JPS6453459A - Mos transistor - Google Patents
Mos transistorInfo
- Publication number
- JPS6453459A JPS6453459A JP62209815A JP20981587A JPS6453459A JP S6453459 A JPS6453459 A JP S6453459A JP 62209815 A JP62209815 A JP 62209815A JP 20981587 A JP20981587 A JP 20981587A JP S6453459 A JPS6453459 A JP S6453459A
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- insulating layer
- gate insulating
- gate electrode
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000010453 quartz Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
Landscapes
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To increase the mobility so as to make an LSI or the like operational at higher speed by a method wherein a semiconductor layer interposed between a pair of electrodes is made smaller than the prescribed value in thickness. CONSTITUTION:A second gate electrode 3 formed of polycrystalline silicon is built on a quartz substrate 2, and a gate insulating layer 4 of SiO2 is laminated on the exposed faces of the quartz substrate 2 and the second gate electrode 3. An active layer 5 of polycrystalline silicon semiconductor is formed above the second electrode 3 in the gate insulating layer 4 so as to be a super-thin film equal to or smaller than 100nm in thickness. An N<+>type impurity is ion- implanted into both the sides of the active layer 5 for the formation of a source region 5a and a drain region 5b and a first gate electrode 7 of polycrystalline silicon is formed above the active layer 5 through the intermediary of a gate insulating layer 6 of SiO2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62209815A JP2737780B2 (en) | 1987-08-24 | 1987-08-24 | MOS transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62209815A JP2737780B2 (en) | 1987-08-24 | 1987-08-24 | MOS transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6453459A true JPS6453459A (en) | 1989-03-01 |
| JP2737780B2 JP2737780B2 (en) | 1998-04-08 |
Family
ID=16579071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62209815A Expired - Lifetime JP2737780B2 (en) | 1987-08-24 | 1987-08-24 | MOS transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2737780B2 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05152571A (en) * | 1991-11-27 | 1993-06-18 | Sharp Corp | Resistor |
| US5445454A (en) * | 1991-03-23 | 1995-08-29 | Lohmann Gmbh & Co. Kg | Tubular bag packaging |
| US6102571A (en) * | 1998-09-30 | 2000-08-15 | Hosokawa Yoko Co., Ltd. | Packaging bag |
| US6340830B1 (en) | 1992-06-09 | 2002-01-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US6471401B1 (en) * | 1997-11-13 | 2002-10-29 | Kyodo Shiko Co., Ltd. | Laminated film, method for production thereof, bag and package using the laminated film, and method for separation thereof |
| US6501097B1 (en) | 1994-04-29 | 2002-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
| US6835586B2 (en) | 1998-12-25 | 2004-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2005093625A (en) * | 2003-09-17 | 2005-04-07 | Sony Corp | Thin film semiconductor device manufacturing method, thin film semiconductor device, and liquid crystal display |
| US6914302B2 (en) | 1998-12-18 | 2005-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8158980B2 (en) | 2001-04-19 | 2012-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6740938B2 (en) | 2001-04-16 | 2004-05-25 | Semiconductor Energy Laboratory Co., Ltd. | Transistor provided with first and second gate electrodes with channel region therebetween |
| US6906344B2 (en) | 2001-05-24 | 2005-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with plural channels and corresponding plural overlapping electrodes |
| US6952023B2 (en) | 2001-07-17 | 2005-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US6639246B2 (en) | 2001-07-27 | 2003-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6094773A (en) * | 1983-10-27 | 1985-05-27 | Agency Of Ind Science & Technol | field effect transistor |
| JPS6146067A (en) * | 1984-08-10 | 1986-03-06 | Nec Corp | Double gate thin film transistor and its manufacturing method |
-
1987
- 1987-08-24 JP JP62209815A patent/JP2737780B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6094773A (en) * | 1983-10-27 | 1985-05-27 | Agency Of Ind Science & Technol | field effect transistor |
| JPS6146067A (en) * | 1984-08-10 | 1986-03-06 | Nec Corp | Double gate thin film transistor and its manufacturing method |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5445454A (en) * | 1991-03-23 | 1995-08-29 | Lohmann Gmbh & Co. Kg | Tubular bag packaging |
| JPH05152571A (en) * | 1991-11-27 | 1993-06-18 | Sharp Corp | Resistor |
| US6815772B2 (en) | 1992-06-09 | 2004-11-09 | Semiconductor Energy Laboratory Co., Ltd. | Dual gate MOSFET |
| US6340830B1 (en) | 1992-06-09 | 2002-01-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US6528852B2 (en) | 1992-06-09 | 2003-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Double gated electronic device and method of forming the same |
| US7102164B2 (en) | 1994-04-29 | 2006-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a conductive layer with a light shielding part |
| US6501097B1 (en) | 1994-04-29 | 2002-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
| US6800873B2 (en) | 1994-04-29 | 2004-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| US6984067B2 (en) | 1995-10-09 | 2006-01-10 | Kyodo Shiko Co., Ltd. | Laminated film, method for production thereof, bag and package using the laminated film, and method for separation thereof |
| US7364359B2 (en) | 1995-10-09 | 2008-04-29 | Kyodo Shiko Co., Ltd. | Laminated film, method for production thereof, bag and package using the laminated film, and method for separation thereof |
| US6471401B1 (en) * | 1997-11-13 | 2002-10-29 | Kyodo Shiko Co., Ltd. | Laminated film, method for production thereof, bag and package using the laminated film, and method for separation thereof |
| US6102571A (en) * | 1998-09-30 | 2000-08-15 | Hosokawa Yoko Co., Ltd. | Packaging bag |
| US6914302B2 (en) | 1998-12-18 | 2005-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US6835586B2 (en) | 1998-12-25 | 2004-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8643015B2 (en) | 1998-12-28 | 2014-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor |
| US8158980B2 (en) | 2001-04-19 | 2012-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor |
| JP2005093625A (en) * | 2003-09-17 | 2005-04-07 | Sony Corp | Thin film semiconductor device manufacturing method, thin film semiconductor device, and liquid crystal display |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2737780B2 (en) | 1998-04-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080116 Year of fee payment: 10 |