JPS6437870A - Solid-state image sensing device and manufacture thereof - Google Patents
Solid-state image sensing device and manufacture thereofInfo
- Publication number
- JPS6437870A JPS6437870A JP62194656A JP19465687A JPS6437870A JP S6437870 A JPS6437870 A JP S6437870A JP 62194656 A JP62194656 A JP 62194656A JP 19465687 A JP19465687 A JP 19465687A JP S6437870 A JPS6437870 A JP S6437870A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- glass substrate
- sensing device
- image sensing
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000010410 layer Substances 0.000 abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 239000011521 glass Substances 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To form a high performance FET, a scanning circuit, etc., onto a low cost glass substrate having a low distortion spot through a low temperature process, and to manufacture an image sensing device easily by forming an silicon layer onto the glass substrate for the solid-state image sensing device, changing silicon into a polycrystal through heat treatment and shaping a gate insulating film. CONSTITUTION:An silicon layer 102 is formed onto a glass substrate 101 through a specified method, the silicon layer 102 is thermally treated at approximately 500-700 deg.C and amorphous silicon or microcrystalline silicon is turned into polycrystalline silicon, a polycrystalline silicon layer 102' is formed, and a pattern is formed. A gate electrode 103 is formed through a predetermined method at a low temperature of 650 deg.C or less, a gate electrode 104 is formed, and source-drain regions 105 are shaped through ion implantation, using the electrode 104 as a mask. An inter-layer insulating film 106, a lower transparent electrode 107, a photoconductive layer 108, etc., are formed through a prescribed method in succession. A material having a distortion point of 700 deg.C or less is employed as the glass substrate 101.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62194656A JPS6437870A (en) | 1987-08-04 | 1987-08-04 | Solid-state image sensing device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62194656A JPS6437870A (en) | 1987-08-04 | 1987-08-04 | Solid-state image sensing device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6437870A true JPS6437870A (en) | 1989-02-08 |
Family
ID=16328135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62194656A Pending JPS6437870A (en) | 1987-08-04 | 1987-08-04 | Solid-state image sensing device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6437870A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5255279A (en) * | 1990-05-09 | 1993-10-19 | Sharp Kabushiki Kaisha | Semiconductor laser device, and a method for producing a compound semiconductor device including the semiconductor laser device |
| EP0589713A2 (en) * | 1992-09-25 | 1994-03-30 | Sharp Kabushiki Kaisha | A thin film semiconductor device and a method for producing the same |
-
1987
- 1987-08-04 JP JP62194656A patent/JPS6437870A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5255279A (en) * | 1990-05-09 | 1993-10-19 | Sharp Kabushiki Kaisha | Semiconductor laser device, and a method for producing a compound semiconductor device including the semiconductor laser device |
| US5360762A (en) * | 1990-05-09 | 1994-11-01 | Sharp Kabushiki Kaisha | Semiconductor laser device, and a method for producing a compound semiconductor device including the semiconductor laser device |
| EP0589713A2 (en) * | 1992-09-25 | 1994-03-30 | Sharp Kabushiki Kaisha | A thin film semiconductor device and a method for producing the same |
| EP0589713A3 (en) * | 1992-09-25 | 1994-09-21 | Sharp Kk | A thin film semiconductor device and a method for producing the same |
| US5707746A (en) * | 1992-09-25 | 1998-01-13 | Sharp Kabushiki Kaisha | Thin film transistor device with advanced characteristics by improved matching between a glass substrate and a silicon nitride layer |
| US6013310A (en) * | 1992-09-25 | 2000-01-11 | Sharp Kabushiki Kaisha | Method for producing a thin film semiconductor device |
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