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JPS55132062A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS55132062A
JPS55132062A JP3967979A JP3967979A JPS55132062A JP S55132062 A JPS55132062 A JP S55132062A JP 3967979 A JP3967979 A JP 3967979A JP 3967979 A JP3967979 A JP 3967979A JP S55132062 A JPS55132062 A JP S55132062A
Authority
JP
Japan
Prior art keywords
film
layer
mesa
domain
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3967979A
Other languages
Japanese (ja)
Other versions
JPS5827669B2 (en
Inventor
Yoshiki Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP54039679A priority Critical patent/JPS5827669B2/en
Publication of JPS55132062A publication Critical patent/JPS55132062A/en
Publication of JPS5827669B2 publication Critical patent/JPS5827669B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE: To obtain one transistor memory cell extremely small in area by arranging a capacity part on the top of a mesa domain and a transistor part on the area longitudinal to the mesa domain.
CONSTITUTION: An n+-layer 2 is formed on a P-Si substrate 1, an epitaxial layer 3 is provided, an SiO2 film 4 and an Si3N4 film 5 are formed selectively, and the layer 3 is etched. The layer 3 is oxidized with the film 5 as a mask, and thus the surface of the layer 6 is made almost equal to the top of a mesa domain 3a. The film 5 is removed, and a p-layer 7 is formed through ion implantation to have upper and lower layers 8, 9 separately. Next, from etching with a metallized Al 10 as a mask, there left is no Al under the canopy top of SiO2 film 4, and a groove is formed consequently. Next, the film 4 and the Al 10 are removed, a gate oxidized film 11 is formed, and a poly-Si 12 is formed selectively on the surface of the mesa domain. Then, an Al wiring layer 14 is formed through an SiO2 film 13. Now, a device area is sharply decreased, integration is improved, parasitic capacity is decreased, thereby allowing a high speed operation.
COPYRIGHT: (C)1980,JPO&Japio
JP54039679A 1979-04-02 1979-04-02 semiconductor storage device Expired JPS5827669B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54039679A JPS5827669B2 (en) 1979-04-02 1979-04-02 semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54039679A JPS5827669B2 (en) 1979-04-02 1979-04-02 semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS55132062A true JPS55132062A (en) 1980-10-14
JPS5827669B2 JPS5827669B2 (en) 1983-06-10

Family

ID=12559775

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54039679A Expired JPS5827669B2 (en) 1979-04-02 1979-04-02 semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5827669B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5982761A (en) * 1982-11-04 1984-05-12 Hitachi Ltd semiconductor memory
JPS61294854A (en) * 1985-06-22 1986-12-25 Toshiba Corp Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5186980A (en) * 1975-01-29 1976-07-30 Nippon Electric Co

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5186980A (en) * 1975-01-29 1976-07-30 Nippon Electric Co

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5982761A (en) * 1982-11-04 1984-05-12 Hitachi Ltd semiconductor memory
JPH0342514B2 (en) * 1982-11-04 1991-06-27
JPS61294854A (en) * 1985-06-22 1986-12-25 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5827669B2 (en) 1983-06-10

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