KR100700000B1 - 표시장치와 그 제조방법 - Google Patents
표시장치와 그 제조방법 Download PDFInfo
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- KR100700000B1 KR100700000B1 KR1020040083756A KR20040083756A KR100700000B1 KR 100700000 B1 KR100700000 B1 KR 100700000B1 KR 1020040083756 A KR1020040083756 A KR 1020040083756A KR 20040083756 A KR20040083756 A KR 20040083756A KR 100700000 B1 KR100700000 B1 KR 100700000B1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3125—Layers comprising organo-silicon compounds layers comprising silazane compounds
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (20)
- 기판 상에 형성된 소자부;상기 소자부를 봉지하는 봉지부재;상기 기판 및 상기 봉지부재를 감싸는 소수성 절연막; 및상기 기판과 상기 소수성 절연막 사이 및 상기 봉지부재와 상기 소수성 절연막 사이에 개재된 접착 강화층을 포함하는 표시장치.
- 제 1 항에 있어서,상기 접착 강화층은 상기 기판의 표면을 개질하는 기능을 가진 것을 특징으로 하는 표시장치.
- 제 1 항에 있어서,상기 접착 강화층은 상기 기판 및 상기 봉지부재에 대하여 30~100%의 표면 커버리지를 갖는 것을 특징으로 하는 표시장치.
- 제 1 항에 있어서,상기 접착 강화층은 실란 또는 실라잔으로 형성된 것을 특징으로 하는 표시장치
- 제 4 항에 있어서,상기 실란(silane)은 하기의 화학식으로 표시되는 물질인 것을 특징으로 하는 표시장치.<화학식 1>상기 식에서 R1은 히드록시기, 할로겐기, 1 내지 6의 탄소수를 갖는 선형 알콕시기 및 1 내지 6의 탄소수를 갖는 가지형 알콕시기로 이루어진 군에서 선택된 하나이고, 상기 식의 R2 및 R3는 서로에 관계없이 히드록시기, 할로겐기, 1 내지 6의 탄소수를 갖는 선형알콕시기, 1 내지 6의 탄소수를 갖는 가지형 알콕시기, 1 내지 22의 탄소수를 갖는 선형 알킬기, 1내지 22의 탄소수를 갖는 가지형 알킬기, 3내지 7의 탄소수를 갖는 고리형 알킬기, 페닐기, 나프틸기, 및 클로로페닐기로 이루어진 군에서 선택된 하나이고, 상기 식의 R4는 1 내지 22의 탄소수를 갖는 선형 알킬기, 1내지 22의 탄소수를 갖는 가지형 알킬기, 3내지 7의 탄소수를 갖는 고리형 알킬기, 페닐기, 나프틸기, 및 클로로페닐기로 이루어진 군에서 선택된 하나이다.
- 제 1 항에 있어서,상기 소수성 절연막은 파릴렌(parylene)막인 것을 특징으로 하는 표시장치.
- 제 1 항에 있어서,상기 소자부와 외부 회로 모듈을 연결하기 위한 패드부; 및상기 패드부와 상기 외부 회로 모듈을 연결하는 커넥터를 더욱 포함하는 것을 특징으로 하는 표시장치.
- 제 9 항에 있어서,상기 소수성 절연막은 상기 패드부 및 상기 커넥터의 일부를 감싸는 것을 포함하는 표시장치.
- 제 1 항에 있어서,상기 소자부는 유기전계발광소자 또는 액정표시소자를 포함하는 표시장치.
- 기판 상에 소자부를 형성하는 단계;상기 소자부를 봉지부재를 사용하여 봉지하는 단계;상기 기판 및 상기 봉지부재를 감싸는 접착 강화층을 형성하는 단계; 및상기 접착 강화층 상에 소수성 절연막을 형성하는 단계를 포함하는 표시장치의 제조방법.
- 제 12 항에 있어서,상기 접착 강화층은 상기 기판의 표면을 개질하는 물질로 형성하는 것을 특징으로 하는 표시장치의 제조방법.
- 제 13 항에 있어서,상기 접착 강화층은 상기 기판 및 상기 봉지부재에 대하여 30~100%의 표면 커버리지를 갖도록 형성하는 것을 특징으로 하는 표시장치의 제조방법.
- 제 13 항에 있어서,상기 접착 강화층은 실란 또는 실라잔으로 형성하는 것을 특징으로 하는 표시장치의 제조방법.
- 제 15 항에 있어서,상기 실란 또는 실라잔으로 상기 접착 강화층을 형성하는 것은 기상증착법을 사용하여 형성하는 것인 표시장치의 제조방법.
- 제 15 항에 있어서,상기 실란 또는 실라잔으로 형성된 상기 접착 강화층을 150℃ 이하의 온도에서 경화를 시키는 것을 포함하는 표시장치의 제조방법.
- 제 12 항에 있어서,상기 소수성 절연막은 파릴렌(parylene)을 사용하여 형성하는 것을 특징으로 하는 표시장치의 제조방법.
- 제 18 항에 있어서,상기 파릴렌(parylene)보호막은 기상증착법을 사용하여 형성하는 것을 특징으로 하는 표시장치의 제조방법.
- 제 19 항에 있어서,상기 기상증착법을 사용하여 형성하는 것은 기판 또는 챔버의 온도가 10 내지 120℃의 온도에서 형성하는 것인 표시장치의 제조방법.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040083756A KR100700000B1 (ko) | 2004-10-19 | 2004-10-19 | 표시장치와 그 제조방법 |
US11/251,783 US20060082299A1 (en) | 2004-10-19 | 2005-10-18 | Display and method for fabricating the same |
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KR1020040083756A KR100700000B1 (ko) | 2004-10-19 | 2004-10-19 | 표시장치와 그 제조방법 |
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KR20060034585A KR20060034585A (ko) | 2006-04-24 |
KR100700000B1 true KR100700000B1 (ko) | 2007-03-26 |
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KR1020040083756A KR100700000B1 (ko) | 2004-10-19 | 2004-10-19 | 표시장치와 그 제조방법 |
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KR (1) | KR100700000B1 (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101362159B1 (ko) * | 2007-07-05 | 2014-02-13 | 엘지디스플레이 주식회사 | 발광 표시 패널 및 그 제조 방법 |
KR100903621B1 (ko) * | 2007-11-22 | 2009-06-18 | 삼성모바일디스플레이주식회사 | 표시 장치 |
JP2010055918A (ja) * | 2008-08-28 | 2010-03-11 | Seiko Epson Corp | 電気光学装置、電気光学装置の製造方法、及び電子機器 |
KR101108157B1 (ko) * | 2009-11-19 | 2012-01-31 | 삼성모바일디스플레이주식회사 | 유기 발광 디스플레이 장치 |
FI122616B (fi) * | 2010-02-02 | 2012-04-30 | Beneq Oy | Vahvistettu rakennemoduuli ja sen valmistusmenetelmä |
KR101255537B1 (ko) | 2010-11-26 | 2013-04-16 | 삼성디스플레이 주식회사 | 평판 표시 장치 및 그 제조방법 |
KR102022123B1 (ko) * | 2012-09-05 | 2019-09-17 | 리쿠아비스타 비.브이. | 표시기판, 이의 제조방법 및 이를 포함하는 전기습윤 표시패널 |
KR102060061B1 (ko) * | 2013-04-29 | 2019-12-30 | 삼성디스플레이 주식회사 | 유기 전계 발광 표시 장치 및 그 제조 방법 |
CN103956373A (zh) * | 2013-12-18 | 2014-07-30 | 上海天马有机发光显示技术有限公司 | 一种疏水有机薄膜封装的有机发光显示装置及其制造方法 |
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2004
- 2004-10-19 KR KR1020040083756A patent/KR100700000B1/ko active IP Right Grant
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2005
- 2005-10-18 US US11/251,783 patent/US20060082299A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000040586A (ja) | 1998-07-21 | 2000-02-08 | Tdk Corp | 有機el素子モジュール |
JP2001093661A (ja) | 1999-09-22 | 2001-04-06 | Semiconductor Energy Lab Co Ltd | El表示装置及び電子装置 |
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Publication number | Publication date |
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KR20060034585A (ko) | 2006-04-24 |
US20060082299A1 (en) | 2006-04-20 |
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