JPS6423575A - Thin film transistor - Google Patents
Thin film transistorInfo
- Publication number
- JPS6423575A JPS6423575A JP62179687A JP17968787A JPS6423575A JP S6423575 A JPS6423575 A JP S6423575A JP 62179687 A JP62179687 A JP 62179687A JP 17968787 A JP17968787 A JP 17968787A JP S6423575 A JPS6423575 A JP S6423575A
- Authority
- JP
- Japan
- Prior art keywords
- film
- piled
- gate electrode
- silicon nitride
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
Landscapes
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To obtain high efficiency when polycrystalline silicon is hydrogenated, by using a single substance of specific metals or an alloy material of them to form a gate electrode in a thin film transistor which forms a MISFET. CONSTITUTION:A gate electrode 5 in in FET is formed of a single substance of one species out of M0, W, Ta, Ti, Pt, Pd, and Cu, or it is formed of an alloy material of them. Namely an active layer part 2 of a polycrystalline silicon thin film is formed on a substrate 1, and a silicon oxide film 3 is piled on the part 2, and a silicon nitride film 4 is piled on the film 3 to form a gate insulation film. In succession, for example, single-substance molybdenum is piled on the film 4, and next it is patterned to form a gate electrode 5, and B ions are implanted to form source and drain parts. Annealing is performed to activate the implanted impurities. A silicon nitride film 7 is piled and then contact holes 8 and 9 are opened there. After the piling of AlSi, source and drain electrodes 10, 11 are formed. Finally, annealing is performed to make hydrogen in the silicon nitride film diffused in the active layer. Accordingly this gate electrode can be formed high in hydrogen transmissivity, and so hydro genation efficiency can be upgraded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62179687A JPS6423575A (en) | 1987-07-17 | 1987-07-17 | Thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62179687A JPS6423575A (en) | 1987-07-17 | 1987-07-17 | Thin film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6423575A true JPS6423575A (en) | 1989-01-26 |
Family
ID=16070113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62179687A Pending JPS6423575A (en) | 1987-07-17 | 1987-07-17 | Thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6423575A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6399960B1 (en) | 1998-07-16 | 2002-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with semiconductor circuit comprising semiconductor units, and method for fabricating it |
| US6608357B1 (en) | 1998-07-16 | 2003-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device equipped with semiconductor circuits composed of semiconductor elements and process for production thereof |
| US6849872B1 (en) | 1991-08-26 | 2005-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| US7019385B1 (en) | 1996-04-12 | 2006-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating same |
| JP2009027200A (en) * | 1992-04-06 | 2009-02-05 | Semiconductor Energy Lab Co Ltd | Insulated gate-type semiconductor device and method of manufacturing the same |
| US7569408B1 (en) | 1991-03-06 | 2009-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| JPWO2015052991A1 (en) * | 2013-10-09 | 2017-03-09 | シャープ株式会社 | Semiconductor device and manufacturing method thereof |
-
1987
- 1987-07-17 JP JP62179687A patent/JPS6423575A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7569408B1 (en) | 1991-03-06 | 2009-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US6849872B1 (en) | 1991-08-26 | 2005-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| JP2009027200A (en) * | 1992-04-06 | 2009-02-05 | Semiconductor Energy Lab Co Ltd | Insulated gate-type semiconductor device and method of manufacturing the same |
| US7019385B1 (en) | 1996-04-12 | 2006-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating same |
| US7838968B2 (en) | 1996-04-12 | 2010-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating same |
| US6399960B1 (en) | 1998-07-16 | 2002-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with semiconductor circuit comprising semiconductor units, and method for fabricating it |
| US6586766B2 (en) | 1998-07-16 | 2003-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with semiconductor circuit comprising semiconductor units, and method of fabricating it |
| US6608357B1 (en) | 1998-07-16 | 2003-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device equipped with semiconductor circuits composed of semiconductor elements and process for production thereof |
| US6822293B2 (en) | 1998-07-16 | 2004-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device equipped with semiconductor circuits composed of semiconductor elements and process for production thereof |
| US7078768B2 (en) | 1998-07-16 | 2006-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device equipped with semiconductor circuits composed of semiconductor elements and process for production thereof |
| JPWO2015052991A1 (en) * | 2013-10-09 | 2017-03-09 | シャープ株式会社 | Semiconductor device and manufacturing method thereof |
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