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JPS6476715A - Manufacture of polycrystalline semiconductor thin film - Google Patents

Manufacture of polycrystalline semiconductor thin film

Info

Publication number
JPS6476715A
JPS6476715A JP23432387A JP23432387A JPS6476715A JP S6476715 A JPS6476715 A JP S6476715A JP 23432387 A JP23432387 A JP 23432387A JP 23432387 A JP23432387 A JP 23432387A JP S6476715 A JPS6476715 A JP S6476715A
Authority
JP
Japan
Prior art keywords
film
laser
manufacture
irradiating
scanning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23432387A
Other languages
Japanese (ja)
Inventor
Kenji Sera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP23432387A priority Critical patent/JPS6476715A/en
Publication of JPS6476715A publication Critical patent/JPS6476715A/en
Pending legal-status Critical Current

Links

Landscapes

  • Silicon Compounds (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To manufacture a homogenous polycrystalline film in a large area with less film roughness by forming an intensity distribution of a laser beam uniformly in a longitudinal direction and in a trapezoidal or similar shape in a lateral direction, and irradiating a laser while scanning on a thin semiconductor film. CONSTITUTION:A hydrogenated amorphous silicon film 2 formed on a glass substrate 1 is polycrystallized by irradiating it with an excimer laser beam 4. In this case, the beam 4 from a laser device 7 is uniform in a longitudinal direction and has a trapezoidal intensity profile in a lateral direction, and it is laser-annealed by scanning it with the beam in this direction. As a result, it is annealed gradually in higher intensity at the same ground point, thereby obtaining a homogenous crystalline film 3 having no surface roughness.
JP23432387A 1987-09-17 1987-09-17 Manufacture of polycrystalline semiconductor thin film Pending JPS6476715A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23432387A JPS6476715A (en) 1987-09-17 1987-09-17 Manufacture of polycrystalline semiconductor thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23432387A JPS6476715A (en) 1987-09-17 1987-09-17 Manufacture of polycrystalline semiconductor thin film

Publications (1)

Publication Number Publication Date
JPS6476715A true JPS6476715A (en) 1989-03-22

Family

ID=16969204

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23432387A Pending JPS6476715A (en) 1987-09-17 1987-09-17 Manufacture of polycrystalline semiconductor thin film

Country Status (1)

Country Link
JP (1) JPS6476715A (en)

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5145808A (en) * 1990-08-22 1992-09-08 Sony Corporation Method of crystallizing a semiconductor thin film
US5372836A (en) * 1992-03-27 1994-12-13 Tokyo Electron Limited Method of forming polycrystalling silicon film in process of manufacturing LCD
US5413958A (en) * 1992-11-16 1995-05-09 Tokyo Electron Limited Method for manufacturing a liquid crystal display substrate
US5591668A (en) * 1994-03-14 1997-01-07 Matsushita Electric Industrial Co., Ltd. Laser annealing method for a semiconductor thin film
US5773309A (en) * 1994-10-14 1998-06-30 The Regents Of The University Of California Method for producing silicon thin-film transistors with enhanced forward current drive
US5968383A (en) * 1992-06-26 1999-10-19 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus having beam expander
US6159777A (en) * 1993-02-04 2000-12-12 Semiconductor Energy Laboratory Co., Ltd. Method of forming a TFT semiconductor device
US6174374B1 (en) 1991-05-28 2001-01-16 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US6194023B1 (en) 1997-09-25 2001-02-27 Kabushiki Kaisha Toshiba Method of manufacturing a poly-crystalline silicon film
KR100293524B1 (en) * 1999-05-28 2001-06-15 구본준 Crystallization Apparatus using Non-vacuum Process and Method thereof
US6329229B1 (en) 1993-11-05 2001-12-11 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device
US6524977B1 (en) * 1995-07-25 2003-02-25 Semiconductor Energy Laboratory Co., Ltd. Method of laser annealing using linear beam having quasi-trapezoidal energy profile for increased depth of focus
US6593216B1 (en) 1995-08-07 2003-07-15 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6596613B1 (en) 1995-02-02 2003-07-22 Semiconductor Energy Laboratory Co., Ltd. Laser annealing method
US6897100B2 (en) * 1993-11-05 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
US6919533B2 (en) 1995-05-31 2005-07-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a display device including irradiating overlapping regions
US6921685B2 (en) 2001-04-10 2005-07-26 Nec Lcd Technologies, Ltd. Method of fabricating thin film transistor
US7061017B2 (en) 1996-08-19 2006-06-13 Sanyo Electric Co., Ltd. Laser anneal method of a semiconductor layer
US7097712B1 (en) * 1992-12-04 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Apparatus for processing a semiconductor
US7151046B2 (en) 2003-10-24 2006-12-19 Hitachi Displays, Ltd. Semiconductor thin film decomposing method, decomposed semiconductor thin film, decomposed semiconductor thin film evaluation method, thin film transistor made of decomposed semiconductor thin film, and image display device having circuit constituted of thin film transistors
US7169657B2 (en) 1992-03-26 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
JP2007032044A (en) * 2005-07-26 2007-02-08 Sumitomo Metal Ind Ltd Support structure for foundation pile and steel pipe pile
US7179726B2 (en) 1992-11-06 2007-02-20 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
JP2007251196A (en) * 1995-07-25 2007-09-27 Semiconductor Energy Lab Co Ltd Manufacturing method of laser beam irradiation device and semiconductor device

Cited By (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5145808A (en) * 1990-08-22 1992-09-08 Sony Corporation Method of crystallizing a semiconductor thin film
US6174374B1 (en) 1991-05-28 2001-01-16 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US6494162B1 (en) 1991-05-28 2002-12-17 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US7169657B2 (en) 1992-03-26 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US7781271B2 (en) 1992-03-26 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US5372836A (en) * 1992-03-27 1994-12-13 Tokyo Electron Limited Method of forming polycrystalling silicon film in process of manufacturing LCD
US6440785B1 (en) 1992-06-26 2002-08-27 Semiconductor Energy Laboratory Co., Ltd Method of manufacturing a semiconductor device utilizing a laser annealing process
US5968383A (en) * 1992-06-26 1999-10-19 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus having beam expander
US7985635B2 (en) 1992-06-26 2011-07-26 Semiconductor Energy Laboratory Co., Ltd. Laser process
US7179726B2 (en) 1992-11-06 2007-02-20 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
US5529630A (en) * 1992-11-16 1996-06-25 Tokyo Electron Limited Apparatus for manufacturing a liquid crystal display substrate, and apparatus for evaluating semiconductor crystals
US5413958A (en) * 1992-11-16 1995-05-09 Tokyo Electron Limited Method for manufacturing a liquid crystal display substrate
US7097712B1 (en) * 1992-12-04 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Apparatus for processing a semiconductor
US6159777A (en) * 1993-02-04 2000-12-12 Semiconductor Energy Laboratory Co., Ltd. Method of forming a TFT semiconductor device
US6329229B1 (en) 1993-11-05 2001-12-11 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device
US6897100B2 (en) * 1993-11-05 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
US5591668A (en) * 1994-03-14 1997-01-07 Matsushita Electric Industrial Co., Ltd. Laser annealing method for a semiconductor thin film
US5773309A (en) * 1994-10-14 1998-06-30 The Regents Of The University Of California Method for producing silicon thin-film transistors with enhanced forward current drive
US7939435B2 (en) 1995-02-02 2011-05-10 Semiconductor Energy Laboratory Co., Ltd. Laser annealing method
US7208358B2 (en) 1995-02-02 2007-04-24 Semiconductor Energy Laboratory Co., Ltd. Laser annealing method
US6947452B2 (en) 1995-02-02 2005-09-20 Semiconductor Energy Laboratory Co., Ltd. Laser annealing method
US6596613B1 (en) 1995-02-02 2003-07-22 Semiconductor Energy Laboratory Co., Ltd. Laser annealing method
US7517774B2 (en) 1995-02-02 2009-04-14 Semiconductor Energy Laboratory Co., Ltd. Laser annealing method
US6919533B2 (en) 1995-05-31 2005-07-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a display device including irradiating overlapping regions
US6982396B2 (en) 1995-05-31 2006-01-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a display device including irradiating overlapping regions
US8835801B2 (en) 1995-05-31 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Laser processing method
US7223938B2 (en) 1995-05-31 2007-05-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a display device including irradiating overlapping regions
JP2007251196A (en) * 1995-07-25 2007-09-27 Semiconductor Energy Lab Co Ltd Manufacturing method of laser beam irradiation device and semiconductor device
US7303980B2 (en) 1995-07-25 2007-12-04 Semiconductor Energy Laboratory Co., Ltd. Laser annealing method and apparatus
US7452788B2 (en) 1995-07-25 2008-11-18 Semiconductor Energy Laboratory Co., Ltd. Method of laser annealing using linear beam having quasi-trapezoidal energy profile for increased depth of focus
US6524977B1 (en) * 1995-07-25 2003-02-25 Semiconductor Energy Laboratory Co., Ltd. Method of laser annealing using linear beam having quasi-trapezoidal energy profile for increased depth of focus
US6593216B1 (en) 1995-08-07 2003-07-15 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US7439114B2 (en) 1996-08-19 2008-10-21 Sanyo Electric Co., Ltd. Laser anneal method of a semiconductor layer
US7061017B2 (en) 1996-08-19 2006-06-13 Sanyo Electric Co., Ltd. Laser anneal method of a semiconductor layer
US6194023B1 (en) 1997-09-25 2001-02-27 Kabushiki Kaisha Toshiba Method of manufacturing a poly-crystalline silicon film
KR100293524B1 (en) * 1999-05-28 2001-06-15 구본준 Crystallization Apparatus using Non-vacuum Process and Method thereof
US6921685B2 (en) 2001-04-10 2005-07-26 Nec Lcd Technologies, Ltd. Method of fabricating thin film transistor
US7151046B2 (en) 2003-10-24 2006-12-19 Hitachi Displays, Ltd. Semiconductor thin film decomposing method, decomposed semiconductor thin film, decomposed semiconductor thin film evaluation method, thin film transistor made of decomposed semiconductor thin film, and image display device having circuit constituted of thin film transistors
JP2007032044A (en) * 2005-07-26 2007-02-08 Sumitomo Metal Ind Ltd Support structure for foundation pile and steel pipe pile

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