JPS6423537A - Plasma processing device - Google Patents

Abstract

PURPOSE:To make the energy of ions incident on a substrate uniform over the whole substrate by a method wherein a gas supply means and a gas exhaust means are installed at an airtight plasma generation chamber and an electrode whose one end is connected to a high-frequency power supply is installed to be face to face with a slit plate. CONSTITUTION:When an etching operation is executed, an etching gas is supplied from a gas supply pipe 9; the gas is evacuated through a gas exhaust pipe 10; a definite pressure is established; microwaves are supplied; a plasma is generated by the microwaves between a slit plate 5 and an electrode 7. A wafer 12 to be treated is placed on the electrode 7; a high-frequency voltage from a high-frequency power supply 11 is impressed on the electrode 7. The electrode 7 and the slit plate 5 are arranged in parallel with each other; a high-frequency electric current flows uniformly between the electrode 7 and the slit 5. As a result, an electric field generated between the electrode and the plasma becomes uniform; ions of the etching gas by the energy which is uniform over the whole surface are incident on the wafer 12 after they have been controlled by the high-frequency voltage. An active species of the etching gas reacts with a film to be treated on the wafer 12, and an etching operation proceeds. Because the energy of the incident ions is uniform during this process, the whole surface of the wafer can be etched uniformly.