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JPS5789254A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5789254A
JPS5789254A JP55165607A JP16560780A JPS5789254A JP S5789254 A JPS5789254 A JP S5789254A JP 55165607 A JP55165607 A JP 55165607A JP 16560780 A JP16560780 A JP 16560780A JP S5789254 A JPS5789254 A JP S5789254A
Authority
JP
Japan
Prior art keywords
metal
crystal
oxide film
melting point
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55165607A
Other languages
Japanese (ja)
Other versions
JPS6259468B2 (en
Inventor
Noriaki Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55165607A priority Critical patent/JPS5789254A/en
Publication of JPS5789254A publication Critical patent/JPS5789254A/en
Publication of JPS6259468B2 publication Critical patent/JPS6259468B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To form a high speed memory with a simple process by forming a metal silicide furnishing multi-crystal Si, by heat treatmenting and diffusing injected ion with high melting point metal as a mask. CONSTITUTION:A gate electrode 12 is formed by vaporizing a metal with high melting point such as Mo through a gate oxide film on an Si substrate having a field oxide film. A multi-crystal Si 20 is furnished over the entire surface ion injecting impurity into an intended source-drain region and the source and drain regions 16 and 18 are formed by heat treatment in 1,000 deg.C N2 atmosphere for 30min and by diffusing injected ion. The gate electrode is converted to Mo silicide. This is a simple process to form a memory elements with high density which makes a high speed access possible.
JP55165607A 1980-11-25 1980-11-25 Manufacture of semiconductor device Granted JPS5789254A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55165607A JPS5789254A (en) 1980-11-25 1980-11-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55165607A JPS5789254A (en) 1980-11-25 1980-11-25 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5789254A true JPS5789254A (en) 1982-06-03
JPS6259468B2 JPS6259468B2 (en) 1987-12-11

Family

ID=15815567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55165607A Granted JPS5789254A (en) 1980-11-25 1980-11-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5789254A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935475A (en) * 1982-08-23 1984-02-27 Toshiba Corp Manufacture of semiconductor device
JPS62112323A (en) * 1985-09-11 1987-05-23 テキサス　インスツルメンツ　インコ−ポレイテツド Formation of contact on semiconductor surface

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0682967U (en) * 1993-05-13 1994-11-29 株式会社ファンケル mattress

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935475A (en) * 1982-08-23 1984-02-27 Toshiba Corp Manufacture of semiconductor device
JPS62112323A (en) * 1985-09-11 1987-05-23 テキサス　インスツルメンツ　インコ−ポレイテツド Formation of contact on semiconductor surface

Also Published As

Publication number Publication date
JPS6259468B2 (en) 1987-12-11

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