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JPS642371A - Field-effect transistor - Google Patents

Field-effect transistor

Info

Publication number
JPS642371A
JPS642371A JP62158700A JP15870087A JPS642371A JP S642371 A JPS642371 A JP S642371A JP 62158700 A JP62158700 A JP 62158700A JP 15870087 A JP15870087 A JP 15870087A JP S642371 A JPS642371 A JP S642371A
Authority
JP
Japan
Prior art keywords
layer
gaas
onto
type gaas
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62158700A
Other languages
Japanese (ja)
Other versions
JPH012371A (en
JPH0671011B2 (en
Inventor
Masahiro Shioda
Koji Tomita
Tatsuya Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP62158700A priority Critical patent/JPH0671011B2/en
Publication of JPH012371A publication Critical patent/JPH012371A/en
Publication of JPS642371A publication Critical patent/JPS642371A/en
Publication of JPH0671011B2 publication Critical patent/JPH0671011B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To increase electron mobility by using an N-type GaAs layer, an N-type GaAs layer and an N-type GaAs layer formed onto an undoped buffer layer as a channel layer. CONSTITUTION:An undoped GaAs buffer layer 2 is shaped onto a semi-insulating GaAs substrate 1. An N-type InxGa1-xAs layer 3 having forbidden band width smaller than GaAs is formed onto the layer 2, thus inhibiting the exudation of carriers to the layer 2. A stress-free N-type GaAs layer 4 is shaped onto the layer 3, and these layers 3 and 4 are employed as a channel layer. A gate electrode 5 is attached onto the surface of the layer 4. Accordingly, electron mobility and drift velocity are increased and the effect of confinement of carriers can be improved, and a Schottky barrier FET having excellent gate characteristics can be acquired.
JP62158700A 1987-06-24 1987-06-24 Field effect transistor Expired - Fee Related JPH0671011B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62158700A JPH0671011B2 (en) 1987-06-24 1987-06-24 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62158700A JPH0671011B2 (en) 1987-06-24 1987-06-24 Field effect transistor

Publications (3)

Publication Number Publication Date
JPH012371A JPH012371A (en) 1989-01-06
JPS642371A true JPS642371A (en) 1989-01-06
JPH0671011B2 JPH0671011B2 (en) 1994-09-07

Family

ID=15677448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62158700A Expired - Fee Related JPH0671011B2 (en) 1987-06-24 1987-06-24 Field effect transistor

Country Status (1)

Country Link
JP (1) JPH0671011B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5206527A (en) * 1990-11-09 1993-04-27 Sumitomo Electric Industries, Ltd. Field effect transistor
US6787821B2 (en) 2000-07-19 2004-09-07 Fujitsu Quantum Devices Limited Compound semiconductor device having a mesfet that raises the maximum mutual conductance and changes the mutual conductance

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5206527A (en) * 1990-11-09 1993-04-27 Sumitomo Electric Industries, Ltd. Field effect transistor
US6787821B2 (en) 2000-07-19 2004-09-07 Fujitsu Quantum Devices Limited Compound semiconductor device having a mesfet that raises the maximum mutual conductance and changes the mutual conductance

Also Published As

Publication number Publication date
JPH0671011B2 (en) 1994-09-07

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees