JPS57180173A - Mis transistor and manufacture thereof - Google Patents
Mis transistor and manufacture thereofInfo
- Publication number
- JPS57180173A JPS57180173A JP56065539A JP6553981A JPS57180173A JP S57180173 A JPS57180173 A JP S57180173A JP 56065539 A JP56065539 A JP 56065539A JP 6553981 A JP6553981 A JP 6553981A JP S57180173 A JPS57180173 A JP S57180173A
- Authority
- JP
- Japan
- Prior art keywords
- poly
- ion
- laser
- gate
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Abstract
PURPOSE:To improve the performance of MOSFET by a method wherein the poly Si gate, the source and the drain are separately annealed using laser under the respective optimum conditions. CONSTITUTION:The field oxide film 2', the gate oxide film 2'' and the P<+> channel cut P'' are provided on the P type Si substrate and the surface is covered with the poly Si 3' and implanted with the B<+> ion to control the threshold level. Next after annealing the surface with the rectangular laser beam L, the poly Si gate electrode 3 is formed by means of patterning while the exposed substrate is covered with the SiO2 2. Then the surface is implanted with the P<+> ion and further radiated by the laser pulse to activate the P<+> ion in the n<+> source, the drain and the poly Si gate. The characteristics of the gate electrode 3 are subject to no change after the two times radiation, because each laser annealing is selectively performed meeting the optimum requirements in terms of respective wavelength, output, waveform and the like. The beams of ion, electron or the like in addn. to laser may be effective.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56065539A JPS57180173A (en) | 1981-04-30 | 1981-04-30 | Mis transistor and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56065539A JPS57180173A (en) | 1981-04-30 | 1981-04-30 | Mis transistor and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57180173A true JPS57180173A (en) | 1982-11-06 |
Family
ID=13289915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56065539A Pending JPS57180173A (en) | 1981-04-30 | 1981-04-30 | Mis transistor and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57180173A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6274885B1 (en) | 1994-12-16 | 2001-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display device with TFTs of different refractive index |
| US6808974B2 (en) | 2001-05-15 | 2004-10-26 | International Business Machines Corporation | CMOS structure with maximized polysilicon gate activation and a method for selectively maximizing doping activation in gate, extension, and source/drain regions |
-
1981
- 1981-04-30 JP JP56065539A patent/JPS57180173A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6274885B1 (en) | 1994-12-16 | 2001-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display device with TFTs of different refractive index |
| KR100393949B1 (en) * | 1994-12-16 | 2003-08-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and active matrix display device |
| US6808974B2 (en) | 2001-05-15 | 2004-10-26 | International Business Machines Corporation | CMOS structure with maximized polysilicon gate activation and a method for selectively maximizing doping activation in gate, extension, and source/drain regions |
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