JPS6427258A - Semiconductor memory and manufacture thereof - Google Patents
Semiconductor memory and manufacture thereofInfo
- Publication number
- JPS6427258A JPS6427258A JP62085721A JP8572187A JPS6427258A JP S6427258 A JPS6427258 A JP S6427258A JP 62085721 A JP62085721 A JP 62085721A JP 8572187 A JP8572187 A JP 8572187A JP S6427258 A JPS6427258 A JP S6427258A
- Authority
- JP
- Japan
- Prior art keywords
- regions
- insulating film
- film
- shaped
- trench
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000002093 peripheral effect Effects 0.000 abstract 3
- 239000003990 capacitor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
- H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical
Landscapes
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To form a peripheral circular circuit as CMOS constitution by shaping structure in which a transistor for a cell and the peripheral circuit are formed to a semiconductor substrate to which an epitaxial layer is not grown. CONSTITUTION:A first insulating film 23 as a cell isolation region is formed to the bottom of a trench 15, a second insulating film 29 as a capacitor insulating film is shaped onto the sidewall of the lower section of the film 23, and a capacitor is formed by a first conductive film 27, the second insulating film 29 and insular regions 17 in an silicon substrate 11. A third insulating film 47 as a gate insulating film is shaped onto the upper sidewall of the trench 15, and second conductive films 49 are formed into the upper region of the trench 15 on the upper side of the film 47 as word lines. Transistor structure is shaped by source regions as first semiconductor regions 39 formed into specified regions in the insular regions 17, drain regions as second semiconductor regions 35 shaped into regions on the top face sides of the insular regions 17 and the word lines 49 as gate electrodes. Accordingly, a peripheral circuit can be formed as CMOS constitution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62085721A JPS6427258A (en) | 1987-04-09 | 1987-04-09 | Semiconductor memory and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62085721A JPS6427258A (en) | 1987-04-09 | 1987-04-09 | Semiconductor memory and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6427258A true JPS6427258A (en) | 1989-01-30 |
Family
ID=13866705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62085721A Pending JPS6427258A (en) | 1987-04-09 | 1987-04-09 | Semiconductor memory and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6427258A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8072624B2 (en) | 2001-07-31 | 2011-12-06 | Canon Kabushiki Kaisha | Image processing device, method, and program with editing, range setting, and printing screen conditionally displayed when application is started |
-
1987
- 1987-04-09 JP JP62085721A patent/JPS6427258A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8072624B2 (en) | 2001-07-31 | 2011-12-06 | Canon Kabushiki Kaisha | Image processing device, method, and program with editing, range setting, and printing screen conditionally displayed when application is started |
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