JPS63228038A - Semiconductor pressure transducer - Google Patents
Semiconductor pressure transducerInfo
- Publication number
- JPS63228038A JPS63228038A JP28012286A JP28012286A JPS63228038A JP S63228038 A JPS63228038 A JP S63228038A JP 28012286 A JP28012286 A JP 28012286A JP 28012286 A JP28012286 A JP 28012286A JP S63228038 A JPS63228038 A JP S63228038A
- Authority
- JP
- Japan
- Prior art keywords
- pedestal
- collar
- stress
- base
- ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、高圧用半導体圧力変換器に関し、特にセンサ
チップを搭載した凸状台座をハウジング部に対し、外部
応力の影響を低減しつつ気密に固定するための構造に関
する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a high-pressure semiconductor pressure transducer, and in particular, the present invention relates to a high-pressure semiconductor pressure transducer, and in particular, the present invention relates to a high-pressure semiconductor pressure transducer, in which a convex pedestal on which a sensor chip is mounted is airtightly attached to a housing part while reducing the influence of external stress. Regarding the structure for fixing to.
〔従来の技術]
従来の高圧用半導体圧力変換器においてセンサチップを
搭載するガラス製等の台座の固定には、この台座の線膨
張率に近い全屈、例えばコバールからなるベース部材に
この台座を溶着などの手段で接着し、かつそのベース部
材をハウジング等に固定するなどの構造を用いている。[Prior Art] In order to fix a pedestal made of glass or the like on which a sensor chip is mounted in a conventional high-pressure semiconductor pressure transducer, the pedestal is fixed to a base member made of, for example, Kovar, which has a total bending coefficient close to that of the pedestal. A structure is used in which the base member is adhered by means such as welding and the base member is fixed to a housing or the like.
前記従来のガラス台座の固定手段は、周辺部の熱による
応力がセンサチップに加わらないようにするために、形
状が複雑であったり、作業性が悪かったりする。また逆
に形状を単純化するとセンサチップに応力が加わり温度
特性が悪くなってしまうという問題点があった。The conventional fixing means for the glass pedestal has a complicated shape and has poor workability in order to prevent stress due to heat in the periphery from being applied to the sensor chip. On the other hand, if the shape is simplified, stress is added to the sensor chip, resulting in poor temperature characteristics.
本発明は、センサチップを凸状台座の凸部上面に搭載し
、この台座のすそ部上面を、カラーを介してハウジング
部の凹部底面に対し、押さえると共に、このカラーの周
囲をハウジングの一部によって絞めるように構成し、か
つこの台座とハウジング部の凹部底面との間にOリング
を介在させる構成である。In the present invention, a sensor chip is mounted on the top surface of a convex part of a convex pedestal, and the top surface of the base of this pedestal is pressed against the bottom surface of a concave part of a housing part via a collar. The housing is configured to be tightened by the pedestal, and an O-ring is interposed between the base and the bottom surface of the recessed portion of the housing portion.
さらに本発明では台座のすそ部の側面周辺にクリアラン
スが形成される構成である。Further, in the present invention, a clearance is formed around the side surface of the base portion of the base.
本発明では台座が固定による応力及び熱応力を殆ど受け
ないために、センサチップに圧力媒体以外からの応力が
少なく高精度となり、絞め時に台座に衝撃力が加わらず
、割れることもない。In the present invention, since the pedestal receives almost no stress and thermal stress due to fixation, the sensor chip receives less stress from sources other than the pressure medium, resulting in high precision, and no impact force is applied to the pedestal during tightening, so it will not break.
以下、本発明を図に示す実施例について説明する。第1
図は本発明になる半導体圧力変換器の第1実施例となる
全体構成を示す断面図、第2図はその要部拡大断面図で
ある。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention shown in the drawings will be described. 1st
The figure is a cross-sectional view showing the overall configuration of the first embodiment of the semiconductor pressure transducer according to the present invention, and FIG. 2 is an enlarged cross-sectional view of the main part thereof.
第1.2図において、1は金属製のハウジング部で、被
測定圧力(例えば油圧)の圧力導入口IAが開孔された
断面円形の凹部IB、この凹部IBの端面上部に形成さ
れた絞め部1c及びねじ部IDが一体に形成されている
。2は凸状のガラス製(例えばパイレックスガラス(商
品名))の台座で、その凸部2B上に半導体感圧素子等
からなるセンサチップ3が陽極接合技術によって固着さ
れ、他方、台座2の底部にはリング状のゴム製0リング
4、及びリング状の軟質材、例えばテフロン(商品名)
製のバックアップリング5が挿入しである。それによっ
て油等の被測定媒体からの気密性を保持している。6は
筒状の金属製カラーで、凹部IB内に挿入された後、カ
ラー6の上部端面の周囲が、図の如く絞め部ICの変形
によって絞め固定されている。その際、絞め部ICから
の応力を軽減するため、絞め部ICの先端が台座2のす
そ部2Aの外周部より外側に位置し、すそ部2Aの直上
に位置しないように設定されている。また台座2のすそ
部2Aの外周部側面とカラー6との間には適当なりリア
ランス7が設定され、半径方向から台座2に加わる応力
を極力低減させている。なお、台座2の材質はガラスに
限らず、脆性材料一般も適用され得る。In Fig. 1.2, reference numeral 1 denotes a metal housing part, which includes a recess IB with a circular cross section in which a pressure inlet IA for the pressure to be measured (for example, oil pressure) is opened, and a constriction formed at the upper end of the recess IB. The portion 1c and the threaded portion ID are integrally formed. Reference numeral 2 denotes a convex glass pedestal (for example, Pyrex glass (trade name)), and a sensor chip 3 made of a semiconductor pressure-sensitive element or the like is fixed onto the convex portion 2B by anodic bonding technology. includes a ring-shaped rubber O-ring 4 and a ring-shaped soft material such as Teflon (trade name).
A backup ring 5 made by Manufacturer Co., Ltd. is inserted. This maintains airtightness from the medium to be measured such as oil. Reference numeral 6 denotes a cylindrical metal collar, and after being inserted into the recess IB, the periphery of the upper end surface of the collar 6 is tightened and fixed by deformation of the tightening portion IC as shown in the figure. At this time, in order to reduce the stress from the constriction part IC, the tip of the constriction part IC is located outside the outer circumferential part of the base part 2A of the base 2, and is set so as not to be located directly above the base part 2A. Further, an appropriate clearance 7 is set between the outer peripheral side surface of the base portion 2A of the base 2 and the collar 6 to reduce the stress applied to the base 2 from the radial direction as much as possible. Note that the material of the pedestal 2 is not limited to glass, and other brittle materials in general may be used.
次に、8は出力補償回路や増幅回路が搭載されるハイブ
リッドIC基板で、その中央部に穴が形成され台座2の
凸部2Bがこの基板上に露出され、センサチップ3上よ
りワイヤ9によって電気接続されている。Next, 8 is a hybrid IC board on which an output compensation circuit and an amplifier circuit are mounted, a hole is formed in the center of the board, and the convex part 2B of the pedestal 2 is exposed on this board. electrically connected.
10は素子保護用のシリコーンゲル、11は外部取出用
のリード線、12は電磁遮へい用のシールドプレート、
13は貫通型コンデンサ、14は第2の金属製ハウジン
グ部、15は第3のハウジング部、16はセンサチップ
3の上面に対し大気圧を導入するための大気開放口、1
7.18は封止用の樹脂である。10 is a silicone gel for protecting the element, 11 is a lead wire for taking it out to the outside, 12 is a shield plate for electromagnetic shielding,
13 is a feedthrough capacitor; 14 is a second metal housing portion; 15 is a third housing portion; 16 is an atmosphere opening port for introducing atmospheric pressure into the upper surface of the sensor chip 3;
7.18 is a resin for sealing.
上記構成によると、台座2を凸状として台座固定側から
の応力がセンサチップ3に伝わるのを弱めるようにし、
しかも台座2のすそ部2Aの上面よりカラー6を圧接す
ると共に、すそ部2Aとカラー6との間にクリアランス
7を設けておくことにより、絞めによる応力がすそ部2
Aに対し垂直方向のみ加わることとなり、半径方向の応
力を実質的に解消し、そこで上記凸状構造と相俟って外
部応力や熱応力がセンサチップ3に加わるのを極力低減
できる。しかも、絞めによる台座2の固定が可能なため
、量産性が高く、コスト低減ができる。According to the above configuration, the pedestal 2 is made convex to weaken transmission of stress from the pedestal fixed side to the sensor chip 3,
Moreover, by pressing the collar 6 against the upper surface of the base 2A of the base 2 and providing a clearance 7 between the base 2A and the collar 6, stress due to tightening is reduced from the base 2A.
Since the stress is applied only in the direction perpendicular to A, stress in the radial direction is substantially eliminated, and in combination with the convex structure, external stress and thermal stress applied to the sensor chip 3 can be reduced as much as possible. Moreover, since the pedestal 2 can be fixed by tightening, mass productivity is high and costs can be reduced.
また、カラー6の寸法、形状によって、0リング4のつ
ぶし代を規定できるようになり、0リング4による高い
シール性が得られる。しかも、絞め部ICの絞め時には
、絞め部ICの先端が台座2のすそ部2人の外周部より
外側に位置するように設定してあり、かつカラー6を介
するため、台座2に衝撃力が加わらず破損を防止できる
。Further, depending on the size and shape of the collar 6, the crushing margin of the O-ring 4 can be determined, and high sealing performance can be obtained by the O-ring 4. Furthermore, when the constriction part IC is tightened, the tip of the constriction part IC is set to be located outside the outer periphery of the two people at the base 2, and the impact force is applied to the base 2 through the collar 6. Damage can be prevented without adding damage.
次に第3図は本発明の第2の実施例を示すもので、ガラ
ス台座2とガラス製のキャップ20とを低融点ガラスで
接着することによって真空室21を設けた絶対圧型圧力
センサである。台座2はカラー6の圧接部6Aと0リン
グ4でもってはさみ込まれ、両者6A、4の応力中心が
ほぼ一致するように設定されている。しかもこのカラー
6はその周辺上端部をハウジング1の絞め部1Cにて校
め固定されている。測定圧力Pは圧力導入孔IAおよび
2Cを通して、台座2と陽極接合されたセンサチップ3
に伝わり、電気信号に変換される。Next, FIG. 3 shows a second embodiment of the present invention, which is an absolute pressure type pressure sensor in which a vacuum chamber 21 is provided by bonding a glass pedestal 2 and a glass cap 20 with low melting point glass. . The pedestal 2 is sandwiched between the pressure contact portion 6A of the collar 6 and the O-ring 4, and the stress centers of both 6A and 4 are set to substantially coincide. Moreover, this collar 6 is fixed at its peripheral upper end by the constriction part 1C of the housing 1. The measured pressure P is passed through the pressure introduction holes IA and 2C to the sensor chip 3 which is anodically bonded to the pedestal 2.
and is converted into an electrical signal.
この電気信号はボンディングワイヤ9,9B、導体9A
を介して、ハウジング1の上面部に固定されたハイブリ
、ラドIC基板8上の回路素子に伝えられ、温度補償等
を施され、かつ増幅処理される。This electrical signal is transmitted to the bonding wires 9, 9B and the conductor 9A.
The signal is transmitted to the circuit elements on the hybrid and RAD IC board 8 fixed to the upper surface of the housing 1, subjected to temperature compensation, etc., and subjected to amplification processing.
22は接着剤である。22 is an adhesive.
本実施例の特徴は、ガラス台座2の固定により発生する
応力がセンサチップ1に加わらないように構成したこと
である。そのため、0リング4の取付位置をカラー6の
圧接部6Aとほぼ対向する位置(つまり両者4,6Aの
応力中心がほぼ一致する位置)設定して両応力を相殺す
るようにし、Oリング4からの圧縮反力と圧接部6Aか
らの応力とによってガラス台座2に曲げ応力が発生する
のを抑制するものである。The feature of this embodiment is that it is configured so that stress generated by fixing the glass pedestal 2 is not applied to the sensor chip 1. Therefore, the mounting position of the O-ring 4 is set at a position almost opposite to the pressure contact part 6A of the collar 6 (that is, the position where the stress centers of both 4 and 6A almost coincide) to offset both stresses, and the O-ring 4 is This suppresses bending stress from being generated in the glass pedestal 2 due to the compressive reaction force and the stress from the pressure contact portion 6A.
次に、第4図は本発明の第3の実施例を示すものであり
、第1の実施例と異なる点は、カラー50の構造である
。Next, FIG. 4 shows a third embodiment of the present invention, which differs from the first embodiment in the structure of the collar 50.
本例ではカラー50は台座2のすそ部2への上面に対し
圧接する機能は第1の実施例と同様であるが、0リング
4のつぶし代を設定するにあたり、第1の実施例ではカ
ラー6の寸法によって行っているのに対し、本例では凹
部IBの深さ寸法によって行うことになり、前者の方が
製作上から加工精度を高められる。In this example, the function of the collar 50 to press against the upper surface of the base 2 of the pedestal 2 is the same as in the first embodiment. 6, whereas in this example, the depth dimension of the recessed portion IB is used, and the former method can improve the processing accuracy from the viewpoint of manufacturing.
本発明になる半導体圧力変換器においては、金属製カラ
ーを介して凸状の台座を絞め固定すると共に、この台座
はハウジング部の凹部に設けた0リングで下から押さえ
られているから、次のような効果が得られる。In the semiconductor pressure transducer according to the present invention, the convex pedestal is tightened and fixed via the metal collar, and this pedestal is held down from below by the O-ring provided in the recessed part of the housing. You can get an effect like this.
(1)鮫めによる台座の固定が可能なため、量産時のコ
スト低減につながる。(1) The pedestal can be fixed with a shark, leading to cost reduction during mass production.
(2)台座が固定による応力及び熱応力を殆ど受けない
ために、センサチップに圧力媒体以外からの応力が少な
く、高精度な製品となる。(2) Since the pedestal receives almost no stress or thermal stress due to fixation, the sensor chip receives less stress from sources other than the pressure medium, resulting in a highly accurate product.
(3)台座を金属などに接着する技術が不要なため、コ
ストが低い。(3) Cost is low because no technology is required to bond the pedestal to metal or the like.
(4)本発明におけるカラー形状は、0リングのつぶし
代を規定できるために、高いシール性が得られる。(4) Since the collar shape in the present invention allows the crushing margin of the O-ring to be defined, high sealing performance can be obtained.
(5)絞め時に台座に衝撃力が加わらず、割れることも
ない。(5) No impact force is applied to the pedestal when tightening, and it will not break.
第1図及び第2図は本発明になる半導体圧力変換器の第
1実施例の全体構成を示す断面図及び要部縦断面図、第
3図及び第4図は本発明の第2゜3の実施例を示す要部
縦断面図である。
1・・・ハウジング、2・・・→→一台座、3・・・セ
ンサチップ、4・・・0リング、5・・・バックアップ
リング。
6・・・金属製カラー、7・・・クリアランス。1 and 2 are a sectional view and a longitudinal sectional view of essential parts showing the overall configuration of a first embodiment of a semiconductor pressure transducer according to the present invention, and FIGS. FIG. 1...Housing, 2...→→One pedestal, 3...Sensor chip, 4...0 ring, 5...Backup ring. 6...Metal collar, 7...Clearance.
Claims (3)
属製ハウジング部、 この凹部内に収納され、前記導入口からの被測定圧力を
伝える圧力通路が形成された凸状の台座、前記凹部内の
底面と前記台座間に介在されるOリング、前記台座のす
そ部上面及び前記ハウジング部の少なくとも一面に当接
されるカラー、前記カラーの周囲の一部が前記ハウジン
グ部の一部を変形することによって■め固定され、それ
によって前記台座を前記カラーを介して前記ハウジング
の凹部内に固定するための■め部、及び前記台座の凸部
上において前記圧力通路の開口をふさぐ形態で固定され
、導入される被測定圧力に応じて電気信号を発生する半
導体センサチップを含むことを特徴とする半導体圧力変
換器。(1) A metal housing portion having a recessed portion with an inlet for the pressure to be measured; a convex pedestal housed in the recessed portion and having a pressure passage for transmitting the pressure to be measured from the inlet; an O-ring interposed between the bottom surface of the recess and the pedestal; a collar that abuts an upper surface of the base of the pedestal and at least one surface of the housing portion; a portion of the periphery of the collar is part of the housing portion; A shape in which the opening of the pressure passage is closed on a convex portion of the base, and a convex portion for fixing the pedestal in the recessed portion of the housing through the collar; What is claimed is: 1. A semiconductor pressure transducer comprising: a semiconductor sensor chip which is fixed to a semiconductor sensor chip and which generates an electrical signal in response to an introduced pressure to be measured;
成されている特許請求の範囲第1項記載の半導体圧力変
換器。(2) The semiconductor pressure transducer according to claim 1, wherein a clearance is formed around the side surface of the base of the base.
部と前記Oリングとが前記台座を介して対向配置されて
いる特許請求の範囲第1項記載の半導体圧力変換器。(3) The semiconductor pressure transducer according to claim 1, wherein the contact portion of the collar against the upper surface of the base of the pedestal and the O-ring are arranged to face each other with the pedestal interposed therebetween.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26698785 | 1985-11-26 | ||
JP60-266987 | 1985-11-26 | ||
JP61-207206 | 1986-09-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63228038A true JPS63228038A (en) | 1988-09-22 |
Family
ID=17438484
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP28012286A Pending JPS63228038A (en) | 1985-11-26 | 1986-11-24 | Semiconductor pressure transducer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63228038A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5925826A (en) * | 1997-07-23 | 1999-07-20 | Mitsubishi Denki Kabushiki Kaisha | Integrated pressure sensor unit and solenoid valve unit |
JP2004245631A (en) * | 2003-02-12 | 2004-09-02 | Denso Corp | Pressure sensor apparatus |
US7627943B2 (en) | 2004-03-29 | 2009-12-08 | Nagano Keiki Co., Ltd. | Method of manufacturing a pressure sensor |
US10451512B2 (en) | 2017-03-27 | 2019-10-22 | Nidec Tosok Corporation | Oil pressure sensor attachment structure |
US10591378B2 (en) * | 2016-08-03 | 2020-03-17 | Nidec Tosok Corporation | Pressure sensor attachment structure |
US10648878B2 (en) | 2017-03-30 | 2020-05-12 | Nidec Tosok Corporation | Oil pressure sensor attachment structure |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58731A (en) * | 1981-06-25 | 1983-01-05 | Matsushita Electric Ind Co Ltd | Electrostatic capacity type pressure sensor |
JPS58102124A (en) * | 1981-12-15 | 1983-06-17 | Toshiba Corp | Semiconductor pressure sensor |
JPS5979825A (en) * | 1982-10-29 | 1984-05-09 | Matsushita Electric Ind Co Ltd | Pressure sensor |
-
1986
- 1986-11-24 JP JP28012286A patent/JPS63228038A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58731A (en) * | 1981-06-25 | 1983-01-05 | Matsushita Electric Ind Co Ltd | Electrostatic capacity type pressure sensor |
JPS58102124A (en) * | 1981-12-15 | 1983-06-17 | Toshiba Corp | Semiconductor pressure sensor |
JPS5979825A (en) * | 1982-10-29 | 1984-05-09 | Matsushita Electric Ind Co Ltd | Pressure sensor |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5925826A (en) * | 1997-07-23 | 1999-07-20 | Mitsubishi Denki Kabushiki Kaisha | Integrated pressure sensor unit and solenoid valve unit |
JP2004245631A (en) * | 2003-02-12 | 2004-09-02 | Denso Corp | Pressure sensor apparatus |
US7627943B2 (en) | 2004-03-29 | 2009-12-08 | Nagano Keiki Co., Ltd. | Method of manufacturing a pressure sensor |
US10591378B2 (en) * | 2016-08-03 | 2020-03-17 | Nidec Tosok Corporation | Pressure sensor attachment structure |
US10451512B2 (en) | 2017-03-27 | 2019-10-22 | Nidec Tosok Corporation | Oil pressure sensor attachment structure |
US10648878B2 (en) | 2017-03-30 | 2020-05-12 | Nidec Tosok Corporation | Oil pressure sensor attachment structure |
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