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KR100431044B1 - 자기 센서 및 그 제조 방법 - Google Patents

자기 센서 및 그 제조 방법 Download PDF

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Publication number
KR100431044B1
KR100431044B1 KR10-2001-7001588A KR20017001588A KR100431044B1 KR 100431044 B1 KR100431044 B1 KR 100431044B1 KR 20017001588 A KR20017001588 A KR 20017001588A KR 100431044 B1 KR100431044 B1 KR 100431044B1
Authority
KR
South Korea
Prior art keywords
magnetic sensor
thin film
layer
resistance
microns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2001-7001588A
Other languages
English (en)
Korean (ko)
Other versions
KR20010072297A (ko
Inventor
이찌로 시바사끼
아쯔시 오까모또
이찌로 오까다
다까시 요시다
Original Assignee
아사히 가세이 가부시키가이샤
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Publication date
Application filed by 아사히 가세이 가부시키가이샤 filed Critical 아사히 가세이 가부시키가이샤
Publication of KR20010072297A publication Critical patent/KR20010072297A/ko
Application granted granted Critical
Publication of KR100431044B1 publication Critical patent/KR100431044B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details
    • H10N52/85—Materials of the active region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
KR10-2001-7001588A 1998-08-07 1999-08-06 자기 센서 및 그 제조 방법 Expired - Fee Related KR100431044B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP22500898 1998-08-07
JP1998-225008 1998-08-07
JP1998-239225 1998-08-25
JP23922598 1998-08-25

Publications (2)

Publication Number Publication Date
KR20010072297A KR20010072297A (ko) 2001-07-31
KR100431044B1 true KR100431044B1 (ko) 2004-05-12

Family

ID=26526378

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-7001588A Expired - Fee Related KR100431044B1 (ko) 1998-08-07 1999-08-06 자기 센서 및 그 제조 방법

Country Status (9)

Country Link
US (1) US6590389B1 (de)
EP (2) EP1124271B8 (de)
JP (1) JP3916870B2 (de)
KR (1) KR100431044B1 (de)
CN (1) CN1185723C (de)
AU (1) AU5066599A (de)
DE (1) DE69936461T2 (de)
TW (1) TW393567B (de)
WO (1) WO2000008695A1 (de)

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CN100367526C (zh) 2001-10-01 2008-02-06 旭化成电子材料元件株式会社 霍尔器件和磁传感器
EP1469531A4 (de) * 2002-01-15 2007-07-18 Asahi Kasei Denshi Kk Zusammengesetzte mehrschichtige halbleiterstruktur, hall-einrichtung und herstellungsverfahren für eine hall-einrichtung
JP2004070543A (ja) * 2002-08-05 2004-03-04 Rohm Co Ltd ポインティング制御回路付き磁気センサ
US20060246692A1 (en) * 2003-02-26 2006-11-02 Yoshihiko Shibata Semiconductor sensor and method for manufacturing same
US6903429B2 (en) * 2003-04-15 2005-06-07 Honeywell International, Inc. Magnetic sensor integrated with CMOS
US7265543B2 (en) * 2003-04-15 2007-09-04 Honeywell International Inc. Integrated set/reset driver and magneto-resistive sensor
CN100438011C (zh) * 2004-03-24 2008-11-26 雅马哈株式会社 半导体装置、磁传感器和磁传感器单元
TW200736813A (en) 2005-12-16 2007-10-01 Asahi Kasei Denshi Kk Position detector
US7723814B2 (en) * 2005-12-27 2010-05-25 Asahi Kasei Kabushiki Kaisha InSb thin film magnetic sensor and fabrication method thereof
US7420365B2 (en) 2006-03-15 2008-09-02 Honeywell International Inc. Single chip MR sensor integrated with an RF transceiver
US7847536B2 (en) * 2006-08-31 2010-12-07 Itron, Inc. Hall sensor with temperature drift control
US8154280B2 (en) 2006-11-30 2012-04-10 Asahi Kasei Kabushiki Kaisha Thin film lamination, thin film magnetic sensor using the thin film lamination and method for manufacturing the thin film lamination
US8035932B2 (en) * 2007-09-20 2011-10-11 Hitachi Global Storage Technologies Netherlands B.V. Lorentz magnetoresistive sensor with integrated signal amplification
US7800381B2 (en) * 2007-09-26 2010-09-21 Infineon Technologies Ag Test structures, systems, and methods for semiconductor devices
US8559139B2 (en) * 2007-12-14 2013-10-15 Intel Mobile Communications GmbH Sensor module and method for manufacturing a sensor module
US8963545B2 (en) * 2009-06-30 2015-02-24 Asahi Kasei Microdevices Corporation Magnetic sensor
CN102298126B (zh) * 2011-01-17 2013-03-13 江苏多维科技有限公司 独立封装的桥式磁场传感器
US8988072B2 (en) 2011-07-21 2015-03-24 Infineon Technologies Ag Vertical hall sensor with high electrical symmetry
US9007060B2 (en) 2011-07-21 2015-04-14 Infineon Technologies Ag Electronic device with ring-connected hall effect regions
US9312472B2 (en) 2012-02-20 2016-04-12 Infineon Technologies Ag Vertical hall device with electrical 180 degree symmetry
KR20140077590A (ko) * 2012-12-14 2014-06-24 삼성전기주식회사 홀 센서 및 그 제조 방법
TWI619280B (zh) * 2014-04-01 2018-03-21 友達光電股份有限公司 感測元件
US9279864B2 (en) * 2014-05-16 2016-03-08 Infineon Technologies Ag Sensor device and sensor arrangement
JP2016166782A (ja) * 2015-03-09 2016-09-15 エスアイアイ・セミコンダクタ株式会社 磁気センサ装置
CN105470383A (zh) * 2015-12-31 2016-04-06 江苏森尼克电子科技有限公司 一种具有预埋电极的磁敏器件及制造工艺
CN105470382A (zh) * 2015-12-31 2016-04-06 江苏森尼克电子科技有限公司 一种具有延伸电极的磁敏器件及制造工艺
JP6583208B2 (ja) * 2016-10-14 2019-10-02 株式会社デンソー 磁気検出素子
US10760981B2 (en) * 2016-11-18 2020-09-01 Asahi Kasei Microdevices Corporation Hall sensor
CN107452873B (zh) * 2017-07-28 2020-09-04 苏州矩阵光电有限公司 一种霍尔元件及其制备方法
CN113597542A (zh) * 2019-03-20 2021-11-02 纬湃技术有限公司 角度检测装置

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JPS5948970A (ja) * 1982-09-13 1984-03-21 Pioneer Electronic Corp 磁電変換素子
JPH0677556A (ja) * 1991-07-16 1994-03-18 Asahi Chem Ind Co Ltd 半導体センサおよびその製造方法

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JPS59159565A (ja) * 1983-03-02 1984-09-10 Sankyo Seiki Mfg Co Ltd 磁気検出装置
JPS6428576A (en) * 1987-07-24 1989-01-31 Ube Industries Magnetic body detector
JPH0258880A (ja) * 1988-08-24 1990-02-28 Matsushita Electric Ind Co Ltd 半導体磁気抵抗素子
JPH06103761B2 (ja) * 1989-04-14 1994-12-14 株式会社村田製作所 ４相差動回転センサー
JPH0348650A (ja) * 1989-07-14 1991-03-01 Mitsubishi Kasei Corp 単環性テルペン誘導体
JP2557998B2 (ja) 1990-04-04 1996-11-27 旭化成工業株式会社 ＩｎＡｓホール効果素子
DE69232236T2 (de) * 1991-07-16 2002-08-08 Asahi Kasei Kogyo K.K., Osaka Halbleiter-sensor und seine herstellungsmethode
JP3133102B2 (ja) * 1991-08-02 2001-02-05 新日本無線株式会社 半導体磁気抵抗素子
JPH0566133A (ja) * 1991-09-09 1993-03-19 Matsushita Electric Ind Co Ltd 磁気式回転センサ
JP3180378B2 (ja) * 1991-09-11 2001-06-25 松下電器産業株式会社 半導体薄膜の製造方法および半導体磁気抵抗素子の製造方法
JPH06125122A (ja) * 1992-10-09 1994-05-06 Nippon Autom Kk 磁気抵抗素子及びその取付基板並びに該磁気抵抗素子と取付基板を用いた磁気センサ
JP2888074B2 (ja) 1993-01-25 1999-05-10 三菱電機株式会社 磁気抵抗素子
JP3288483B2 (ja) 1993-06-22 2002-06-04 川崎製鉄株式会社 耐衝撃性に優れる薄鋼板およびその製造方法
JPH07147438A (ja) * 1993-11-24 1995-06-06 Murata Mfg Co Ltd 磁電変換素子
JPH0888423A (ja) * 1994-09-19 1996-04-02 Asahi Chem Ind Co Ltd 磁気センサ
JP3681425B2 (ja) * 1995-01-24 2005-08-10 旭化成エレクトロニクス株式会社 ＧａＡｓホール素子
JPH08242027A (ja) * 1995-03-03 1996-09-17 Mitsubishi Electric Corp 磁気抵抗素子回路
JP3453967B2 (ja) * 1995-11-28 2003-10-06 松下電器産業株式会社 半導体薄膜磁気抵抗素子
JPH09203748A (ja) * 1996-01-29 1997-08-05 Tokin Corp 半導体加速度センサ
JPH09219547A (ja) 1996-02-09 1997-08-19 Sony Corp 磁気抵抗素子
JP3548761B2 (ja) * 1996-07-12 2004-07-28 株式会社東海ヒット 顕微鏡観察用透明恒温培養容器
JPH1074308A (ja) * 1996-08-30 1998-03-17 Hitachi Ltd 磁気スイッチング素子及びそれを用いた磁気センサと磁気記録再生装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948970A (ja) * 1982-09-13 1984-03-21 Pioneer Electronic Corp 磁電変換素子
JPH0677556A (ja) * 1991-07-16 1994-03-18 Asahi Chem Ind Co Ltd 半導体センサおよびその製造方法

Also Published As

Publication number Publication date
JP3916870B2 (ja) 2007-05-23
EP1124271A4 (de) 2005-01-26
AU5066599A (en) 2000-02-28
WO2000008695A1 (fr) 2000-02-17
KR20010072297A (ko) 2001-07-31
EP1124271A1 (de) 2001-08-16
EP1124271B8 (de) 2007-09-19
EP1124271B1 (de) 2007-07-04
US6590389B1 (en) 2003-07-08
CN1185723C (zh) 2005-01-19
CN1316104A (zh) 2001-10-03
TW393567B (en) 2000-06-11
DE69936461D1 (de) 2007-08-16
DE69936461T2 (de) 2008-03-13
EP1813954A1 (de) 2007-08-01

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