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JPS6489424A - Resist-pattern forming method - Google Patents

Resist-pattern forming method

Info

Publication number
JPS6489424A
JPS6489424A JP62246491A JP24649187A JPS6489424A JP S6489424 A JPS6489424 A JP S6489424A JP 62246491 A JP62246491 A JP 62246491A JP 24649187 A JP24649187 A JP 24649187A JP S6489424 A JPS6489424 A JP S6489424A
Authority
JP
Japan
Prior art keywords
resist
resist pattern
photoresist
specified
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62246491A
Other languages
Japanese (ja)
Inventor
Toru Okuma
Yoshimitsu Okuda
Yukio Takashima
Hirobumi Fukumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP62246491A priority Critical patent/JPS6489424A/en
Publication of JPS6489424A publication Critical patent/JPS6489424A/en
Pending legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To improve contrast without forming inverted trapezoidal shape for a resist pattern after development, by transferring and exposing a specified circuit pattern, heating and holding a substrate, projecting short wavelength light including a specified wavelength range in an nitrogen atmosphere, and decreasing the depth direction dependence of a resist dissolving speed in development. CONSTITUTION:A specified circuit pattern is transferred on photoresist by using a stepper. At this time, a light sensitive agent in the photoresist is optically decomposed. Said resist becomes soluble into alkali solution. Then a substrate is heated to 100 deg.C and held. Specified short wavelength light is projected on the entire main surface of the photoresist in a nitrogen atmosphere. The short wavelength light includes the wavelength range of 350-450nm. The depth direction dependence of a dissolving speed in the resist becomes less in comparison with a device, on which the light is not projected. The side cross section of the obtained resist pattern becomes a resist pattern part 1 and a substrate part 2. The formed resist pattern does not have an inverted trapezoidal shape. Thus the excellent resist pattern is formed.
JP62246491A 1987-09-30 1987-09-30 Resist-pattern forming method Pending JPS6489424A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62246491A JPS6489424A (en) 1987-09-30 1987-09-30 Resist-pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62246491A JPS6489424A (en) 1987-09-30 1987-09-30 Resist-pattern forming method

Publications (1)

Publication Number Publication Date
JPS6489424A true JPS6489424A (en) 1989-04-03

Family

ID=17149189

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62246491A Pending JPS6489424A (en) 1987-09-30 1987-09-30 Resist-pattern forming method

Country Status (1)

Country Link
JP (1) JPS6489424A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02264960A (en) * 1989-04-06 1990-10-29 Matsushita Electron Corp Resist pattern forming method
JPH02264961A (en) * 1989-04-06 1990-10-29 Matsushita Electron Corp Resist pattern forming method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6161154A (en) * 1984-09-03 1986-03-28 Oki Electric Ind Co Ltd Negative type resist composition and formation of fine resist pattern using said composition
JPS6254917A (en) * 1985-09-04 1987-03-10 Toshiba Corp Curing of photoresist
JPS62165650A (en) * 1986-01-14 1987-07-22 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Manufacture of positive photoresist
JPS6319821A (en) * 1986-07-14 1988-01-27 Hitachi Ltd Pattern formation and pattern transcriptor
JPS6370425A (en) * 1986-09-11 1988-03-30 Toshiba Corp Fine pattern forming method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6161154A (en) * 1984-09-03 1986-03-28 Oki Electric Ind Co Ltd Negative type resist composition and formation of fine resist pattern using said composition
JPS6254917A (en) * 1985-09-04 1987-03-10 Toshiba Corp Curing of photoresist
JPS62165650A (en) * 1986-01-14 1987-07-22 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Manufacture of positive photoresist
JPS6319821A (en) * 1986-07-14 1988-01-27 Hitachi Ltd Pattern formation and pattern transcriptor
JPS6370425A (en) * 1986-09-11 1988-03-30 Toshiba Corp Fine pattern forming method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02264960A (en) * 1989-04-06 1990-10-29 Matsushita Electron Corp Resist pattern forming method
JPH02264961A (en) * 1989-04-06 1990-10-29 Matsushita Electron Corp Resist pattern forming method

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