystal display device according to a first embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line II ′ of the first example of FIG. 1, and FIG. FIG. 4 is a cross-sectional view of the II-II 'line according to the first example, FIG. 4 is a cross-sectional view of the II-II' line according to the second example of FIG. 1, and FIG. 5 is a cross-sectional view of the II-II 'line according to the second example of FIG. .

1 to 5, the FFS mode liquid crystal display according to the first exemplary embodiment of the present invention includes an upper substrate 100 and a lower substrate 200 that are largely opposed to each other, two substrates, and a spacer. It includes a liquid crystal layer 300 filled in the liquid crystal space provided by (not shown).

Here, the upper substrate 100 is commonly referred to as a color filter array substrate, and is mainly composed of an insulating substrate 110, a black matrix 120, a color filter 130, and the like.

The black matrix 120 is a light blocking part for preventing the leakage of light, and is formed at regular intervals on the upper portion of the substrate 110 and is generally a color filter of red (R), green (G), and blue (B). It distinguishes between and consists of the photosensitive organic substance with black pigment normally added.

The color filter 130 is formed by alternately arranging color filter patterns of red (R), green (G), and blue (B) between the black matrices 120 and irradiating from a backlight unit (not shown). To give color to the light passing through the liquid crystal layer 300.

The lower substrate 200 is also commonly referred to as a thin film transistor array substrate, and a thin film transistor (TFT), which is a switching element, is positioned in a matrix type on the insulating substrate 210, and a plurality of thin film transistors (TFTs) are provided. The gate line (GL) and the data line (Data Line, DL) passing through the () are formed.

Specifically, the lower substrate 200 is arranged so that the gate line GL and the data line DL made of opaque metal vertically cross each other to form a unit pixel, and the transparent common electrode 220 is formed in the unit pixel region. ) And the transparent pixel electrode 230 are disposed under the insulating layer 240, and the transparent pixel electrode 230 is disposed on the same layer as the data line DL in the form of a plate, for example, and the transparent common electrode 220. The silver is formed in a form having a plurality of combs by patterning the transparent conductive layer deposited on the insulating layer 240 and overlaps a predetermined region with the transparent pixel electrode 230.

Further, an active pattern 270 in which an a-Si film and an n + a-Si film are sequentially deposited on the gate electrode 250 among the gate lines GL under the gate insulating film 260, and the source / drain electrodes 280a and 280b. ) Is formed to form a thin film transistor (TFT). The drain electrode 280b is electrically connected to the transparent pixel electrode 230 to apply a data signal to the unit pixel.

In particular, the low resistance metal line 290 for reducing the resistance of the transparent common electrode 220 includes the transparent common electrode 220 of the non-opening region (or impermeable region) in which the gate line GL and the data line DL are formed. It is formed to a predetermined thickness on the), and is electrically connected to the transparent common electrode 220.

At this time, the thickness of the low-resistance metal line 290 is as thin as about several hundred micrometers to minimize the leakage of the transparent common electrode 220 formed on the metal line by a step or by the rubbing step. You have to. However, as the size of the liquid crystal display increases, the thickness of the transparent common electrode 220 may be formed to about 1000 kΩ or more.

4 and 5, the location of the low resistance metal line 290 may be formed under the transparent common electrode 220 as necessary.

The low resistance metal line 290 may be formed of any one of, for example, copper (Cu), aluminum (Al), aluminum alloy (AlNd: Aluminum Neodymium), molybdenum (Mo), titanium (Ti), or molybdenum-tungsten (MoW). It is preferably made of a low resistance metal material of the above or any one or more alloys.

As described above, the low resistance metal line 290 is formed to be electrically connected to the upper or lower portion of the transparent common electrode 220 in the non-opening region through which the gate line GL and the data line DL pass, thereby forming the transparent common electrode 220. By reducing the resistance of the panel, the common electrode line load (Vcom Load) in the liquid crystal panel (Panel) can be effectively reduced, and the screen such as Greenish or Flicker due to the increase of the common electrode line load (Vcom Load) It can effectively solve class problems.

In addition, not only a small size liquid crystal panel, but also a medium size size such as a notebook application, for example, a high-aperture-rate FFS structure capable of high brightness without decreasing aperture ratio or screen quality such as Greenish. It can be easily applied to a liquid crystal panel.

Next, a method of manufacturing the FFS mode liquid crystal display device according to the first embodiment of the present invention will be described in detail with reference to FIGS. 1 to 5.

1 to 5, first, manufacturing of the lower substrate 200 forms a gate line GL including the gate electrode 250 on the substrate 210. That is, the gate line GL including the gate electrode 250 is formed on the portion of the substrate 210 of the thin film transistor TFT forming unit by depositing and patterning an opaque metal film on the substrate 210.

Then, after the gate insulating film 260 is deposited over the entirety of the substrate 210 to cover the gate line GL including the gate electrode 250, the a-Si film and the n + a-Si film are sequentially deposited. The active patterns 270 are formed on the gate insulating layer 260 on the gate electrode 250 by patterning them.

Subsequently, the plate-type transparent pixel electrode 230 is formed on the gate insulating layer 260 to be disposed in each pixel region through deposition and patterning of the transparent conductive layer.

Then, the source / drain metal film is deposited, and then patterned to form a data line DL including the source / drain electrodes 280a and 280b, whereby the thin film transistor TFT is formed. Configure. In this case, the drain electrode 280b is formed to be electrically connected to the transparent pixel electrode 230.

Subsequently, after applying the insulating layer 240 made of, for example, silicon nitride film (SiNx), to the resulting structure on which the thin film transistor TFT is formed, a transparent common having a comb-tooth shape to overlap at least a portion of the transparent pixel electrode 230. The electrode 220 is formed.

Thereafter, for example, copper (Cu), aluminum (Al), and aluminum alloy (AlNd: Aluminum) may be electrically connected to the transparent common electrode 220 in the non-opening region through which the gate line GL and the data line DL pass. Neodymium, Molybdenum (Mo), Titanium (Ti), or Molybdenum-Tungsten (MoW) to form a low-resistance metal line 290 made of a low-resistance metal material of any one or more alloys.

4 and 5, before forming the transparent common electrode 220, the low resistance metal line 290 is first formed, and then the upper portion, that is, the insulation including the low resistance metal line 290 is formed. A transparent common electrode 220 having a comb-tooth shape may be formed on the layer 240 to overlap at least a portion of the transparent pixel electrode 230.

Finally, the upper substrate 100 including the black matrix 120 and the color filter 130 is disposed to be spaced apart by a predetermined interval so as to face the lower substrate 200, and then the upper substrate 100 and the lower substrate 200 Manufacturing of the FFS mode liquid crystal display device according to the first embodiment of the present invention is completed by interposing the liquid crystal layer 300 through a predetermined spacer and bonding them together.

(2nd Example)

6 is a plan view schematically illustrating a FFS mode liquid crystal display device according to a second embodiment of the present invention, FIG. 7 is a cross-sectional view taken along line III-III ′ according to the first example of FIG. 6, and FIG. FIG. 9 is a cross-sectional view taken along line IV-IV 'according to the first example, and FIG. 9 is a cross-sectional view taken along line III-III' according to the second example of FIG. 6, and FIG. 10 is a cross-sectional view taken along line IV-IV ′ according to the second example of FIG. 6. 11 is a cross-sectional view taken along line III-III ′ according to the third example of FIG. 6, and FIG. 12 is a cross-sectional view taken along line IV-IV ′ according to the third example of FIG. 6.

6 to 12, the FFS mode liquid crystal display device according to the second embodiment of the present invention, like the first embodiment of the present invention, the upper substrate 100 and the lower substrate 200 which are bonded to face each other. And a liquid crystal layer 300 filled in a liquid crystal space provided by two substrates and a spacer (not shown).

Here, the upper substrate 100 is also commonly referred to as a color filter array substrate, and is mainly composed of an insulating substrate 110, a black matrix 120, a color filter 130, and the like. Since the same components, a detailed description of the configuration and operation effects thereof will be omitted.

The lower substrate 200 is also commonly referred to as a thin film transistor array substrate, and a thin film transistor (TFT), which is a switching element, is positioned in a matrix type on the insulating substrate 210, and a plurality of thin film transistors (TFTs) are provided. Gate line (GL) and data line (Data Line, DL) passing through the () is formed, since the same components as the first embodiment of the present invention, the specific configuration and effect The description will be omitted.

Meanwhile, referring to the difference from the first exemplary embodiment of the present invention, the reflective pattern 295 having an emboss shape is additionally formed between the transparent common electrode 220 and the low resistance metal line 290 to form a low resistance metal line. Since the structure of 290 is formed of an embossed reflection plate, the transmission efficiency can be increased through internal reflection by external light without additional aperture ratio reduction.

Specifically, for example, a silicon nitride film (SiNx) or a resin (Resin) may be formed on the transparent common electrode 220 of the non-opening region (or impermeable region) in which the gate line GL and the data line DL are formed. An embossed reflection pattern 295 formed of an insulating material is formed.

The low resistance metal line 290 for reducing the resistance of the transparent common electrode 220 is formed on the entire upper surface of the reflective pattern 295 to be electrically connected to the transparent common electrode 220.

In addition, by opening the black matrix 120 and the color filter 130 of the upper substrate 100 corresponding to the reflective pattern 295 of the embossing shape, the incident amount of external light is increased to reduce the Through the diffuse reflection by the resistance metal line 290 may be maximized the transmission efficiency. In this case, light leakage is blocked by the low-resistance metal line 290, which is an embossed reflection plate, in the opening area of the black matrix 120, thereby effectively preventing problems such as contrast degradation.

In addition, an embossed reflection pattern 295 is not formed in part or the entirety of the black matrix 120, and the transparent common electrode 220 and the low resistance metal line 290 are directly connected to each other. desirable.

That is, as in the first embodiment of the present invention, the transparent common electrode 220 and the low resistance metal line 290 are electrically connected to effectively reduce the Vcom resistance, and the reflective pattern 295 having the embossed shape has a low resistance. It can be expected to be formed under the metal line 290 to increase the internal reflection efficiency.

As shown in FIGS. 9 and 10, the non-opening region (or opaque region) through which the gate line GL and the data line DL pass, without additionally forming an embossed reflection pattern 295. The insulating layer 240 may be partially etched to form an embossed reflective pattern 240a.

The transparent common electrode 220 is formed to have a plurality of combs by patterning the transparent conductive layer deposited on the insulating layer 240 including the embossed reflective pattern 240a. The transparent pixel electrode 230 and a predetermined region are provided. It is formed to overlap.

In addition, the low resistance metal line 290 for reducing the resistance of the transparent common electrode 220 is an embossed reflection pattern 240a region, that is, a non-opening region in which the gate line GL and the data line DL are formed. Or a predetermined thickness on the transparent common electrode 220 of the non-transmissive region, and is electrically connected to the transparent common electrode 220.

11 and 12, the location of the low resistance metal line 290 may be formed under the transparent common electrode 220 as necessary.

The low resistance metal line 290 is, for example, low resistance and high reflection metal material such as copper (Cu), aluminum (Al), aluminum alloy (AlNd: Aluminum Neodymium), molybdenum (Mo), molybdenum-tungsten (MoW) It is preferably made of.

As described above, the low resistance metal line 290 is formed to be electrically connected to the upper or lower portion of the transparent common electrode 220 in the non-opening region through which the gate line GL and the data line DL pass, thereby forming the transparent common electrode 220. By reducing the resistance of the panel, the common electrode line load (Vcom Load) in the liquid crystal panel (Panel) can be effectively reduced, and the screen such as Greenish or Flicker due to the increase of the common electrode line load (Vcom Load) It can effectively solve class problems.

In addition, not only a small size liquid crystal panel, but also a medium size size such as a notebook application, for example, a high-aperture-rate FFS structure capable of high brightness without decreasing aperture ratio or screen quality such as Greenish. It can be easily applied to a liquid crystal panel.

In addition, by forming the structure of the low resistance metal line 290 in the form of an embossing can increase the transmission efficiency through the internal reflection by the external light without reducing the aperture ratio, it is possible to implement a liquid crystal display device with excellent visibility outdoors. .

Next, the manufacturing method of the FFS mode liquid crystal display device according to the second embodiment of the present invention will be described in detail with reference to FIGS. 6 to 12.

6 to 12, first, in manufacturing the lower substrate 200, a gate line GL including the gate electrode 250 is formed on an insulating substrate 210. That is, the gate line GL including the gate electrode 250 is formed on the portion of the substrate 210 of the thin film transistor TFT forming unit by depositing and patterning an opaque metal film on the substrate 210.

Then, after the gate insulating film 260 is deposited over the entirety of the substrate 210 to cover the gate line GL including the gate electrode 250, the a-Si film and the n + a-Si film are sequentially deposited. The active patterns 270 are formed on the gate insulating layer 260 on the gate electrode 250 by patterning them. Next, the plate-type transparent pixel electrode 230 is formed on the gate insulating layer 260 to be disposed in each pixel region through deposition and patterning of the transparent conductive layer.

Then, the source / drain metal film is deposited, and then patterned to form a data line DL including the source / drain electrodes 280a and 280b, whereby the thin film transistor TFT is formed. Configure. In this case, the drain electrode 280b is formed to be electrically connected to the pixel electrode 230.

Subsequently, after applying the insulating layer 240 made of, for example, silicon nitride film (SiNx), to the resulting structure on which the thin film transistor TFT is formed, a transparent common having a comb-tooth shape to overlap at least a portion of the transparent pixel electrode 230. The electrode 220 is formed.

Thereafter, an embossed reflection pattern 295 is formed on the transparent common electrode 220 in the non-opening region through which the gate line GL and the data line DL pass, by a conventional etching process. In this case, the reflective pattern 295 is preferably made of an insulating material such as silicon nitride (SiNx) or resin.

Then, for example, copper (Cu), aluminum (Al), aluminum alloy (AlNd: Aluminum Neodymium), molybdenum (Mo) to be electrically connected to the transparent common electrode 220 on the entire upper surface of the reflective pattern 295. And a low resistance metal line 290 made of a low resistance metal material of at least one of titanium (Ti) or molybdenum-tungsten (MoW) or at least one alloy.

Meanwhile, as shown in FIGS. 9 and 10, the gate line GL and the data line DL are not formed without additionally forming the embossed reflection pattern 295, that is, without a separate additional mask process for forming the emboss. The insulating layer 240 of the non-opening region (or impervious region) passing through is partially etched to form an embossed reflective pattern 240a, and then deposited on the insulating layer 240 including the reflective pattern 240a. The transparent common electrode 220 may be formed to have a plurality of comb teeth by patterning the transparent conductive layer so as to overlap a predetermined area with the transparent pixel electrode 230.

Then, the low-resistance metal line 290 for reducing the resistance of the transparent common electrode 220 is electrically connected to the transparent common electrode 220 region of the embossed reflective pattern 240a, that is, the gate line GL. And a predetermined thickness on the transparent common electrode 220 of the non-opening region (or opaque region) where the data line DL is formed.

11 and 12, the low resistance metal line 290 is first formed before the transparent common electrode 220 is formed, and then the transparent pixel electrode 230 and at least a portion thereof are formed on the low resistance metal line 290. A transparent common electrode 220 having a comb tooth shape may be formed to overlap.

Finally, the upper substrate 100 including the black matrix 120 and the color filter 130 is disposed to be spaced apart by a predetermined interval so as to face the lower substrate 200, and then the upper substrate 100 and the lower substrate 200 The manufacturing of the FFS mode liquid crystal display device according to the second embodiment of the present invention is completed by interposing the liquid crystal layer 300 through a predetermined spacer and bonding them together.

Although a preferred embodiment of the above-described FFS mode liquid crystal display device and a method of manufacturing the same according to the present invention has been described, the present invention is not limited thereto, and various claims are made within the scope of the claims and the detailed description of the invention and the accompanying drawings. It is possible to carry out the transformation to this also belongs to the present invention.

1 is a plan view schematically showing an FFS mode liquid crystal display device according to a first embodiment of the present invention;

2 is a cross-sectional view taken along line II ′ of the first example of FIG. 1.

3 is a cross-sectional view taken along line II-II 'of the first example of FIG.

4 is a cross-sectional view taken along line II ′ of the second example of FIG. 1.

5 is a cross-sectional view taken along line II-II ′ according to the second example of FIG. 1.

6 is a plan view schematically illustrating an FFS mode liquid crystal display device according to a second embodiment of the present invention;

7 is a cross-sectional view taken along line III-III ′ according to the first example of FIG. 6.

8 is a cross-sectional view taken along a line IV-IV 'according to the first example of FIG.

9 is a cross-sectional view taken along line III-III ′ according to the second example of FIG. 6.

10 is a cross-sectional view taken along a line IV-IV 'according to a second example of FIG.

11 is a cross-sectional view taken along line III-III ′ according to the third example of FIG. 6.

12 is a cross-sectional view taken along a line IV-IV 'according to a third example of FIG.

Claims (19)

A lower substrate, an upper substrate, and a liquid crystal layer interposed between the substrates, and each pixel region is defined by gates and data lines formed in cross directions in the lower substrates. In the FFS mode liquid crystal display device wherein the switching element is arranged at the intersection of the In order to control the amount of light transmission by applying an electric field to the liquid crystal layer, the transparent pixel electrode is disposed in the pixel region, and the transparent pixel electrode is formed in a non-opening region in which the pixel region, the gate line, and the data line are formed. It is provided with a transparent common electrode spaced apart from, And a metal line having a predetermined thickness is electrically connected to the transparent common electrode above or below the transparent common electrode of the non-opening region in which the gate line and the data line are formed. The method of claim 1, And an embossed reflection pattern is formed on the insulating layer of the non-opening region where the gate line and the data line are formed through partial etching. A lower substrate, an upper substrate, and a liquid crystal layer interposed between the substrates, and each pixel region is defined by gates and data lines formed in cross directions in the lower substrates. In the FFS mode liquid crystal display device wherein the switching element is arranged at the intersection of the In order to control the amount of light transmission by applying an electric field to the liquid crystal layer, the transparent pixel electrode is disposed in the pixel region, and the transparent pixel electrode is formed in a non-opening region in which the pixel region, the gate line, and the data line are formed. It is provided with a transparent common electrode spaced apart from, An embossed reflective pattern is formed on the transparent common electrode of the non-opening region where the gate line and the data line are formed, and a metal line having a predetermined thickness is electrically connected to the common electrode on the entire upper surface of the reflective pattern. An FFS mode liquid crystal display device, characterized in that. The method of claim 3, wherein And the reflective pattern is made of an insulating material of silicon nitride (SiNx) or resin. The method according to any one of claims 1 to 4, And a black matrix is formed on the upper substrate only in an area corresponding to the switching element. The method according to any one of claims 1 to 4, And at least a portion of the color filter formed in the upper substrate corresponding to the non-opening region in which the gate line and the data line are formed is opened. The method according to any one of claims 1 to 4, The metal line may be formed of at least one of copper (Cu), aluminum (Al), aluminum alloy (AlNd: Aluminum Neodymium), molybdenum (Mo), titanium (Ti), or molybdenum-tungsten (MoW), or any one or more alloys. An FFS mode liquid crystal display comprising a resistive metal material. The method according to any one of claims 1 to 4, And the transparent pixel electrode is formed in a plate shape, and the transparent common electrode is formed in a slit type. The method according to any one of claims 1 to 4, And the transparent pixel electrode is disposed under the transparent common electrode. The method according to any one of claims 1 to 4, And the transparent pixel electrode is disposed on the same layer as the data line. Each pixel region is defined by a gate line and a data line including a lower substrate, an upper substrate, and a liquid crystal layer interposed between the substrates, and formed in a direction crossing each other. In the manufacturing method of the FFS mode liquid crystal display device in which a switching element is arrange | positioned, The lower substrate, Forming a gate line including a gate electrode on the substrate; After sequentially depositing a gate insulating film, an a-Si film, and an n + a-Si film on the substrate to cover the gate line including the gate electrode, the a-Si film and the n + a-Si film are etched on the gate electrode to form an active layer. Forming a pattern; Forming a transparent pixel electrode on each of the pixel regions on the gate insulating layer; Forming a switching element by forming a data line including a source / drain electrode on an active pattern on the gate insulating layer and on the gate electrode; After applying an insulating layer on the resultant structure, forming a transparent common electrode to be spaced apart from the transparent pixel electrode in a non-opening region in which the pixel region, the gate line and the data line are formed; And And forming a metal line having a predetermined thickness to be electrically connected to the transparent common electrode of the non-opening region through which the gate and the data line pass. The method of claim 11, Embossing as an insulating material of silicon nitride (SiNx) or resin (Resin) on the transparent common electrode of the non-opening region through which the gate line and the data line pass between forming the transparent common electrode and forming the metal line Forming a reflective pattern of the form further comprising the manufacturing method of the FFS mode liquid crystal display device. The method of claim 11, After applying the insulating layer on the resulting structure of the switching device, and before forming the transparent common electrode to be spaced apart from the transparent pixel electrode in the non-opening region where the pixel region and the gate line and the data line is formed And partially etching the insulating layer of the non-opening region through which the gate line and the data line pass to form an embossed reflection pattern. Each pixel region is defined by a gate line and a data line including a lower substrate, an upper substrate, and a liquid crystal layer interposed between the substrates, and formed in a direction crossing each other. In the manufacturing method of the FFS mode liquid crystal display device in which a switching element is arrange | positioned, The lower substrate, Forming a gate line including a gate electrode on the substrate; After sequentially depositing a gate insulating film, an a-Si film, and an n + a-Si film on the substrate to cover the gate line including the gate electrode, the a-Si film and the n + a-Si film are etched on the gate electrode to form an active layer. Forming a pattern; Forming a transparent pixel electrode on each of the pixel regions on the gate insulating layer; Forming a switching element by forming a data line including a source / drain electrode on an active pattern on the gate insulating layer and on the gate electrode; Applying an insulating layer on the resulting structure, and then forming a metal line having a predetermined thickness on the insulating layer in the non-opening region through which the gate and the data line pass; And Forming a transparent common electrode on the insulating layer including the metal line, the transparent common electrode being spaced apart from the transparent pixel electrode in the non-opening region in which the pixel region, the gate line and the data line are formed and electrically connected to the metal line. A method of manufacturing an FFS mode liquid crystal display device, characterized in that. The method of claim 14, After applying the insulating layer on the resultant structure having the switching element, before forming the metal line, the insulating layer of the non-opening region through which the gate line and the data line pass is etched to form an embossed reflective pattern. The manufacturing method of the FFS mode liquid crystal display device further comprising the step of. The method according to any one of claims 11 to 15, And forming a black matrix on the upper substrate only in a region corresponding to the switching element. The method according to any one of claims 11 to 15, And opening at least a portion of the color filter formed in the upper substrate corresponding to the non-opening region in which the gate line and the data line are formed. The method according to any one of claims 11 to 15, The metal line may be formed of at least one of copper (Cu), aluminum (Al), aluminum alloy (AlNd: Aluminum Neodymium), molybdenum (Mo), titanium (Ti), or molybdenum-tungsten (MoW), or any one or more alloys. A method of manufacturing an FFS mode liquid crystal display device, characterized in that it is formed of a resistive metal material. The method according to any one of claims 11 to 15, The transparent pixel electrode may be formed in a plate shape, and the transparent common electrode may be formed in a slit shape.

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