JPS6419759A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS6419759A JPS6419759A JP17633687A JP17633687A JPS6419759A JP S6419759 A JPS6419759 A JP S6419759A JP 17633687 A JP17633687 A JP 17633687A JP 17633687 A JP17633687 A JP 17633687A JP S6419759 A JPS6419759 A JP S6419759A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- layers
- resistance
- insulating
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To improve the integration degree of the title circuit by a method wherein a first resistance layer formed on a semiconductor substrate and a second resistance layer formed on the upper region of the first resistance layer interposing an insulating layer between the first and second resistance layers are connected in series or in parallel through metal wiring layers. CONSTITUTION:An n-type diffused layer 2 is provided on a p-type semiconductor substrate 1, a first resistance layer 3 consisting of a P-type diffused region is formed on the upper part of the layer 2, first insulating layers 4a, 4b and 4c are provided on the upper part of the layer 3, a second resistance layer 5 is formed on the upper part of this insulating layer 4b, second insulating layers 6a, 6b and 6c are formed on the surface of the layer 5, both ends of the layer 3 and both ends of the layer 5 are respectively connected to each other through metal wiring layers 7a and 7b and the layers 3 and 5 are connected in parallel between the layers 7a and 7b. Moreover, the layers 3 and 5 can be connected in series between metal wiring layers 7c and 7d. By connecting three-dimensionally in such a way, the integration degree of a semiconductor integrated circuit can be increased.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17633687A JPS6419759A (en) | 1987-07-14 | 1987-07-14 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17633687A JPS6419759A (en) | 1987-07-14 | 1987-07-14 | Semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6419759A true JPS6419759A (en) | 1989-01-23 |
Family
ID=16011803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17633687A Pending JPS6419759A (en) | 1987-07-14 | 1987-07-14 | Semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6419759A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5989785A (en) * | 1994-12-22 | 1999-11-23 | Nippondenso Co., Ltd. | Process for fabricating an electroluminescent device |
| EP1045445A2 (en) * | 1999-04-16 | 2000-10-18 | STMicroelectronics GmbH | Substantially voltage independent electrical resistance formed in an integrated circuit |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60128651A (en) * | 1983-12-15 | 1985-07-09 | Fujitsu Ltd | semiconductor equipment |
-
1987
- 1987-07-14 JP JP17633687A patent/JPS6419759A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60128651A (en) * | 1983-12-15 | 1985-07-09 | Fujitsu Ltd | semiconductor equipment |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5989785A (en) * | 1994-12-22 | 1999-11-23 | Nippondenso Co., Ltd. | Process for fabricating an electroluminescent device |
| EP1045445A2 (en) * | 1999-04-16 | 2000-10-18 | STMicroelectronics GmbH | Substantially voltage independent electrical resistance formed in an integrated circuit |
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