WO2002077598A1

WO2002077598A1 - Semiconductor pressure sensor and regulation method therefor

Info

Publication number: WO2002077598A1
Application number: PCT/JP2002/002855
Authority: WO
Inventors: Atsushi Miyazaki; Hitoshi Ishikawa; Kazunori Saito; Kimihiro Ashino; Katsumichi Ueyanagi
Original assignee: Hitachi, Ltd.; Fuji Electric Co., Ltd.
Priority date: 2001-03-23
Filing date: 2002-03-25
Publication date: 2002-10-03
Also published as: JP2002286566A; JP4323107B2

Abstract

A semiconductor pressure sensor capable of regulating sensor characteristics while being built in a gauge case, and a regulation method therefor, the sensor comprising a semiconductor chip (1) having a pressure conversion circuit and a characteristic compensation circuit, a resin case (6) storing the chip (1), and a lead terminal (7) led to the outside from the resin case and formed integrally with the resin case. The resin case (6) comprises planar air-tight sealing surfaces (6C1, 6C2) formed on the upside and downside of the resin case, a reinforcing material (8) disposed inside of the sealing surfaces and formed integrally with the resin case so as to expose at part thereof from the case, and grooves (13, 14) provided between the sealing surfaces and the reinforcing material, the semiconductor chip (1) being disposed on the reinforcing material.

Description

TECHNICAL FIELD The present invention relates to a semiconductor pressure sensor and a method of adjusting the same, and more particularly, to a semiconductor pressure sensor having a case structure suitable for characteristic adjustment and a method of adjusting the same. BACKGROUND ART A conventional semiconductor pressure sensor has, for example, the following configuration, as described in Japanese Patent Application Laid-Open No. 57-79419. A semiconductor chip having a pressure detection circuit and a glass base are joined to form a chip chip. Next, after bonding this chip paste to the glass base, it is adhered to the lead terminal integrated resin case, the chip and the lead terminal are connected by wires, and the resin cover is adhered to the resin case to form a gauge case paste. I do. Furthermore, a resin case forming a gauge case is bonded to a resin base having a pressure introducing pipe, and a thick film hybrid circuit board having a characteristic adjustment circuit is bonded to the resin base. After connecting the lead terminals and the thick-film hybrid circuit board to the connector lead terminals with wires, apply pressure to the outer case to adjust the resistance of the thick-film hybrid circuit board to a predetermined value, and adjust the sensor characteristics.

(0-span adjustment, sensitivity adjustment, temperature characteristic adjustment, etc.). After adjusting the characteristics, a resin cover is bonded to the external case to form a semiconductor pressure sensor. DISCLOSURE OF THE INVENTION However, in the semiconductor pressure sensor described in Japanese Unexamined Patent Publication No. 57-79419, the characteristic adjustment of the sensor is performed while the gauge case is fixed to the outer case. Because the outer case is large and the heat capacity is large, 'There was a problem that the apparatus became large when measuring the temperature characteristics of the laser. In addition, when a product with poor characteristic adjustment occurs, it is necessary to dispose the entire outer case, which has a problem of great economic loss.

Therefore, the present inventors have considered performing characteristic adjustment with the gauge case kumi alone, which is in a state before the outer case is attached, but holding the resin case of the gage case kumi with a jig from above and below and applying a holding force. When pressure is applied to perform the adjustment work, the pressing force is applied directly to the periphery of the glass base, which causes cracks in the glass base and stress on the semiconductor chip for detecting pressure, resulting in accurate characteristics. It turned out that there was a problem that adjustment could not be performed.

An object of the present invention is to provide a semiconductor pressure sensor capable of adjusting sensor characteristics in a state of a gauge case and a method of adjusting the semiconductor pressure sensor.

In order to achieve the above object, the present invention provides a semiconductor chip for converting a change in pressure of a medium to be measured into an electric signal, a resin case for housing the semiconductor chip, and drawn out of the case from the resin case. And a connecting member for electrically connecting the semiconductor chip and the lead terminal, wherein the resin case is formed above and below the resin case. A flat sealing surface, a reinforcing member disposed inside the sealing surface, and integrally formed so as to partially expose the resin case, between the sealing surface and the reinforcing member. And a semiconductor chip is provided on the reinforcing member. With this configuration, it is possible to adjust the sensor characteristics in the state of the gauge case crack.

In order to achieve the above object, the present invention provides a semiconductor chip having a pressure conversion circuit and a characteristic compensation circuit, a resin case for housing the semiconductor chip, a resin case drawn out of the case from the resin case, and a resin case. A method of adjusting a characteristic of a semiconductor pressure sensor having a lead terminal integrally formed with a case and a connection member for electrically connecting the semiconductor chip and the lead terminal, the method comprising: A planar sealing surface formed above and below the resin case; a reinforcing member disposed inside the sealing surface and integrally formed so as to partially expose the resin case; With a sealing surface and a groove provided between the reinforcing material, The resin case in the portion where the sealing surface is provided is fixed from above and below, and pressure is applied to the semiconductor chip to adjust the characteristics of the semiconductor chip. With this configuration, the sensor characteristics can be adjusted in the state of the gauge case crack. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing a configuration of a semiconductor relative pressure sensor according to an embodiment of the present invention in a gage case in a depressed state.

FIG. 2 is a plan view of FIG.

FIG. 3 is a cross-sectional view of a main part showing a configuration of a characteristic adjusting device using a gauge case comb of a semiconductor relative pressure sensor according to an embodiment of the present invention.

FIG. 4 is a cross-sectional view showing another configuration of the semiconductor relative pressure sensor according to the embodiment of the present invention in a gauge case in a depressed state.

FIG. 5 is a sectional view showing a configuration of a semiconductor relative pressure sensor according to one embodiment of the present invention.

FIG. 6 is a cross-sectional view showing the configuration of the gauge absolute state of the semiconductor absolute pressure sensor according to the embodiment of the present invention.

FIG. 7 is a sectional view showing a configuration of a semiconductor absolute pressure sensor according to one embodiment of the present invention.

FIG. 8 is a perspective view showing another configuration of the semiconductor sensor according to one embodiment of the present invention. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, a configuration of a semiconductor pressure sensor according to an embodiment of the present invention will be described with reference to FIGS.

First, a configuration of a gauge case connector of a semiconductor relative pressure sensor according to an embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a cross-sectional view showing a configuration of a semiconductor relative pressure sensor according to an embodiment of the present invention in a gauge case in a state of being in a cracked state. FIG. 2 is a plan view of FIG.

The semiconductor chip 1 is made of silicon. The semiconductor chip 1 is formed in a concave shape by, for example, etching the lower surface of a central portion, and a thin diaphragm 2 is formed in the central portion. A pressure detection circuit (not shown) is formed integrally with the diaphragm 2 on the upper surface of the semiconductor chip 1 by a semiconductor process. The pressure detection circuit is composed of four diffusion resistors formed on the diaphragm 2, and is configured by wiring to a bridge with an aluminum conductor. A characteristic compensation circuit and a protection circuit (not shown) are integrally formed on the upper surface of the semiconductor chip 1 in a peripheral portion other than the diaphragm by a semiconductor process cell. The characteristic compensation circuit is a digital-analog hybrid circuit that adjusts the relationship between pressure and output to a predetermined transfer function. The digital / analog hybrid circuit is mainly composed of a digital section having an EPR0M for storing and holding the characteristic adjustment signal, and an analog section for amplifying the signal. The characteristic adjustment signal is an adjustment value such as a coefficient value for adjusting each of these characteristics obtained during zero-span adjustment, sensitivity adjustment, and temperature characteristic adjustment. The protection circuit is a circuit that protects input / output signals provided at input / output stages connected to the outside. The pressure detection circuit, the characteristic adjustment circuit, and the protection circuit are each electrically connected with aluminum conductors.

The semiconductor chip 1 is joined to the glass table 3 by aanodic bonding or the like. A semiconductor chip 1 and a glass table 3 constitute a chip chip. The glass stand 3 has a through hole 4 at the center. The through hole 4 serves as a pressure inlet for introducing pressure to the lower surface of the diaphragm 2 of the semiconductor chip 1. The linear expansion coefficient of the glass table 3 is substantially equal to the linear expansion coefficient of the semiconductor chip 1.

The resin case 6 is formed by insert molding the lead terminal 7 and the reinforcing plate 8. The resin case 6 is made of a thermoplastic resin or a thermosetting resin. The lead terminal 7 is made of phosphor bronze. The reinforcing plate 8 has a circular shape and is made of 42 alloy. In the center of the reinforcing plate 8, a through hole 9 is formed. The through hole 9 serves as a pressure inlet for introducing pressure to the lower surface of the diaphragm 2 of the semiconductor chip 1. In the center of the resin case 6 as well, a through hole 15 serving as a pressure introduction port for introducing pressure to the lower surface of the diaphragm 2 of the semiconductor chip 1 is formed. Insert molded to resin case 6 The upper center surface of the reinforcing plate 8 is exposed from the resin case 6. As shown in FIG. 2, the lead terminal 7 is installed so as to surround the vicinity of the disposition portion of the chip 5 and is drawn out through a resin case.

The chip chip composed of the semiconductor chip 1 and the glass base 3 is bonded and fixed to the reinforcing plate 8 exposed at the center of the resin case 6 using a silicone adhesive 16. The chip electrodes of the semiconductor chip 1 are connected to the lead terminals 7 by wire bonding with aluminum wires 17.

Grooves 13 and 14 are formed in the resin case 6. The grooves 13 and 14 are ring-shaped as shown in FIG. The radii of the grooves 13 and 14 are equal to each other, and are provided at the same upper and lower positions with respect to the surface on which the lead terminals 7 are formed. The portion of the outer diameter of the resin case 6 where the lead terminal 7 is provided has a square planar shape as shown in FIG. As shown in FIG. 2, the portion of the outer diameter of the resin case 6 where the groove 13 is provided has a circular planar shape as shown in FIG. Of the outer diameter of the resin case 6, the portion where the groove 14 is provided has a circular planar shape, like the portion corresponding to the groove 13. The resin case 6 has a rigid portion 6 A on the inner peripheral side of the grooves 13 and 14, a ring-shaped deformed portion 6 B 1 on the outer peripheral side of the groove 13, and a ring-shaped deformed portion on the outer peripheral side of the groove 14. 6 B2. The reinforcing plate 8 is embedded in the rigid portion 6A by insert molding, further increasing the rigidity of the rigid portion 6A. The upper surface of the ring-shaped deformed portion 6B1 is flat and serves as a ring-shaped convex hermetic sealing surface 6C1. Further, the lower surface of the ring-shaped deformed portion 6B2 is flat and serves as a ring-shaped convex hermetic sealing surface 6C2. The convex hermetic sealing surface 6C1 and the convex hermetic sealing surface 6C2 are substantially vertically symmetric.

The height from the convex hermetic sealing surface 6C2 to the bottom of the groove 14 is HI, and the height from the convex hermetic sealing surface 6C2 to the top surface of the reinforcing plate 8 (the mounting surface of the glass base 3). Is H 2, the depth of the groove 14 is set so that H 1 ≥H 2. From another perspective, the height from the convex hermetic sealing surface 6C1 to the bottom of the groove 14 is H3, and the height from the convex hermetic sealing surface 6C1 to the top surface of the reinforcing plate 8 (glass The height of the groove 14 is set so that the relationship of H4≥H3 is satisfied, where H4 is the height up to the mounting surface of the base 3). In the example shown, H 1 = H 2 and H 4 = H 3, but H 1> H 2, H 4> H 3 may be satisfied. That is, when the groove 14 is based on the opening side (the side of the convex hermetic sealing surface 6C2), its bottom surface is located deeper than the upper surface of the reinforcing plate 8 (the mounting surface of the glass base 3). Is formed up to. Therefore, the force F1 was uniformly applied from the upper surface of the ring-shaped convex hermetic sealing surface 6C1, and the force F2 was uniformly applied from the lower surface of the ring-shaped convex hermetic sealing surface 6C2. In this case, even if the deformed portions 6 B 1 and 6 B 2 are deformed due to the formation of the grooves 13 and 14, the forces F l and F 2 do not act on the rigid portion 6 A . Also, even if some stress acts on the rigid portion 6A, the reinforcing plate 8 provided on the rigid portion 6A is made of a metal which is stronger than the resin case 6, so that the force F l. The stress caused by 2 does not reach the glass table 3 and the semiconductor chip 1 mounted on the reinforcing plate 8.

Further, the upper surface of the chip comb composed of the semiconductor chip 1 and the glass base 3 mounted on the reinforcing plate 8 inside the resin case 6 is filled and cured with a fluorosilicone-based or fluorine-based coat gel 18. The coat gel 18 transmits pressure to the semiconductor chip 1 and prevents the corrosive liquid or gas from coming into contact with the semiconductor chip 1.

The recesses 44 are recesses for snap-fit fixing (snap-fit fitting portions), and this point will be described later with reference to FIG.

As described above, the gauge casing 10 is constituted by the chip casing composed of the semiconductor chip 1 and the glass base 3 and the resin case 6 in which the reinforcing plate 8 and the lead terminal 7 are integrally formed.

Next, a method of adjusting the characteristics of the semiconductor relative pressure sensor according to the present embodiment using the gauge casing will be described with reference to FIG.

The characteristic adjustment jig 27 includes a fixed jig 22 and a movable jig 26. The fixing jig 22 includes a ring 20 and a pressure introducing hole 21 as main parts. The movable jig 26 is mainly composed of the O-ring 23, the pressure introducing hole 24, and the probe 25. .

The gauge cage 10 is attached to the fixing jig 2 2, the lower hermetic sealing surface 1 2 and the O-ring 2 The gauge case is mounted so that the O-ring 23 of the movable jig 26 and the upper hermetic sealing surface 11 match, and the lead terminal 7 and the probe 25 match respectively. Set as shown in Fig. 3 so that Kumi 10 is sandwiched between the fixed jig 22 and the movable jig 26.

In the state shown in FIG. 3, for example, by applying the atmospheric pressure PA to the fixed jig 22 side and applying the measured pressure PM to the movable jig 26 side, the semiconductor chip 1 is moved relative to the atmospheric pressure. Pressure (PA-PM) is applied. When the diaphragm 2 of the semiconductor chip 1 is deformed by the relative pressure, the diffusion resistance value changes due to the piezoresistance effect of silicon, which can be converted into an output signal as a change in the bridge voltage of the pressure detection circuit.

While applying a predetermined temperature and pressure to the characteristic adjustment jig 27 and the gauge case 10 so that the sensor output becomes a predetermined value, an EPR OM included in the chip 1 via a probe 25 from an adjustment device (not shown) via a probe 25. By storing and holding the adjustment value at the time, the characteristic adjustment work of the sensor is performed.

Here, when the gauge case 10 is sandwiched between the fixed jig 22 and the movable jig 26, stress is generated on the upper and lower hermetic sealing surfaces 1 1 and 1 2 of the resin case 6, but the reinforcing plate 8 and the upper and lower air The concave grooves 13 and 14 arranged between the tightly sealed surfaces 1 1 and 1 2 absorb the deformation at the deformed portions 6 B 1 and 6 B 2 of the resin case 6 and the rigidity of the metal reinforcing plate 8. As a result, no distortion is transmitted to the glass table 3 disposed on the reinforcing plate 8 and the semiconductor chip 1 fixed thereon, and the adjustment operation can be performed in a stable state. Therefore, since the characteristic adjustment work can be performed in the state of the gage case 10, the adjustment device can be downsized even when the temperature characteristic of the sensor is measured by exposing it to a high or low temperature state. In addition, even if a defective product occurs, it is only necessary to discard the gauge case 10 and the economic loss can be reduced.

In addition, by employing the resin case structure according to the present embodiment, the height H5 of the glass base 3 can be made lower than that of the conventional case. In other words, the conventional glass table is used to reduce the external force transmitted to the chip (for example, external force and stress from a resin case, an adjustment jig, etc.). External force is reduced. In contrast, in this embodiment, the external force is absorbed by the structure of the resin case 6 (having the grooves 13 and 14 and using the reinforcing plate 8), The height of the glass table 3 can be reduced because it is not as large as the glass table 3. As a result, the size and cost of the semiconductor pressure sensor can be reduced. Incidentally, the height of the conventional glass table was about 2.5 mm, but can be reduced to 0.6 mm in the present embodiment.

Next, another configuration of the gauge case of the semiconductor relative pressure sensor according to the embodiment of the present invention will be described with reference to FIG.

FIG. 4 is a cross-sectional view showing another configuration of the semiconductor relative pressure sensor according to the embodiment of the present invention in a gauge case in a depressed state. The same reference numerals as those in FIG. 1 indicate the same parts.

In the gauge case claw 10 ′ of this example, the lower surface hermetic sealing surface 6 B 2 is disposed above the lower surface of the reinforcing plate 8. That is, the height H I ′ from the convex hermetic sealing surface 6 C 2 ′ to the bottom surface of the groove 14 ′ is smaller than that shown in FIG. However, as described above, the height H3 from the convex hermetic sealing surface 6C1 to the bottom surface of the groove 14 'and the upper surface of the reinforcing plate 8 from the convex hermetic sealing surface 6C1 (the The depth of the groove 14 'is set so that there is a relationship of H4≥H3 between the height H4 to the mounting surface). That is, when the groove 14 ′ is based on the opening side (the side of the convex hermetic sealing surface 6 C 2), its bottom surface is deeper than the upper surface of the reinforcing plate 8 (the mounting surface of the glass base 3). It is formed up to the position. Therefore, when a uniform force is applied from the upper surface of the ring-shaped convex hermetic sealing surface 6C1 and the lower surface of the ring-shaped convex hermetic sealing surface 6C2, grooves 13 and 14 'are formed. As a result, even if the deformed portions 6B1 and 6B2 'are deformed, the force does not act on the rigid portion 6A. Also, even if some stress acts on the rigid portion 6A, the reinforcing plate 8 provided on the rigid portion 6A is made of a metal that is stronger than the resin case 6, so that the stress is reduced. It is less than the glass table 3 and the semiconductor chip 1 mounted on the top 8. As described above, by reducing the height of the deformed portion 6B2 ', the coast of the resin case 6 can be eliminated, and the gauge case can be made more compact.

Next, the configuration of the semiconductor relative pressure sensor according to one embodiment of the present invention will be described with reference to FIG. FIG. 5 is a sectional view showing a configuration of a semiconductor relative pressure sensor according to one embodiment of the present invention. The same reference numerals as those in FIG. 1 indicate the same parts.

The relative pressure sensor 40 of this example is a stand-alone type. Place the relative pressure gauge case 10 'inside the outer case 32 and fix it. The exterior case is made of, for example, PBT. The gauge case 10 'is mounted inside the outer case 32 with the upside down of the gauge case 10' shown in FIG. The convex hermetic sealing surface 11 of the relative pressure gauge case 10 ′ shown in FIG. 4 is fixed to the concave groove of the outer case 32 with an adhesive 33. Connect lead terminal 7 and connector terminal 34 with aluminum wire 35. Silicone gel 36 is filled so as to cover lead terminals 7 and connector terminals 34. A cover 38 having an air introduction hole 37 is attached to the outer case 32 with an adhesive 39.

The measured pressure introduced from the pressure introducing pipe 31 of the outer case 3 2 is received on the upper surface of the chip of the semiconductor sensor, and the atmospheric pressure is received on the lower surface of the chip from the air introducing hole 37 of the cover 38. Atmospheric pressure-based relative pressure can be measured.

At the joint between the outer case 3 and the gauge case crack 10, residual strain occurs during bonding and thermal strain occurs when both cases are made of different materials. Sensor characteristics were adjusted in the condition of gauge case 10 because concave grooves 13 and 14 and reinforcing plate 8 arranged between 1 and reinforcing plate 8 absorb the above-mentioned distortion and do not affect chip 5. After that, even if it is incorporated into the sensor black 40, the characteristics do not change.

In this example, the gauge case 10 ′ shown in FIG. 4 is used, but the same effect can be obtained by mounting the gauge case 10 shown in FIG. 1 in the same manner. Also, since the gauge case 10 shown in FIG. 1 has fitting grooves on the upper and lower surfaces, it is arranged upside down so that the measured pressure can be applied to the lower surface of the chip and the atmospheric pressure can be applied to the upper surface. Also has a good structure.

Next, the configuration of the semiconductor absolute pressure sensor according to one embodiment of the present invention will be described with reference to FIGS.

FIG. 6 is a cross-sectional view showing the configuration of the gauge absolute state of the semiconductor absolute pressure sensor according to the embodiment of the present invention. FIG. 7 shows a semiconductor absolute pressure according to one embodiment of the present invention. It is sectional drawing which shows the structure of a sensor. The same reference numerals as those in FIGS. 1 and 5 indicate the same parts.

As shown in Fig. 6, the difference between the example shown in Fig. 1 and the example 1 shown in Fig. 1 is that the through hole 4 is not provided in the glass base 3A and the semiconductor This is a point that a vacuum chamber 30 is provided in a portion between the lower surface of the diaphragm 2 of the chip 1 and the upper surface of the glass base 3A. Thus, by applying the pressure to be measured PM from the upper surface of the semiconductor chip 1, a gauge case smear 1 OA based on the absolute pressure is obtained. Next, the configuration of the stand-alone absolute pressure sensor kumi 41 will be described with reference to FIG. The absolute pressure gauge case 1OA shown in FIG. 6 is mounted on the outer case 32 similarly to the configuration shown in FIG. The cover 42 has no air introduction hole, and is attached to the mounting case 32. The measured pressure on the upper surface of the chip is received via the pressure introducing pipe 31 of the outer case 42, and the absolute pressure can be measured based on the vacuum chamber provided on the lower surface of the chip.

As described above, other components can be shared between the absolute pressure sensor and the relative pressure sensor simply by changing the glass table 3, 3 A.

Next, another configuration of the semiconductor sensor according to the embodiment of the present invention will be described with reference to FIG.

FIG. 8 is a perspective view showing another configuration of the semiconductor sensor according to one embodiment of the present invention. The same reference numerals as those in FIGS. 1 and 2 indicate the same parts.

The semiconductor sensor shown in FIG. 8 is an on-board type atmospheric pressure sensor 43. In the part where the plane shape of the center part of the gauge case for relative pressure 10 is square (the outer peripheral part of the rigid part 6A), four recesses (snap fit fitting parts) for fixing the snap fit are formed in four places. (See recesses 44 in FIG. 2). The recesses 44 are provided on two surfaces different from the two surfaces on which the lead terminals 7 are arranged, of the four side surfaces of the rigid body portion 6A having a square planar shape. The cover 47 is fitted into the recess 44 by using the snap-fitting pawl 45 formed on the cover 47. The cover 47 is provided with an air introduction hole 46. The plane shape of the rigid body 6A is not limited to a square, but may be a rectangle.

After fitting the cover 4 7 to the gauge case cover 10, print the lead terminal 7 Insert into the board. The lead terminals 7 are pre-dipped with solder, and are joined to a printed circuit board using the solder.

As described above, according to the present embodiment, it is possible to eliminate distortion of the case that occurs when adjusting the characteristics of the gauge case and after assembling the outer case, so that a highly accurate and highly reliable pressure sensor can be provided.

In addition, since the height of the glass table holding the chips can be reduced, the size and cost of the gauge case can be reduced.

In addition, since the on-board gauge case stand for relative pressure and absolute pressure stand-alone can be shared, the production line for gauge case paste can be shared, and a mixed flow line can be constructed. The cost can be reduced and cost can be reduced. In each of the above examples, the basic concept is included in the contents set forth in the claims, and individual components other than these components (for example, the connection between the gauge case and the external case is welded) ) Is not limited at all. INDUSTRIAL APPLICABILITY According to the present invention, it is possible to adjust the sensor characteristics in the state of the gauge case.

Claims

The scope of the claims

1. A semiconductor chip (1) that converts the pressure change of the medium to be measured into an electric signal, a resin case (6) that houses the semiconductor chip, and is drawn out of the resin case and formed integrally with the resin case. A semiconductor pressure sensor having a lead terminal (7) provided and a connecting member (17) for electrically connecting the semiconductor chip and the lead terminal.

The above resin case (6)

Flat sealing surfaces (6C1, 6C2) formed above and below this resin case,

A reinforcing member (8) which is arranged inside the sealing surface and is integrally formed so as to be partially exposed from the resin case,

A groove (13, 14) provided between the sealing surface and the reinforcing material,

A semiconductor pressure sensor, wherein a semiconductor chip is disposed on the reinforcing member.

2. The semiconductor pressure sensor according to claim 1,

An end surface of the sealing surface of the resin case has a ring shape, a side surface is formed in a cylindrical shape, and the groove portion is formed in a ring shape inside the cylindrical portion,

A semiconductor pressure sensor, wherein the reinforcing member comprises a metal disk.

3. The semiconductor pressure sensor according to claim 1,

A semiconductor pressure sensor comprising: a snap-fit engagement portion for fixing a lid provided on a flat surface on a side surface of the resin case and covering an opening on a side of the resin case where a chip is stored.

4. A semiconductor chip (1) having a pressure conversion circuit and a characteristic compensation circuit, a resin case (6) for housing the semiconductor chip, and being pulled out of the case from the resin case and integrally formed with the resin case. A method of adjusting characteristics of a semiconductor pressure sensor having a lead terminal (7) and a connection member (17) for electrically connecting the semiconductor chip and the lead terminal. The above resin case (6)

Flat sealing surfaces (6C1, 6C2) formed above and below this resin case,

A reinforcing member (8) which is arranged inside the sealing surface and is integrally formed so as to be partially exposed from the resin case;

A groove portion (13, 14) provided between the sealing surface and the reinforcing material,

A method for adjusting a semiconductor pressure sensor, comprising: fixing a resin case in a portion provided with the sealing surface from above and below, and applying pressure to the semiconductor chip to adjust characteristics of the semiconductor chip. .

5. The method for adjusting a semiconductor pressure sensor according to claim 4,

A movable jig that presses the sealing surface on the upper portion of the resin case from above via a sealing material to hermetically seal and applies a predetermined pressure to the upper surface of the chip;

A fixing jig which receives the pressing force on the lower sealing surface of the resin case,

A semiconductor pressure sensor characterized in that a predetermined pressure and temperature are applied to the semiconductor sensor to adjust the sensor characteristics using an adjustment device including a movable probe that applies an electric signal to a lead terminal on a side of the case. Adjustment method.

6. The method for adjusting a semiconductor pressure sensor according to claim 4,

A fixing jig which presses a sealing surface at a lower portion of the resin case from below through a sealing material to hermetically seal the same and applies a predetermined pressure to a lower surface of the chip;