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JPS6459963A - Manufacture of field-effect transistor - Google Patents

Manufacture of field-effect transistor

Info

Publication number
JPS6459963A
JPS6459963A JP21822287A JP21822287A JPS6459963A JP S6459963 A JPS6459963 A JP S6459963A JP 21822287 A JP21822287 A JP 21822287A JP 21822287 A JP21822287 A JP 21822287A JP S6459963 A JPS6459963 A JP S6459963A
Authority
JP
Japan
Prior art keywords
film
aperture
operation layer
etched
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21822287A
Other languages
Japanese (ja)
Inventor
Hirobumi Mizuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP21822287A priority Critical patent/JPS6459963A/en
Publication of JPS6459963A publication Critical patent/JPS6459963A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To form a gate electrode easily on the operation layer of a field-effect transistor by a method wherein insulating films are selectively etched to form an aperture reaching the operation layer and the side of a second insulating film in the aperture is etched and a metal film is applied over the whole surface to form the gate electrode on the operation layer in the aperture. CONSTITUTION:The side of an SiO2 film 14 in an aperture 15 is etched with fluoric acid etchant by using a photoresist film 6 as a mask. As Si3N4 films 13A and 13B are hardly etched at that time, a wide aperture 15A is formed only at the part where the SiO2 film exists. After that, the photoresist film 16 is removed. Then, Al film 17 is applied to the whole surface from the direction vertical to the substrate by a vacuum evaporation method. At that time, a gate electrode 17A composed of the Al film is formed on the surface of an operation layer 12 in the aperture 15.
JP21822287A 1987-08-31 1987-08-31 Manufacture of field-effect transistor Pending JPS6459963A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21822287A JPS6459963A (en) 1987-08-31 1987-08-31 Manufacture of field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21822287A JPS6459963A (en) 1987-08-31 1987-08-31 Manufacture of field-effect transistor

Publications (1)

Publication Number Publication Date
JPS6459963A true JPS6459963A (en) 1989-03-07

Family

ID=16716527

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21822287A Pending JPS6459963A (en) 1987-08-31 1987-08-31 Manufacture of field-effect transistor

Country Status (1)

Country Link
JP (1) JPS6459963A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5172367A (en) * 1990-05-29 1992-12-15 Alps Electric Co., Ltd. Optical pickup guide rail positioning mechanism

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100482A (en) * 1980-01-14 1981-08-12 Matsushita Electric Ind Co Ltd Manufacture of fet

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100482A (en) * 1980-01-14 1981-08-12 Matsushita Electric Ind Co Ltd Manufacture of fet

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5172367A (en) * 1990-05-29 1992-12-15 Alps Electric Co., Ltd. Optical pickup guide rail positioning mechanism

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