JPS63128801A - Filter - Google Patents

Abstract

PURPOSE:To attain small size and thin profile by laminating plural conductors, dielectric substances and resonators. CONSTITUTION:A high frequency signal inputted from an input/output pin 21 is sent to a transmission line 23 formed to a conductor layer of a dielectric multi-layer substrate 20, given to a 1st stage 1/2 wavelength resonator 25 and coupled with 1/2 wavelength resonators 26, 27 and an output transmission line 24 via the similar lamination constitution. A desired frequency characteristic is obtained by adjusting the coupling between the transmission line and the resonator and between the resonators through the adjustment of the overlapped area of the open end of the 1/2 wavelength line and the constitution of the filter is made small in size and thin in profile.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an F-wave device widely used as a basic component of various communication devices, TV broadcast receivers, and the like.

BACKGROUND OF THE INVENTION Recently, as various communication and broadcasting systems have become widespread, F-wave devices have been widely used as their basic components. As this filter, for example, Japanese Patent Application Laid-Open No. 60-24800
A configuration using a coaxial dielectric resonator described in Publication No. 4 is known. A conventional filter will be explained below with reference to FIG.

In Figure 7, 1.20 input/output connectors, 3 to 5 are dielectric coaxial resonators whose inner and outer peripheries and one end surface are coated with conductors, 6 to 8 are tuning screws for adjusting the resonance frequency, and 9 is an input/output connector. A coupling substrate for realizing coupling between resonators; 10 is a conductor pattern formed on the coupling substrate 9; 11 to 13 are resonators 3;
A metal fitting for connecting the inner conductor of ~5 and the conductor pattern 10, 14
is the casing.

The operation of the above configuration will be explained below. . The high frequency signal input from input connector 1 is
A desired band characteristic is obtained through the input/output and coupling between the resonators determined by the spacing between the dielectric coaxial resonators 3 to 5 and the conductor pattern 10 on the coupling board 9, and is output from the output connector 2.

Problems to be Solved by the Invention When downsizing a filter having the above configuration, an important factor is downsizing the dielectric coaxial resonator and the coupling substrate.

Dielectric coaxial resonators are made smaller because their manufacturing method is pressure firing, so the inner diameter is about 1 m long, and the outer diameter is about 3 m long.
~4■ is the limit.

Furthermore, when the bonding substrate is miniaturized, it becomes difficult to obtain a high degree of bonding. Even if this is achieved, the spacing between the conductor patterns will become narrower and the withstand voltage will drop. As described above, there is a limit to the miniaturization of a filter with a conventional configuration, and there are problems in realizing a thin F-wave filter.

The present invention solves the above-mentioned problems of the prior art, and aims to reduce the size and thickness of an F-wave device by 30%.

Means for Solving the Problems The present invention proposes a method in which a plurality of conductors and dielectrics are alternately J/cI [conductor layers forming resonators or resonators on the conductor layer of a dielectric multilayer substrate bonded together]. By providing another conductor layer in between, an F-wave device is constructed and the above object is achieved.

Function The present invention realizes two resonators, input/output coupling between the resonators, and coupling between the resonators, and operates as an F-wave device, and is used as a small P-wave device, especially a thin P-wave device, with the above configuration. It was designed to realize the following.

EXAMPLE A first example of the present invention will be described below with reference to the drawings.

FIG. 1(4) shows a plane view of the F-wave device in the first embodiment of the present invention. FIG. 1(B) is a cross-sectional view of FIG. 1(N) taken from the dashed line a-j.
, (B), 20 is a dielectric multilayer substrate, 21.22
2 is an input/output pin for input/output signals, 23.24 is a line for input/output signal transmission formed on the conductor of the dielectric multilayer board 20 connected to the input/output pins 21.22 by soldering, etc.;
5 to 27 are half wavelength resonators formed on the conductor of the dielectric multilayer substrate 20, and 28 are through holes connecting the upper and lower conductor layers of the dielectric multilayer substrate 20.

The operation of the above configuration will be explained below.

First, a high frequency signal inputted from the input/output pin 21 is transmitted to the transmission line 23 formed on the conductor layer of the dielectric multilayer substrate 20 . transmission#! [23] The high frequency signal transmitted to 23 passes through the dielectric layer of the dielectric multilayer substrate 20 to the first stage resonator 25, and is further transmitted to the second stage resonator 26 through a similar mechanism.
．． The third stage resonator 27 is coupled to the output transmission line 24. The amount of coupling between a transmission line and a resonator, and between a resonator and a resonator, which is necessary to obtain a desired band characteristic, is adjusted by the overlapping area of the open end portions of the half-wavelength lines.

The high frequency signal from the output transmission line 24 is taken out from the input/output pin 22, and an F wave device having desired band characteristics can be realized. The upper and lower conductor layers of the dielectric multilayer substrate 20 have through holes 2
8 and serves as a ground layer. Therefore, high frequency leakage to the outside is suppressed, and it functions similarly to an external casing used for shielding.

As is clear from the above description, according to this embodiment, the input/output transmission lines 23, 24 and the resonators 25 to 27 are formed in the conductor layer of the dielectric multilayer substrate 20, and the F wave having the desired band characteristics is formed. By connecting the upper and lower conductor layers of the dielectric multilayer board with through holes 28 and using them as a ground layer, we have realized a small filter that does not require an external casing, especially a thin filter. can do.

Next, a second embodiment of the present invention will be described.

FIG. 2(4) shows a plane view of an F-wave device in a second embodiment of the present invention. Figure 2 (B) is the same cross-sectional view taken from the dashed-dotted line a-j in Figure 2 (N). 21.
The transmission lines 23 and 24 connecting the 22, the first resonator 25 and the third resonator 27 are formed on the same conductive layer of the dielectric multilayer substrate 29, and input and output are made on the same layer.・Dielectric multilayer substrate 29! This is because the number has been reduced.

The operation of the above configuration will be explained below.

The high frequency signal inputted from the input/output pin 21 is transmitted to the transmission line 23 formed by the conductor layer 1 of the dielectric multilayer substrate 28.The first stage resonator 25.The second stage resonator 26.The third stage resonance - 2
7. By successively coupling with the transmission line 24 with a desired coupling amount, an F-wave device having desired band characteristics can be realized. Transmission line 2
3.24 and the resonator 25.27 are formed on the same conductor layer, but it is necessary to ensure a sufficient distance or
By providing a grounding portion connected to the ground layer of the dielectric multilayer substrate 28 by a through hole 28 as shown in Al, (Bl), unnecessary coupling can be removed.

As described above, according to this embodiment, by reducing the number of layers of the dielectric multilayer substrate, it is possible to further promote thinning of the F wave device.

Next, a third embodiment of the present invention will be described.

Figure 3 (Al indicates the plane of the F wave device in the third embodiment of the present invention. Figure 3 (B) is the same cross-sectional view seen from the dashed line a-j of Figure 3 (N). In Fig. 3, the difference from the configuration in Figs. 1 and 2 is that four stages of quarter-wavelength resonators are used, and the input/output coupling is tap coupling instead of electric field coupling. The point is that the inter-resonator coupling is not electric field coupling but a combination of electric field coupling and electromagnetic field coupling.

In FIGS. 3(4) and 3(B), 30 is a dielectric multilayer substrate.

31.32 is a transmission line for tap coupling to quarter wavelength resonators 33.34, and 35.36 is also a quarter wavelength resonator.

The operation of the above configuration will be explained below.

A high frequency signal input from the input/output pin 21 is tap-coupled to the resonator 33 via the transmission line 31. Between the resonators 33 and 35 and the resonator 34 formed on the same conductor layer
．． 36 is an electromagnetic coupling, and the coupling between the resonators 35 and 360 is an electric field coupling through a dielectric layer similar to FIGS. 1 and 2. It is possible to realize an F-wave device having desired band characteristics by successively coupling the components with a desired coupling amount.

As described above, according to this embodiment, it is possible to promote thinning of the F-wave device by using not only a 1/2 wavelength resonator but also a 1/4 wavelength resonator. Furthermore, input/output coupling can be realized not only by electric field coupling but also by tap coupling, which is a layer of magnetic field coupling, or by electromagnetic field coupling as well as coupling between resonators, that is, electric field coupling.

As described above, the filter of the present invention can be applied not only to the resonator form but also to a wide range of coupling methods.

Next, a fourth embodiment of the present invention will be described.

FIG. 4(A) shows a plane view of an F-wave device in a fourth embodiment of the present invention. FIG. 4(B) is a sectional view of FIG. 4 taken along the dashed line a-j. 4 differs from the configuration in FIG. 3 in that the first-stage resonator and fourth-stage resonator are coupled to realize an elliptic function F-wave device.

The operation of the above configuration will be explained below.

A high frequency signal input from the input/output pin 21 is tap-coupled to the resonator 33 via the transmission line 31, and is then tapped into the resonator 35.
．． 36 and 34 one after another, and is output from the tap coupling of the resonator 34 to the input/output pin 22 via the transmission line 32. This state is the same as in Fig. 3, except that the first stage resonator 33 and the fourth stage resonator 34 are coupled through the dielectric layer. An elliptic function type F-wave device having an attenuation pole in the vicinity of can be realized, and a steep attenuation characteristic can be realized even if the number of stages is not small.

In this embodiment, a four-stage elliptic function type F-wave device is shown as an example, but according to the present invention, the coupling between resonators necessary for realizing an elliptic function type F-wave device can be easily realized. , it is possible to realize a small F-wave device with a steep attenuation characteristic with a small number of stages.

Next, a fifth embodiment of the present invention will be described.

FIG. 5(4) shows a plane view of an F-wave device in a fifth embodiment of the present invention. FIG. 5(B) is a sectional view of FIG. 5(4) taken along the dashed line a-a'. The difference in FIG. 5 from FIGS. 1 to 4 is that a conductor layer is provided for adjusting the coupling amount of the resonator. Figure 5 (4), (BI
In the figure, 37 is a dielectric multilayer substrate, and 38 is a conductor layer for adjusting the coupling between the half-wavelength resonators 25 and 27 and 26. This conductor layer 38 is formed by removing a part of the conductor layer in the form of a slit in order to adjust the overlapping area of the open end portion of the resonator. Dielectric multilayer substrate 3
The ground portions of the upper and lower layers of 7 and the intermediate conductor layer 38 are connected by a through hole 28 to form a ground portion.

The operation of the above configuration will be explained below.

The high frequency signal input from the input/output pin 21 passes through the transmission line 23 formed on the conductor layer of the dielectric multilayer board 37.
It is electrically coupled to the resonator 25. The coupling between the resonators 25 and 26 and the resonators 26 and 27 is adjusted to a desired degree of coupling by the intermediate conductor layer 38. After being transmitted from the resonator 27 to the transmission line 24 by electric field coupling, it is taken out from the input/output pin 22. In the intermediate conductor layer 33, not only can the amount of coupling be adjusted by the slit portion, but also the portion other than the slit portion serves as a ground portion, making it possible to eliminate unnecessary coupling between the input/output and the resonator.

As described above, according to this embodiment, by forming a conductor layer having a slit between the layers forming the resonator, it is possible not only to adjust the amount of coupling but also to suppress unnecessary coupling.

Next, a sixth embodiment of the present invention will be explained in section L-1.

FIG. 6(4) shows a plane view of an F-wave device in a sixth embodiment of the present invention. FIG. 6(B) is a cross-sectional view of FIG. 6(A) taken along the dashed line m-tf. 6th is 2
Using a 1/1 wavelength resonator, the elliptic function form F similar to that shown in Figure 4 is obtained.
This is a realization of a wave device. 40 is a dielectric multilayer substrate, 4
1 to 44 are half wavelength resonators, and 45 is a conductor layer for adjusting the amount of coupling between the resonators.

Similarly to FIG. 5, the ground portions of the upper and lower layers of the dielectric multilayer substrate 40 and the intermediate conductor layer 45 are connected by the through hole 28 to form a ground portion.

The operation of the above configuration will be explained below.

A high frequency signal input from the input/output pin 21 passes through the transmission line 23 and is electrically coupled to the resonator 41 through the dielectric layer. The same applies to the output side. The amount of coupling between the resonators changes depending on the distance between the resonators when the resonators 41, 42 and 43, 44 are on the same conductor. On the other hand, in the case between the resonators 42, 43 and 41, 44 on different conductors, the amount of coupling changes depending on the size of the slit provided in the conductor layer 45. Input/output pin 21, transmission line 23, resonator 41
, 42, 43, 44, the transmission line 24, and the input/output pin 22, by adding the coupling of the resonators 41 and 44, an elliptic function type F-wave device similar to that shown in FIG. 4 can be realized.

As described above, according to this embodiment, 2 wavelengths similar to the 1/4 wavelength resonator
An elliptic function type F-wave device can be easily realized even by using a half-wavelength resonator.

In the above explanation, a bandpass F-wave device has been described, but it goes without saying that the present invention can also be applied to a band-elimination F-wave device.

Further, in the above explanations, the resonators are described as having a quarter wavelength and a half wavelength, but it goes without saying that the resonator is not limited to these two types.

Effects of the Invention As described above, the present invention provides a resonator or a resonator formed between the conductor layers on the conductor layer of a dielectric multilayer substrate in which a plurality of conductors and dielectrics are alternately stacked. Instead of providing another conductor layer, resonators, input/output coupling with resonators, and coupling between resonators can be easily formed, making it possible to realize small filters, especially thin F-wave filters. , its industrial utility value is great.

[Brief explanation of the drawing]

FIG. 1(C), 0 is a plan view and a sectional view of the F-wave layer in the first embodiment of the present invention, FIG.
30 is a plan view of the third embodiment of the present invention, the same figure is a sectional view, and FIG.
4(C) is a plan view of the fourth embodiment of the present invention, FIG. 4(B) is a sectional view of the same, and FIG. Plan view. 6(c) is a plan view of an embodiment of the present invention, FIG. 0 is a sectional view of the same, and FIG. 7 is a side sectional view of a conventional filter. 20.2G, 30, 31.37.40... Dielectric multilayer board, 21.22... Input/output pin, 23
゜24.31.32...Transmission line, 26,26
,27゜41.42,43.44... 1/2
Wavelength resonator, 33.34, 35.36... Quarter wavelength line, 28... Through hole. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure s / 1 @ inferior? Chi f - 4 is tri r 2nd! i! 1 (A) Part 2B β 8 Figure 3 Figure 4 Figure 36 Eight Dalet Figure 5 Figure 6 ~

Claims (2)

[Claims] (1) A filter in which at least one resonator is formed on a conductor layer of a dielectric multilayer substrate in which a plurality of conductors and dielectrics are alternately stacked. (2) The filter according to claim 1, characterized in that another conductor layer is provided between the conductor layers forming the resonator on the dielectric multilayer substrate.