[go: up one dir, main page]

JPS57210631A - Reactive type ion etching method - Google Patents

Reactive type ion etching method

Info

Publication number
JPS57210631A
JPS57210631A JP9463181A JP9463181A JPS57210631A JP S57210631 A JPS57210631 A JP S57210631A JP 9463181 A JP9463181 A JP 9463181A JP 9463181 A JP9463181 A JP 9463181A JP S57210631 A JPS57210631 A JP S57210631A
Authority
JP
Japan
Prior art keywords
electrode
sample
plasma
etching method
ion etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9463181A
Other languages
Japanese (ja)
Inventor
Tsunetoshi Arikado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9463181A priority Critical patent/JPS57210631A/en
Publication of JPS57210631A publication Critical patent/JPS57210631A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To etch a film to be etched without damaging a foundation by adjusting the potential of an electrode at the side where a sample is placed within a specified range. CONSTITUTION:A reactive gas containing halogen atoms is introduced into an etching chamber into which a pair of parallel-plate electrodes 5, 6 are arranged while high-frequency power is applied between the electrodes 5, 6 to generate discharge plasma, and the sample 7 is etched by the plasma. The potential of the electrode 6 at the side where the sample 7 is placed through such a reactive ion etching method is adjusted within the range of 30-100V when viewed from the plasma. For example, DC voltage applied to the shealth of the surface of the lower electrode 6 is adjusted within sand range by applying the high- frequency power to the upper electrode 5 by using a substrate tuning type etching device and changing the impedance of a matching box 8 connected to the lower electrode 6.
JP9463181A 1981-06-19 1981-06-19 Reactive type ion etching method Pending JPS57210631A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9463181A JPS57210631A (en) 1981-06-19 1981-06-19 Reactive type ion etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9463181A JPS57210631A (en) 1981-06-19 1981-06-19 Reactive type ion etching method

Publications (1)

Publication Number Publication Date
JPS57210631A true JPS57210631A (en) 1982-12-24

Family

ID=14115604

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9463181A Pending JPS57210631A (en) 1981-06-19 1981-06-19 Reactive type ion etching method

Country Status (1)

Country Link
JP (1) JPS57210631A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6163021A (en) * 1984-09-03 1986-04-01 Matsushita Electric Ind Co Ltd Electric discharge machining equipment
JPS61174633A (en) * 1985-01-29 1986-08-06 Ulvac Corp Vacuum discharge treating device
JPH01183125A (en) * 1988-01-18 1989-07-20 Matsushita Electric Ind Co Ltd Dry etching method
EP0590870A3 (en) * 1992-09-30 1994-07-27 At & T Corp Method of making a buried heterostructure laser
US5423945A (en) * 1992-09-08 1995-06-13 Applied Materials, Inc. Selectivity for etching an oxide over a nitride
JPH08321484A (en) * 1995-05-24 1996-12-03 Nec Corp Method for manufacturing semiconductor device
US6194325B1 (en) * 1992-09-08 2001-02-27 Applied Materials Inc. Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography
US7049244B2 (en) 1992-06-15 2006-05-23 Micron Technology, Inc. Method for enhancing silicon dioxide to silicon nitride selectivity

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368171A (en) * 1976-11-30 1978-06-17 Hitachi Ltd Method and apparatus for plasma treatment
JPS5690978A (en) * 1979-12-22 1981-07-23 Fujitsu Ltd Method and apparatus for plasma etching

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368171A (en) * 1976-11-30 1978-06-17 Hitachi Ltd Method and apparatus for plasma treatment
JPS5690978A (en) * 1979-12-22 1981-07-23 Fujitsu Ltd Method and apparatus for plasma etching

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6163021A (en) * 1984-09-03 1986-04-01 Matsushita Electric Ind Co Ltd Electric discharge machining equipment
JPS61174633A (en) * 1985-01-29 1986-08-06 Ulvac Corp Vacuum discharge treating device
JPH01183125A (en) * 1988-01-18 1989-07-20 Matsushita Electric Ind Co Ltd Dry etching method
US7049244B2 (en) 1992-06-15 2006-05-23 Micron Technology, Inc. Method for enhancing silicon dioxide to silicon nitride selectivity
US5423945A (en) * 1992-09-08 1995-06-13 Applied Materials, Inc. Selectivity for etching an oxide over a nitride
US6194325B1 (en) * 1992-09-08 2001-02-27 Applied Materials Inc. Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography
EP0590870A3 (en) * 1992-09-30 1994-07-27 At & T Corp Method of making a buried heterostructure laser
JPH08321484A (en) * 1995-05-24 1996-12-03 Nec Corp Method for manufacturing semiconductor device

Similar Documents

Publication Publication Date Title
KR900007687B1 (en) Method and device for plasma processing
US4316791A (en) Device for chemical dry etching of integrated circuits
JPS627272B2 (en)
TW336326B (en) Etch chamber with 3 electrodes
JPH0527244B2 (en)
EP0831516A3 (en) Device and method for processing a plasma to alter the surface of a substrate using neutrals
JPS5633839A (en) Plasma treatment and device therefor
JPS57210631A (en) Reactive type ion etching method
KR20010052875A (en) Method and apparatus for dechucking a substrate from an electrostatic chuck
JPS597212B2 (en) Plasma etching method
US5330615A (en) Symmetric double water plasma etching system
JPS5760073A (en) Plasma etching method
JPS5647572A (en) Etching method of indium oxide film
JPS54124683A (en) Processing method of silicon wafer
JP3278732B2 (en) Etching apparatus and etching method
JPH088237B2 (en) Plasma processing method
JPS5715424A (en) Dry etching method
JPS56100422A (en) Plasma etching method
JPS57181376A (en) Dry etching device
JPS57143827A (en) Parallel, flat electrode
JPS61166028A (en) Dry etching equipment
JPS6423537A (en) Plasma processing device
JPS60189925A (en) High frequency discharge reactor
JPS577129A (en) Treating method and device for sputtering
JPS57181377A (en) Dry etching device