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JPS649615A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS649615A
JPS649615A JP62164581A JP16458187A JPS649615A JP S649615 A JPS649615 A JP S649615A JP 62164581 A JP62164581 A JP 62164581A JP 16458187 A JP16458187 A JP 16458187A JP S649615 A JPS649615 A JP S649615A
Authority
JP
Japan
Prior art keywords
amorphous layer
substrate
region
implanted
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62164581A
Other languages
English (en)
Inventor
Fumihiko Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62164581A priority Critical patent/JPS649615A/ja
Publication of JPS649615A publication Critical patent/JPS649615A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
JP62164581A 1987-07-01 1987-07-01 Manufacture of semiconductor device Pending JPS649615A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62164581A JPS649615A (en) 1987-07-01 1987-07-01 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62164581A JPS649615A (en) 1987-07-01 1987-07-01 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS649615A true JPS649615A (en) 1989-01-12

Family

ID=15795890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62164581A Pending JPS649615A (en) 1987-07-01 1987-07-01 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS649615A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0235715A (ja) * 1988-07-26 1990-02-06 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH05283355A (ja) * 1992-04-03 1993-10-29 Sharp Corp 半導体装置の製造方法
JPH06318559A (ja) * 1993-05-07 1994-11-15 Hitachi Ltd 高エネルギーイオン注入による半導体装置の製造方法
JP2009283638A (ja) * 2008-05-21 2009-12-03 Nippon Telegr & Teleph Corp <Ntt> 導波路型受光器の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0235715A (ja) * 1988-07-26 1990-02-06 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH05283355A (ja) * 1992-04-03 1993-10-29 Sharp Corp 半導体装置の製造方法
JPH06318559A (ja) * 1993-05-07 1994-11-15 Hitachi Ltd 高エネルギーイオン注入による半導体装置の製造方法
JP2009283638A (ja) * 2008-05-21 2009-12-03 Nippon Telegr & Teleph Corp <Ntt> 導波路型受光器の製造方法

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