[go: up one dir, main page]

JPS6431973A - Crystal growing device in chemical vapor of organo metallic compound - Google Patents

Crystal growing device in chemical vapor of organo metallic compound

Info

Publication number
JPS6431973A
JPS6431973A JP18700687A JP18700687A JPS6431973A JP S6431973 A JPS6431973 A JP S6431973A JP 18700687 A JP18700687 A JP 18700687A JP 18700687 A JP18700687 A JP 18700687A JP S6431973 A JPS6431973 A JP S6431973A
Authority
JP
Japan
Prior art keywords
substrate
metallic compound
organo metallic
raw material
film thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18700687A
Other languages
English (en)
Inventor
Toshihiro Kato
Mitsuru Imaizumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daido Steel Co Ltd
Original Assignee
Daido Steel Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daido Steel Co Ltd filed Critical Daido Steel Co Ltd
Priority to JP18700687A priority Critical patent/JPS6431973A/ja
Publication of JPS6431973A publication Critical patent/JPS6431973A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
JP18700687A 1987-07-27 1987-07-27 Crystal growing device in chemical vapor of organo metallic compound Pending JPS6431973A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18700687A JPS6431973A (en) 1987-07-27 1987-07-27 Crystal growing device in chemical vapor of organo metallic compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18700687A JPS6431973A (en) 1987-07-27 1987-07-27 Crystal growing device in chemical vapor of organo metallic compound

Publications (1)

Publication Number Publication Date
JPS6431973A true JPS6431973A (en) 1989-02-02

Family

ID=16198553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18700687A Pending JPS6431973A (en) 1987-07-27 1987-07-27 Crystal growing device in chemical vapor of organo metallic compound

Country Status (1)

Country Link
JP (1) JPS6431973A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0623489A (ja) * 1992-04-28 1994-02-01 Kawasaki Heavy Ind Ltd 水平連続鋳造設備用モールド
JPH0623488A (ja) * 1992-04-28 1994-02-01 Kawasaki Heavy Ind Ltd 水平連続鋳造設備用モールド
US5636647A (en) * 1993-03-29 1997-06-10 Johnson & Johnson Vision Products, Inc. Solution removal nozzle

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0623489A (ja) * 1992-04-28 1994-02-01 Kawasaki Heavy Ind Ltd 水平連続鋳造設備用モールド
JPH0623488A (ja) * 1992-04-28 1994-02-01 Kawasaki Heavy Ind Ltd 水平連続鋳造設備用モールド
US5636647A (en) * 1993-03-29 1997-06-10 Johnson & Johnson Vision Products, Inc. Solution removal nozzle

Similar Documents

Publication Publication Date Title
US5114745A (en) Method of producing a thin carbide layer on a carbon substrate, growing a diamond or diamond-like film on the carbide layer, and removing the carbon substrate
KR970060367A (ko) 에피탁셜 성장방법
JPH11508531A (ja) Cvdによって目的物をエピタキシアル成長させる装置と方法
EP0216932A4 (en) RHOMBOHEDRIC POLYCRYSTALLINE BORNITRIDE AND THEIR PRODUCTION.
RU99101816A (ru) Способ эпитаксиального выращивания карбида кремния и реактор для его осуществления
JPH0259493A (ja) ダイヤモンドの成長法
EP0164928A3 (en) Vertical hot wall cvd reactor
JPS6431973A (en) Crystal growing device in chemical vapor of organo metallic compound
KR980700460A (ko) 실리콘 탄화물 단결정을 승화 성장시키기 위한 방법 및 장치(process and device for sublimation growing silicon carbide monocrystals)
WO2005013343A1 (ja) 気相成長装置及び気相成長方法
WO2007029269A1 (en) Synthesis of large homoepitaxial monocrystalline diamond
JP2002274994A (ja) 炭化珪素単結晶の製造方法及びその装置並びに炭化珪素単結晶インゴット
GB1452546A (en) Growing epitaxial layers
JPS6479097A (en) Compound semiconductor vapor growth device
JPS6489318A (en) Vapor growth susceptor
JPS6473078A (en) C.v.d. device
JPS57128021A (en) Vapor phase growing apparatus for semiconductor
JPS6441211A (en) Semiconductor growth device
JPH06298514A (ja) 高純度炭化ケイ素の製造方法
Matsuda et al. Rhombohedral Polycrystalline Boron Nitride and Process for Its Production
JPS57120335A (en) Manufacture of semiconductor device
JPS55148420A (en) Manufacturing of carbonized silicon crystal layer
JP2002308698A (ja) SiC単結晶の製造方法
SE9500327D0 (sv) Device for epitaxially growing SiC by CVD
JPS5645897A (en) Manufacture of silicon carbide crystal