JPS6482569A - Field-effect transistor and manufacture thereof - Google Patents
Field-effect transistor and manufacture thereofInfo
- Publication number
- JPS6482569A JPS6482569A JP24021687A JP24021687A JPS6482569A JP S6482569 A JPS6482569 A JP S6482569A JP 24021687 A JP24021687 A JP 24021687A JP 24021687 A JP24021687 A JP 24021687A JP S6482569 A JPS6482569 A JP S6482569A
- Authority
- JP
- Japan
- Prior art keywords
- sio2
- sin film
- layer
- region
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To easily obtain ohmic contact in a source region and a drain region, by selectively forming material which has a band gap different from semiconductor layer material and is available for lattice matching, on only a region turning to a channel in a III-V compound semiconductor layer. CONSTITUTION:An N-type GaAs layer 22 is formed on a semiinsulating GaAs substrate 21. Resist is spread on the surface of the GaAs layer 22, and regions except a part turning to a channel are eliminated. By using a left resist film 27 as a mask, ion-implanting method is applied to form high concentration impurity layers 28, 29. By sputtering method and the like, an SiO2 or SiN film 30 is formed on the whole surface. By using the SiO2 or SiN film 30 as a mask, an undoped AlGaAs layer 23 is selectively grown in an aperture part 31. A gate electrode 24, a source electrode 25 and a drain electrode 26 are formed, and the SiO2 or SiN film 30 is eliminated in case of need.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62240216A JP2504782B2 (en) | 1987-09-25 | 1987-09-25 | Method for manufacturing field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62240216A JP2504782B2 (en) | 1987-09-25 | 1987-09-25 | Method for manufacturing field effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6482569A true JPS6482569A (en) | 1989-03-28 |
| JP2504782B2 JP2504782B2 (en) | 1996-06-05 |
Family
ID=17056177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62240216A Expired - Lifetime JP2504782B2 (en) | 1987-09-25 | 1987-09-25 | Method for manufacturing field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2504782B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5599389A (en) * | 1990-02-14 | 1997-02-04 | Kabushiki Kaisha Toshiba | Compound semiconductor and method of manufacturing the same |
| US7091579B2 (en) * | 2002-02-20 | 2006-08-15 | Fuji Electric Co., Ltd. | Power semiconductor rectifier having broad buffer structure and method of manufacturing thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6115375A (en) * | 1984-07-02 | 1986-01-23 | Nec Corp | Hetero junction fet |
| JPS63275185A (en) * | 1987-05-06 | 1988-11-11 | Nec Corp | Field effect transistor |
-
1987
- 1987-09-25 JP JP62240216A patent/JP2504782B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6115375A (en) * | 1984-07-02 | 1986-01-23 | Nec Corp | Hetero junction fet |
| JPS63275185A (en) * | 1987-05-06 | 1988-11-11 | Nec Corp | Field effect transistor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5599389A (en) * | 1990-02-14 | 1997-02-04 | Kabushiki Kaisha Toshiba | Compound semiconductor and method of manufacturing the same |
| US7091579B2 (en) * | 2002-02-20 | 2006-08-15 | Fuji Electric Co., Ltd. | Power semiconductor rectifier having broad buffer structure and method of manufacturing thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2504782B2 (en) | 1996-06-05 |
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