JPS6459327A - Active device - Google Patents
Active deviceInfo
- Publication number
- JPS6459327A JPS6459327A JP62217667A JP21766787A JPS6459327A JP S6459327 A JPS6459327 A JP S6459327A JP 62217667 A JP62217667 A JP 62217667A JP 21766787 A JP21766787 A JP 21766787A JP S6459327 A JPS6459327 A JP S6459327A
- Authority
- JP
- Japan
- Prior art keywords
- material layer
- ferroelectric material
- electrodes
- electrode
- inverted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Crystal (AREA)
Abstract
PURPOSE:To prevent crosstalk and to obtain a sharp image having a high contrast by providing a ferroelectric material layer formed between a 1st and 2nd electrodes and specifying the distance between the 1st electrode and the 2nd electrode to >=2 kinds. CONSTITUTION:The 2nd electrode 15 is provided on a substrate 12; the ferroelectric material layer 14 is formed on the 2nd electrode 15 and the 1st electrode 13 is provided on the ferroelectric material layer 14. The film thickness dF of the ferroelectric material layer 14 is shorter than the parallel spacings (x)-(z) between the 1st and 2nd electrodes 13, 15 and the insulating substrate 12. Setting of voltage in such a manner that the polarization is inverted in the direction dF of the short distance between the 1st and 2nd electrodes 13 and 15 and is not inverted in the directions (x)-(z) is, therefore possible at the time of inverting the spontaneous polarization of the ferroelectric material layer 14 held between the two electrodes 13 and 15 by impressing the voltage between the 1st and 2nd electrodes 13 and 15. Only the beta region acts as the active layer of the active device if the dF, (x)-(z) voltages are set in such a manner. Since the spontaneous polarization of the ferroelectric material layer in the (x)-(z) directions is not inverted, the generation of the crosstalk is prevented and the high-grade display is obtd.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62217667A JP2715415B2 (en) | 1987-08-31 | 1987-08-31 | Active device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62217667A JP2715415B2 (en) | 1987-08-31 | 1987-08-31 | Active device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6459327A true JPS6459327A (en) | 1989-03-07 |
| JP2715415B2 JP2715415B2 (en) | 1998-02-18 |
Family
ID=16707831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62217667A Expired - Lifetime JP2715415B2 (en) | 1987-08-31 | 1987-08-31 | Active device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2715415B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6181403B1 (en) | 1992-06-30 | 2001-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
| US6693696B1 (en) | 1992-06-30 | 2004-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54155795A (en) * | 1978-05-30 | 1979-12-08 | Seiko Instr & Electronics Ltd | Electro-optical display unit |
| JPS62153890A (en) * | 1985-12-27 | 1987-07-08 | コニカ株式会社 | Element for active matrix |
-
1987
- 1987-08-31 JP JP62217667A patent/JP2715415B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54155795A (en) * | 1978-05-30 | 1979-12-08 | Seiko Instr & Electronics Ltd | Electro-optical display unit |
| JPS62153890A (en) * | 1985-12-27 | 1987-07-08 | コニカ株式会社 | Element for active matrix |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6181403B1 (en) | 1992-06-30 | 2001-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
| US6693696B1 (en) | 1992-06-30 | 2004-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
| US7567320B2 (en) | 1992-06-30 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device with liquid crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2715415B2 (en) | 1998-02-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |