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JPS5633840A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5633840A
JPS5633840A JP10916479A JP10916479A JPS5633840A JP S5633840 A JPS5633840 A JP S5633840A JP 10916479 A JP10916479 A JP 10916479A JP 10916479 A JP10916479 A JP 10916479A JP S5633840 A JPS5633840 A JP S5633840A
Authority
JP
Japan
Prior art keywords
film
implanting
emitter
eliminated
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10916479A
Other languages
Japanese (ja)
Inventor
Kunihiro Yagi
Masao Tamura
Shizunori Ooyu
Takashi Tokuyama
Keizo Inaba
Yoshikazu Yanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10916479A priority Critical patent/JPS5633840A/en
Publication of JPS5633840A publication Critical patent/JPS5633840A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE:To prevent the occurence of contamination at an interface between a semiconductor substrate and an insulating film by consisting the insulating film with a predetermined pattern which is provided on the surface of the semiconductor substrate as a mask wherein heat treatment is done in oxidized atmosphere after implanting an impurity ion. CONSTITUTION:A thermal oxide film 2 is formed on a silicon substrate 6 formed a base rigion 3 and after etching the film 2 with a predetermined pattern, a P+ implantation region 4 for emitter and high density phosphorus ion implantation layer 1 are formed by implanting a phosphorus ion. Next, for example, an SiO2 film 5 containing phosphorus is formed by heat treatment which is made for an hour at a relatively low temperature of 700-900 deg.C in damp oxygen. In this way, unnecessary contamination will be eliminated as the SiO2 film 5 is formed with an emitter or the like by a continuous process. And a crystal damage section goes with ion implantation will be eliminated as oxidation is made in the region showing slow velocity of propagation of crystal defect.
JP10916479A 1979-08-29 1979-08-29 Manufacture of semiconductor device Pending JPS5633840A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10916479A JPS5633840A (en) 1979-08-29 1979-08-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10916479A JPS5633840A (en) 1979-08-29 1979-08-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5633840A true JPS5633840A (en) 1981-04-04

Family

ID=14503266

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10916479A Pending JPS5633840A (en) 1979-08-29 1979-08-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5633840A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5246686A (en) * 1975-10-08 1977-04-13 Japan Storage Battery Co Ltd Device for igniting a dischrge lamp
JPS60138972A (en) * 1983-12-27 1985-07-23 Fuji Electric Corp Res & Dev Ltd Manufacturing method of insulated gate field effect transistor
US5015593A (en) * 1989-05-15 1991-05-14 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5246686A (en) * 1975-10-08 1977-04-13 Japan Storage Battery Co Ltd Device for igniting a dischrge lamp
JPS60138972A (en) * 1983-12-27 1985-07-23 Fuji Electric Corp Res & Dev Ltd Manufacturing method of insulated gate field effect transistor
US5015593A (en) * 1989-05-15 1991-05-14 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device

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