JPS6433932A - Etching apparatus - Google Patents
Etching apparatusInfo
- Publication number
- JPS6433932A JPS6433932A JP18930387A JP18930387A JPS6433932A JP S6433932 A JPS6433932 A JP S6433932A JP 18930387 A JP18930387 A JP 18930387A JP 18930387 A JP18930387 A JP 18930387A JP S6433932 A JPS6433932 A JP S6433932A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- substrate
- magnet
- holding
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To reduce the deformation due to heat of a mask, to perform accurate patterning and to prevent the yield of spark discharge, by constituting the mask with a magnetic material such as nickel and iron, inputting a magnetic field generated with a magnet, which is provided at the lower part of a substrate, and performing the holding and non-holding of the mask. CONSTITUTION:A vacuum exhausting system and an ion generating device are provided. A substrate 15 is provided so as to face the projecting port of the ion generating device. Radical such as ions can be projected in this apparatus. A patterned mask 19, through which ions can pass, is provided between the substrate 15 and the ion projecting port. The mask 19 is constituted with a magnetic body such as nickel and iron. A magnetic field, which is generated with a magnet 16 provided at the lower part of the substrate and reaches the mask 19, is inputted from the outside. Thus the holding and non-holding of the mask are performed. For example, said magnet 16 is an electromagnet. The magnetic field is controlled with an electric input device 18. The mask 19 is suspened with springs. When the magnetic field of the magnet 16 is cut, the substrate 15 is conveyed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18930387A JPS6433932A (en) | 1987-07-29 | 1987-07-29 | Etching apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18930387A JPS6433932A (en) | 1987-07-29 | 1987-07-29 | Etching apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6433932A true JPS6433932A (en) | 1989-02-03 |
Family
ID=16239077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18930387A Pending JPS6433932A (en) | 1987-07-29 | 1987-07-29 | Etching apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6433932A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006346372A (en) * | 2005-05-19 | 2006-12-28 | Duskin Co Ltd | Drinking water extraction and production machine |
| WO2008100139A1 (en) * | 2007-02-13 | 2008-08-21 | Fujifilm Manufacturing Europe B.V. | Substrate plasma treatment using magnetic mask device |
| US8323753B2 (en) | 2006-05-30 | 2012-12-04 | Fujifilm Manufacturing Europe B.V. | Method for deposition using pulsed atmospheric pressure glow discharge |
| US8445897B2 (en) | 2008-02-08 | 2013-05-21 | Fujifilm Manufacturing Europe B.V. | Method for manufacturing a multi-layer stack structure with improved WVTR barrier property |
| US8702999B2 (en) | 2008-02-01 | 2014-04-22 | Fujifilm Manufacturing Europe B.V. | Method and apparatus for plasma surface treatment of a moving substrate |
-
1987
- 1987-07-29 JP JP18930387A patent/JPS6433932A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006346372A (en) * | 2005-05-19 | 2006-12-28 | Duskin Co Ltd | Drinking water extraction and production machine |
| US8323753B2 (en) | 2006-05-30 | 2012-12-04 | Fujifilm Manufacturing Europe B.V. | Method for deposition using pulsed atmospheric pressure glow discharge |
| WO2008100139A1 (en) * | 2007-02-13 | 2008-08-21 | Fujifilm Manufacturing Europe B.V. | Substrate plasma treatment using magnetic mask device |
| US8338307B2 (en) | 2007-02-13 | 2012-12-25 | Fujifilm Manufacturing Europe B.V. | Substrate plasma treatment using magnetic mask device |
| US8702999B2 (en) | 2008-02-01 | 2014-04-22 | Fujifilm Manufacturing Europe B.V. | Method and apparatus for plasma surface treatment of a moving substrate |
| EP2235735B1 (en) * | 2008-02-01 | 2015-09-30 | Fujifilm Manufacturing Europe B.V. | Method and apparatus for plasma surface treatment of a moving substrate |
| US8445897B2 (en) | 2008-02-08 | 2013-05-21 | Fujifilm Manufacturing Europe B.V. | Method for manufacturing a multi-layer stack structure with improved WVTR barrier property |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DK0413282T3 (en) | Method and apparatus for providing magnetically coupled flat plasma | |
| AU1423888A (en) | High-frequency ion source | |
| EP0343017A3 (en) | Reactive ion etching apparatus | |
| GB1499847A (en) | Selective removal of material by sputter etching | |
| DE3789163D1 (en) | Device for the surface treatment of workpieces. | |
| JPS6433932A (en) | Etching apparatus | |
| JPS59194407A (en) | Electron cyclotron resonance ion source magnet device | |
| JPS56156662A (en) | Device for ion implantation | |
| JPS57203781A (en) | Plasma working device | |
| JPS5254897A (en) | Plasma ion source for solid materials | |
| ATE80675T1 (en) | METHOD AND DEVICE FOR ETCHING SUBSTRATES WITH A MAGNETIC FIELD ASSISTED LOW PRESSURE DISCHARGE. | |
| JPS5244174A (en) | Plasma treatment device | |
| GB1063199A (en) | A source of positively-charged particles | |
| JPS53114679A (en) | Plasm etching unit | |
| EP0474584A3 (en) | Capacitively coupled radiofrequency plasma source | |
| JPS6481200A (en) | Outside device for beaming ion to cyclotron | |
| JPS56156763A (en) | Finely working method and apparatus by plasma sputtering | |
| JPS6423537A (en) | Plasma processing device | |
| GB888108A (en) | A plasma accelerator and modified picket-fence magnetic field plasma containment device | |
| JPS5867870A (en) | Magnetically attached magnetron-type apparatus for high-speed plasma etching or reactive ion etching | |
| Horiike et al. | Ion Source and Ion Etching Process. | |
| JPS553626A (en) | Apparatus for manufacturing semiconductor device | |
| JPS6442130A (en) | Sputter etching device | |
| JPS56152969A (en) | Ion etching apparatus | |
| GB1106187A (en) | Improvements in the generation of ions |