JPS5785262A - Manufacture of metal oxide semiconductor type semiconductor device - Google Patents
Manufacture of metal oxide semiconductor type semiconductor deviceInfo
- Publication number
- JPS5785262A JPS5785262A JP55161675A JP16167580A JPS5785262A JP S5785262 A JPS5785262 A JP S5785262A JP 55161675 A JP55161675 A JP 55161675A JP 16167580 A JP16167580 A JP 16167580A JP S5785262 A JPS5785262 A JP S5785262A
- Authority
- JP
- Japan
- Prior art keywords
- region
- channel region
- manufacture
- energy beams
- irradiated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910044991 metal oxide Inorganic materials 0.000 title 1
- 150000004706 metal oxides Chemical class 0.000 title 1
- 239000013078 crystal Substances 0.000 abstract 2
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To improve the problems of the delay of working speed, the increase of leakage currents, etc. resulting from a fact that semiconductor layers for forming conventional elements cannot help becoming to non-single crystals by shaping a non-single crystal semiconductor layer and irradiating energy beams to at least a channel region prearranged section. CONSTITUTION:Laser beams using Nd-VAG as a ight source are irradiated to a channel region, a source region 8 and a drain region 9 of an element region, and polycrystal silicon is annealed. When the energy beams are irradiated not only the channel region but also the source region 8 and the drain region 9, phosphorus ion-injected in an electrode forming process may be activated through the irradiation of the energy beams. Accordingly, the manufacture has various excellent advantages owing to structure of which a gate electrode is buried and shaped under the channel region, and the problems of the delay of working speed, etc. resulting from the fact that an element must be formed to the polysilicon layer can also be improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55161675A JPS5785262A (en) | 1980-11-17 | 1980-11-17 | Manufacture of metal oxide semiconductor type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55161675A JPS5785262A (en) | 1980-11-17 | 1980-11-17 | Manufacture of metal oxide semiconductor type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5785262A true JPS5785262A (en) | 1982-05-27 |
Family
ID=15739696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55161675A Pending JPS5785262A (en) | 1980-11-17 | 1980-11-17 | Manufacture of metal oxide semiconductor type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5785262A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5974673A (en) * | 1982-10-21 | 1984-04-27 | Agency Of Ind Science & Technol | Manufacture of semiconductor device |
| JPS59195871A (en) * | 1983-04-20 | 1984-11-07 | Mitsubishi Electric Corp | Manufacture of metal oxide semiconductor field-effect transistor |
| JPH07131033A (en) * | 1994-03-31 | 1995-05-19 | Semiconductor Energy Lab Co Ltd | Insulated gate fet transistor |
| JPH07161999A (en) * | 1993-10-06 | 1995-06-23 | Micron Semiconductor Inc | Method for forming thin film field effect transistor |
| US5930608A (en) * | 1992-02-21 | 1999-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a thin film transistor in which the channel region of the transistor consists of two portions of differing crystallinity |
| US6274885B1 (en) | 1994-12-16 | 2001-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display device with TFTs of different refractive index |
| US6323069B1 (en) | 1992-03-25 | 2001-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a thin film transistor using light irradiation to form impurity regions |
| US6331717B1 (en) | 1993-08-12 | 2001-12-18 | Semiconductor Energy Laboratory Co. Ltd. | Insulated gate semiconductor device and process for fabricating the same |
| US6458200B1 (en) * | 1990-06-01 | 2002-10-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating thin-film transistor |
| US6500703B1 (en) | 1993-08-12 | 2002-12-31 | Semicondcutor Energy Laboratory Co., Ltd. | Insulated gate semiconductor device and process for fabricating the same |
| US6504170B1 (en) | 1999-03-01 | 2003-01-07 | Micron Technology, Inc. | Field effect transistors, field emission apparatuses, and a thin film transistor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55132072A (en) * | 1979-03-31 | 1980-10-14 | Toshiba Corp | Mos semiconductor device |
-
1980
- 1980-11-17 JP JP55161675A patent/JPS5785262A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55132072A (en) * | 1979-03-31 | 1980-10-14 | Toshiba Corp | Mos semiconductor device |
Cited By (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0212030B2 (en) * | 1982-10-21 | 1990-03-16 | Kogyo Gijutsuin | |
| JPS5974673A (en) * | 1982-10-21 | 1984-04-27 | Agency Of Ind Science & Technol | Manufacture of semiconductor device |
| JPS59195871A (en) * | 1983-04-20 | 1984-11-07 | Mitsubishi Electric Corp | Manufacture of metal oxide semiconductor field-effect transistor |
| US7018874B2 (en) | 1990-06-01 | 2006-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating thin-film transistor |
| US6740547B2 (en) | 1990-06-01 | 2004-05-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating thin-film transistor |
| US6458200B1 (en) * | 1990-06-01 | 2002-10-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating thin-film transistor |
| US6352883B1 (en) | 1991-02-22 | 2002-03-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US6717180B2 (en) | 1991-02-22 | 2004-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US5930608A (en) * | 1992-02-21 | 1999-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a thin film transistor in which the channel region of the transistor consists of two portions of differing crystallinity |
| US6569724B2 (en) | 1992-03-25 | 2003-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect transistor and method for forming the same |
| US6887746B2 (en) | 1992-03-25 | 2005-05-03 | Semiconductor Energy Lab | Insulated gate field effect transistor and method for forming the same |
| US6323069B1 (en) | 1992-03-25 | 2001-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a thin film transistor using light irradiation to form impurity regions |
| US6376287B1 (en) | 1993-05-12 | 2002-04-23 | Micron Technology, Inc. | Method of making field effect |
| US6437366B1 (en) | 1993-08-12 | 2002-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate semiconductor device and process for fabricating the same |
| US6500703B1 (en) | 1993-08-12 | 2002-12-31 | Semicondcutor Energy Laboratory Co., Ltd. | Insulated gate semiconductor device and process for fabricating the same |
| US6331717B1 (en) | 1993-08-12 | 2001-12-18 | Semiconductor Energy Laboratory Co. Ltd. | Insulated gate semiconductor device and process for fabricating the same |
| US7381598B2 (en) | 1993-08-12 | 2008-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate semiconductor device and process for fabricating the same |
| US6235562B1 (en) | 1993-10-06 | 2001-05-22 | Micron Technology, Inc. | Method of making field effect transistors |
| US5923965A (en) * | 1993-10-06 | 1999-07-13 | Micron Technology, Inc. | Thin film transistors and method of making |
| US5807769A (en) * | 1993-10-06 | 1998-09-15 | Micron Technology, Inc. | Methods of making thin film transistors |
| JPH07161999A (en) * | 1993-10-06 | 1995-06-23 | Micron Semiconductor Inc | Method for forming thin film field effect transistor |
| JPH07131033A (en) * | 1994-03-31 | 1995-05-19 | Semiconductor Energy Lab Co Ltd | Insulated gate fet transistor |
| US6274885B1 (en) | 1994-12-16 | 2001-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display device with TFTs of different refractive index |
| KR100393949B1 (en) * | 1994-12-16 | 2003-08-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and active matrix display device |
| US6504170B1 (en) | 1999-03-01 | 2003-01-07 | Micron Technology, Inc. | Field effect transistors, field emission apparatuses, and a thin film transistor |
| US7329552B2 (en) | 1999-03-01 | 2008-02-12 | Micron Technology, Inc. | Field effect transistor fabrication methods, field emission device fabrication methods, and field emission device operational methods |
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