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JPS56110260A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56110260A
JPS56110260A JP1265780A JP1265780A JPS56110260A JP S56110260 A JPS56110260 A JP S56110260A JP 1265780 A JP1265780 A JP 1265780A JP 1265780 A JP1265780 A JP 1265780A JP S56110260 A JPS56110260 A JP S56110260A
Authority
JP
Japan
Prior art keywords
type
region
layers
transistor
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1265780A
Other languages
Japanese (ja)
Other versions
JPS6148269B2 (en
Inventor
Shoichi Shimizu
Kenichi Torii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1265780A priority Critical patent/JPS56110260A/en
Publication of JPS56110260A publication Critical patent/JPS56110260A/en
Publication of JPS6148269B2 publication Critical patent/JPS6148269B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To minimize the occupancy area of a differential-type transistor circuit by providing plural base layers and plural emitter layers in a collector layer of one island region where an element is separated. CONSTITUTION:An n type expitaxial layer 12 and a p type element separation layer 13 are formed on a p type silicon substrate 11. An n type island region 12 is provided as a collector layer and two independent base regions 141, 142 are provided in the said region 12. At the same time, emitter regions 151, 152 are provided in each base. In addition, an n type embedded layers 161, 162 are provided opposed to each base region, and collector terminal leading layers 171, 172 are led. This composite transistor is used as a differential transistor to form an ECL circuit. Then the element separation region of each transistor is no longer necessary, thus reducing the occupancy area of the ECL gate.
JP1265780A 1980-02-05 1980-02-05 Semiconductor device Granted JPS56110260A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1265780A JPS56110260A (en) 1980-02-05 1980-02-05 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1265780A JPS56110260A (en) 1980-02-05 1980-02-05 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56110260A true JPS56110260A (en) 1981-09-01
JPS6148269B2 JPS6148269B2 (en) 1986-10-23

Family

ID=11811422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1265780A Granted JPS56110260A (en) 1980-02-05 1980-02-05 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56110260A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009200502A (en) * 2009-03-19 2009-09-03 Hitachi Ltd Semiconductor integrated circuit device and method of manufacturing the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6222911A (en) * 1985-07-22 1987-01-31 Ngk Spark Plug Co Ltd Ceramic glow plug

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009200502A (en) * 2009-03-19 2009-09-03 Hitachi Ltd Semiconductor integrated circuit device and method of manufacturing the same

Also Published As

Publication number Publication date
JPS6148269B2 (en) 1986-10-23

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