KR100484515B1 - 유전체 자기 조성물 및 전자부품 - Google Patents
유전체 자기 조성물 및 전자부품 Download PDFInfo
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- KR100484515B1 KR100484515B1 KR10-2002-7011085A KR20027011085A KR100484515B1 KR 100484515 B1 KR100484515 B1 KR 100484515B1 KR 20027011085 A KR20027011085 A KR 20027011085A KR 100484515 B1 KR100484515 B1 KR 100484515B1
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- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
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Abstract
Description
Claims (12)
- 티탄산바륨을 포함하는 주성분과,AE 산화물을 포함하는 제1부성분과,R 산화물을 포함하는 제2부성분을 갖고,상기 AE는 Mg, Ca, Ba 및 Sr 중에서 선택되는 적어도 1종이고,상기 R은 Y, Dy, Ho 및 Er 중에서 선택되는 적어도 1종이며,상기 주성분 100mol에 대한 각 부성분의 비율이,제1부성분: 0mol<제1부성분<0.1mol,제2부성분: 1mol<제2부성분<7mol인 유전체 자기 조성물.
- 제 1 항에 있어서, 제1부성분의 mol수에 대한 제2부성분의 mol수의 비(제2부성분/제1부성분)가 10<(제2부성분/제1부성분)<500인 유전체 자기 조성물.
- 제 1 항 또는 제 2 항에 있어서, CaZrO3 또는 CaO + ZrO2를 포함하는 제6부성분을 추가로 갖고, 상기 주성분 100mol에 대한 상기 제6부성분의 비율이 0mol<제6부성분<5mol인 유전체 자기 조성물.
- 제 1 항 또는 제 2 항에 있어서, MxSiO3를 포함하는 제3부성분을 추가로 갖고,상기 M은 Ba, Ca, Sr, Li, B 중에서 선택되는 적어도 1종으로,M이 Ba인 경우에는 x=1, M이 Ca인 경우에는 x=1, M이 Sr인 경우에는 x=1, M이 Li인 경우에는 x=2, M이 B인 경우에는 x=2/3이며,상기 주성분 100mol에 대한 상기 제3부성분의 비율이 2mol≤제3부성분 ≤10mol인 유전체 자기 조성물.
- 제 1 항 또는 제 2 항에 있어서, Mn0 및 Cr2O3 중 적어도 1종을 포함하는 제4부성분을 추가로 갖고, 상기 주성분 100mol에 대한 상기 제4부성분의 비율이 0mol<제4부성분≤0.5mol인 유전체 자기 조성물.
- 제 1 항 또는 제 2 항에 있어서, V2O5, MoO3 및 WO3 중에서 선택되는 적어도 1종을 포함하는 제5부성분을 추가로 갖고, 상기 주성분 100mol에 대한 상기 제5부성분의 비율이 0.01mol≤제5부성분≤0.5mol인 유전체 자기 조성물.
- 유전체 자기 조성물로 구성되어 있는 유전체층을 갖는 전자부품에 있어서,상기 유전체 자기 조성물이 티탄산바륨을 포함하는 주성분과,AE 산화물을 포함하는 제1부성분과,R 산화물을 포함하는 제2부성분을 갖고,상기 AE는 Mg, Ca, Ba 및 Sr 중에서 선택되는 적어도 1종이고,상기 R은 Y, Dy, Ho 및 Er 중에서 선택되는 적어도 1종이며,상기 주성분 100mol에 대한 각 부성분의 비율이,제1부성분: 0mol<제1부성분<0.1 mol,제2부성분: 1mol<제2부성분<7mol인 전자부품.
- 제 7 항에 있어서, 제1부성분의 mol수에 대한 제2부성분의 mol수의 비(제2부성분/제1부성분)가 10<(제2부성분/제1부성분)<500인 전자부품.
- 제 7 항 또는 제 8 항에 있어서, CaZrO3 또는 CaO + ZrO2를 포함하는 제6부성분을 추가로 갖고, 상기 주성분 100mol에 대한 상기 제6부성분의 비율이 0mol<제6부성분<5mol인 전자부품.
- 제 7 항 또는 제 8 항에 있어서, MxSiO3를 포함하는 제3부성분을 추가로 갖고,상기 M은 Ba, Ca, Sr, Li, B 중에서 선택되는 적어도 1종으로,M이 Ba인 경우에는 x=1, M이 Ca인 경우에는 x=1, M이 Sr인 경우에는 x=1, M이 Li인 경우에는 x=2, M이 B인 경우에는 x=2/3이며,상기 주성분 100mol에 대한 상기 제3부성분의 비율이 2mol≤제3부성분 ≤10mol인 전자부품.
- 제 7 항 또는 제 8 항에 있어서, MnO 및 Cr2O3 중 적어도 1종을 포함하는 제4부성분을 추가로 갖고, 상기 주성분 100mol에 대한 상기 제4부성분의 비율이 0mol<제4부성분≤0.5 mol인 전자부품.
- 제 7 항 또는 제 8 항에 있어서, V2O5, MoO3 및 WO3 중에서 선택되는 적어도 1종을 포함하는 제5부성분을 추가로 갖고, 상기 주성분 100mol에 대한 상기 제5부성분의 비율이 0.01mol≤제5부성분≤0.5 mol인 전자부품.
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TWI275582B (en) * | 2004-08-30 | 2007-03-11 | Tdk Corp | Dielectric ceramic composition and electronic device |
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KR100852438B1 (ko) * | 2005-03-09 | 2008-08-14 | 티디케이가부시기가이샤 | 압전 자기 조성물 및 그 제조방법, 및 압전소자,압전소자의 제조방법 |
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US7541306B2 (en) * | 2007-01-17 | 2009-06-02 | Ferro Corporation | X8R dielectric composition for use with nickel electrodes |
US7521390B2 (en) * | 2007-03-05 | 2009-04-21 | Ferro Corporation | Ultra low temperature fixed X7R and BX dielectric ceramic composition and method of making |
US8178458B2 (en) * | 2009-12-01 | 2012-05-15 | National Taiwan University Technology | Dielectric ceramic composition |
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US10155697B2 (en) | 2012-03-22 | 2018-12-18 | Holy Stone Enterprise Co., Ltd. | Composite dielectric ceramic material having anti-reduction and high temperature stability characteristics and method for preparing same |
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US20030125193A1 (en) | 2003-07-03 |
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CN100400463C (zh) | 2008-07-09 |
US6764976B2 (en) | 2004-07-20 |
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DE60129533T2 (de) | 2007-11-22 |
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