JPS6211301A - Transmission circuit element - Google Patents

Abstract

PURPOSE:To miniaturize the constitution of a BPF of a transmission circuit element by laminating alternately a metallic thin film chip and an insulator thin film chip. CONSTITUTION:The metallic thin film chip 2 and the insulating thin film chip 3 forming the BPF are laminated alternately on a dielectric substrate 1 and the thin film chips 2 opposing to each other are shifted by the 1/2 operating wavelength. The occupied area is less than the case with the arrangement of the metallic thin film chips as a plane on the dielectric substrate through the lamination above and the constitution of the BPF of the transmission circuit element is miniaturized.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a transmission circuit element that can be used in microwave transmitters, receivers, measuring instruments, and the like.

2. Description of the Related Art In recent years, with the advancement of the information society, there has been active development of devices that can transmit and receive large amounts of data and handle higher frequencies. In monolithic microwave integrated circuits (MMICs) in which active and passive elements are fabricated on the same substrate, half-wavelength side coupling filters are often used to operate as filters (for example, Gen Kuraishi). Part 3: Microwave Circuit J (1983) Tokyo Denki University Press.

P2O3) A conventional transmission circuit element as described above will be described below with reference to the drawings.

FIG. 4 shows a schematic diagram of a half-wavelength side coupling filter of a conventional transmission circuit element. In FIG. 4, 11 is a dielectric substrate, and 12 is a metal thin film piece. The metal thin film pieces 12 have a wavelength equal to the wavelength of the operating frequency, and are coupled to each other by % wavelength, and act as a band pass filter using the metal thin film pieces at both ends as electrodes.

Problems to be Solved by the Invention However, the above-described configuration has the disadvantage that when used in an MMIC, it becomes much larger on a semiconductor substrate than an active poison.

In view of the above drawbacks, the present invention provides a transmission circuit element that can reduce the filter area.

Means for Solving the Problems In order to solve the above problems, the transmission circuit element of the present invention includes:
It has a structure in which metal thin film pieces and insulator thin film pieces are formed in alternating layers.

Function: With this configuration, it is possible to eliminate the spread of the metal thin film pieces in the lateral direction, and it is possible to produce a filter with a small area.

EXAMPLE An example of the present invention will be described below with reference to the drawings. FIG. 1 shows a plan view a and a cross-sectional view of a transmission circuit element according to a first embodiment of the present invention. In FIG. 1, 1 is a dielectric substrate, 2 is a metal thin film piece, and 3 is an insulator thin film piece. The length of each thin metal film piece is the length of the coefficient wavelength of the wavelength at the operating frequency, and the length of the overlap is the length of the dead wavelength.

The transmission circuit element configured as described above operates as a band pass filter having two terminals of the metal thin film pieces in the uppermost layer and the lowermost layer. As described above, according to this embodiment, by creating a multilayer structure without side-bonding the metal thin film pieces, it is possible to manufacture a filter without expanding in the lateral direction.

A second embodiment of the present invention will be described below with reference to the drawings.

FIG. 2 shows a plan view a and a cross-sectional view of a transmission circuit element according to a second embodiment of the present invention.

In the figure, 21 is a semi-insulating GaAs substrate, 22 is a vapor-deposited thin film of 6 μm thick, 60 μm wide and 2 mm long, and 23 is a 6 μm thick Si film formed by CVN.
3 is a N4 insulator thin film. The thin film pieces of Mn in the first and fourth layers, whose weights are shifted in opposite directions by 11 nm, are connected to other circuit elements on the same substrate. The transmission circuit element configured as described above operates as a band pass filter with a center frequency of 12 GHz. As described above, according to this embodiment, the metal thin films are not bonded sideways in the lateral direction as usual, but are made very close to each other in the vertical direction, thereby creating a filter with low loss and a small area. realizable.

FIG. 3 shows a schematic diagram of the arrangement of metal thin films of a transmission circuit element in a third embodiment of the present invention. In the figure, 31 is a metal thin film. This metal thin film is formed through an insulating thin film.The zero operation is the same as in the second embodiment. According to this embodiment, by bending the metal thin film, it can be accommodated in a smaller area.

In the first embodiment, the number of metal thin film pieces is four, but any number may be used. Further, the dielectric substrate and the insulating thin film piece may be of any type as long as they are not electrically conductive. Although the substrate in the second embodiment was made of semi-insulating GaAs, it may be made of Si or other compound semiconductors. The deposited thin film may be plated or 5iS
It goes without saying that N4 may be 5102.

Effects of the Invention As described above, by forming metal thin film pieces and insulating thin film pieces in a layered manner, the area occupied by these thin film pieces can be reduced and loss can be reduced, and its practical effects are great. There is something.

1 is a schematic diagram of the arrangement of metal thin films of a transmission circuit element according to a third embodiment of the present invention, and FIG. 4 is a plan view of a conventional transmission circuit element.

1... Dielectric substrate, 2... Metal thin film piece, 3... Insulator thin film piece.

Claims (2)

[Claims] (1) Three or more layers and two or more layers of metal thin film pieces with a length of 1/2 of the wavelength to be transmitted and insulating thin film pieces are alternately formed on a dielectric substrate, and A transmission circuit element characterized in that the metal thin film pieces facing each other are shifted from each other by a half length. (2) On a semi-insulating GaAs dielectric substrate, four layers of rectangular metal thin film pieces whose long sides are half the length of the transmitted wavelength and three layers of insulating thin film pieces are arranged alternately. a third layer of thin metal film pieces is above the first layer and a second layer of thin metal film strips is formed.
The transmission circuit element according to claim 1, wherein the layer and the fourth layer are shifted by 1/2 in the long side direction of the rectangle with respect to the first layer and the third layer. .