[go: up one dir, main page]

KR100293132B1 - 전극구조,그제조공정및전극을포함하는광전발생장치 - Google Patents

전극구조,그제조공정및전극을포함하는광전발생장치 Download PDF

Info

Publication number
KR100293132B1
KR100293132B1 KR1019970068522A KR19970068522A KR100293132B1 KR 100293132 B1 KR100293132 B1 KR 100293132B1 KR 1019970068522 A KR1019970068522 A KR 1019970068522A KR 19970068522 A KR19970068522 A KR 19970068522A KR 100293132 B1 KR100293132 B1 KR 100293132B1
Authority
KR
South Korea
Prior art keywords
conductive
electrode
electrode structure
metal member
busbar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019970068522A
Other languages
English (en)
Korean (ko)
Other versions
KR19980064117A (ko
Inventor
히로후미 이찌노세
아끼오 하세베
쯔또무 무라까미
사또시 신꾸라
유끼에 우에노
Original Assignee
미다라이 후지오
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미다라이 후지오, 캐논 가부시끼가이샤 filed Critical 미다라이 후지오
Publication of KR19980064117A publication Critical patent/KR19980064117A/ko
Application granted granted Critical
Publication of KR100293132B1 publication Critical patent/KR100293132B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1019970068522A 1996-12-13 1997-12-13 전극구조,그제조공정및전극을포함하는광전발생장치 Expired - Fee Related KR100293132B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP96-333475 1996-12-13
JP8333475A JPH10173210A (ja) 1996-12-13 1996-12-13 電極、その形成方法及び該電極を有する光起電力素子

Publications (2)

Publication Number Publication Date
KR19980064117A KR19980064117A (ko) 1998-10-07
KR100293132B1 true KR100293132B1 (ko) 2001-07-12

Family

ID=18266493

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970068522A Expired - Fee Related KR100293132B1 (ko) 1996-12-13 1997-12-13 전극구조,그제조공정및전극을포함하는광전발생장치

Country Status (5)

Country Link
US (1) US6051778A (ja)
EP (1) EP0848431A3 (ja)
JP (1) JPH10173210A (ja)
KR (1) KR100293132B1 (ja)
CN (1) CN1127150C (ja)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3031301B2 (ja) * 1997-06-25 2000-04-10 日本電気株式会社 銅配線構造およびその製造方法
JPH11186572A (ja) 1997-12-22 1999-07-09 Canon Inc 光起電力素子モジュール
SE518454C2 (sv) * 1999-01-15 2002-10-08 Forskarpatent I Uppsala Ab Metod för framställning av en elektrokemisk cell samt elektrokemisk cell
JP4009891B2 (ja) * 1999-11-17 2007-11-21 富士電機ホールディングス株式会社 薄膜太陽電池モジュールの製造方法
JP2007266648A (ja) * 1999-11-22 2007-10-11 Canon Inc 光起電力素子の製造方法、被覆線の被覆除去方法及び被覆線と導体の接合方法
JP4441102B2 (ja) 1999-11-22 2010-03-31 キヤノン株式会社 光起電力素子及びその製造方法
JP4467692B2 (ja) * 1999-12-22 2010-05-26 株式会社半導体エネルギー研究所 太陽電池及びその作製方法
JP4776748B2 (ja) * 1999-12-22 2011-09-21 株式会社半導体エネルギー研究所 太陽電池
JP2001345469A (ja) 2000-06-01 2001-12-14 Canon Inc 光起電力素子および光起電力素子の製造方法
JP2003031829A (ja) * 2001-05-09 2003-01-31 Canon Inc 光起電力素子
JP2003037277A (ja) 2001-05-15 2003-02-07 Canon Inc 光起電力素子及び光起電力素子の製造方法
JP2003003134A (ja) * 2001-06-20 2003-01-08 Japan Gore Tex Inc Ｉｃチップ接着用シートおよびｉｃパッケージ
US6716549B2 (en) * 2001-12-27 2004-04-06 Avista Laboratories, Inc. Fuel cell having metalized gas diffusion layer
US7056608B2 (en) 2003-02-14 2006-06-06 Relion, Inc. Current collector for use in a fuel cell
JP2004273245A (ja) * 2003-03-07 2004-09-30 Canon Inc 擬似太陽光照射方法および装置
US6939636B2 (en) * 2003-04-28 2005-09-06 Relion, Inc. Air cooled fuel cell module
US7308510B2 (en) * 2003-05-07 2007-12-11 Intel Corporation Method and apparatus for avoiding live-lock in a multinode system
JP2005005639A (ja) * 2003-06-16 2005-01-06 Canon Inc 太陽電池素子の光電変換特性の測定方法及び測定装置
US20040261838A1 (en) * 2003-06-25 2004-12-30 Hector Cotal Solar cell with an electrically insulating layer under the busbar
AU2004222793B2 (en) * 2003-10-27 2007-07-26 Mitsubishi Heavy Industries, Ltd. Solar cell and process for producing solar cell
JP2005142268A (ja) * 2003-11-05 2005-06-02 Canon Inc 光起電力素子およびその製造方法
DE602004032509D1 (de) * 2004-01-13 2011-06-16 Sanyo Electric Co Photovoltaisches Bauelement
DE102004050269A1 (de) * 2004-10-14 2006-04-20 Institut Für Solarenergieforschung Gmbh Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle
KR100647672B1 (ko) * 2004-12-24 2006-11-23 삼성에스디아이 주식회사 내열성 투명 전극, 이의 제조방법 및 이를 구비한염료감응 태양 전지
US8455753B2 (en) * 2005-01-14 2013-06-04 Semiconductor Energy Laboratory Co., Ltd. Solar cell and semiconductor device, and manufacturing method thereof
FR2880986B1 (fr) * 2005-01-20 2007-03-02 Commissariat Energie Atomique Procede de metallisation d'un dispositif semi-conducteur
US7554031B2 (en) 2005-03-03 2009-06-30 Sunpower Corporation Preventing harmful polarization of solar cells
KR101205627B1 (ko) * 2005-04-11 2012-11-27 외를리콘 솔라 아게, 트뤼프바흐 태양전지 모듈 및 이의 캡슐화 방법
JP4984458B2 (ja) * 2005-08-29 2012-07-25 ソニー株式会社 半導体装置
CN101601122B (zh) * 2007-01-31 2012-03-21 汉高股份两合公司 涂有填充的、可旋涂的材料的半导体晶片
US8212369B2 (en) * 2007-01-31 2012-07-03 Henkel Ag & Co. Kgaa Semiconductor wafer coated with a filled, spin-coatable material
JP5014890B2 (ja) * 2007-06-20 2012-08-29 パナソニック株式会社 電極芯線の接合方法
JP5191406B2 (ja) * 2009-01-16 2013-05-08 シャープ株式会社 太陽電池モジュールの製造方法
US8062920B2 (en) * 2009-07-24 2011-11-22 Ovshinsky Innovation, Llc Method of manufacturing a photovoltaic device
JP5755405B2 (ja) * 2009-11-02 2015-07-29 恵和株式会社 太陽電池モジュール裏面用放熱シート及びこれを用いた太陽電池モジュール
KR20170091167A (ko) 2010-02-09 2017-08-08 니치아 카가쿠 고교 가부시키가이샤 발광 장치
WO2011155052A1 (ja) * 2010-06-11 2011-12-15 株式会社アルバック 結晶系太陽電池セル及びその製造方法
CN101950771A (zh) * 2010-07-27 2011-01-19 中国科学院苏州纳米技术与纳米仿生研究所 一种复合电极的制备方法
US8187912B2 (en) 2010-08-27 2012-05-29 Primestar Solar, Inc. Methods of forming an anisotropic conductive layer as a back contact in thin film photovoltaic devices
US8338698B2 (en) 2010-08-27 2012-12-25 Primestar Solar, Inc. Anisotropic conductive layer as a back contact in thin film photovoltaic devices
FR2966158B1 (fr) * 2010-10-13 2012-10-19 Arkema France Film a base de polymere fluore pour application photovoltaique
CN103258867B (zh) * 2013-04-28 2016-04-13 宁波日地太阳能电力有限公司 一种硅太阳能电池的正面电极及其制备方法
CN108183140A (zh) * 2018-01-22 2018-06-19 卢泰 一种用于柔性薄膜太阳能电池的金属电极及其制作方法
US11222855B2 (en) 2019-09-05 2022-01-11 Skyworks Solutions, Inc. Moisture barrier for bond pads and integrated circuit having the same
CN111211180A (zh) * 2020-03-13 2020-05-29 成都晔凡科技有限公司 用于光电元件的复合电极、串联光电元件和光电模块
KR102711954B1 (ko) * 2020-12-11 2024-10-02 (주)아이테드 하이브리드 버스바 및 이를 포함하는 발열모듈
CN112750915B (zh) * 2021-03-03 2022-11-11 中国电子科技集团公司第十八研究所 一种薄膜砷化镓太阳电池上电极及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5457057A (en) * 1994-06-28 1995-10-10 United Solar Systems Corporation Photovoltaic module fabrication process
EP0710990A2 (en) * 1994-11-04 1996-05-08 Canon Kabushiki Kaisha Photovoltaic element and method for producing the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4260429A (en) * 1980-05-19 1981-04-07 Ses, Incorporated Electrode for photovoltaic cell
US4283591A (en) * 1980-05-22 1981-08-11 Ses, Incorporated Photovoltaic cell
JPS59167056A (ja) * 1983-03-12 1984-09-20 Agency Of Ind Science & Technol シリコン半導体電極
JPH036867A (ja) * 1989-06-05 1991-01-14 Mitsubishi Electric Corp 光発電素子の電極構造、形成方法、及びその製造装置
US5428249A (en) * 1992-07-15 1995-06-27 Canon Kabushiki Kaisha Photovoltaic device with improved collector electrode
JP2992638B2 (ja) * 1995-06-28 1999-12-20 キヤノン株式会社 光起電力素子の電極構造及び製造方法並びに太陽電池

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5457057A (en) * 1994-06-28 1995-10-10 United Solar Systems Corporation Photovoltaic module fabrication process
EP0710990A2 (en) * 1994-11-04 1996-05-08 Canon Kabushiki Kaisha Photovoltaic element and method for producing the same

Also Published As

Publication number Publication date
JPH10173210A (ja) 1998-06-26
CN1185040A (zh) 1998-06-17
US6051778A (en) 2000-04-18
CN1127150C (zh) 2003-11-05
EP0848431A3 (en) 1998-12-23
EP0848431A2 (en) 1998-06-17
KR19980064117A (ko) 1998-10-07

Similar Documents

Publication Publication Date Title
KR100293132B1 (ko) 전극구조,그제조공정및전극을포함하는광전발생장치
KR100242852B1 (ko) 광기전력 소자 및 그 제조 방법
US5681402A (en) Photovoltaic element
US6184458B1 (en) Photovoltaic element and production method therefor
KR100288866B1 (ko) 광기전력 장치 및 그 제조 방법
US5127964A (en) Flexible photovoltaic device
US6008451A (en) Photovoltaic device
EP0684652B1 (en) Photovoltaic element, electrode structure thereof, and process for producing the same
US6706961B2 (en) Photovoltaic device and process for the production thereof
EP2363864A1 (en) Conductive aluminum paste and the fabrication method thereof, the solar cell and the module thereof
JPH07106617A (ja) 透明電極及びその形成方法並びに該透明電極を用いた太陽電池
JPH06318724A (ja) 電極及び光起電力素子
JP4222992B2 (ja) 光起電力装置
JPH06318723A (ja) 光起電力素子およびその作製方法
KR0156268B1 (ko) 광기전력소자
JPH0519990B2 (ja)
JP2005277252A (ja) 光起電力装置
EP3573113B1 (en) Photovoltaic module
JPH053333A (ja) 太陽電池のリペア方法
JPH06318721A (ja) 太陽電池
JPH06318722A (ja) 太陽電池およびその製造方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19971213

PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19971213

Comment text: Request for Examination of Application

PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20000329

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20010313

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20010330

Patent event code: PR07011E01D

PR1002 Payment of registration fee
PG1601 Publication of registration
PR1001 Payment of annual fee
PR1001 Payment of annual fee
PR1001 Payment of annual fee
PR1001 Payment of annual fee
PR1001 Payment of annual fee
PR1001 Payment of annual fee
PR1001 Payment of annual fee
PR1001 Payment of annual fee
FPAY Annual fee payment

Payment date: 20120224

Year of fee payment: 12

PR1001 Payment of annual fee
FPAY Annual fee payment

Payment date: 20130221

Year of fee payment: 13

PR1001 Payment of annual fee
LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee