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JPS6411369A - Manufacture of polycrystalline silicon thin film transistor - Google Patents

Manufacture of polycrystalline silicon thin film transistor

Info

Publication number
JPS6411369A
JPS6411369A JP62167276A JP16727687A JPS6411369A JP S6411369 A JPS6411369 A JP S6411369A JP 62167276 A JP62167276 A JP 62167276A JP 16727687 A JP16727687 A JP 16727687A JP S6411369 A JPS6411369 A JP S6411369A
Authority
JP
Japan
Prior art keywords
region
silicon
thin film
silicon thin
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62167276A
Other languages
Japanese (ja)
Inventor
Ken Sumiyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62167276A priority Critical patent/JPS6411369A/en
Publication of JPS6411369A publication Critical patent/JPS6411369A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To increase an electric field effect mobility, to reduce an OFF current, and to remarkably improve its characteristics by growing crystalline grains in a region to which silicon in an amorphous silicon thin film is implanted from a region to which the silicon is not ion implanted. CONSTITUTION:An amorphous silicon thin film 101 is formed, silicon is ion implanted through a mask 102, and the mask 102 is then removed. A region 103 to which the silicon is ion implanted and a region 104 to which the silicon is not ion implanted are formed in the film 101. Then, the film 101 is heat treated to crystallize the film 101. In the step of crystallizing, the region 104 is initially crystallized. As a result of the crystallization, the crystalline grains are elongated from the region 103 to the region 104, thereby exhibiting large mobility and a low OFF current.
JP62167276A 1987-07-03 1987-07-03 Manufacture of polycrystalline silicon thin film transistor Pending JPS6411369A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62167276A JPS6411369A (en) 1987-07-03 1987-07-03 Manufacture of polycrystalline silicon thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62167276A JPS6411369A (en) 1987-07-03 1987-07-03 Manufacture of polycrystalline silicon thin film transistor

Publications (1)

Publication Number Publication Date
JPS6411369A true JPS6411369A (en) 1989-01-13

Family

ID=15846743

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62167276A Pending JPS6411369A (en) 1987-07-03 1987-07-03 Manufacture of polycrystalline silicon thin film transistor

Country Status (1)

Country Link
JP (1) JPS6411369A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03290922A (en) * 1990-04-06 1991-12-20 Matsushita Electron Corp Manufacture of semiconductor thin film
US5242507A (en) * 1989-04-05 1993-09-07 Boston University Impurity-induced seeding of polycrystalline semiconductors
US5548132A (en) * 1994-10-24 1996-08-20 Micron Technology, Inc. Thin film transistor with large grain size DRW offset region and small grain size source and drain and channel regions
JP2003090360A (en) * 2001-09-17 2003-03-28 Nsk Warner Kk One-way clutch assembly

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5242507A (en) * 1989-04-05 1993-09-07 Boston University Impurity-induced seeding of polycrystalline semiconductors
JPH03290922A (en) * 1990-04-06 1991-12-20 Matsushita Electron Corp Manufacture of semiconductor thin film
US5548132A (en) * 1994-10-24 1996-08-20 Micron Technology, Inc. Thin film transistor with large grain size DRW offset region and small grain size source and drain and channel regions
US6214652B1 (en) 1994-10-24 2001-04-10 Micron Technology, Inc. Thin film transistors and method of forming thin film transistors
US6420219B2 (en) 1994-10-24 2002-07-16 Micron Technology, Inc. Thin film transistors and method of forming thin film transistors
JP2003090360A (en) * 2001-09-17 2003-03-28 Nsk Warner Kk One-way clutch assembly

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