JPS6425521A - Vapor phase epitaxy method for compound semiconductor - Google Patents

Abstract

PURPOSE:To make it possible to form an excellent epitaxial layer, by completely separating raw materials of organic compound gas of a group II element, hydrogenated gas or organic compound gas of a group VI element or organic compound gas of a group III element, and hydrogenated gas or organic compound gas of a group V element until reaching a semiconductor substrate, and alternately supplying the material on the semiconductor substrate. CONSTITUTION:In a quartz reacting tube 1, a region from an upper flange 6 to a carbon susceptor 2 is divided into two parts with a quartz partitioning plate 17. In one part, DMZ, which is a raw material of a group II element, and carrier gas H2 are introduced. In the other part, H2Se, which is a raw material of a group VI element, and carrier gas H2 are introduced. A supporting table 8 is rotated. A semiconductor substrate 3, which is located at a deviated position from the center, is alternately exposed to the raw material gases in the two parts. The carbon susceptor 2 is heated at high frequency with a high frequency induction coil 9. Thus, the semiconductor substrate 3 is heated to a growing temperature. The DMZ and H2Se are thermally decomposed in a vapor phase by the thermal radiation from the carbon susceptor. The elements are adsorbed at every one atom layer. An Zn atom layer and an Se atom layer are alternately grown for every rotation of the carbon susceptor 2.