JPS6384014A - Manufacture of semiconductor single crystal layer - Google Patents
Manufacture of semiconductor single crystal layerInfo
- Publication number
- JPS6384014A JPS6384014A JP61227187A JP22718786A JPS6384014A JP S6384014 A JPS6384014 A JP S6384014A JP 61227187 A JP61227187 A JP 61227187A JP 22718786 A JP22718786 A JP 22718786A JP S6384014 A JPS6384014 A JP S6384014A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon
- single crystal
- crystal layer
- porous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 37
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000000034 method Methods 0.000 claims abstract description 31
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000001301 oxygen Substances 0.000 claims abstract description 24
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 230000001681 protective effect Effects 0.000 claims abstract description 17
- 229910021426 porous silicon Inorganic materials 0.000 claims abstract description 14
- 238000000137 annealing Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000010408 film Substances 0.000 claims description 79
- 239000010409 thin film Substances 0.000 claims description 13
- 238000010894 electron beam technology Methods 0.000 claims description 8
- 238000001953 recrystallisation Methods 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 238000010574 gas phase reaction Methods 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 36
- 229910052710 silicon Inorganic materials 0.000 abstract description 34
- 239000010703 silicon Substances 0.000 abstract description 34
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 16
- 230000007547 defect Effects 0.000 abstract description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 6
- 238000000151 deposition Methods 0.000 abstract description 5
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 4
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000006104 solid solution Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000007787 solid Substances 0.000 description 7
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、絶縁膜上にシリコン等の単結晶層を形成する
技術に係わり、特に酸素や不純物濃度が低く、結晶欠陥
の少ない半導体単結晶層を製造する方法に関する。[Detailed Description of the Invention] [Objective of the Invention] (Industrial Application Field) The present invention relates to a technology for forming a single crystal layer of silicon or the like on an insulating film, and in particular has a low concentration of oxygen and impurities, and is free from crystal defects. The present invention relates to a method for manufacturing a semiconductor single crystal layer with a small amount of oxidation.
（従来の技術）
近年、電子ビームやレーザビーム等を利用したビームア
ニール法により、Ｓｏｌ膜（絶縁膜上のシリコン膜）を
形成する技術の開発が盛んに行われている。このＳＯＩ
技術の目指すところは、ＳＯＩ膜の形成には、単結晶シ
リコン基板上に絶縁層としての５ｉ０２膜を形成し、そ
の上に多結晶シリコン膜及び保護膜としての５ｉ０２膜
を堆積した構造を製作する。そして、上記のビームアニ
ール法により、多結晶シリコン膜を溶融・再結晶化させ
て、多結晶シリコン膜を単結晶化させる。この場合、ア
ニールの条件によっても異なるが、再結晶化後のＳｏｌ
膜は完全な単結晶層とはならず、種々の方位を持つ１〜
１００［μ７７Ｚ］程度の大きさの多結晶層となる。(Prior Art) In recent years, technology for forming a Sol film (silicon film on an insulating film) by a beam annealing method using an electron beam, a laser beam, or the like has been actively developed. This SOI
The aim of the technology is to form a SOI film by forming a 5i02 film as an insulating layer on a single crystal silicon substrate, and then depositing a polycrystalline silicon film and a 5i02 film as a protective film on top of it. . Then, by the beam annealing method described above, the polycrystalline silicon film is melted and recrystallized to form a single crystal. In this case, although it depends on the annealing conditions, Sol after recrystallization
The film is not a complete single-crystal layer, but consists of 1 to 1 crystals with various orientations.
This results in a polycrystalline layer with a size of about 100 [μ77Z].
また、絶縁膜の一部に開孔部を設け、この開孔部をシー
ドとして用いる方法が提案されている。Furthermore, a method has been proposed in which an opening is provided in a part of the insulating film and the opening is used as a seed.
この場合、開孔部ではシリコン膜がシリコン基板と直接
接触しているので、シリコン基板から縦方向及びそれに
続いて横方向にエピタキシャル成長が進行し、シリコン
基板の結晶方位情報を絶縁膜上に成長する単結晶層に与
えることができる。しかしながら、この方法を用いても
、シリコン基板と同一方位の単結晶層は、上記開孔部か
らの距離として高々 １００［μｍ］程度しか成長せず
、それコン膜が溶融状態にある際に、その上下に隣接す
る５ｉ０２膜の一部が溶解し、溶融シリコン中の酸素濃
度が高まりシリコン中の固溶限界濃度を越えてしまうた
め、シリコンが再結晶化する際に析出物が生成し、それ
が結晶粒界発生につながるものと考えられる。融点直下
の固相シリコン中の酸素の固溶限は１．５〜３ｘｌＯ［
０１−３コであり、通常のＳＯＩ再結晶化層中の酸素濃
度は〜１０［ｎ−３コ程度であるため、上記の結晶粒界
発生に関する考察は正当なものと言える。なお、第４図
中４１は単結晶シリコン基板、４２は５ｉ０２絶縁膜、
４３は多結晶シリコン膜、４４は５ｉ０２保護膜、４５
は単結晶化部、４６は溶融部を示している。In this case, since the silicon film is in direct contact with the silicon substrate in the opening, epitaxial growth progresses from the silicon substrate in the vertical direction and then in the horizontal direction, and the crystal orientation information of the silicon substrate is transferred to the insulating film. It can be applied to a single crystal layer. However, even if this method is used, the single crystal layer in the same orientation as the silicon substrate will only grow at a distance of about 100 [μm] from the opening, and when the condensation film is in a molten state, Part of the 5i02 film adjacent above and below it dissolves, and the oxygen concentration in the molten silicon increases, exceeding the solid solubility limit concentration in silicon. When the silicon recrystallizes, precipitates are formed and This is thought to lead to the generation of grain boundaries. The solid solubility limit of oxygen in solid silicon just below the melting point is 1.5 to 3xlO[
01-3, and the oxygen concentration in a normal SOI recrystallized layer is about 10 [n-3, so the above considerations regarding the generation of grain boundaries can be said to be valid. In addition, in FIG. 4, 41 is a single crystal silicon substrate, 42 is a 5i02 insulating film,
43 is a polycrystalline silicon film, 44 is a 5i02 protective film, 45
46 indicates a single crystallized portion, and 46 indicates a melted portion.
上記の問題を解決する方法として、保護用の５ｉ０２膜
の一部を開孔させる手法が提案されている。これは、溶
融したシリコン層中に含まれている過剰な酸素原子がシ
リコン原子と結合した一酸化シリコン（Ｓｉｎ）の形で
、上記開孔部から蒸発する現象を利用するものである。As a method for solving the above problem, a method has been proposed in which a portion of the protective 5i02 film is opened. This utilizes the phenomenon in which excess oxygen atoms contained in the molten silicon layer evaporate from the opening in the form of silicon monoxide (Sin) bonded to silicon atoms.
この方法に表面平坦性に問題があり、高密度集積回路素
子を形成することは困難である。This method has problems with surface flatness, making it difficult to form high-density integrated circuit devices.
（発明が解決しようとする問題点）
このように従来方法では、シリコンの再結晶化過程にお
ける溶融シリコン中の酸素濃度の増大を避けることはで
きず、結晶粒界発生を招き、良質のシリコン単結晶層を
製造することは困難であった。また、保護膜の一部を開
口すると、最終的に得られるＳＯＩ膜の表面平坦性が低
下する等のはかることができ、絶縁膜上に結晶欠陥の少
ない高品質のシリコン単結晶層を形成することのできる
半導体単結晶層の製造方法を提供することにある。(Problems to be Solved by the Invention) As described above, in the conventional method, it is impossible to avoid an increase in the oxygen concentration in molten silicon during the recrystallization process of silicon, which leads to the generation of grain boundaries, which leads to the formation of high-quality silicon monomers. It was difficult to produce crystalline layers. In addition, opening a part of the protective film can reduce the surface flatness of the final SOI film, thereby forming a high-quality silicon single crystal layer with few crystal defects on the insulating film. An object of the present invention is to provide a method for manufacturing a semiconductor single crystal layer that can be manufactured by using a semiconductor single crystal layer.
［発明の（１４成］
（問題点を解決するための手段）
本発明の骨子は、Ｓｏｌ膜の表面保護膜に、酸素原子や
酸化シリコン分子に対し透過性に富む物質を用いること
により、シリコンの再結晶化過程でシリコン中の過剰な
酸素を外方拡散させ、Ｓｏｌ再結晶化層の酸素濃度を低
減化し、従来技術での過剰酸素に起因した転位、双晶、
積層欠陥。[Number 14 of the Invention] (Means for Solving the Problems) The gist of the present invention is to use a substance that is highly permeable to oxygen atoms and silicon oxide molecules for the surface protection film of the Sol film. In the recrystallization process, excess oxygen in silicon is diffused outward, reducing the oxygen concentration in the Sol recrystallized layer, and eliminating dislocations, twins, and
Stacking fault.
結晶粒界等の結晶欠陥の発生を抑制することにある。さ
らに、上記酸素原子や酸化シリコン分子に対し透過性に
富む物質として、多孔質の薄膜を用いることにある。The purpose is to suppress the occurrence of crystal defects such as grain boundaries. Furthermore, a porous thin film is used as the substance highly permeable to the oxygen atoms and silicon oxide molecules.
即ち本発明は、半導体基板上に形成された絶縁膜上に半
導体単結晶層を製造する方法において、前記絶縁膜上に
非晶質若しくは多結晶の半導体薄膜を形成したのち、こ
の半導体薄膜上に多孔質薄上記の方法であれば、シリコ
ンの溶融・再結晶化過程で、シリコン層に接する５ｉ０
２等の絶縁膜からシリコン中に溶出する過剰な酸素を、
保護膜を通して外方に移動させることができる。従って
、シリコン中の酸素濃度を、シリコンの固溶限以内に低
減することが可能となる。その結果、従来技術における
、Ｓ０１層中の過剰な酸素の析出に起因した結晶欠陥の
発生を抑制することが可能となる。That is, the present invention provides a method for manufacturing a semiconductor single crystal layer on an insulating film formed on a semiconductor substrate, in which an amorphous or polycrystalline semiconductor thin film is formed on the insulating film, and then a semiconductor thin film is formed on the semiconductor thin film. Porous Thin With the method described above, 5i0 in contact with the silicon layer is
Excess oxygen eluted from the second grade insulating film into silicon,
It can be moved outward through the protective membrane. Therefore, it is possible to reduce the oxygen concentration in silicon to within the solid solubility limit of silicon. As a result, it becomes possible to suppress the occurrence of crystal defects caused by excessive precipitation of oxygen in the S01 layer in the prior art.
（実施例） 以下、本発明の詳細を図示の実施例によって説明する。(Example) Hereinafter, details of the present invention will be explained with reference to illustrated embodiments.
第１図（ａ）〜（ｃ）は本発明の第１の実施例に係わる
シリコン単結晶層の製造工程を示す断面図である。まず
、第１図（ａ）に示す如く、（１００）方位の単結晶シ
リコン基板１１上にＣＶＤ法により厚さ １．５［μ７
７Ｚ］の５ｉ０２膜（絶縁膜）１２を堆積し、その上に
ＳｉＨ４の熱分解を用いたＣＶＤ法により厚さ０．６［
μｍ］の化膜１４は、酸素原子、酸素分子及び酸化シリ
コン分子等よりも大きな孔を多数含んでいるため、これ
らが容易に該被膜中を拡散できると共に、溶融したシリ
コンの液滴に比較すると被膜に含まれる孔は十分に小さ
いので、ＳＯＩ層の溶融・再結晶化過程において、十分
な性能の表面保護膜として機能するものである。FIGS. 1(a) to 1(c) are cross-sectional views showing the manufacturing process of a silicon single crystal layer according to a first embodiment of the present invention. First, as shown in FIG. 1(a), a single crystal silicon substrate 11 with a (100) orientation is coated with a thickness of 1.5 [μ7] by CVD.
A 5i02 film (insulating film) 12 of 7Z] is deposited, and a 5i02 film (insulating film) 12 of 0.6[
μm] film 14 contains many pores larger than oxygen atoms, oxygen molecules, silicon oxide molecules, etc., so these can easily diffuse through the film, and compared to molten silicon droplets, Since the pores contained in the film are sufficiently small, it functions as a surface protective film with sufficient performance during the melting and recrystallization process of the SOI layer.
なお、上記多孔質シリコン酸化膜１４の形成には、例え
ばＳｉＨ４及び０２の混合ガスのマイク［ｃｃ／ｍｉｎ
］ 、チャンバ内圧力１ ［ｔｏｒｒｌ 、マイク
ロ波（２，４５Ｇ Ｈｚ ）電力５００ ［Ｗコとした
。堆積速度は〜１５０［入／ｓｅｅ］と高速のため、多
孔質性のシリコン酸化膜が形成される。本実施例では、
４０秒間の堆積により〜０．６［μ７７Ｚ］厚の多孔質
シリコン酸化膜を形成した。In addition, for forming the porous silicon oxide film 14, for example, a microphone [cc/min] of a mixed gas of SiH4 and 02 is used.
], chamber internal pressure 1 [torrl, microwave (2.45 GHz), power 500 [W]. Since the deposition rate is as high as ~150 [in/see], a porous silicon oxide film is formed. In this example,
By depositing for 40 seconds, a porous silicon oxide film with a thickness of ~0.6 [μ77Z] was formed.
以上の手順で作成した試料を、第１図（ｃ）に示す如く
、電子ビーム１５の走査によりビームアニールした。即
ち、走査型電子ビームアニールにより、多結晶シリコン
膜１３を順次溶融・再結晶化させた。ここで、電子ビー
ムは３６［ＭＨｚ］の振幅変調した正弦波により、半値
幅約１５０［μ７７１］のスポットビームを一方向に高
速偏向することにより、長さ約５［Ｍ］に疑似的に線状
化したものを用いた。振幅変調には、周波数１０［ＫＨ
ｚ］で線状化ビームの長さ方向強度分布を均一化するた
めに、計算機制御された波形を持つ変調波を用いた。The sample prepared by the above procedure was beam annealed by scanning with an electron beam 15, as shown in FIG. 1(c). That is, the polycrystalline silicon film 13 was sequentially melted and recrystallized by scanning electron beam annealing. Here, the electron beam is formed into a pseudo line with a length of about 5 [M] by rapidly deflecting a spot beam with a half-width of about 150 [μ771] in one direction using a 36 [MHz] amplitude-modulated sine wave. We used the one that had been transformed into a For amplitude modulation, frequency 10 [KH
z], a modulated wave with a computer-controlled waveform was used to equalize the longitudinal intensity distribution of the linearized beam.
この線状化ビームを線状方向と直角な方向に走査した。This linearized beam was scanned in a direction perpendicular to the linear direction.
走査速度は１００ ［Ｍ／ｓｅｅ ］ 、ビーム加の結
晶粒界が多数存在するが、本実施例では平均間隔が２０
０［μ７ｒＬ］となり、均一な単結晶領域の面積が飛躍
的に増大した。この効果は、再結晶化過程において、溶
融した３０１層中の過剰な酸素が多孔質シリコン酸化膜
１４中を、無数の微細な孔を通って高速に拡散し、表面
から蒸発することにより、Ｓ０１層中の酸素濃度が大幅
に低減されたことに基くものと考えられる。The scanning speed is 100 [M/see], and there are many grain boundaries due to beam application, but in this example, the average interval is 20
0 [μ7rL], and the area of the uniform single crystal region increased dramatically. This effect occurs because during the recrystallization process, excess oxygen in the melted 301 layer diffuses at high speed through countless fine pores in the porous silicon oxide film 14 and evaporates from the surface. This is thought to be due to a significant reduction in the oxygen concentration in the layer.
かくして本実施例方法によれば、多結晶シリコン膜１３
上に保護膜としての多孔質シリコン酸化膜１４を堆積し
ておくことにより、ビームアニールの際に溶融シリコン
中の酸素を外方に逃がすこ、とができ、シリコン中の酸
素濃度をシリコンの固溶限以下に低減させることができ
る。このため、結晶粒界発生を抑制することができ、結
晶欠陥の少ない良質のシリコン単結晶層を形成すること
ができる。また、保護膜としての多孔質シリコン酸化膜
１４は連続した状態であるので、形成されるＳｏｌ膜の
表面平坦性は良好なものとなる。Thus, according to the method of this embodiment, the polycrystalline silicon film 13
By depositing a porous silicon oxide film 14 on top as a protective film, oxygen in the molten silicon can escape to the outside during beam annealing, and the oxygen concentration in the silicon can be lowered to the solid state of the silicon. It can be reduced below the solubility limit. Therefore, the generation of grain boundaries can be suppressed, and a high quality silicon single crystal layer with few crystal defects can be formed. Further, since the porous silicon oxide film 14 as a protective film is continuous, the surface flatness of the formed Sol film is good.
次に、本発明の第２の実施例方法について説明は、先の
実施例で用いた試料の上部にＣＶＤ法により、厚さ ０
．１［μｍ］の多結晶シリコン膜１６を堆積させたもの
である。Next, the method of the second embodiment of the present invention will be explained.
．． A polycrystalline silicon film 16 having a thickness of 1 [μm] is deposited.
この試料を先の実施例と同様に、走査型電子ビームアニ
ールにより、３０１層を溶融や再結晶化させた。この結
果得られたＳ０１層では、結晶粒界の発生は極めて少な
く、結晶粒界の間隔は１〜３ ［Ｍ］と広く、部分的に
は〜５ ［Ｍ］間隔の領域も存在する。このような大面
積の単結晶層は、酸化膜１４中を拡散し、表面の多結晶
シリコン膜１６のシリコン原子と反応して５ｉ０２層を
形成することにより、Ｓ０１層中の酸素濃度がシリコン
中の酸素の固溶限よりも大幅に低いものとなり、結晶粒
界発生が完全に抑制されたためと考えられる。As in the previous example, this sample was subjected to scanning electron beam annealing to melt and recrystallize the 301 layer. In the S01 layer obtained as a result, the occurrence of grain boundaries is extremely small, and the interval between grain boundaries is as wide as 1 to 3 [M], with some regions having an interval of ~5 [M]. Such a large-area single-crystal layer diffuses through the oxide film 14 and reacts with silicon atoms of the polycrystalline silicon film 16 on the surface to form a 5i02 layer, so that the oxygen concentration in the S01 layer becomes lower than that in the silicon. It is thought that this is because the solid solubility limit of oxygen was significantly lower than the solid solubility limit of oxygen, and the generation of grain boundaries was completely suppressed.
次に、本発明の第３の実施例方法について説明する。こ
の実施例では、試料として第３図に示す構造のものを用
いた。即ち、（１００）面方位の単結晶シリコン基板１
１上にＣＶＤ法により厚さ２［μｍ］の５ｉ０２膜１２
を堆積し、通常のフォトエツチング法により幅２ ［μ
ｍ］のシード部とすべき開口部１７を形成し、次いでＳ
ｉＨ４の熱分解を用いたＣＶＤ法により全面に厚さ ０
．６［μｍ］の多結晶シリコン膜１３を堆積する。さら
に、その上に第２の実施例と同様に、多孔質シリコン酸
化膜１４及び多結晶シリコン膜１６を順次堆積させたも
のである。Next, a third embodiment method of the present invention will be described. In this example, the structure shown in FIG. 3 was used as a sample. That is, a single crystal silicon substrate 1 with (100) plane orientation
1, a 5i02 film 12 with a thickness of 2 [μm] is formed by CVD method.
is deposited and then processed to a width of 2 [μ
m] to form the opening 17 to be the seed part, and then
The entire surface is coated with a thickness of 0 using the CVD method using thermal decomposition of iH4.
．． A polycrystalline silicon film 13 of 6 [μm] is deposited. Furthermore, as in the second embodiment, a porous silicon oxide film 14 and a polycrystalline silicon film 16 are sequentially deposited thereon.
この試料を、走査型電子ビームアニールにより、Ｓ０１
層を溶融・再結晶化させた。この結果得らドで囲まれた
領域が結晶粒界の自宛全単結晶層として得られた。This sample was subjected to scanning electron beam annealing.
The layer was melted and recrystallized. As a result, the region surrounded by dots was obtained as a self-directed whole single crystal layer of grain boundaries.
なお、本発明は上述した各実施例方法に限定されるもの
ではない。例えば、ＳＯ■の上部に被着する表面保護膜
としては、多孔質シリコン酸化膜に限らず、多孔質薄膜
であればよい。多孔質薄膜としては、多孔質シリコン酸
化膜の他に、酸素をんだ多孔質シリコン膜、多孔質アル
ミナ膜、多孔質イツトリア、多孔質ジルコニア、多孔質
ハフニウム酸化膜、或いはこれらの混合物等を用いるこ
とができる。また、これらの多孔質薄膜の形成には、マ
イクロ波放電を利用した気相反応に限らず、スパッタリ
ング法、真空蒸着法、陽極酸化法等を用いることが可能
である。Note that the present invention is not limited to the methods of each embodiment described above. For example, the surface protective film to be deposited on top of the SO2 is not limited to a porous silicon oxide film, but may be any porous thin film. As the porous thin film, in addition to the porous silicon oxide film, an oxygen-containing porous silicon film, a porous alumina film, a porous yttoria, a porous zirconia, a porous hafnium oxide film, or a mixture thereof is used. be able to. In addition, the formation of these porous thin films is not limited to gas phase reaction using microwave discharge, but may also include sputtering, vacuum evaporation, anodic oxidation, and the like.
また、多孔質薄膜の上部に設ける酸素吸収層の材料は、
必ずしも多結晶シリコンである必要はなく、非晶質シリ
コン、ゲルマニウム、ＧａＡｓ。In addition, the material of the oxygen absorption layer provided on the top of the porous thin film is
It does not necessarily have to be polycrystalline silicon, but can be amorphous silicon, germanium, or GaAs.
ＧａＰ等の半導体やＳｎ、Ｔｉ、Ｈｆ、Ｎｂ。Semiconductors such as GaP, Sn, Ti, Hf, Nb.
Ｆｅ、Ｃｕ、Ｉｎ、Ｓｂ、Ｎｉ、Ｐｄ、Ａノ等の用いた
ゾーンメルティング法（ＺＭＲ法）等を用いても同様の
効果が得られる。また、半導体薄膜としては、多結晶シ
リコンの代りに、非晶質シリコンを用いることができ、
さらに他の半導体装置を用いることも可能である。その
他、本発明の要旨を逸脱しない範囲で、種々変形して実
施することができる。Similar effects can be obtained by using a zone melting method (ZMR method) using Fe, Cu, In, Sb, Ni, Pd, A, etc. Furthermore, as the semiconductor thin film, amorphous silicon can be used instead of polycrystalline silicon.
Furthermore, it is also possible to use other semiconductor devices. In addition, various modifications can be made without departing from the gist of the present invention.
［発明の効果］
防止することができる。従って、絶縁膜上に結晶欠陥の
少ない良質の半導体単結晶層を形成することができる。[Effects of the invention] Can be prevented. Therefore, a high quality semiconductor single crystal layer with few crystal defects can be formed on the insulating film.
第１図（ａ）〜（ｃ）は本発明の第１の実施例方法に係
わるシリコン単結晶層の製造工程を示す断面図、第２図
は本発明の第２の実施例方法に用いた試料構造を示す断
面図、第３図は本発明の第３の実施例方法に用いた試料
構造を示す断面図、第４図は従来の問題点を説明するた
めの模式図である。
１１・・・単結晶シリコン基板、１２・・・５ｉ０２膜
（絶縁膜）、１３・・・多結晶シリコン膜（半導体薄膜
）、１４・・・多孔質シリコン酸化膜（保護膜）、１５
・・・電子ビーム、１６・・・多結晶シリコン膜、１７
・・・開口部。FIGS. 1(a) to (c) are cross-sectional views showing the manufacturing process of a silicon single crystal layer according to the method of the first embodiment of the present invention, and FIG. FIG. 3 is a cross-sectional view showing the sample structure used in the third embodiment method of the present invention, and FIG. 4 is a schematic diagram for explaining the problems of the conventional method. 11... Single crystal silicon substrate, 12... 5i02 film (insulating film), 13... Polycrystalline silicon film (semiconductor thin film), 14... Porous silicon oxide film (protective film), 15
...electron beam, 16...polycrystalline silicon film, 17
···Aperture.
Claims (6)
晶層を製造する方法において、前記絶縁膜上に非晶質若
しくは多結晶の半導体薄膜を形成するをアニールして溶
融・再結晶化する工程とを含むことを特徴とする半導体
単結晶層の製造方法。(1) In a method of manufacturing a semiconductor single crystal layer on an insulating film formed on a semiconductor substrate, an amorphous or polycrystalline semiconductor thin film is formed on the insulating film by annealing and melting/recrystallization. A method for manufacturing a semiconductor single crystal layer, comprising the steps of:
たことを特徴とする特許請求の範囲第１項記載の半導体
単結晶層の製造方法。(2) The method for manufacturing a semiconductor single crystal layer according to claim 1, wherein a porous silicon oxide film is used as the protective film.
、多孔質アルミナ膜、多孔質ジルコニア膜、多孔質イッ
トリア膜、或いは多孔質ハフニウム酸化膜、またはこれ
らの混合物を用いたことを特徴とする特許請求の範囲第
１項記載の半導体単結晶層の製造方法。(3) The protective film is characterized in that a porous silicon film containing oxygen, a porous alumina film, a porous zirconia film, a porous yttria film, a porous hafnium oxide film, or a mixture thereof is used. A method for manufacturing a semiconductor single crystal layer according to claim 1.
の上に半導体層及び金属層の少なくとも一方を被着する
ことを特徴とする特許請求の範囲第１項、第２項又は第
３項記載の半導体単結晶層の製造方法。(4) Before annealing the semiconductor thin film, at least one of a semiconductor layer and a metal layer is deposited on the protective film. The method for manufacturing the semiconductor single crystal layer described above.
利用した気相反応を用いたことを特徴とする特許請求の
範囲第１項記載の半導体単結晶層の製造方法。(5) The method for manufacturing a semiconductor single crystal layer according to claim 1, characterized in that the step of forming the protective film uses a gas phase reaction using microwave discharge.
ビーム或いはレーザービームを用いたことを特徴とする
特許請求の範囲第１項記載の半導体単結晶層の製造方法
。(6) The method for manufacturing a semiconductor single crystal layer according to claim 1, wherein an electron beam or a laser beam is used in the step of annealing the semiconductor thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61227187A JPS6384014A (en) | 1986-09-27 | 1986-09-27 | Manufacture of semiconductor single crystal layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61227187A JPS6384014A (en) | 1986-09-27 | 1986-09-27 | Manufacture of semiconductor single crystal layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6384014A true JPS6384014A (en) | 1988-04-14 |
| JPH0517693B2 JPH0517693B2 (en) | 1993-03-09 |
Family
ID=16856852
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61227187A Granted JPS6384014A (en) | 1986-09-27 | 1986-09-27 | Manufacture of semiconductor single crystal layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6384014A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6392012A (en) * | 1986-10-01 | 1988-04-22 | コーニング グラス ワークス | Laminated article and manufacture of the same |
| US5123975A (en) * | 1989-03-28 | 1992-06-23 | Ricoh Company, Ltd. | Single crystal silicon substrate |
| US5405802A (en) * | 1992-01-31 | 1995-04-11 | Canon Kabushiki Kaisha | Process of fabricating a semiconductor substrate |
| AT513692A1 (en) * | 2012-12-10 | 2014-06-15 | Tgw Logistics Group Gmbh | Sorting system and method for sorting objects in a conveyor system |
-
1986
- 1986-09-27 JP JP61227187A patent/JPS6384014A/en active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6392012A (en) * | 1986-10-01 | 1988-04-22 | コーニング グラス ワークス | Laminated article and manufacture of the same |
| US5123975A (en) * | 1989-03-28 | 1992-06-23 | Ricoh Company, Ltd. | Single crystal silicon substrate |
| US5405802A (en) * | 1992-01-31 | 1995-04-11 | Canon Kabushiki Kaisha | Process of fabricating a semiconductor substrate |
| US5679475A (en) * | 1992-01-31 | 1997-10-21 | Canon Kabushiki Kaisha | Semiconductor substrate and process for preparing the same |
| AT513692A1 (en) * | 2012-12-10 | 2014-06-15 | Tgw Logistics Group Gmbh | Sorting system and method for sorting objects in a conveyor system |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0517693B2 (en) | 1993-03-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR960001466B1 (en) | Semiconductor materials, fabrication methods thereof, and thin film transistors | |
| JPS58130517A (en) | Manufacture of single crystal thin film | |
| JPS60202952A (en) | Manufacture of semiconductor device | |
| GB2142346A (en) | Method of formation of layer of multiconstituent material | |
| JPS6384014A (en) | Manufacture of semiconductor single crystal layer | |
| JP3138174B2 (en) | Low temperature selective growth method of silicon or silicon alloy | |
| JP2840081B2 (en) | Semiconductor thin film manufacturing method | |
| JP2774855B2 (en) | Gettering effect enhanced silicon substrate and method of manufacturing the same | |
| JPS63283013A (en) | Forming method for polycrystalline silicon thin film | |
| JPH11251241A (en) | Method for manufacturing crystalline silicon layer, method for manufacturing solar cell, and method for manufacturing thin film transistor | |
| JPH01149483A (en) | Solar cell | |
| JPS61174621A (en) | Manufacture of semiconductor thin crystal | |
| JP2706770B2 (en) | Semiconductor substrate manufacturing method | |
| JPH0361335B2 (en) | ||
| JPH01149418A (en) | Substrate for electronic element and manufacture thereof | |
| JPS6384013A (en) | Manufacture of semiconductor crystal layer | |
| JPS6012775B2 (en) | Method for forming a single crystal semiconductor layer on a foreign substrate | |
| JPH02105517A (en) | Manufacture of semiconductor device | |
| JPH0334847B2 (en) | ||
| JP2861683B2 (en) | Method of forming amorphous silicon film | |
| JPH04151820A (en) | Semiconductor device | |
| Inoue et al. | Electron-beam recrystallization of silicon layers on silicon dioxide | |
| JPS5893218A (en) | Manufacture of semiconductor thin film structure | |
| JP2002118120A (en) | Thin film transistor and its manufacturing method | |
| JPS59101822A (en) | Manufacture of substrate for semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |