JPS6379305A - Manufacture of nife pattern - Google Patents
Manufacture of nife patternInfo
- Publication number
- JPS6379305A JPS6379305A JP22539686A JP22539686A JPS6379305A JP S6379305 A JPS6379305 A JP S6379305A JP 22539686 A JP22539686 A JP 22539686A JP 22539686 A JP22539686 A JP 22539686A JP S6379305 A JPS6379305 A JP S6379305A
- Authority
- JP
- Japan
- Prior art keywords
- nife
- pattern
- layer
- film
- frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims abstract description 38
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000007747 plating Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 9
- 238000004544 sputter deposition Methods 0.000 abstract description 5
- 229910001325 element alloy Inorganic materials 0.000 abstract 1
- 230000008030 elimination Effects 0.000 abstract 1
- 238000003379 elimination reaction Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 18
- 239000010410 layer Substances 0.000 description 17
- 239000010409 thin film Substances 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229910002058 ternary alloy Inorganic materials 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000004577 thatch Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Thin Magnetic Films (AREA)
- Electroplating Methods And Accessories (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は旧Ｆｅパターンの製造方法に関し、特に薄膜磁
気ヘッドの磁気コアに用いるＮｉＦｅめっきパターンの
形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for manufacturing old Fe patterns, and more particularly to a method for forming NiFe plating patterns used in magnetic cores of thin film magnetic heads.
従来の薄膜磁気ヘッドの磁気コアに用いるＮｉＦｅめつ
き膜のパターン形成方法としては、第２図（ａ＞に示す
ように、基板１上に第１の金属膜２の密着層を蒸着、ま
たはスパッタにより形成してから、第１のＮｌｃｅ層３
を蒸着、またはスパッタにより形成する。その後フレー
ム４と呼ばれるフォＩ・レジストの一枠を遺り、第２の
ＮｉＦｅ層５を電気めっき法によりフレーム４以外の場
所に付着させた後、第２図（ｂ）に示すよう゛に、フレ
ーム４の枠内の第２のＮｉＦｅ層５をフォトレジストパ
ターン６で覆う。さらに３、第２図（ｃ）に示すように
、フォトレジストパターン６の外ｆｌｌｌＪの第２の旧
Ｆ’ｅ層をエツチング液で除去する方法がある（例えば
特開昭５０−９５１４７参照）。As a pattern forming method for a NiFe plated film used for the magnetic core of a conventional thin-film magnetic head, as shown in FIG. After forming the first Nlce layer 3
is formed by vapor deposition or sputtering. After that, leaving a frame of photoresist called frame 4, a second NiFe layer 5 was deposited on the area other than the frame 4 by electroplating, and then as shown in FIG. 2(b), The second NiFe layer 5 within the frame 4 is covered with a photoresist pattern 6 . Furthermore, as shown in FIG. 2(c), there is a method of removing the second old F'e layer of flllJ outside the photoresist pattern 6 using an etching solution (for example, see Japanese Patent Laid-Open No. 50-95147).
上述した従来のＮｉＦｅパターンの形成方法は、エツチ
ング液による第２のＮｉＦｅ層５の除去の際にエツチン
グ時間が長すぎた場合などには、第２図（ｃ）の第１の
ＮｉＦｅ層３のアンダーカッＩ−７が長くなり、はなは
だしい場合には、エツチングがフレーム４内部の第１の
ＮｉＦｅ層３にまで及び、所望のＮｉＦｅパターンが得
られないという欠点があった。これはＴｉ、Ｃｒなどの
密着層の金属′ｐ！ｉ４２と、第１のＮｉＦｅ層３との
間に局部電池が出来て、陽極側にある第１のＮｉＦｅ層
３のエツチングが促進されるからである。In the conventional NiFe pattern formation method described above, if the etching time is too long when removing the second NiFe layer 5 with an etching solution, the first NiFe layer 3 shown in FIG. If the undercut I-7 becomes long and very large, the etching will extend to the first NiFe layer 3 inside the frame 4, resulting in a disadvantage that a desired NiFe pattern cannot be obtained. This is the metal 'p! of the adhesion layer such as Ti and Cr! This is because a local cell is formed between the i42 and the first NiFe layer 3, and the etching of the first NiFe layer 3 on the anode side is promoted.
本発明の目的は、このような問題を解決し、ＮｉＦｅ層
のアンダーカットをなくし、高品質のパターンを形成で
きるＮｉＦｅパターンの製造方法を提供することにある
。An object of the present invention is to provide a method for manufacturing a NiFe pattern that can solve these problems, eliminate undercuts in the NiFe layer, and form a high-quality pattern.
本発明の構成は、基板上に第１および第２の金属膜を付
着し、この第２の金属膜上に、フォトレジストの枠を形
成し、このフォトレジストの枠以外の第２の金属膜上に
ＮｉＦｅめっき層を形成した後に前記フォＩ・レジス１
−の枠の外側のＮｉＦｅめっき層を除去するＮｉＦｅパ
ターンの製造方法において、前記第２の金属膜がＮｉ、
Ｆｅおよび第３の金属元素からなる合金であることを特
徴とする。The structure of the present invention is to deposit first and second metal films on a substrate, form a photoresist frame on the second metal film, and cover the second metal film other than the photoresist frame. After forming a NiFe plating layer on top, the FoI resist 1
- In the method for manufacturing a NiFe pattern in which the NiFe plating layer outside the frame is removed, the second metal film is made of Ni,
It is characterized by being an alloy consisting of Fe and a third metal element.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図（ａ）〜（ｄ）は本発明の一実ｊ５＠例を工程順
に示した断面図である。まず、第１図（ａ）のように、
基板１との密着層２として厚さ３００人のＴｉ膜をスパ
ッタで形成する。次に、Ｎ！０．７５Ｆｅ、）、 、、
’ｒｉｏ、 １０の組成を持つ厚さ１０００人のＮｉＦ
ｅＴｉ膜８をスパッタで形成する。この金属膜８はＴｉ
が増加するほどＮｉＦｅＴｉ膜がエツチングされにくく
なるが、ＮｉＦｅめっき膜が付着しにくくなる。また、
膜の飽和磁化も低下するので、Ｔｉは３０ｗし％以下で
あることが好ましい。FIGS. 1(a) to 1(d) are cross-sectional views showing one example of the present invention in the order of steps. First, as shown in Figure 1(a),
A Ti film having a thickness of 300 mm is formed by sputtering as an adhesion layer 2 to the substrate 1. Next, N! 0.75Fe, ), ,,
'rio, 1000 thick NiF with a composition of 10
An eTi film 8 is formed by sputtering. This metal film 8 is made of Ti
As the number increases, the NiFeTi film becomes less likely to be etched, but the NiFe plating film becomes less likely to adhere. Also,
Since the saturation magnetization of the film also decreases, the content of Ti is preferably 30w% or less.
次に、フォトレジストでフレーム４を形成した後、電気
めっき法によりＮｉＦｅ層５を付着させる。Next, after forming the frame 4 with photoresist, a NiFe layer 5 is deposited by electroplating.
さらに、第１図（ｂ）に示すように、フレーム１１の枠
内のＮｉＦｅ層５をフォトレジストパターン６で覆う。Furthermore, as shown in FIG. 1(b), the NiFe layer 5 within the frame 11 is covered with a photoresist pattern 6. Then, as shown in FIG.
この時、−旦フレーム４を有機溶剤等で除去した後に、
フォトレジストパターン６と形成しても良い。At this time, after removing the frame 4 with an organic solvent or the like,
It may also be formed with a photoresist pattern 6.
次に、第１図（ｃ）に示すように、ＦｅＣ４？ ３でフ
ォトレジストパターン６の外側にあるＮｉＦｅ膜５をエ
ツチング除去する。この時、ＮｉＦｅＴｉ膜８のエツチ
ングレートは低く、第２図（ｃ）に示したようなアンダ
ーカットは生じにくい。Next, as shown in FIG. 1(c), FeC4? In step 3, the NiFe film 5 outside the photoresist pattern 6 is removed by etching. At this time, the etching rate of the NiFeTi film 8 is low, and undercuts as shown in FIG. 2(c) are unlikely to occur.
さらに、第１図（ｄ）に示すように、フォトレジストパ
ターンを有機溶剤等で除去した後、イオンミリング等で
ＮｉＦｅＴｉ膜８および密着層２を除去することにより
、ＮｉＦｅパターンを得る。Further, as shown in FIG. 1(d), after removing the photoresist pattern with an organic solvent or the like, the NiFeTi film 8 and the adhesion layer 2 are removed by ion milling or the like to obtain a NiFe pattern.
本発明の第２の実施例としては、密着層２がＣｒである
こと、および第２の金属膜８がＮｉｏ、７ｇＦｅｏ、１
７ｃｒＱ、０５である場合で、これ以外は第１の実施例
と全く同様である。ただし、第２の金属ＪＩＡ８の３元
合金の第３元素としてＣｒを入れた場合は、飽和磁化が
著しく低下する（Ｃｒ１０％で半分程度になる）ので、
Ｃｒの含有量は１０ｗｔ％以下であることか好ましい。In the second embodiment of the present invention, the adhesive layer 2 is made of Cr, and the second metal film 8 is made of Nio, 7gFeo, 1
7crQ, 05, and the rest is completely the same as the first embodiment. However, if Cr is added as the third element in the ternary alloy of the second metal JIA8, the saturation magnetization will drop significantly (about half at 10% Cr).
It is preferable that the Cr content is 10 wt% or less.
以上説明したように、本発明は、ＮｉＦｅめっきの導電
性下地としてＴｉ、Ｃｒ等を第３次元素として含むＮｉ
Ｆｅ系３元合金を用いることにより、アンダーカットに
よるオーバーエツチングの少ないＮｉＦｅパターンを形
成でき、品質のよい薄膜磁気ヘッドを得ることが出来る
。As explained above, the present invention uses Ni containing Ti, Cr, etc. as a tertiary element as a conductive base for NiFe plating.
By using a Fe-based ternary alloy, a NiFe pattern with less overetching due to undercuts can be formed, and a high quality thin film magnetic head can be obtained.
第１図（ａ）〜（ｄ）は本発明の一実施例の製造方法を
工程順に示す断面図、第２図（ａ）〜（ｃ）は従来の製
造方法を工程順に示す断面図である。
１・・・基板、２・・・第１の金属膜、３・・・第２の
金属膜、４・・・フレーム、５・・・ＮｉＦｅ膜、６・
・・レジストパターン、７・・・アンダーカッＩ・、８
・・・３元系ＮｉＦｅ合涛 ／ 河（ｂ）
ぞイ５ ／ ｙ！Ｊ （Ｃ）千 ／ 閃ｄ
）
＄２ＷＪ（ｔＬ）
＄ ２ 図（ｂ）
茅 ２ ｍ（（：）FIGS. 1(a) to (d) are cross-sectional views showing a manufacturing method according to an embodiment of the present invention in order of steps, and FIGS. 2(a) to (c) are cross-sectional views showing a conventional manufacturing method in order of steps. . DESCRIPTION OF SYMBOLS 1... Substrate, 2... First metal film, 3... Second metal film, 4... Frame, 5... NiFe film, 6...
...Resist pattern, 7...Undercut I...8
...Three-component NiFe combination / Kawa (b) Zoi 5 / y! J (C) Sen d
) $2WJ (tL) $2 Figure (b) Thatch 2 m ((:)
Claims (3)
第２の金属膜上にフォトレジストの枠を形成し、このフ
ォトレジストの枠以外の第２の金属膜上にＮｉＦｅめっ
き層を形成した後に前記フォトレジストの枠の外側のＮ
ｉＦｅめっき層を除去するＮｉＦｅパターンの製造方法
において、前記第２の金属膜がＮｉ、Ｆｅおよび第３の
金属元素からなる合金であることを特徴とするＮｉＦｅ
パターンの製造方法。(1) Depositing first and second metal films on a substrate, forming a photoresist frame on the second metal film, and NiFe plating on the second metal film other than the photoresist frame. N outside the frame of the photoresist after forming the layer
A method for manufacturing a NiFe pattern in which an iFe plating layer is removed, wherein the second metal film is an alloy consisting of Ni, Fe, and a third metal element.
How to make the pattern.
項記載のＮｉＦｅパターンの製造方法。(2) Claim 1 in which the third metal element is Ti
A method for manufacturing a NiFe pattern as described in .
項記載のＮｉＦｅのパターンの製造方法。(3) Claim 1 in which the third metal element is Cr
A method for manufacturing a NiFe pattern as described in .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22539686A JPS6379305A (en) | 1986-09-22 | 1986-09-22 | Manufacture of nife pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22539686A JPS6379305A (en) | 1986-09-22 | 1986-09-22 | Manufacture of nife pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6379305A true JPS6379305A (en) | 1988-04-09 |
Family
ID=16828703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22539686A Pending JPS6379305A (en) | 1986-09-22 | 1986-09-22 | Manufacture of nife pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6379305A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0271413A (en) * | 1988-05-12 | 1990-03-12 | Digital Equip Corp <Dec> | Manufacture of pole piece having improved magnetic domain structure |
| JPH07114708A (en) * | 1993-10-18 | 1995-05-02 | Fuji Elelctrochem Co Ltd | Method of manufacturing thin film magnetic head |
| US6791794B2 (en) | 2000-09-28 | 2004-09-14 | Nec Corporation | Magnetic head having an antistripping layer for preventing a magnetic layer from stripping |
-
1986
- 1986-09-22 JP JP22539686A patent/JPS6379305A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0271413A (en) * | 1988-05-12 | 1990-03-12 | Digital Equip Corp <Dec> | Manufacture of pole piece having improved magnetic domain structure |
| JPH07114708A (en) * | 1993-10-18 | 1995-05-02 | Fuji Elelctrochem Co Ltd | Method of manufacturing thin film magnetic head |
| US7023659B2 (en) | 1999-09-30 | 2006-04-04 | Nec Corporation | Magnetic head having an antistripping layer for preventing a magnetic layer from stripping |
| US6791794B2 (en) | 2000-09-28 | 2004-09-14 | Nec Corporation | Magnetic head having an antistripping layer for preventing a magnetic layer from stripping |
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