KR100244264B1 - 반도체 소자의 제조 방법 - Google Patents
반도체 소자의 제조 방법 Download PDFInfo
- Publication number
- KR100244264B1 KR100244264B1 KR1019960066694A KR19960066694A KR100244264B1 KR 100244264 B1 KR100244264 B1 KR 100244264B1 KR 1019960066694 A KR1019960066694 A KR 1019960066694A KR 19960066694 A KR19960066694 A KR 19960066694A KR 100244264 B1 KR100244264 B1 KR 100244264B1
- Authority
- KR
- South Korea
- Prior art keywords
- gate electrode
- epitaxial layer
- gate
- forming
- conductive
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000012535 impurity Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 150000004767 nitrides Chemical class 0.000 abstract description 16
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 7
- 238000000407 epitaxy Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 2
- 235000014653 Carica parviflora Nutrition 0.000 description 1
- 241000243321 Cnidaria Species 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
- H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/013—Manufacturing their source or drain regions, e.g. silicided source or drain regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0144—Manufacturing their gate insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0147—Manufacturing their gate sidewall spacers
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (3)
- 기판상의 소정부위에 차례로 제 1게이트 절연막, 제 1게이트 전극을 형성하는 단계, 상기 제 1게이트 전극 양측의 제 1도전형 기판상에 제 1절연막 측벽을 형성하는 단계, 상기 제 1게이트 전극상에 제 1캡 게이트 절연막을 형성하는 단계, 상기 제 1캡 게이트 절연막을 포함하여 전면에 제 1도전형 에피텍시층을 형성하는 단계, 상기 제 1게이트 전극 상측의 제 1도전형 에피텍시층상에 차례로 제 2게이트 절연막, 제 2게이트 전극과 제 2캡 게이트 절연막을 형성하는 단계, 상기 제 2게이트 전극 양측의 제 1도전형 에피텍시층 표면내에 저농도 제 2도전형 소오스/드레인 불순물 영역을 형성하는 단계, 상기 제 2게이트 전극 양측의 제 1도전형 에피텍시층상에 제 2절연막 측벽을 형성하는 단계, 상기 제 2 캡 게이트 절연막 양측의 제 1도전형 에피텍시층 표면내에 고농도 제 2도전형 소오드/드레인 불순물 영역을 형성하는 단계를 포함하여 이루어짐을 특징으로 하는 반도체소자의 제조방법.
- 제 1항에 있어서, 상기 제 1게이트 전극은 고농도 제 2도전형 불순물이 주입된 다결정실리콘으로 형성함을 특징으로 하는 반도체소자의 제조방법.
- 제 1항에 있어서, 상기 제 1캡 게이트 절연막을 산화막으로, 제 2캡 게이트 절연막을 HLD으로 형성함을 특징으로 하는 반도체소자의 제조 방법.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960066694A KR100244264B1 (ko) | 1996-12-17 | 1996-12-17 | 반도체 소자의 제조 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960066694A KR100244264B1 (ko) | 1996-12-17 | 1996-12-17 | 반도체 소자의 제조 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19980048144A KR19980048144A (ko) | 1998-09-15 |
| KR100244264B1 true KR100244264B1 (ko) | 2000-02-01 |
Family
ID=19488418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960066694A KR100244264B1 (ko) | 1996-12-17 | 1996-12-17 | 반도체 소자의 제조 방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100244264B1 (ko) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59154071A (ja) * | 1983-02-23 | 1984-09-03 | Toshiba Corp | 半導体装置 |
-
1996
- 1996-12-17 KR KR1019960066694A patent/KR100244264B1/ko not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59154071A (ja) * | 1983-02-23 | 1984-09-03 | Toshiba Corp | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR19980048144A (ko) | 1998-09-15 |
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