JPS6431973A - Crystal growing device in chemical vapor of organo metallic compound - Google Patents
Crystal growing device in chemical vapor of organo metallic compoundInfo
- Publication number
- JPS6431973A JPS6431973A JP18700687A JP18700687A JPS6431973A JP S6431973 A JPS6431973 A JP S6431973A JP 18700687 A JP18700687 A JP 18700687A JP 18700687 A JP18700687 A JP 18700687A JP S6431973 A JPS6431973 A JP S6431973A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- metallic compound
- organo metallic
- raw material
- film thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To grow crystal contg. metallic atom with uniform film thickness even in the peripheral edge part of a substrate by providing a recessing part having a same shape as the substrate to the holder thereof, nesting the substrate therein, and introducing a gaseous raw material cont. organo metallic compound into a reaction chamber. CONSTITUTION:A gaseous raw material contg. organo metallic compound is introduced into the reaction chamber 12 of a bell jar 10 made of quartz regulated to the prescribed temp. with a high-frequency coil 16 from a raw material gas feeder 14. Thereby crystal contg. metallic atoms of the organo metallic compound is grown on the surface of a substrate held by a carrying tray 20 made of quartz which is provided on a supporting base 18 made of graphite. In the above-mentioned crystal growing device of organo metallic compound, a spot facing hole 26 having a same shape as the substrate is provided on the carrying tray 20 used as the holder of the substrate and this substrate is nested into the recessing part. The depth (t) of this recessing part 26 is preferably made equal to plate thickness of the substrate. There increase of film thickness in the peripheral edge part of the substrate is solved and uniform film thickness is obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18700687A JPS6431973A (en) | 1987-07-27 | 1987-07-27 | Crystal growing device in chemical vapor of organo metallic compound |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18700687A JPS6431973A (en) | 1987-07-27 | 1987-07-27 | Crystal growing device in chemical vapor of organo metallic compound |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6431973A true JPS6431973A (en) | 1989-02-02 |
Family
ID=16198553
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18700687A Pending JPS6431973A (en) | 1987-07-27 | 1987-07-27 | Crystal growing device in chemical vapor of organo metallic compound |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6431973A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0623489A (en) * | 1992-04-28 | 1994-02-01 | Kawasaki Heavy Ind Ltd | Mold for horizontal continuous casting equipment |
JPH0623488A (en) * | 1992-04-28 | 1994-02-01 | Kawasaki Heavy Ind Ltd | Mold for horizontal continuous casting equipment |
US5636647A (en) * | 1993-03-29 | 1997-06-10 | Johnson & Johnson Vision Products, Inc. | Solution removal nozzle |
-
1987
- 1987-07-27 JP JP18700687A patent/JPS6431973A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0623489A (en) * | 1992-04-28 | 1994-02-01 | Kawasaki Heavy Ind Ltd | Mold for horizontal continuous casting equipment |
JPH0623488A (en) * | 1992-04-28 | 1994-02-01 | Kawasaki Heavy Ind Ltd | Mold for horizontal continuous casting equipment |
US5636647A (en) * | 1993-03-29 | 1997-06-10 | Johnson & Johnson Vision Products, Inc. | Solution removal nozzle |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5114745A (en) | Method of producing a thin carbide layer on a carbon substrate, growing a diamond or diamond-like film on the carbide layer, and removing the carbon substrate | |
SE9502288D0 (en) | A device and a method for epitaxially growing objects by CVD | |
KR970060367A (en) | Epitaxial Growth Method | |
EP0216932A4 (en) | POLYCRYSTALLINE RHOMBOEDRIC BORON NITRIDE AND PROCESS FOR PRODUCING THE SAME. | |
JPH0259493A (en) | Method for growing diamond | |
EP0164928A3 (en) | Vertical hot wall cvd reactor | |
JPS6431973A (en) | Crystal growing device in chemical vapor of organo metallic compound | |
KR980700460A (en) | PROCESS AND DEVICE FOR SUBLIMATION GROWING SILICON CARBIDE MONOCRYSTALS | |
JP2002274994A (en) | Method and apparatus for producing silicon carbide single crystal and silicon carbide single crystal ingot | |
GB1452546A (en) | Growing epitaxial layers | |
JPS6479097A (en) | Compound semiconductor vapor growth device | |
JPS6489318A (en) | Vapor growth susceptor | |
JPH04354119A (en) | Substrate retaining structure of vapor growth equipment | |
JPS6473078A (en) | C.v.d. device | |
JPS6441211A (en) | Semiconductor growth device | |
JPH06298514A (en) | Production of highly pure silicon carbide | |
Matsuda et al. | Rhombohedral Polycrystalline Boron Nitride and Process for Its Production | |
JPS57120335A (en) | Manufacture of semiconductor device | |
JPS55148420A (en) | Manufacturing of carbonized silicon crystal layer | |
JP2002308698A (en) | METHOD FOR PRODUCING SiC SINGLE CRYSTAL | |
SE9500327D0 (en) | Device for epitaxially growing SiC by CVD | |
JPS6425521A (en) | Vapor phase epitaxy method for compound semiconductor | |
JPS6425984A (en) | Formation of deposited film | |
JPS6272115A (en) | Chemical vapor growth device | |
JPS6441212A (en) | Semiconductor crystal growth method |